NT5AD512M16H4-JR, SDRAM, from Nanya Signal HK Limited Independent Distributor Stock

NT5AD512M16H4-JR, SDRAM, from Nanya in Stock Hong Kong The NT5AD512M16H4-JR is a high-performance <strong>8Gb DDR4 SDRAM memory device</strong> from <strong>Nanya Technology</strong>, designed to deliver r

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Part Number	NT5AD512M16H4-JR
Manufacturer	Nanya
Description	The NT5AD512M16H4-JR is a high-performance 8Gb DDR4 SDRAM memory device from Nanya Technology, designed to deliver reliable, high-speed memory performance for computing, networking, telecommunications, industrial, and embedded applications. Utilizing advanced DDR4 technology, the device provides increased bandwidth, improved signal integrity, and enhanced power efficiency for modern digital systems. Organized as 512M x 16, the NT5AD512M16H4-JR offers a total memory density of 8Gb and supports data transfer rates up to 3200Mbps. Its high-speed architecture enables efficient processing of memory-intensive applications while improving overall system responsiveness and throughput. Operating from a low 1.2V supply voltage, the device significantly reduces power consumption compared to earlier memory generations. This low-voltage operation helps minimize heat generation and supports energy-efficient system designs in both embedded and enterprise applications. The DDR4 architecture incorporates advanced features such as bank group architecture, 8n prefetch operation, on-die termination (ODT), CRC error detection, ZQ calibration, and data bus inversion (DBI). These technologies improve signal quality, enhance reliability, and support stable operation at high data rates. Designed for high-speed synchronous operation, the NT5AD512M16H4-JR transfers data on both rising and falling clock edges, maximizing memory bandwidth while maintaining precise timing control. The architecture is optimized to support demanding workloads in networking, storage, and computing platforms. Packaged in a compact 96-ball FBGA package, the device enables high-density PCB layouts while providing excellent electrical and thermal performance. The package design supports automated assembly and integration into space-constrained electronic products. Built for dependable long-term operation, the memory device incorporates advanced refresh management, timing control, and signal optimization mechanisms to ensure stable performance under continuous operation and demanding environmental conditions. The NT5AD512M16H4-JR is widely used in servers, networking equipment, telecommunications infrastructure, industrial computers, embedded systems, storage controllers, edge computing devices, communication platforms, DDR4 memory modules, consumer electronics, and high-performance digital applications requiring fast, reliable, and energy-efficient memory performance.
Product Group	SDRAM
MOQ	2000 pcs
SPQ	2000 pcs
Figure/Case	96-Ball FBGA
Package	T&R Pack
PDF	PDF Datasheet
Ship From	Hong Kong
Shipment Way	DHL / Fedex / TNT / UPS / Others
Delivery Term	Ex-Works
Send RFQ	sales@signalhk.com

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