All Products
Accelerometer
ADC
Amplifier
Antenna
Audio IC
Battery Management
Buzzer
CAN Transceiver
Ceramic Capacitor
Circuit Protection
Color Sensor
Connector
Converter
Current Sensor
DAC
Data Storage
Digital Potentiometer
Diode
DRAM
DSP
Earthquake Sensor
Electrolytic Capacitor
Ethernet Controller
Ethernet Module
Film Capacitor
FLASH
Flyback Controller
FPGA
Gas Sensor
Gate Driver
Hall Effect Sensor
Isolated Amplifier
LCD Display
LCD Driver
LED
LED Driver
Line Filter
Logic IC
Memory
Metering IC
Microcontroller
Motor Driver
OLED Display
OpAmp
Optical Sensor
Optocoupler
Oscillator
PHY
PLC IC
Port Expander
Power Switch
Pressure Sensor
Relay
Reset IC
RF & Wifi Module
RF Transceiver MCU
RFID
RS232 Transceiver
RS485 Transceiver
RTC Real Time Clock
SDRAM
SMPS Controller
Solid State Relay
Special IC
Tantalum Capacitor
Temperature Sensor
TH Sensor
Timer
Touch IC
Transformer
Transistor
Triac
TVS
USB UART
Varistor
Voltage Reference
Voltage Regulator
Wirewounded Inductor

BZX55B2V7 / The BZX55B2V7 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55B2V7

Description: The BZX55B2V7 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55B2V4 / The BZX55B2V4 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55B2V4

Description: The BZX55B2V4 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C75 / The BZX55C75 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C75

Description: The BZX55C75 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C68 / The BZX55C68 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C68

Description: The BZX55C68 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C62 / The BZX55C62 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C62

Description: The BZX55C62 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C56 / The BZX55C56 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C56

Description: The BZX55C56 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C51 / The BZX55C51 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C51

Description: The BZX55C51 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C47 / The BZX55C47 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C47

Description: The BZX55C47 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C43 / The BZX55C43 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C43

Description: The BZX55C43 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C39 / The BZX55C39 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C39

Description: The BZX55C39 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C36 / The BZX55C36 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C36

Description: The BZX55C36 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C33 / The BZX55C33 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C33

Description: The BZX55C33 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C30 / The BZX55C30 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C30

Description: The BZX55C30 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C27 / The BZX55C27 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C27

Description: The BZX55C27 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C24 / The BZX55C24 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C24

Description: The BZX55C24 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C22 / The BZX55C22 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C22

Description: The BZX55C22 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C20 / The BZX55C20 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C20

Description: The BZX55C20 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C18 / The BZX55C18 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C18

Description: The BZX55C18 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C16 / The BZX55C16 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C16

Description: The BZX55C16 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C15 / The BZX55C15 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C15

Description: The BZX55C15 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C13 / The BZX55C13 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C13

Description: The BZX55C13 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C12 / The BZX55C12 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C12

Description: The BZX55C12 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C11 / The BZX55C11 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C11

Description: The BZX55C11 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C10 / The BZX55C10 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C10

Description: The BZX55C10 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C9V1 / The BZX55C9V1 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C9V1

Description: The BZX55C9V1 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C8V2 / The BZX55C8V2 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C8V2

Description: The BZX55C8V2 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C7V5 / The BZX55C7V5 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C7V5

Description: The BZX55C7V5 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C6V8 / The BZX55C6V8 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C6V8

Description: The BZX55C6V8 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C6V2 / The BZX55C6V2 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C6V2

Description: The BZX55C6V2 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C5V6 / The BZX55C5V6 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C5V6

Description: The BZX55C5V6 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C4V7 / The BZX55C4V7 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C4V7

Description: The BZX55C4V7 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C4V3 / The BZX55C4V3 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C4V3

Description: The BZX55C4V3 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C3V9 / The BZX55C3V9 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C3V9

Description: The BZX55C3V9 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C3V6 / The BZX55C3V6 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C3V6

Description: The BZX55C3V6 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C3V3 / The BZX55C3V3 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C3V3

Description: The BZX55C3V3 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C3V0 / The BZX55C3V0 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C3V0

Description: The BZX55C3V0 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C2V7 / The BZX55C2V7 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C2V7

Description: The BZX55C2V7 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C2V4 / The BZX55C2V4 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C2V4

Description: The BZX55C2V4 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

ESP32-S3-MINI-1U-N8 / The ESP32-S3-MINI-1U is a compact and high-performance <strong>Wi-Fi and Bluetooth LE microcontroller module</strong> developed by <strong>Espressif Systems</strong>, designed for space-constrained IoT and embedded applications requiring enhanced RF performance. It is powered by a <strong>dual-core Xtensa LX7 processor</strong>, delivering strong processing capability for real-time data processing and control tasks. <br><br>The module supports <strong>2.4 GHz Wi-Fi (802.11 b/g/n) and Bluetooth 5 (LE)</strong>, ensuring reliable wireless connectivity across a wide range of applications. This variant features a <strong>U.FL connector for external antenna support</strong>, allowing improved signal strength and extended communication range in challenging environments. <br><br>The ESP32-S3-MINI-1U includes advanced features such as <strong>vector instructions for AI acceleration</strong>, enabling efficient edge computing and machine learning tasks. It also supports <strong>USB OTG interface</strong>, providing direct USB connectivity without additional hardware. <br><br>The module offers a wide range of interfaces including <strong>SPI, I2C, UART, I2S, PWM, ADC, and GPIO</strong>, ensuring flexible integration with various peripherals and system designs. <br><br>With support for <strong>low-power operation modes</strong> and advanced security features like <strong>secure boot and flash encryption</strong>, the ESP32-S3-MINI-1U is suitable for secure and energy-efficient applications. <br><br>Packaged in a compact <strong>SMD module with external antenna interface</strong>, it is ideal for high-density PCB layouts and designs requiring flexible antenna placement. <br><br>The <strong>ESP32-S3-MINI-1U</strong> is widely used in applications such as <strong>IoT devices, smart home systems, industrial automation, wearable electronics, wireless sensors, and AI edge devices</strong>, where compact size and extended wireless range are critical.
ESP32-S3-MINI-1U-N8

Description: The ESP32-S3-MINI-1U is a compact and high-performance Wi-Fi and Bluetooth LE micr ...
Package: TRAY | MOQ: 650 | MPQ: 650

ESP32-S3-MINI-1 / The ESP32-S3-MINI-1 is a compact and high-performance <strong>Wi-Fi and Bluetooth LE microcontroller module</strong> developed by <strong>Espressif Systems</strong>, designed for space-constrained IoT and embedded applications. It is powered by a <strong>dual-core Xtensa LX7 processor</strong>, delivering enhanced processing capabilities for real-time data processing and control tasks. <br><br>The module integrates <strong>2.4 GHz Wi-Fi (802.11 b/g/n) and Bluetooth 5 (LE)</strong>, providing reliable wireless connectivity for a wide range of smart devices and connected systems. <br><br>Its compact form factor makes it ideal for designs where PCB space is limited, without compromising on performance or functionality. <br><br>The ESP32-S3-MINI-1 supports a wide range of interfaces including <strong>SPI, I2C, UART, I2S, PWM, ADC, and GPIO</strong>, enabling flexible integration with sensors, displays, and other peripherals. <br><br>Advanced features such as <strong>vector instructions for AI acceleration</strong>, <strong>USB OTG support</strong>, and <strong>low-power operation modes</strong> enhance its suitability for modern embedded and AIoT applications. <br><br>Security features including <strong>secure boot and flash encryption</strong> provide strong protection for connected devices. <br><br>Packaged in a compact <strong>SMD module with castellated edges</strong>, the ESP32-S3-MINI-1 simplifies integration and accelerates product development. <br><br>The <strong>ESP32-S3-MINI-1</strong> is widely used in applications such as <strong>IoT devices, wearable electronics, smart home systems, wireless sensors, AI edge devices, and industrial automation</strong>, where compact size and high performance are critical.
ESP32-S3-MINI-1

Description: The ESP32-S3-MINI-1 is a compact and high-performance Wi-Fi and Bluetooth LE micro ...
Package: TRAY | MOQ: 650 | MPQ: 650

ESP32-S3-WROOM-2 / The ESP32-S3-WROOM-2 is an advanced <strong>Wi-Fi and Bluetooth LE microcontroller module</strong> developed by <strong>Espressif Systems</strong>, designed for high-performance IoT, AI, and embedded applications requiring additional memory resources. It is powered by a <strong>dual-core Xtensa LX7 processor</strong>, providing enhanced computational performance for real-time processing and complex workloads. <br><br>The module integrates <strong>2.4 GHz Wi-Fi (802.11 b/g/n) and Bluetooth 5 (LE)</strong>, enabling reliable wireless connectivity for a wide range of smart devices and connected systems. <br><br>One of the key advantages of the ESP32-S3-WROOM-2 is its support for <strong>external PSRAM</strong>, which significantly increases available memory for data buffering, image processing, and AI applications. <br><br>The module includes a wide range of peripheral interfaces such as <strong>SPI, I2C, UART, I2S, PWM, ADC, and GPIO</strong>, ensuring flexible integration with various hardware components and system architectures. <br><br>It also features <strong>USB OTG support</strong>, enabling direct USB communication for advanced connectivity solutions. <br><br>Advanced security features including <strong>secure boot, flash encryption, and hardware cryptographic acceleration</strong> provide strong protection for IoT and connected devices. <br><br>Packaged in a compact <strong>SMD module with castellated edges</strong>, the ESP32-S3-WROOM-2 simplifies PCB design and accelerates product development. <br><br>The <strong>ESP32-S3-WROOM-2</strong> is widely used in applications such as <strong>AI edge devices, smart home systems, industrial automation, multimedia applications, IoT devices, and wireless communication systems</strong>, where high performance and extended memory capabilities are required.
ESP32-S3-WROOM-2

Description: The ESP32-S3-WROOM-2 is an advanced Wi-Fi and Bluetooth LE microcontroller module ...
Package: T&R | MOQ: 650 | MPQ: 650

ESP32-S3-WROOM-1U / The ESP32-S3-WROOM-1U is a high-performance <strong>Wi-Fi and Bluetooth LE microcontroller module</strong> developed by <strong>Espressif Systems</strong>, designed for advanced IoT and embedded applications requiring enhanced RF flexibility. It is powered by a <strong>dual-core Xtensa LX7 processor</strong>, delivering strong processing capability for real-time data processing and control. <br><br>The module supports <strong>2.4 GHz Wi-Fi (802.11 b/g/n) and Bluetooth 5 (LE)</strong>, enabling reliable wireless communication across a wide range of applications. Unlike standard variants, this version includes a <strong>U.FL connector for external antenna support</strong>, allowing improved signal strength and extended communication range in challenging environments. <br><br>The ESP32-S3-WROOM-1U includes advanced features such as <strong>vector instructions for AI acceleration</strong>, enabling efficient edge computing and machine learning tasks directly on the device. It also supports <strong>USB OTG interface</strong>, providing direct USB connectivity without additional components. <br><br>The module offers a comprehensive set of interfaces including <strong>SPI, I2C, UART, I2S, PWM, ADC, and GPIO</strong>, ensuring flexible integration with various peripherals and system architectures. <br><br>With support for <strong>low-power operation modes</strong> and advanced security features like <strong>secure boot and flash encryption</strong>, the ESP32-S3-WROOM-1U is suitable for secure and energy-efficient designs. <br><br>Packaged in a compact <strong>SMD module with external antenna interface</strong>, it is ideal for applications requiring optimized RF performance and flexible antenna placement. <br><br>The <strong>ESP32-S3-WROOM-1U</strong> is widely used in applications such as <strong>IoT devices, industrial automation, smart home systems, wireless sensors, AI edge devices, and communication systems</strong>, where high performance and extended wireless range are essential.
ESP32-S3-WROOM-1U

Description: The ESP32-S3-WROOM-1U is a high-performance Wi-Fi and Bluetooth LE microcontroller ...
Package: TRAY | MOQ: 650 | MPQ: 650

ESP32-E22-M2-1-KE / The ESP32-E22-M2-1 is a compact and high-performance <strong>Wi-Fi and Bluetooth LE microcontroller module</strong> developed by <strong>Espressif Systems</strong>, designed for modern IoT and embedded applications requiring reliable wireless connectivity. It is powered by a <strong>dual-core Xtensa LX7 processor</strong>, delivering enhanced processing capabilities for real-time control and data handling. <br><br>The module supports <strong>2.4 GHz Wi-Fi (802.11 b/g/n) and Bluetooth Low Energy (BLE)</strong>, enabling stable and efficient communication for connected devices across various environments. <br><br>The ESP32-E22-M2-1 is optimized for <strong>low-power operation</strong>, making it suitable for battery-powered and energy-efficient applications such as wireless sensors and portable electronics. <br><br>It provides a wide range of peripheral interfaces including <strong>SPI, I2C, UART, PWM, ADC, and GPIO</strong>, ensuring flexible integration with sensors, actuators, and other external components. <br><br>Advanced features such as <strong>secure boot, flash encryption, and hardware cryptographic acceleration</strong> enhance system security and protect sensitive data in IoT deployments. <br><br>Packaged in a compact <strong>SMD module with castellated edges</strong>, the ESP32-E22-M2-1 allows easy PCB mounting and rapid product development in space-constrained designs. <br><br>The <strong>ESP32-E22-M2-1</strong> is widely used in applications such as <strong>IoT devices, smart home systems, industrial automation, wearable electronics, and wireless communication systems</strong>, where performance, security, and connectivity are essential.
ESP32-E22-M2-1-KE

Description: The ESP32-E22-M2-1 is a compact and high-performance Wi-Fi and Bluetooth LE microc ...
Package: TRAY | MOQ: 650 | MPQ: 650

TDA21590AUMA1 / The TDA21590AUMA1 is a highly integrated <strong>smart power stage (DrMOS)</strong> developed by <strong>Infineon Technologies</strong>, designed for high-performance voltage regulation in computing and industrial applications. It combines <strong>high-side and low-side MOSFETs with an optimized gate driver</strong> in a single compact package, simplifying design and improving efficiency. <br><br>This device supports up to <strong>90A continuous current</strong>, making it ideal for demanding applications such as CPU and GPU voltage regulator modules (VRMs), servers, and high-performance computing systems. <br><br>The TDA21590AUMA1 is optimized for <strong>synchronous buck converter topologies</strong>, delivering high efficiency and fast transient response required in modern power delivery networks. <br><br>It features advanced technologies such as <strong>integrated current sensing, temperature monitoring, and fault protection</strong>, ensuring safe and reliable operation under varying load conditions. <br><br>With its <strong>low switching losses and optimized dead-time control</strong>, the device enhances overall system efficiency while reducing heat generation. <br><br>Packaged in a compact <strong>PG-VQFN-40 surface-mount package</strong>, the TDA21590AUMA1 is ideal for high-density PCB layouts and space-constrained designs. <br><br>The <strong>TDA21590AUMA1</strong> is widely used in applications such as <strong>CPU and GPU power delivery, servers, telecom equipment, high-performance computing systems, and advanced industrial power solutions</strong>, where high current capability and efficiency are critical.
TDA21590AUMA1

Description: The TDA21590AUMA1 is a highly integrated smart power stage (DrMOS) develo ...
Package: T&R | MOQ: 2000 | MPQ: 2000

NT5CC64M16DP-DI / The NT5CC64M16DP-DI is a high-performance <strong>1Gbit DDR3 SDRAM</strong> developed by <strong>Nanya Technology</strong>, designed for embedded systems, communication equipment, and high-speed digital applications. It features a memory organization of <strong>64M × 16 bits</strong>, enabling efficient data handling and reliable bandwidth performance. <br><br>This device utilizes a <strong>DDR3 architecture</strong>, allowing data transfers on both rising and falling edges of the clock signal, significantly increasing throughput compared to conventional SDRAM technologies. <br><br>The NT5CC64M16DP-DI supports high-speed operation typically up to <strong>1600 Mbps</strong>, making it suitable for applications requiring fast and stable memory access. <br><br>Operating at a nominal supply voltage of <strong>1.5V</strong>, the device offers a balance between power efficiency and performance, and is compatible with <strong>SSTL_15 signaling</strong> for reliable communication with modern memory controllers. <br><br>Advanced features such as <strong>on-die termination (ODT), auto-refresh, and self-refresh</strong> help maintain signal integrity and ensure stable operation in dynamic environments. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC64M16DP-DI is optimized for high-density PCB layouts and space-constrained designs. <br><br>The <strong>NT5CC64M16DP-DI</strong> is widely used in applications such as <strong>embedded systems, networking devices, industrial controllers, and consumer electronics</strong>, where reliable and cost-effective high-speed volatile memory is required.
NT5CC64M16DP-DI

Description: The NT5CC64M16DP-DI is a high-performance 1Gbit DDR3 SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC512M16JR-DI / The NT5CC512M16JR-DI is a high-performance <strong>8Gbit DDR3L SDRAM</strong> developed by <strong>Nanya Technology</strong>, engineered for low-power, high-speed memory applications in embedded and industrial systems. It features a memory organization of <strong>512M × 16 bits</strong>, delivering high bandwidth and efficient data throughput. <br><br>This device utilizes a <strong>DDR3L architecture</strong>, enabling data transfers on both rising and falling edges of the clock signal, significantly increasing performance compared to traditional SDRAM technologies. <br><br>The NT5CC512M16JR-DI operates at a nominal voltage of <strong>1.35V</strong>, reducing power consumption and thermal output while maintaining compatibility with <strong>1.5V operation</strong> in flexible system designs. <br><br>It supports high-speed operation up to approximately <strong>1600 Mbps</strong>, making it suitable for applications requiring fast and reliable memory access and low latency. <br><br>Advanced features such as <strong>on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture</strong> ensure improved signal integrity and stable operation in high-speed environments. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC512M16JR-DI is optimized for high-density PCB layouts and space-constrained designs. <br><br>The <strong>NT5CC512M16JR-DI</strong> is widely used in applications such as <strong>embedded systems, networking devices, industrial controllers, portable electronics, and consumer products</strong>, where low power consumption and high-capacity volatile memory are critical.
NT5CC512M16JR-DI

Description: The NT5CC512M16JR-DI is a high-performance 8Gbit DDR3L SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC512M16ER-DI / The NT5CC512M16ER-DI is a high-density <strong>8Gbit DDR3L SDRAM</strong> developed by <strong>Nanya Technology</strong>, designed for low-power, high-performance memory applications in embedded systems and advanced digital platforms. It features a memory organization of <strong>512M × 16 bits</strong>, enabling efficient data throughput and high bandwidth performance. <br><br>This device utilizes a <strong>DDR3L architecture</strong>, allowing data transfers on both rising and falling edges of the clock signal, significantly increasing performance compared to conventional SDRAM technologies. <br><br>The NT5CC512M16ER-DI operates at a reduced supply voltage of approximately <strong>1.35V</strong>, minimizing power consumption and heat generation while also supporting <strong>1.5V compatibility</strong> for flexible system integration. <br><br>It supports high-speed operation up to approximately <strong>1600 Mbps</strong>, making it suitable for performance-critical applications requiring fast and reliable memory access. <br><br>Advanced features such as <strong>on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture</strong> enhance signal integrity and ensure stable operation in high-speed environments. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC512M16ER-DI is optimized for high-density PCB layouts and modern electronic designs. <br><br>The <strong>NT5CC512M16ER-DI</strong> is widely used in applications such as <strong>embedded computing, networking equipment, industrial automation, portable devices, and consumer electronics</strong>, where low power consumption and high-capacity volatile memory are essential.
NT5CC512M16ER-DI

Description: The NT5CC512M16ER-DI is a high-density 8Gbit DDR3L SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC512M16DP-DI / The NT5CC512M16DP-DI is a high-density <strong>8Gbit DDR3 SDRAM</strong> developed by <strong>Nanya Technology</strong>, engineered for high-performance computing, embedded systems, and data-intensive applications. It features a memory organization of <strong>512M × 16 bits</strong>, delivering high bandwidth and efficient data throughput for demanding applications. <br><br>This device utilizes a <strong>DDR3 architecture</strong>, enabling data transfers on both rising and falling edges of the clock signal, significantly increasing performance compared to conventional SDRAM technologies. <br><br>The NT5CC512M16DP-DI supports high-speed operation typically up to <strong>1600 Mbps</strong>, making it suitable for applications requiring fast and reliable memory access with low latency. <br><br>Operating at a nominal supply voltage of <strong>1.5V</strong>, the device provides a balance between power efficiency and performance, and is compatible with <strong>SSTL_15 signaling</strong> for stable communication with modern memory controllers. <br><br>Advanced features such as <strong>on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture</strong> enhance signal integrity and ensure reliable operation in high-speed systems. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC512M16DP-DI is ideal for high-density PCB layouts and space-constrained designs. <br><br>The <strong>NT5CC512M16DP-DI</strong> is widely used in applications such as <strong>embedded computing, networking equipment, industrial automation, consumer electronics, and high-performance digital systems</strong>, where high-capacity and reliable volatile memory is essential.
NT5CC512M16DP-DI

Description: The NT5CC512M16DP-DI is a high-density 8Gbit DDR3 SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC256M16JR-DI / The NT5CC256M16JR-DI is a high-performance <strong>4Gbit DDR3L SDRAM</strong> developed by <strong>Nanya Technology</strong>, designed for low-power, high-speed memory applications in embedded and industrial systems. It features a memory organization of <strong>256M × 16 bits</strong>, enabling efficient data throughput and high bandwidth performance. <br><br>This device utilizes a <strong>DDR3L architecture</strong>, supporting data transfers on both rising and falling edges of the clock signal, significantly increasing performance compared to conventional SDRAM solutions. <br><br>The NT5CC256M16JR-DI operates at a nominal voltage of <strong>1.35V</strong>, reducing power consumption and thermal output while maintaining compatibility with <strong>1.5V operation</strong> in flexible system designs. <br><br>It supports high-speed operation up to approximately <strong>1600 Mbps</strong>, making it suitable for applications requiring fast and reliable memory access and low latency. <br><br>Advanced features include <strong>on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture</strong>, ensuring improved signal integrity and stable operation in high-speed environments. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC256M16JR-DI is optimized for high-density PCB layouts and space-constrained designs. <br><br>The <strong>NT5CC256M16JR-DI</strong> is widely used in applications such as <strong>embedded systems, networking equipment, industrial controllers, portable electronics, and consumer devices</strong>, where low power consumption and high-capacity volatile memory are critical.
NT5CC256M16JR-DI

Description: The NT5CC256M16JR-DI is a high-performance 4Gbit DDR3L SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC256M16ER-DI / The NT5CC256M16ER-DI is a high-density <strong>4Gbit DDR3L SDRAM</strong> developed by <strong>Nanya Technology</strong>, engineered for low-power, high-speed memory applications in embedded systems and advanced digital platforms. It features a memory organization of <strong>256M × 16 bits</strong>, enabling efficient data processing and high bandwidth performance. <br><br>This device utilizes a <strong>DDR3L architecture</strong>, allowing data transfers on both rising and falling edges of the clock signal, significantly increasing throughput compared to conventional SDRAM technologies. <br><br>The NT5CC256M16ER-DI operates at a reduced supply voltage of approximately <strong>1.35V</strong>, minimizing power consumption and heat generation while also supporting <strong>1.5V compatibility</strong> for flexible system integration. <br><br>It supports high-speed operation up to approximately <strong>1600 Mbps</strong>, making it suitable for performance-critical applications requiring fast and reliable memory access. <br><br>Advanced features include <strong>on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture</strong>, ensuring improved signal integrity and stable operation in high-speed environments. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC256M16ER-DI is optimized for high-density PCB layouts and modern electronic designs. <br><br>The <strong>NT5CC256M16ER-DI</strong> is widely used in applications such as <strong>embedded computing, networking equipment, industrial automation, portable devices, and consumer electronics</strong>, where low power consumption and high-capacity volatile memory are essential.
NT5CC256M16ER-DI

Description: The NT5CC256M16ER-DI is a high-density 4Gbit DDR3L SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC256M16DP-DI / The NT5CC256M16DP-DI is a high-density <strong>4Gbit DDR3 SDRAM</strong> developed by <strong>Nanya Technology</strong>, designed for high-performance computing, embedded systems, and data-intensive applications. It features a memory organization of <strong>256M × 16 bits</strong>, delivering high bandwidth and efficient data throughput. <br><br>This device utilizes <strong>DDR3 architecture</strong>, enabling data transfers on both rising and falling edges of the clock signal to significantly increase performance compared to traditional SDRAM technologies. <br><br>The NT5CC256M16DP-DI supports high-speed operation typically up to <strong>1600 Mbps</strong>, making it suitable for applications requiring fast and reliable memory access and low latency performance. <br><br>Operating at a nominal supply voltage of <strong>1.5V</strong>, the device provides a balance between performance and power efficiency, and is compatible with <strong>SSTL_15 signaling</strong> for stable communication with modern memory controllers. <br><br>Advanced features such as <strong>on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture</strong> enhance signal integrity and ensure reliable operation in high-speed systems. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC256M16DP-DI is ideal for high-density PCB layouts and space-constrained electronic designs. <br><br>The <strong>NT5CC256M16DP-DI</strong> is widely used in applications such as <strong>embedded computing, networking equipment, industrial automation, consumer electronics, and high-performance digital systems</strong>, where high-capacity and reliable volatile memory is required.
NT5CC256M16DP-DI

Description: The NT5CC256M16DP-DI is a high-density 4Gbit DDR3 SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000













info@signalhk.com

+852 2417 2366

Room 1304, 13/F, Allways Centre, 468 Jaffe Road, Causeway Bay, Hong Kong.


SIGNAL-HK WIKI BLOG

Copyright © 2008-2024 Signal HK Limited. All Rights Reserved.Designated trademarks and brands are the property of their respective owners.
Use of this Website constitutes acceptance of Signal HK Limited Terms of Use and Privacy Policy

Cookie Policy | MSN EQV Parts |