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MT48LC4M32B2P-75:G / The <strong>MT48LC4M32B2P-75:G</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, consumer electronics, and general-purpose applications requiring stable and cost-effective volatile memory.<br><br>The device is organized as <strong>4M x 32 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring predictable timing and reliable data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC4M32B2P-75:G supports clock frequencies up to approximately <strong>133 MHz</strong>, making it suitable for stable and efficient memory performance in a wide range of applications.<br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronic systems and non-harsh environments.<br><br>Packaged in a compact <strong>86-pin TSOP-II surface-mount form factor</strong>, the MT48LC4M32B2P-75:G is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC4M32B2P-75:G</strong> is widely used in <strong>embedded systems, industrial controllers, communication devices, consumer electronics, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC4M32B2P-75:G

Description: The MT48LC4M32B2P-75:G is a high-performance 128Mbit synchronous ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC4M32B2P-6A-IT-L / The <strong>MT48LC4M32B2P-6A-IT-L</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications requiring reliable and efficient volatile memory solutions.<br><br>The device is organized as <strong>4M x 32 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring predictable timing and stable data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC4M32B2P-6A-IT-L supports clock frequencies up to approximately <strong>167 MHz</strong> with an access time of around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions. <br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in harsh environments and long-life applications. <br><br>Packaged in a compact <strong>86-pin TSOP-II surface-mount form factor</strong>, the MT48LC4M32B2P-6A-IT-L is optimized for space-constrained PCB designs while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC4M32B2P-6A-IT-L</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and high-speed SDRAM memory is required.
MT48LC4M32B2P-6A-IT-L

Description: The MT48LC4M32B2P-6A-IT-L is a high-performance 128Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC4M32B2P-6A-G / The <strong>MT48LC4M32B2P-6A-G</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, communication equipment, and general-purpose applications requiring reliable and cost-effective volatile memory solutions.<br><br>The device is organized as <strong>4M x 32 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring predictable timing and stable performance. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC4M32B2P-6A-G supports clock frequencies up to approximately <strong>167 MHz</strong> with an access time around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronic systems and non-harsh environments. <br><br>Packaged in a compact <strong>86-pin TSOP-II surface-mount form factor</strong>, the MT48LC4M32B2P-6A-G is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC4M32B2P-6A-G</strong> is widely used in <strong>embedded systems, industrial controllers, communication devices, consumer electronics, and legacy computing platforms</strong> where stable and high-speed SDRAM memory is required.
MT48LC4M32B2P-6A-G

Description: The MT48LC4M32B2P-6A-G is a high-performance 128Mbit synchronous ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC4M32B2P-6A IT:L / The <strong>MT48LC4M32B2P-6A IT:L</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications requiring reliable and efficient volatile memory.<br><br>The device is organized as <strong>4M x 32 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized with the system clock, ensuring predictable timing and stable data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC4M32B2P-6A IT:L supports clock frequencies up to approximately <strong>167 MHz</strong>, making it suitable for high-speed memory applications.<br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in harsh environments and long-life applications.<br><br>Packaged in a compact <strong>86-pin TSOP-II surface-mount form factor</strong>, the MT48LC4M32B2P-6A IT:L is optimized for space-constrained PCB designs while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC4M32B2P-6A IT:L</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and high-speed SDRAM memory is required.
MT48LC4M32B2P-6A IT:L

Description: The MT48LC4M32B2P-6A IT:L is a high-performance 128Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC4M32B2B5-7 IT:G / The <strong>MT48LC4M32B2B5-7 IT:G</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication equipment requiring reliable and efficient volatile memory.<br><br>The device is organized as <strong>4M x 32 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized with the system clock for predictable timing and stable data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC4M32B2B5-7 IT:G supports clock frequencies up to approximately <strong>143 MHz</strong> with an access time of around <strong>5.5 ns</strong>, making it suitable for high-speed and cost-effective memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and power-down modes</strong>, ensuring efficient memory management and data integrity under various operating conditions.<br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in harsh environments and long-life applications. <br><br>Packaged in a compact <strong>90-ball VFBGA surface-mount form factor</strong>, the MT48LC4M32B2B5-7 IT:G is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal reliability.<br><br>The <strong>MT48LC4M32B2B5-7 IT:G</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, automotive electronics, and communication devices</strong> where stable and high-speed SDRAM memory is required.
MT48LC4M32B2B5-7 IT:G

Description: The MT48LC4M32B2B5-7 IT:G is a high-performance 128Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC4M32B2B5-6A-XIT-L / The <strong>MT48LC4M32B2B5-6A-XIT-L</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial applications, and communication equipment requiring reliable volatile memory and efficient data throughput.<br><br>The device is organized as <strong>4M x 32 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system performance. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal for predictable timing and stable operation. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the device supports clock frequencies up to approximately <strong>167 MHz</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM supports advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and burst terminate</strong>, ensuring efficient memory management and data integrity across various operating conditions. <br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in harsh environments and long-life applications. <br><br>Packaged in a compact <strong>90-ball VFBGA surface-mount form factor</strong>, the MT48LC4M32B2B5-6A-XIT-L is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal performance.<br><br>The <strong>MT48LC4M32B2B5-6A-XIT-L</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, automotive electronics, and communication devices</strong> where stable and cost-effective SDRAM memory is required.
MT48LC4M32B2B5-6A-XIT-L

Description: The MT48LC4M32B2B5-6A-XIT-L is a high-performance 128Mbit synchro ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC32M8A2P-75:G TR / The <strong>MT48LC32M8A2P-75:G TR</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, communication equipment, and general-purpose applications requiring stable and cost-effective volatile memory solutions.<br><br>The device is organized as <strong>32M x 8 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring predictable timing and reliable data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC32M8A2P-75:G TR supports clock frequencies up to approximately <strong>133 MHz</strong>, providing stable performance for a wide range of digital applications. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is supplied in <strong>tape and reel (TR) packaging</strong>, making it suitable for automated SMT assembly processes in high-volume production environments. Additionally, it is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC32M8A2P-75:G TR is optimized for space-constrained PCB designs while maintaining reliable electrical and thermal performance.<br><br>The <strong>MT48LC32M8A2P-75:G TR</strong> is widely used in <strong>embedded systems, industrial controllers, communication devices, consumer electronics, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC32M8A2P-75:G TR

Description: The MT48LC32M8A2P-75:G TR is a high-performance 256Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC32M8A2P-75:G IT / The <strong>MT48LC32M8A2P-75:G IT</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for industrial, embedded, and communication systems requiring reliable and stable volatile memory performance.<br><br>The device is organized as <strong>32M x 8 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory access and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized with the system clock to ensure predictable timing and efficient operation. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC32M8A2P-75:G IT supports clock frequencies up to approximately <strong>133 MHz</strong> with access times around <strong>5.4 ns</strong>, making it suitable for stable and cost-effective memory applications. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity under various operating conditions. <br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in harsh environments and long-life applications. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC32M8A2P-75:G IT is optimized for space-constrained PCB designs while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC32M8A2P-75:G IT</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC32M8A2P-75:G IT

Description: The MT48LC32M8A2P-75:G IT is a high-performance 256Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC32M8A2P-75:G / The <strong>MT48LC32M8A2P-75:G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, communication equipment, and general-purpose applications requiring stable and cost-effective volatile memory.<br><br>The device is organized as <strong>32M x 8 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring predictable timing and reliable data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC32M8A2P-75:G supports clock frequencies up to approximately <strong>133 MHz</strong> with an access time of around <strong>5.4 ns</strong>, making it suitable for stable and efficient memory performance. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronic systems and non-harsh environments. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC32M8A2P-75:G is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC32M8A2P-75:G</strong> is widely used in <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC32M8A2P-75:G

Description: The MT48LC32M8A2P-75:G is a high-performance 256Mbit synchronous ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC32M8A2P-75 IT:G / The <strong>MT48LC32M8A2P-75 IT:G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications requiring stable and reliable volatile memory performance.<br><br>The device is organized as <strong>32M x 8 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized with the system clock for predictable timing and efficient data handling.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC32M8A2P-75 IT:G supports clock frequencies up to approximately <strong>133 MHz</strong> with an access time of around <strong>5.4 ns</strong>, making it suitable for stable and cost-effective memory applications. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in demanding environments and long-life applications.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC32M8A2P-75 IT:G is optimized for space-constrained PCB designs while maintaining reliable electrical and thermal performance.<br><br>The <strong>MT48LC32M8A2P-75 IT:G</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC32M8A2P-75 IT:G

Description: The MT48LC32M8A2P-75 IT:G is a high-performance 256Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2TG-75:D / The <strong>MT48LC16M16A2TG-75:D</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications requiring reliable and efficient volatile memory.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent operations and improved memory throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized with the system clock, ensuring predictable timing and stable performance.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2TG-75:D supports clock frequencies up to approximately <strong>133 MHz</strong> with an access time of around <strong>5.4 ns</strong>, making it suitable for cost-effective and stable memory solutions. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant typically supports <strong>industrial-grade temperature operation (-40°C to +85°C)</strong>, providing reliable performance in demanding environments and long-life applications. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2TG-75:D is optimized for space-constrained PCB designs while maintaining strong electrical and thermal reliability.<br><br>The <strong>MT48LC16M16A2TG-75:D</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC16M16A2TG-75:D

Description: The MT48LC16M16A2TG-75:D is a high-performance 256Mbit synchronou ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2TG-75 IT:D / The <strong>MT48LC16M16A2TG-75 IT:D</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications requiring reliable and stable volatile memory performance.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized with the system clock, ensuring predictable timing and efficient data transfer. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2TG-75 IT:D supports clock frequencies up to approximately <strong>133 MHz</strong> with an access time around <strong>5.4 ns</strong>, making it suitable for stable and efficient memory performance. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, ensuring reliable performance in harsh environments and long-life applications. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2TG-75 IT:D is optimized for space-constrained PCB designs while maintaining reliable electrical and thermal performance.<br><br>The <strong>MT48LC16M16A2TG-75 IT:D</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC16M16A2TG-75 IT:D

Description: The MT48LC16M16A2TG-75 IT:D is a high-performance 256Mbit synchro ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-7E-IT-G / The <strong>MT48LC16M16A2P-7E-IT-G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication equipment requiring stable and reliable volatile memory performance.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring predictable timing and efficient data handling.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-7E-IT-G supports clock frequencies up to approximately <strong>133 MHz</strong> with access times around <strong>5.4 ns</strong>, making it suitable for stable and efficient memory applications. <br><br>The device supports advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity under various operating conditions.<br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in demanding environments and long-life applications. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-7E-IT-G is optimized for space-constrained PCB designs while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC16M16A2P-7E-IT-G</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC16M16A2P-7E-IT-G

Description: The MT48LC16M16A2P-7E-IT-G is a high-performance 256Mbit synchron ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-7E IT:G / The <strong>MT48LC16M16A2P-7E IT:G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication equipment requiring reliable and stable volatile memory performance.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring predictable timing and efficient data transfer. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-7E IT:G supports clock frequencies up to approximately <strong>133 MHz</strong> with access times around <strong>5.4 ns</strong>, making it suitable for stable and efficient memory operation. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths, auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions. <br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, ensuring reliable performance in demanding environments and long-life applications. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-7E IT:G is optimized for space-constrained PCB designs while maintaining reliable electrical and thermal performance.<br><br>The <strong>MT48LC16M16A2P-7E IT:G</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC16M16A2P-7E IT:G

Description: The MT48LC16M16A2P-7E IT:G is a high-performance 256Mbit synchron ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-75:G / The <strong>MT48LC16M16A2P-75:G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, consumer electronics, and general-purpose applications requiring stable and cost-effective volatile memory solutions.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring predictable timing and reliable data transfer. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-75:G supports clock frequencies up to approximately <strong>133 MHz</strong>, making it suitable for stable and efficient memory performance in a wide range of applications. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions. <br><br>This variant is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronic systems and non-harsh environments.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-75:G is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC16M16A2P-75:G</strong> is widely used in <strong>embedded systems, communication equipment, industrial controllers, consumer electronics, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC16M16A2P-75:G

Description: The MT48LC16M16A2P-75:G is a high-performance 256Mbit synchronous ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-75 IT:G / The <strong>MT48LC16M16A2P-75 IT:G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications requiring reliable and cost-effective volatile memory.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring predictable timing and efficient data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-75 IT:G supports clock frequencies up to approximately <strong>133 MHz</strong> with access times around <strong>5.4 ns</strong>, making it suitable for stable and efficient memory performance. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, ensuring reliable performance in demanding environments and long-life applications. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-75 IT:G is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC16M16A2P-75 IT:G</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and high-speed SDRAM memory is required.
MT48LC16M16A2P-75 IT:G

Description: The MT48LC16M16A2P-75 IT:G is a high-performance 256Mbit synchron ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-6A-G / The <strong>MT48LC16M16A2P-6A-G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and general-purpose memory applications requiring stable and cost-effective volatile memory.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring predictable timing and reliable data transfer. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the device supports clock frequencies up to approximately <strong>167 MHz</strong> with access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and power-down modes</strong>, ensuring efficient memory management and data integrity across various operating conditions. <br><br>This variant is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronic systems and non-harsh environments. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-6A-G is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC16M16A2P-6A-G</strong> is widely used in <strong>embedded systems, communication equipment, industrial controllers, consumer electronics, and legacy computing platforms</strong> where stable and high-speed SDRAM memory is required.
MT48LC16M16A2P-6A-G

Description: The MT48LC16M16A2P-6A-G is a high-performance 256Mbit synchronous ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-6A:G Z / The <strong>MT48LC16M16A2P-6A:G Z</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, consumer electronics, and general-purpose memory applications requiring stable and cost-effective volatile memory.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring predictable timing and reliable data transfer. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-6A:G Z supports clock frequencies up to approximately <strong>167 MHz</strong> with access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The device supports advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and power-down modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is typically intended for <strong>standard commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for conventional electronics and non-harsh environments. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-6A:G Z is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC16M16A2P-6A:G Z</strong> is widely used in <strong>embedded systems, communication equipment, industrial controllers, consumer electronics, and legacy computing platforms</strong> where stable and high-speed SDRAM memory is required.
MT48LC16M16A2P-6A:G Z

Description: The MT48LC16M16A2P-6A:G Z is a high-performance 256Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-6A:G TR / The <strong>MT48LC16M16A2P-6A:G TR</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, communication equipment, and general-purpose applications requiring stable and cost-effective volatile memory.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent operations and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring predictable timing and reliable performance.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-6A:G TR supports clock frequencies up to approximately <strong>167 MHz</strong> with an access time of around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and power-down modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is supplied in <strong>tape and reel (TR) packaging</strong> for automated assembly processes and is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronics manufacturing environments. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-6A:G TR is optimized for space-efficient PCB layouts while maintaining reliable electrical and thermal performance.<br><br>The <strong>MT48LC16M16A2P-6A:G TR</strong> is widely used in <strong>embedded systems, industrial controllers, communication devices, consumer electronics, and legacy computing platforms</strong> where stable and high-speed SDRAM memory is required.
MT48LC16M16A2P-6A:G TR

Description: The MT48LC16M16A2P-6A:G TR is a high-performance 256Mbit synchron ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-6A:G T / The <strong>MT48LC16M16A2P-6A:G T</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, consumer electronics, and general-purpose applications requiring stable and cost-effective volatile memory solutions.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring predictable timing and reliable data transfer. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-6A:G T supports clock frequencies up to approximately <strong>167 MHz</strong> with access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and power-down modes</strong>, ensuring efficient memory management and data integrity across various operating conditions. <br><br>This variant is typically intended for <strong>standard commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for conventional electronic systems and non-harsh environments. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-6A:G T is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC16M16A2P-6A:G T</strong> is widely used in <strong>embedded systems, communication equipment, industrial controllers, consumer electronics, and legacy computing platforms</strong> where stable and high-speed SDRAM memory is required.
MT48LC16M16A2P-6A:G T

Description: The MT48LC16M16A2P-6A:G T is a high-performance 256Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-6A:G L / The <strong>MT48LC16M16A2P-6A:G L</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, consumer electronics, and general-purpose memory applications requiring stable and cost-effective volatile memory.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal for predictable timing and efficient data handling.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-6A:G L supports clock frequencies up to approximately <strong>167 MHz</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications.<br><br>The device supports advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronics and non-harsh environments. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-6A:G L is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC16M16A2P-6A:G L</strong> is widely used in <strong>embedded systems, consumer electronics, communication equipment, industrial controllers, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC16M16A2P-6A:G L

Description: The MT48LC16M16A2P-6A:G L is a high-performance 256Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-6A:G IT / The <strong>MT48LC16M16A2P-6A:G IT</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications requiring stable and reliable volatile memory performance.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal for predictable timing and efficient data handling. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-6A:G IT supports clock frequencies up to approximately <strong>167 MHz</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-refresh, and power-down modes</strong>, ensuring efficient memory management and data integrity across various operating conditions. <br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, ensuring reliable performance in demanding environments and long-life applications. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-6A:G IT is optimized for space-constrained PCB designs while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC16M16A2P-6A:G IT</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC16M16A2P-6A:G IT

Description: The MT48LC16M16A2P-6A:G IT is a high-performance 256Mbit synchron ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-6A:G AT / The <strong>MT48LC16M16A2P-6A:G AT</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for automotive, embedded, and industrial applications requiring reliable and high-speed volatile memory.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the system clock for predictable timing and efficient data handling.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-6A:G AT supports clock frequencies up to approximately <strong>167 MHz</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is designed for <strong>automotive-grade applications</strong>, supporting extended temperature operation and enhanced reliability for use in harsh environments and mission-critical systems.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-6A:G AT is optimized for space-constrained PCB layouts while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC16M16A2P-6A:G AT</strong> is widely used in <strong>automotive electronics, industrial controllers, embedded systems, communication equipment, and legacy computing platforms</strong> where stable and high-speed SDRAM memory is required.
MT48LC16M16A2P-6A:G AT

Description: The MT48LC16M16A2P-6A:G AT is a high-performance 256Mbit synchron ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-6A:G / The <strong>MT48LC16M16A2P-6A:G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, consumer electronics, and general-purpose memory applications requiring stable and cost-effective volatile memory.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal for predictable timing and reliable data handling.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-6A:G supports clock frequencies up to approximately <strong>167 MHz</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The device supports advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity under various operating conditions. <br><br>This variant is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronics and non-harsh environments. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-6A:G is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC16M16A2P-6A:G</strong> is widely used in <strong>embedded systems, consumer electronics, communication equipment, industrial controllers, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC16M16A2P-6A:G

Description: The MT48LC16M16A2P-6A:G is a high-performance 256Mbit synchronous ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-6A IT:G / The <strong>MT48LC16M16A2P-6A IT:G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication equipment requiring stable and reliable volatile memory performance.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal for predictable timing and efficient data handling.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-6A IT:G supports clock frequencies up to approximately <strong>167 MHz</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications.<br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in demanding environments and long-life applications.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-6A IT:G is optimized for space-constrained PCB designs while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC16M16A2P-6A IT:G</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC16M16A2P-6A IT:G

Description: The MT48LC16M16A2P-6A IT:G is a high-performance 256Mbit synchron ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-6A AT:G / The <strong>MT48LC16M16A2P-6A AT:G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, automotive electronics, and industrial applications requiring reliable volatile memory and stable data throughput.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system performance. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the system clock for predictable timing and efficient data handling.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-6A supports clock frequencies up to approximately <strong>167 MHz (-6A speed grade)</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications.<br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity under various operating conditions.<br><br>This variant is specified for <strong>automotive-grade operation</strong>, supporting extended temperature ranges typically up to <strong>+105°C</strong>, ensuring reliable performance in harsh environments and mission-critical systems.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-6A AT:G is optimized for space-constrained PCB designs while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC16M16A2P-6A AT:G</strong> is widely used in <strong>automotive electronics, industrial controllers, embedded systems, communication equipment, and legacy computing platforms</strong> where stable, high-speed SDRAM memory is required.
MT48LC16M16A2P-6A AT:G

Description: The MT48LC16M16A2P-6A AT:G is a high-performance 256Mbit synchron ...
Package: T&R | MOQ: 1000 | MPQ: 1000

NT5AD256M16F4-JR / The <strong>NT5AD256M16F4-JR</strong> is a high-performance <strong>4Gbit DDR4 synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, designed for embedded systems, industrial electronics, and high-speed computing applications requiring efficient bandwidth and low power consumption.<br><br>The device is organized as <strong>256M x 16 bits</strong> and features an advanced <strong>8-bank internal architecture</strong>, enabling parallel memory operations and improved data throughput. It utilizes a <strong>double data rate (DDR4) interface</strong>, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency.<br><br>Operating at a nominal voltage of <strong>1.2V</strong>, the NT5AD256M16F4-JR supports data rates up to <strong>3200 Mbps</strong>, making it suitable for high-speed and energy-efficient system designs. It is optimized for stable performance and reduced power consumption compared to previous DDR generations.<br><br>The device supports advanced features such as <strong>on-die termination (ODT), programmable burst lengths, auto-refresh, self-refresh, and power-down modes</strong>, ensuring reliable data integrity and optimized power management across various operating conditions.<br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5AD256M16F4-JR is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal efficiency.<br><br>The <strong>NT5AD256M16F4-JR</strong> is widely used in <strong>industrial controllers, networking equipment, embedded systems, consumer electronics, and computing platforms</strong> where high-speed volatile memory and reliable operation are required.
NT5AD256M16F4-JR

Description: The NT5AD256M16F4-JR is a high-performance 4Gbit DDR4 synchronous ...
Package: T&R | MOQ: 2000 | MPQ: 2000

NT5AD256M16E4-JRU / The <strong>NT5AD256M16E4-JRU</strong> is a high-performance <strong>4Gbit DDR4 synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, designed for industrial, embedded, and high-speed computing applications requiring reliable bandwidth and low power consumption.<br><br>The device is organized as <strong>256M x 16 bits</strong> and features an advanced <strong>8-bank internal architecture</strong>, enabling parallel memory operations and improved data throughput. It utilizes a <strong>double data rate (DDR4) interface</strong>, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency.<br><br>Operating at a nominal voltage of <strong>1.2V</strong>, the NT5AD256M16E4-JRU supports data rates up to <strong>3200 Mbps</strong>, making it suitable for high-speed and energy-efficient system designs. <br><br>This component is specified for <strong>industrial-grade operation</strong> with an extended temperature range of approximately <strong>-40°C to +105°C</strong>, ensuring stable and reliable performance in harsh environments. <br><br>The device supports advanced features such as <strong>on-die termination (ODT), programmable burst lengths, auto-refresh, self-refresh, and power-down modes</strong>, ensuring reliable data integrity and optimized power management across various operating conditions.<br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5AD256M16E4-JRU is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal performance.<br><br>The <strong>NT5AD256M16E4-JRU</strong> is widely used in <strong>industrial controllers, networking equipment, embedded systems, automotive electronics, and high-performance computing platforms</strong> where high-speed volatile memory and extended temperature reliability are required.
NT5AD256M16E4-JRU

Description: The NT5AD256M16E4-JRU is a high-performance 4Gbit DDR4 synchronou ...
Package: T&R | MOQ: 2000 | MPQ: 2000

NT5AD256M16E4-JRI / The <strong>NT5AD256M16E4-JRI</strong> is a high-performance <strong>4Gbit DDR4 synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, designed for industrial, embedded, and high-speed computing applications requiring reliable bandwidth and low power consumption.<br><br>The device is organized as <strong>256M x 16 bits</strong> and features an advanced <strong>8-bank internal architecture</strong>, enabling parallel memory operations and improved data throughput. It utilizes a <strong>double data rate (DDR4) interface</strong>, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency. <br><br>Operating at a nominal voltage of <strong>1.2V</strong>, the NT5AD256M16E4-JRI supports data rates up to <strong>3200 Mbps</strong>, making it suitable for high-speed and energy-efficient system designs. It is optimized for stable operation and reduced power consumption compared to earlier memory generations. <br><br>The device is specified for an extended <strong>industrial temperature range of -40°C to +95°C</strong>, ensuring reliable performance in harsh environments and long-life applications. It also supports features such as <strong>auto-refresh, self-refresh, and power-down modes</strong> to maintain data integrity and optimize system power management. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5AD256M16E4-JRI is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal efficiency. <br><br>The <strong>NT5AD256M16E4-JRI</strong> is widely used in <strong>industrial controllers, networking equipment, embedded systems, automotive electronics, and computing platforms</strong> where high-speed volatile memory and reliable operation are required.
NT5AD256M16E4-JRI

Description: The NT5AD256M16E4-JRI is a high-performance 4Gbit DDR4 synchronou ...
Package: T&R | MOQ: 2000 | MPQ: 2000

W664GG6RB06J / The <strong>W664GG6RB06J</strong> is a high-performance <strong>4Gbit DDR4 synchronous DRAM</strong> developed by <strong>Winbond Electronics</strong>, designed for embedded systems, industrial computing, and high-speed memory applications requiring efficient bandwidth and low power consumption.<br><br>The device is organized as <strong>256M x 16 bits</strong> and features an advanced <strong>multi-bank architecture</strong>, enabling parallel memory operations and improved data throughput. It utilizes a <strong>DDR4 interface with POD12 signaling</strong>, ensuring reliable high-speed data transfer and improved signal integrity.<br><br>Operating at a nominal voltage of <strong>1.2V</strong>, the W664GG6RB06J supports clock frequencies up to <strong>1600 MHz</strong>, providing stable performance while maintaining reduced power consumption compared to earlier DDR memory generations.<br><br>The device includes essential features such as <strong>auto-refresh, self-refresh, burst operation, and advanced timing control</strong>, ensuring reliable data retention and optimized system performance under varying operating conditions.<br><br>Packaged in a compact <strong>96-ball VFBGA surface-mount form factor</strong>, the W664GG6RB06J is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal efficiency.<br><br>The <strong>W664GG6RB06J</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, automotive electronics, and high-performance computing platforms</strong> where reliable and high-speed volatile memory is required.
W664GG6RB06J

Description: The W664GG6RB06J is a high-performance 4Gbit DDR4 synchronous DRA ...
Package: TRAY | MOQ: 198 | MPQ: 198

W664GG6RB06I / The <strong>W664GG6RB06I</strong> is a high-performance <strong>4Gbit DDR4 synchronous DRAM</strong> developed by <strong>Winbond Electronics</strong>, designed for embedded systems, industrial computing, and high-speed memory applications requiring efficient bandwidth and low power consumption.<br><br>The device is organized as <strong>256M x 16 bits</strong> and features an advanced <strong>multi-bank architecture</strong>, enabling parallel operations and improved data throughput. It utilizes a <strong>DDR4 interface with POD12 signaling</strong>, allowing reliable high-speed data transfer on both clock edges with enhanced signal integrity.<br><br>Operating at a nominal voltage of <strong>1.2V</strong>, the W664GG6RB06I supports clock frequencies up to <strong>1600 MHz</strong> and data rates suitable for modern high-speed applications, while maintaining reduced power consumption compared to previous DDR generations.<br><br>The device incorporates key features such as <strong>auto-refresh, self-refresh, burst operation, and advanced timing control</strong>, ensuring stable data retention and optimized performance across various system conditions. It also supports industrial temperature operation for reliable use in demanding environments.<br><br>Packaged in a compact <strong>96-ball VFBGA surface-mount form factor</strong>, the W664GG6RB06I is optimized for high-density PCB layouts and robust signal integrity in space-constrained designs.<br><br>The <strong>W664GG6RB06I</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, automotive electronics, and high-performance computing platforms</strong> where reliable and high-speed volatile memory is required.
W664GG6RB06I

Description: The W664GG6RB06I is a high-performance 4Gbit DDR4 synchronous DRA ...
Package: TRAY | MOQ: 198 | MPQ: 198

NT5CC512M8EQ-EKA / The <strong>NT5CC512M8EQ-EKA</strong> is a high-performance <strong>4Gbit DDR3L synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, specifically designed for automotive, industrial, and embedded applications requiring reliable high-speed memory with low power consumption.<br><br>The device is organized as <strong>512M x 8 bits</strong> and features an advanced <strong>8-bank internal architecture</strong>, enabling efficient parallel operations and improved data throughput. It utilizes a <strong>double data rate (DDR3L) interface</strong>, allowing data transfer on both rising and falling edges of the clock signal for enhanced bandwidth efficiency.<br><br>Operating at a nominal voltage of <strong>1.35V</strong>, the NT5CC512M8EQ-EKA supports data rates up to <strong>1866 Mbps</strong>, making it suitable for high-speed and energy-efficient system designs. Its low-voltage operation helps reduce overall system power consumption compared to standard DDR3 memory solutions.<br><br>This component is qualified for <strong>automotive-grade applications</strong> and supports an extended temperature range of approximately <strong>-40°C to +95°C</strong>, ensuring stable and reliable performance in harsh environments and mission-critical systems.<br><br>The device includes essential features such as <strong>programmable burst lengths, auto-refresh, self-refresh, and power-down modes</strong>, ensuring data integrity and optimized power management under various operating conditions.<br><br>Packaged in a compact <strong>78-ball FBGA surface-mount form factor</strong>, the NT5CC512M8EQ-EKA is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal reliability.<br><br>The <strong>NT5CC512M8EQ-EKA</strong> is widely used in <strong>automotive electronics, industrial controllers, embedded systems, networking equipment, and high-reliability computing platforms</strong> where stable, low-power, and high-speed volatile memory is required.
NT5CC512M8EQ-EKA

Description: The NT5CC512M8EQ-EKA is a high-performance 4Gbit DDR3L synchronou ...
Package: T&R | MOQ: 2000 | MPQ: 2000

NT5CB256M8GN-DI / The <strong>NT5CB256M8GN-DI</strong> is a high-performance <strong>2Gbit DDR3 synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, designed for embedded systems, industrial electronics, and computing applications requiring reliable memory bandwidth and stable operation.<br><br>The device is organized as <strong>256M x 8 bits</strong> and features an advanced <strong>8-bank internal architecture</strong>, enabling parallel memory operations and improved data throughput. It utilizes a <strong>double data rate (DDR3) interface</strong>, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency.<br><br>Operating at a nominal voltage of <strong>1.5V</strong>, the NT5CB256M8GN-DI supports data rates up to <strong>1600 Mbps</strong> with a clock frequency around <strong>800 MHz</strong>, making it suitable for high-speed applications while maintaining balanced power consumption.<br><br>The device supports key features such as <strong>programmable burst lengths, auto-refresh, self-refresh, and power-down modes</strong>, ensuring reliable data integrity and efficient operation across various system conditions.<br><br>Packaged in a compact <strong>78-ball FBGA surface-mount form factor</strong>, the NT5CB256M8GN-DI is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal performance.<br><br>The <strong>NT5CB256M8GN-DI</strong> is widely used in <strong>embedded systems, networking equipment, industrial controllers, consumer electronics, and computing platforms</strong> where stable and high-speed volatile memory is required.
NT5CB256M8GN-DI

Description: The NT5CB256M8GN-DI is a high-performance 2Gbit DDR3 synchronous ...
Package: T&R | MOQ: 2000 | MPQ: 2000

NT5DS32M16ES-5T / The <strong>NT5DS32M16ES-5T</strong> is a high-performance <strong>512Mbit DDR synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, designed for embedded systems, industrial electronics, and high-speed memory applications requiring reliable bandwidth and stable operation.<br><br>The device is organized as <strong>32M x 16 bits</strong> and features an advanced <strong>4-bank internal architecture</strong>, enabling concurrent operations and improved data throughput. It utilizes a <strong>double data rate (DDR) interface</strong>, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency. <br><br>Operating at a nominal voltage of <strong>2.5V</strong>, the NT5DS32M16ES-5T supports data rates up to <strong>400 Mbps (DDR-400)</strong> with clock speeds around <strong>200 MHz</strong>, making it suitable for high-speed applications while maintaining stable power consumption. <br><br>The device supports key features such as <strong>programmable burst lengths, auto-refresh, and self-refresh</strong>, ensuring reliable data integrity and efficient memory operation across various system conditions.<br><br>Packaged in a compact <strong>66-pin TSOP-II surface-mount form factor</strong>, the NT5DS32M16ES-5T is optimized for space-efficient PCB layouts while maintaining reliable signal integrity and thermal performance.<br><br>The <strong>NT5DS32M16ES-5T</strong> is widely used in <strong>industrial controllers, networking equipment, embedded systems, consumer electronics, and legacy computing platforms</strong> where stable DDR memory performance and cost-effective solutions are required.
NT5DS32M16ES-5T

Description: The NT5DS32M16ES-5T is a high-performance 512Mbit DDR synchronous ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5AD512M16C4-JR / The <strong>NT5AD512M16C4-JR</strong> is a high-performance <strong>8Gbit DDR4 synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, designed for embedded systems, industrial electronics, and high-speed computing applications requiring reliable bandwidth and low power consumption.<br><br>The device is organized as <strong>512M x 16 bits</strong> and features an advanced <strong>multi-bank architecture</strong> with bank grouping, enabling parallel operations and improved data throughput. It utilizes a <strong>double data rate (DDR4) interface</strong>, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency.<br><br>Operating at a nominal voltage of <strong>1.2V</strong>, the NT5AD512M16C4-JR supports data rates up to <strong>3200 Mbps</strong>, making it suitable for high-speed and energy-efficient system designs. Its architecture is optimized for improved performance and reduced power consumption compared to earlier DDR generations.<br><br>The device includes advanced features such as <strong>on-die termination (ODT), auto-refresh, self-refresh, and temperature-compensated refresh</strong>, ensuring reliable data integrity and stable operation across varying environmental conditions.<br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5AD512M16C4-JR is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal efficiency.<br><br>The <strong>NT5AD512M16C4-JR</strong> is widely used in <strong>industrial controllers, networking equipment, embedded systems, consumer electronics, and computing platforms</strong> where high-speed volatile memory and dependable performance are required.
NT5AD512M16C4-JR

Description: The NT5AD512M16C4-JR is a high-performance 8Gbit DDR4 synchronous ...
Package: T&R | MOQ: 2000 | MPQ: 2000

NT5CC256M16ER-EKI / The <strong>NT5CC256M16ER-EKI</strong> is a high-performance <strong>4Gbit DDR3L synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, designed for embedded systems, industrial electronics, and high-speed computing applications requiring efficient bandwidth and low power consumption.<br><br>The device is organized as <strong>256M x 16 bits</strong> and features an advanced <strong>8-bank internal architecture</strong>, enabling parallel operations and improved data throughput. It utilizes a <strong>double data rate (DDR3L) interface</strong>, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency.<br><br>Operating at a nominal voltage of <strong>1.35V</strong>, the NT5CC256M16ER-EKI supports data rates up to <strong>1866 Mbps</strong>, making it suitable for high-speed and energy-efficient system designs. Its low-voltage operation reduces overall power consumption compared to standard DDR3 memory solutions.<br><br>The device supports key features such as <strong>programmable burst lengths, auto-refresh, self-refresh, and power-down modes</strong>, ensuring reliable data integrity and optimized power management across various operating conditions.<br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC256M16ER-EKI is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal performance.<br><br>The <strong>NT5CC256M16ER-EKI</strong> is widely used in <strong>industrial controllers, networking equipment, embedded systems, consumer electronics, and computing platforms</strong> where high-speed volatile memory and low power operation are required.
NT5CC256M16ER-EKI

Description: The NT5CC256M16ER-EKI is a high-performance 4Gbit DDR3L synchrono ...
Package: T&R | MOQ: 2000 | MPQ: 2000

NT5CC512M8EQ-EKI / The <strong>NT5CC512M8EQ-EKI</strong> is a high-performance <strong>4Gbit DDR3L synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, designed for embedded systems, industrial electronics, and computing applications requiring efficient memory bandwidth and reduced power consumption.<br><br>The device is organized as <strong>512M x 8 bits</strong> and features an advanced <strong>8-bank internal architecture</strong>, enabling parallel memory operations and improved data throughput. It utilizes a <strong>double data rate (DDR3L) interface</strong>, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency.<br><br>Operating at a nominal voltage of <strong>1.35V</strong>, the NT5CC512M8EQ-EKI supports data rates up to <strong>1866 Mbps</strong>, making it suitable for high-speed and energy-efficient system designs. Its low-voltage operation reduces overall power consumption compared to standard DDR3 memory solutions.<br><br>The device supports key features such as <strong>programmable burst lengths, auto-refresh, self-refresh, and power-down modes</strong>, ensuring reliable data integrity and optimized power management across various operating conditions.<br><br>Packaged in a compact <strong>78-ball FBGA surface-mount form factor</strong>, the NT5CC512M8EQ-EKI is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal performance.<br><br>The <strong>NT5CC512M8EQ-EKI</strong> is widely used in <strong>industrial controllers, networking equipment, embedded systems, consumer electronics, and computing platforms</strong> where high-speed volatile memory and low power operation are required.
NT5CC512M8EQ-EKI

Description: The NT5CC512M8EQ-EKI is a high-performance 4Gbit DDR3L synchronou ...
Package: T&R | MOQ: 2000 | MPQ: 2000

NT5CB64M16GP-EK / The <strong>NT5CB64M16GP-EK</strong> is a high-performance <strong>1Gbit DDR3 synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, designed for embedded systems, industrial electronics, and computing applications requiring reliable memory bandwidth and stable performance.<br><br>The device is organized as <strong>64M x 16 bits</strong> and features an advanced <strong>8-bank internal architecture</strong>, enabling parallel memory operations and improved data throughput. It utilizes a <strong>double data rate (DDR3) interface</strong>, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency. <br><br>Operating at a nominal voltage of <strong>1.5V</strong>, the NT5CB64M16GP-EK supports data rates up to <strong>1866 Mbps</strong> with a clock frequency around <strong>933 MHz</strong>, making it suitable for high-speed applications while maintaining balanced power consumption. <br><br>The device includes key features such as <strong>programmable burst lengths, auto-refresh, self-refresh, and power-down modes</strong>, ensuring reliable data integrity and efficient power management across various operating conditions.<br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CB64M16GP-EK is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal performance. <br><br>The <strong>NT5CB64M16GP-EK</strong> is widely used in <strong>embedded systems, networking equipment, industrial controllers, consumer electronics, and computing platforms</strong> where stable and high-speed volatile memory is required.
NT5CB64M16GP-EK

Description: The NT5CB64M16GP-EK is a high-performance 1Gbit DDR3 synchronous ...
Package: T&R | MOQ: 2000 | MPQ: 2000

NT6CL256M32AM-H1 / The <strong>NT6CL256M32AM-H1</strong> is a high-performance <strong>8Gbit Mobile DDR3 SDRAM (LPDDR3)</strong> developed by <strong>Nanya Technology</strong>, designed for mobile, embedded, and high-efficiency computing applications requiring low power consumption and high data throughput.<br><br>The device is organized as <strong>256M x 32 bits</strong> and features an advanced <strong>8-bank internal architecture</strong>, enabling parallel memory operations and improved bandwidth efficiency. It utilizes a <strong>double data rate interface</strong>, allowing data transfer on both clock edges for high-speed performance.<br><br>Operating at a nominal voltage of <strong>1.2V</strong>, the NT6CL256M32AM-H1 supports data rates up to <strong>1866 Mbps</strong>, making it suitable for high-speed and energy-efficient system designs. It also supports a wide operating temperature range, ensuring stable performance in various environments.<br><br>The device integrates advanced power-saving features such as <strong>self-refresh, deep power-down modes, and optimized standby operation</strong>, helping to reduce overall system power consumption while maintaining data integrity.<br><br>Packaged in a compact <strong>178-ball FBGA surface-mount form factor</strong>, the NT6CL256M32AM-H1 is optimized for high-density PCB layouts and reliable signal integrity in modern electronic systems.<br><br>The <strong>NT6CL256M32AM-H1</strong> is widely used in <strong>smartphones, tablets, embedded systems, IoT devices, industrial electronics, and communication equipment</strong> where low power consumption and high-speed volatile memory are required.
NT6CL256M32AM-H1

Description: The NT6CL256M32AM-H1 is a high-performance 8Gbit Mobile DDR3 SDRA ...
Package: T&R | MOQ: 1000 | MPQ: 1000

NT5AD512M16C4-HR / The <strong>NT5AD512M16C4-HR</strong> is a high-performance <strong>8Gbit DDR4 synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, designed for embedded systems, industrial computing, and high-speed memory applications requiring reliable bandwidth and low power consumption.<br><br>The device is organized as <strong>512M x 16 bits</strong> and features an advanced <strong>multi-bank architecture</strong>, enabling parallel memory operations and improved data throughput. It utilizes a <strong>double data rate (DDR4) interface</strong>, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency.<br><br>Operating at a nominal voltage of <strong>1.2V</strong>, the NT5AD512M16C4-HR supports data rates up to <strong>2666 Mbps</strong> with a clock frequency around <strong>1333 MHz</strong>, making it suitable for high-speed and energy-efficient system designs.<br><br>The device supports key features such as <strong>programmable burst lengths, auto-refresh, self-refresh, and power-down modes</strong>, ensuring reliable data integrity and optimized power management across various operating conditions.<br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5AD512M16C4-HR is optimized for high-density PCB layouts while maintaining excellent signal integrity and thermal performance.<br><br>The <strong>NT5AD512M16C4-HR</strong> is widely used in <strong>industrial controllers, networking equipment, embedded systems, computing platforms, and consumer electronics</strong> where high-speed volatile memory and reliable operation are required.
NT5AD512M16C4-HR

Description: The NT5AD512M16C4-HR is a high-performance 8Gbit DDR4 synchronous ...
Package: T&R | MOQ: 2000 | MPQ: 2000

NT5AD256M16E4-JR / The <strong>NT5AD256M16E4-JR</strong> is a high-performance <strong>4Gbit DDR4 synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, designed for embedded systems, industrial computing, and high-speed memory applications requiring efficient bandwidth and low power consumption.<br><br>The device is organized as <strong>256M x 16 bits</strong> and features an advanced <strong>multi-bank architecture</strong>, enabling parallel memory operations and improved data throughput. It utilizes a <strong>double data rate (DDR4) interface</strong>, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency.<br><br>Operating at a nominal voltage of <strong>1.2V</strong>, the NT5AD256M16E4-JR supports data rates up to <strong>3200 Mbps</strong>, making it suitable for high-speed and energy-efficient system designs. Its architecture is optimized for stable performance and reduced power consumption compared to previous DDR generations.<br><br>The device supports key features such as <strong>programmable burst lengths, auto-refresh, self-refresh, and power-down modes</strong>, ensuring reliable data integrity and optimized power management across various operating conditions.<br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5AD256M16E4-JR is optimized for high-density PCB layouts while maintaining excellent signal integrity and thermal performance.<br><br>The <strong>NT5AD256M16E4-JR</strong> is widely used in <strong>industrial controllers, networking equipment, embedded systems, computing platforms, and consumer electronics</strong> where high-speed volatile memory and reliable operation are required.
NT5AD256M16E4-JR

Description: The NT5AD256M16E4-JR is a high-performance 4Gbit DDR4 synchronous ...
Package: T&R | MOQ: 2000 | MPQ: 2000

NT5CC64M16GP-DI / The <strong>NT5CC64M16GP-DI</strong> is a high-performance <strong>1Gbit DDR3L synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, designed for embedded systems, industrial electronics, and computing applications requiring efficient memory bandwidth and low power consumption.<br><br>The device is organized as <strong>64M x 16 bits</strong> and features an advanced <strong>8-bank internal architecture</strong>, enabling parallel operations and improved data throughput. It utilizes a <strong>double data rate (DDR) interface</strong>, allowing data transfer on both rising and falling edges of the clock signal for higher efficiency.<br><br>Operating at a nominal voltage of <strong>1.35V</strong>, the NT5CC64M16GP-DI supports data rates up to <strong>1600 Mbps</strong> with a clock frequency around <strong>800 MHz</strong>, making it suitable for high-speed and energy-efficient designs.<br><br>The device includes key features such as <strong>programmable burst lengths, auto-refresh, self-refresh, and power-down modes</strong>, ensuring data integrity and optimized power management in various operating conditions.<br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC64M16GP-DI is optimized for high-density PCB layouts while maintaining reliable signal integrity and thermal performance.<br><br>The <strong>NT5CC64M16GP-DI</strong> is widely used in <strong>embedded systems, networking equipment, industrial controllers, consumer electronics, and computing platforms</strong> where high-speed volatile memory and low power operation are required.
NT5CC64M16GP-DI

Description: The NT5CC64M16GP-DI is a high-performance 1Gbit DDR3L synchronous ...
Package: T&R | MOQ: 2000 | MPQ: 2000

NT5CB128M16JR-FL / The <strong>NT5CB128M16JR-FL</strong> is a high-performance <strong>2Gbit DDR3 synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, designed for embedded systems, computing platforms, and high-speed memory applications requiring reliable bandwidth and stable operation.<br><br>The device is organized as <strong>128M x 16 bits</strong> and features an advanced <strong>8-bank internal architecture</strong>, enabling parallel memory operations and improved data throughput. It utilizes a <strong>double data rate (DDR) interface</strong>, allowing data transfer on both rising and falling edges of the clock for enhanced efficiency. <br><br>Operating at a nominal voltage of <strong>1.5V</strong>, the NT5CB128M16JR-FL supports data rates up to <strong>2133 Mbps</strong> with a clock frequency around <strong>1066 MHz</strong>, making it suitable for high-speed and bandwidth-intensive applications. <br><br>The device supports key features such as <strong>programmable burst lengths, auto-refresh, self-refresh, and power-down modes</strong>, ensuring data integrity and efficient power management in various system conditions.<br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CB128M16JR-FL is optimized for high-density PCB layouts while maintaining reliable signal integrity and thermal performance. <br><br>The <strong>NT5CB128M16JR-FL</strong> is widely used in <strong>industrial controllers, networking equipment, embedded systems, computing devices, and consumer electronics</strong> where high-speed volatile memory and stable performance are required.
NT5CB128M16JR-FL

Description: The NT5CB128M16JR-FL is a high-performance 2Gbit DDR3 synchronous ...
Package: T&R | MOQ: 2000 | MPQ: 2000

NT5CC512M8EQ-EK / The <strong>NT5CC512M8EQ-EK</strong> is a high-performance <strong>4Gbit DDR3L synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, designed for embedded systems, computing platforms, and high-speed memory applications requiring efficient bandwidth and low power consumption.<br><br>The device is organized as <strong>512M x 8 bits</strong> and features an advanced <strong>8-bank internal architecture</strong>, enabling parallel operations and improved data throughput. It utilizes a <strong>double data rate (DDR) interface</strong> with synchronous operation, allowing data transfer on both clock edges for increased efficiency.<br><br>Operating at a nominal voltage of <strong>1.35V</strong>, the NT5CC512M8EQ-EK supports data rates up to <strong>1866 Mbps</strong> with a clock frequency around <strong>933 MHz</strong>, making it suitable for high-speed and energy-efficient designs. Its low-voltage operation reduces power consumption compared to standard DDR3 memory.<br><br>The device supports key features such as <strong>programmable burst lengths, auto refresh, self-refresh, and power-down modes</strong>, ensuring data integrity and optimized power management in various operating conditions.<br><br>Packaged in a compact <strong>78-ball FBGA surface-mount form factor</strong>, the NT5CC512M8EQ-EK is optimized for high-density PCB layouts while maintaining reliable signal integrity and thermal performance.<br><br>The <strong>NT5CC512M8EQ-EK</strong> is widely used in <strong>industrial controllers, networking equipment, embedded systems, consumer electronics, and computing devices</strong> where high-speed volatile memory and low power operation are essential.
NT5CC512M8EQ-EK

Description: The NT5CC512M8EQ-EK is a high-performance 4Gbit DDR3L synchronous ...
Package: T&R | MOQ: 2000 | MPQ: 2000

NT6DM16M32BC-T1 / The <strong>NT6DM16M32BC-T1</strong> is a high-speed <strong>512Mbit Mobile DDR SDRAM (LPDDR)</strong> developed by <strong>Nanya Technology</strong>, designed for low-power embedded systems, mobile devices, and portable electronics requiring efficient memory performance and reduced power consumption.<br><br>The device is organized as <strong>16M x 32 bits</strong> with an internal <strong>4-bank architecture</strong>, enabling concurrent operations and improved data throughput. It utilizes a <strong>double data rate (DDR) interface</strong> with a 2n prefetch architecture, allowing data transfer on both clock edges for higher bandwidth efficiency. <br><br>Operating at a nominal supply voltage of <strong>1.8V (VDD/VDDQ)</strong>, the NT6DM16M32BC-T1 supports data rates up to approximately <strong>400 Mbps</strong> and clock frequencies around <strong>200 MHz</strong>, making it suitable for high-speed, low-power applications. <br><br>The device incorporates advanced power-saving features such as <strong>deep power-down mode, partial array self-refresh (PASR), and temperature-compensated self-refresh (TCSR)</strong>, enabling optimized energy efficiency in battery-powered systems. It also supports programmable burst lengths and auto-precharge functionality for flexible memory access control. <br><br>Packaged in a compact <strong>90-ball VFBGA surface-mount form factor</strong>, the NT6DM16M32BC-T1 is optimized for space-constrained PCB layouts while maintaining reliable signal integrity and thermal performance.<br><br>The <strong>NT6DM16M32BC-T1</strong> is widely used in <strong>mobile devices, embedded systems, handheld electronics, industrial controllers, IoT devices, and communication equipment</strong> where low power consumption and high-speed volatile memory are required.
NT6DM16M32BC-T1

Description: The NT6DM16M32BC-T1 is a high-speed 512Mbit Mobile DDR SDRAM (LPD ...
Package: T&R | MOQ: 1900 | MPQ: 1900

AOZ1024DI / The <strong>AOZ1024DI</strong> is a high-efficiency <strong>synchronous buck (step-down) DC-DC regulator</strong> developed by <strong>Alpha & Omega Semiconductor</strong>, designed for power management applications requiring compact size, high efficiency, and reliable voltage regulation. It is part of the EZBuck™ family and integrates advanced control circuitry for optimized performance.<br><br>The device supports an input voltage range of <strong>4.5V to 16V</strong> and provides an <strong>adjustable output voltage from 0.8V up to 16V</strong>, delivering up to <strong>4A output current</strong>. Its synchronous rectification architecture improves efficiency and reduces power loss, making it suitable for high-performance and thermally constrained designs. <br><br>The AOZ1024DI operates at a switching frequency of approximately <strong>500kHz</strong>, enabling the use of smaller external components and supporting compact PCB layouts. It also includes features such as <strong>soft-start control, over-current protection, and thermal shutdown</strong>, ensuring stable and safe operation in various system conditions. <br><br>Designed for surface-mount applications, the device is housed in a compact <strong>8-pin DFN package with exposed pad</strong>, providing improved thermal performance and efficient heat dissipation. It operates over a temperature range of approximately <strong>-40°C to +85°C</strong>, suitable for industrial environments. <br><br>The <strong>AOZ1024DI</strong> is widely used in <strong>power supplies, embedded systems, telecom equipment, consumer electronics, and distributed power architectures</strong> where efficient step-down voltage conversion and compact design are required.
AOZ1024DI

Description: The AOZ1024DI is a high-efficiency synchronous buck (step-down) D ...
Package: T&R | MOQ: 3000 | MPQ: 3000

Q04303CZ-5 / The <strong>Q04303CZ-5</strong> is a compact <strong>RF antenna designed for the 433 MHz ISM band</strong>, commonly used in wireless communication systems, remote control applications, and industrial telemetry. It is optimized for stable signal transmission and reception in low-power RF environments.<br><br>The antenna operates within a frequency range centered around <strong>433 MHz</strong> and provides a typical gain of approximately <strong>3 dBi</strong>, ensuring reliable communication performance over short to medium distances. It features a <strong>voltage standing wave ratio (VSWR) of ≤2.0</strong>, enabling efficient signal matching and reduced transmission loss. <br><br>The device utilizes a <strong>vertical polarization design</strong>, which is widely adopted in RF communication systems for consistent omnidirectional coverage. Its structure is optimized for stable radiation characteristics and dependable performance in embedded and external antenna configurations.<br><br>Designed as a <strong>terminal/external antenna solution</strong>, the Q04303CZ-5 can be easily integrated into wireless modules and communication devices using standard connectors. Its compact form factor allows flexible installation in space-constrained applications.<br><br>The <strong>Q04303CZ-5</strong> is widely used in <strong>wireless data transmission, IoT devices, remote control systems, smart metering, industrial automation, and RF communication equipment</strong> where reliable 433 MHz signal performance is required.
Q04303CZ-5

Description: The Q04303CZ-5 is a compact RF antenna designed for the 433 MHz I ...
Package: BULK | MOQ: 600 | MPQ: 60

TLP185(GB-TPL,SE / The <strong>TLP185 (GB-TPL,SE)</strong> is a compact and high-reliability <strong>phototransistor output optocoupler</strong> developed by <strong>Toshiba</strong>, designed to provide electrical isolation between input and output circuits in industrial, consumer, and communication systems. It integrates a <strong>high-efficiency infrared LED and a phototransistor detector</strong> in a single package, ensuring safe and noise-resistant signal transmission.<br><br>This device features a <strong>single-channel configuration</strong> with an isolation voltage of up to <strong>3750Vrms</strong>, enabling robust protection against high-voltage transients and electrical interference. It supports an output voltage of up to <strong>80V</strong> and a collector current of <strong>50mA</strong>, making it suitable for switching and signal isolation applications. <br><br>The TLP185 provides a <strong>current transfer ratio (CTR) range of 100% to 600%</strong>, allowing flexible operation across different signal levels and ensuring reliable performance in varying circuit conditions. Its fast switching characteristics and stable operation make it ideal for logic interfacing and control signal isolation. <br><br>Designed for surface-mount applications, it is housed in a compact <strong>SOP-4 / SO6-4 package</strong>, enabling efficient PCB space utilization while maintaining excellent insulation and thermal characteristics. The device operates over a wide temperature range of <strong>-55°C to +110°C</strong>, ensuring dependable performance in harsh environments. <br><br>The <strong>TLP185 (GB-TPL,SE)</strong> is widely used in <strong>industrial automation, power supplies, PLC systems, microcontroller interfacing, signal isolation circuits, and communication equipment</strong> where high isolation, compact size, and reliable switching performance are essential.
TLP185(GB-TPL,SE

Description: The TLP185 (GB-TPL,SE) is a compact and high-reliability phototra ...
Package: T&R | MOQ: 3000 | MPQ: 3000

ECA-1HHG331 / The <strong>ECA-1HHG331</strong> is a high-reliability <strong>aluminum electrolytic capacitor</strong> manufactured by <strong>Panasonic</strong>, designed for general-purpose and industrial electronic applications requiring stable capacitance and long operational life. It belongs to the NHG series, known for its durability and consistent electrical performance.<br><br>This capacitor offers a capacitance of <strong>330µF</strong> with a rated voltage of <strong>50V DC</strong> and a tolerance of <strong>±20%</strong>, making it suitable for power supply filtering, smoothing, and energy storage applications. It features a <strong>polarized radial lead configuration</strong>, enabling easy integration into through-hole PCB designs.<br><br>The device is rated for operation across a wide temperature range of <strong>-55°C to +105°C</strong> and provides a load life of approximately <strong>2000 hours at 105°C</strong>, ensuring long-term reliability in demanding environments. It also supports relatively high ripple current capability, making it effective in power circuits and voltage regulation stages.<br><br>With a compact cylindrical form factor of approximately <strong>10mm diameter and 16mm height</strong> and a <strong>5mm lead pitch</strong>, the ECA-1HHG331 is optimized for space-efficient PCB layouts while maintaining strong electrical characteristics.<br><br>The <strong>ECA-1HHG331</strong> is widely used in <strong>power supplies, industrial equipment, consumer electronics, control systems, and general-purpose electronic circuits</strong> where reliable bulk capacitance and stable performance are required.
ECA-1HHG331

Description: The ECA-1HHG331 is a high-reliability aluminum electrolytic capac ...
Package: Bulk | MOQ: 2000 | MPQ: 200

DSPIC30F6014A-30I/PF / The <strong>DSPIC30F6014A-30I/PF</strong> is a high-performance <strong>16-bit Digital Signal Controller (DSC)</strong> developed by <strong>Microchip Technology</strong>, designed for embedded control, industrial automation, motor control, and digital signal processing applications. It combines the benefits of a microcontroller with DSP functionality, making it suitable for systems that require both fast computation and real-time peripheral control.<br><br>It delivers performance up to <strong>30 MIPS</strong> and integrates <strong>144KB Flash program memory</strong>, <strong>8KB RAM</strong>, and <strong>4KB EEPROM</strong>, providing sufficient memory space for complex firmware and control algorithms. Its architecture is optimized for efficient arithmetic processing, high-speed interrupt handling, and deterministic operation in demanding embedded designs.<br><br>The device includes a rich set of on-chip peripherals such as a <strong>16-channel 12-bit ADC</strong>, communication interfaces, timers, PWM modules, and input capture/output compare functions, allowing direct integration into motion control, power conversion, and sensing applications. This makes it especially effective in designs where precise timing and mixed-signal control are required.<br><br>Operating over a supply range of approximately <strong>2.5V to 5.5V</strong>, the DSPIC30F6014A-30I/PF is available in a compact <strong>80-pin TQFP surface-mount package</strong> and the <strong>-30I</strong> industrial grade is specified for operation from <strong>-40°C to +85°C</strong>. These characteristics make it suitable for reliable long-term use in industrial and embedded hardware platforms.<br><br>The <strong>DSPIC30F6014A-30I/PF</strong> is widely used in <strong>motor drives, industrial controllers, power management systems, instrumentation, embedded automation products, and DSP-based control systems</strong> where robust 16-bit processing and integrated analog control features are required.
DSPIC30F6014A-30I/PF

Description: The DSPIC30F6014A-30I/PF is a high-performance 16-bit Digital Sig ...
Package: TRAY | MOQ: 360 | MPQ: 90

W55MH32Q / The <strong>W55MH32</strong> is a high-performance <strong>32-bit Arm Cortex-M3 microcontroller</strong> developed by <strong>WIZnet</strong>, designed for secure embedded networking, industrial automation, and IoT applications. It integrates a powerful MCU core with a <strong>hardwired TCP/IP stack</strong>, <strong>10/100 Ethernet MAC and PHY</strong>, and a wide range of on-chip peripherals, enabling efficient real-time communication without requiring an external network controller. <br><br>This device operates at frequencies up to <strong>216 MHz</strong> and includes <strong>1024KB of Flash memory</strong> and <strong>96KB of SRAM</strong>, making it suitable for firmware-intensive applications that require stable performance, fast response, and reliable data handling. Its built-in networking engine reduces CPU overhead and improves throughput in Ethernet-based systems. <br><br>The W55MH32 also incorporates advanced security and system features such as a <strong>hardware encryption engine</strong>, <strong>true random number generator (TRNG)</strong>, DMA controller, timers, ADCs, DACs, USB, CAN, SPI, I2C, and UART interfaces. These features make it highly adaptable for connected devices requiring secure communication and rich peripheral integration. <br><br>The device supports an operating voltage range of approximately <strong>2.0V to 3.6V</strong> and is available in multiple compact <strong>QFN package options</strong>, including <strong>68-pin and 100-pin variants</strong>, allowing flexibility across space-constrained and feature-rich PCB designs. <br><br>The <strong>W55MH32</strong> is widely used in <strong>industrial IoT gateways, smart energy systems, network-enabled controllers, security devices, automation products, and embedded Ethernet applications</strong> where integrated networking, processing capability, and hardware-level security are essential.
W55MH32Q

Description: The W55MH32 is a high-performance 32-bit Arm Cortex-M3 microcontr ...
Package: TRAY | MOQ: 250 | MPQ: 250













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