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AD9245BCPZ-20 / The AD9245BCPZ-20 is a high-performance <strong>14-bit analog-to-digital converter (ADC)</strong> developed by <strong>Analog Devices</strong>, designed for high-speed data acquisition and signal processing applications. It offers a sampling rate of up to <strong>20 MSPS (mega samples per second)</strong>, enabling accurate conversion of fast-changing analog signals into digital data. <br><br>The device is built using a <strong>multistage differential pipelined architecture</strong> with integrated error correction logic, ensuring high accuracy and no missing codes across the full operating temperature range. <br><br>It features a <strong>single-channel input</strong> supporting both <strong>differential and single-ended configurations</strong>, providing flexibility for various analog front-end designs. The integrated <strong>sample-and-hold amplifier and on-chip reference</strong> simplify system implementation and reduce external component requirements. <br><br>The AD9245BCPZ-20 operates from a <strong>single 3V supply (2.7V to 3.6V)</strong> and delivers excellent dynamic performance with high signal-to-noise ratio and spurious-free dynamic range, making it suitable for precision applications. <br><br>It provides a <strong>parallel data output interface</strong> with selectable output formats such as offset binary or two’s complement, allowing easy integration with DSPs, FPGAs, and microcontrollers. <br><br>Housed in a compact <strong>32-pin LFCSP surface-mount package</strong>, the device is optimized for high-density PCB layouts while maintaining strong electrical and thermal performance. <br><br>The <strong>AD9245BCPZ-20</strong> is widely used in <strong>medical imaging systems, communication receivers, spectrum analyzers, industrial measurement equipment, and high-speed data acquisition systems</strong>, where precise and reliable analog-to-digital conversion is essential.
AD9245BCPZ-20

Description: The AD9245BCPZ-20 is a high-performance 14-bit analog-to-digital converter (ADC) ...
Package: T&R | MOQ: 490 | MPQ: 490

MAX5222EKA+T / The MAX5222EKA+T is a compact and efficient <strong>dual 8-bit digital-to-analog converter (DAC)</strong> developed by <strong>Analog Devices (Maxim Integrated)</strong>, designed for precision voltage output generation in embedded and industrial systems. It integrates <strong>two buffered voltage-output DAC channels</strong> within a small footprint, enabling flexible analog signal control. <br><br>The device operates from a single <strong>2.7V to 5.5V supply voltage</strong>, making it compatible with both low-voltage and standard logic systems. It utilizes an <strong>R-2R ladder architecture</strong> to provide stable and accurate analog output signals. <br><br>The MAX5222EKA+T features a <strong>high-speed 3-wire serial interface</strong> compatible with <strong>SPI, QSPI, and MICROWIRE standards</strong>, supporting clock rates up to approximately <strong>25MHz</strong> for fast data transfer and real-time control. <br><br>Designed for low power operation, the device consumes less than <strong>1mA during normal operation</strong> and drops to <strong>below 1µA in shutdown mode</strong>, making it ideal for battery-powered and energy-sensitive applications. <br><br>The DAC outputs are capable of <strong>sourcing and sinking current up to 1mA</strong> and can swing close to both supply rails, ensuring flexible analog output performance. It also supports <strong>programmable shutdown functionality</strong> to further optimize system power consumption. <br><br>Encased in a compact <strong>8-pin SOT-23 surface-mount package</strong>, the MAX5222EKA+T is optimized for space-constrained PCB layouts while maintaining reliable performance. <br><br>The <strong>MAX5222EKA+T</strong> is widely used in <strong>programmable voltage sources, gain and offset adjustment circuits, power amplifier bias control, VCO tuning, and data acquisition systems</strong>, where compact size and low-power DAC functionality are required.
MAX5222EKA+T

Description: The MAX5222EKA+T is a compact and efficient dual 8-bit digital-to-analog converter ...
Package: T&R | MOQ: 2500 | MPQ: 2500

MAX810LEUR T / The MAX810LEUR+T is a compact and highly reliable <strong>voltage supervisor (reset IC)</strong> developed by <strong>Analog Devices (Maxim Integrated)</strong>, designed to monitor system supply voltage and ensure proper initialization of microprocessors and digital systems. It supervises a single voltage rail and provides a reset signal when the supply voltage falls below a defined threshold. <br><br>The device features a precise <strong>reset threshold of approximately 4.63V</strong>, making it ideal for <strong>5V-powered systems</strong>. When the supply voltage drops below this level, the IC asserts a reset signal to prevent erratic system behavior and code execution errors. <br><br>The MAX810LEUR+T provides an <strong>active-high push-pull reset output</strong>, ensuring strong drive capability without requiring external pull-up resistors. It maintains the reset state for a minimum of <strong>140ms after VCC recovers</strong>, allowing sufficient time for system stabilization before normal operation resumes. <br><br>This supervisor IC operates over a wide supply range and is optimized for low power consumption, making it suitable for both standard and energy-sensitive applications. It also offers <strong>fast response to voltage drops (within microseconds)</strong>, ensuring immediate system protection during brownout or power-down conditions. <br><br>Encased in a small <strong>SOT-23-3 surface-mount package</strong>, the MAX810LEUR+T is ideal for compact PCB designs and high-density applications. It requires <strong>no external components</strong>, simplifying circuit design and reducing overall system cost. <br><br>The <strong>MAX810LEUR+T</strong> is widely used in <strong>microcontroller-based systems, embedded devices, industrial control systems, communication equipment, and power management circuits</strong>, where reliable power-on reset and voltage monitoring are essential.
MAX810LEUR T

Description: The MAX810LEUR+T is a compact and highly reliable voltage supervisor (reset IC) ...
Package: T&R | MOQ: 2500 | MPQ: 2500

MB90F543GPF-G / The MB90F543GPF-G is a high-performance <strong>16-bit microcontroller (MCU)</strong> based on the <strong>F²MC-16LX CPU core</strong>, originally developed by <strong>Fujitsu</strong> and later supported by Cypress/Infineon, designed for automotive and industrial embedded control applications. It integrates <strong>128KB Flash program memory and 6KB RAM</strong>, providing sufficient resources for complex control algorithms and communication tasks. <br><br>The device operates at clock speeds up to approximately <strong>16 MHz</strong> and features a <strong>32-bit accumulator architecture</strong>, enabling efficient processing of long-word data and improved computational performance. <br><br>A key feature of the MB90F543GPF-G is its integrated <strong>FULL-CAN interface (CAN 2.0A/2.0B compliant)</strong>, allowing reliable communication in automotive and industrial networks. It supports flexible message buffering and advanced CAN functionality beyond standard implementations. <br><br>The MCU includes a wide range of peripherals such as <strong>8/10-bit A/D converters, UART (SCI), serial I/O interfaces, and multiple 8/16-bit timers</strong>, enabling versatile system integration and real-time control capabilities. <br><br>It operates within a supply voltage range of <strong>4.5V to 5.5V</strong> and supports up to <strong>81 general-purpose I/O pins</strong>, making it suitable for complex embedded designs requiring extensive connectivity. <br><br>Encased in a <strong>100-pin QFP surface-mount package</strong>, the MB90F543GPF-G provides high I/O density and is optimized for robust PCB designs in demanding environments. <br><br>The <strong>MB90F543GPF-G</strong> is widely used in <strong>automotive control units, industrial automation systems, CAN-based communication networks, and embedded control applications</strong>, where reliable real-time processing and integrated communication capabilities are essential.
MB90F543GPF-G

Description: The MB90F543GPF-G is a high-performance 16-bit microcontroller (MCU) base ...
Package: TRAY | MOQ: 360 | MPQ: 90

EPM7160SLI84-10 / The EPM7160SLI84-10 is a high-performance <strong>complex programmable logic device (CPLD)</strong> from <strong>Altera (now Intel)</strong>, belonging to the widely used <strong>MAX® 7000S family</strong>. It provides <strong>160 macrocells and approximately 3200 usable gates</strong>, enabling implementation of complex digital logic functions in embedded and industrial systems. <br><br>The device features <strong>in-system programmability (ISP)</strong> via a standard JTAG interface, allowing designers to configure and update logic without removing the component from the PCB. It operates with a propagation delay of approximately <strong>10 ns</strong>, supporting high-speed logic operations. <br><br>Built using EEPROM-based architecture, the EPM7160SLI84-10 offers <strong>non-volatile configuration storage</strong>, ensuring that logic is retained even when power is removed. It supports a supply voltage range of <strong>4.5V to 5.5V</strong>, making it compatible with standard 5V systems. <br><br>The device includes up to <strong>64 user I/O pins</strong> and multiple logic array blocks, enabling flexible interfacing and complex logic integration. It is optimized for deterministic timing and predictable performance in control and interface applications. <br><br>Encased in a durable <strong>84-pin PLCC surface-mount package</strong>, the device is suitable for industrial environments and high-reliability applications. It operates across a temperature range of <strong>-40°C to +85°C</strong>, ensuring stable performance under varying conditions. <br><br>The <strong>EPM7160SLI84-10</strong> is widely used in <strong>industrial control systems, interface bridging, glue logic, state machines, and embedded digital designs</strong>, where reliable programmable logic and long-term stability are required.
EPM7160SLI84-10

Description: The EPM7160SLI84-10 is a high-performance complex programmable logic device (CPLD) ...
Package: TRAY | MOQ: 45 | MPQ: 15

LTC1480IS8#TRPBF / The LTC1480IS8#TRPBF is an ultra-low power <strong>RS-485/RS-422 differential transceiver</strong> developed by <strong>Analog Devices (formerly Linear Technology)</strong>, designed for reliable data communication in industrial and embedded systems. It integrates <strong>one driver and one receiver (1/1 configuration)</strong> supporting <strong>half-duplex communication</strong> over differential bus lines. <br><br>The device operates from a single <strong>3.0V to 3.6V supply (typ. 3.3V)</strong> and delivers high-speed data transmission up to approximately <strong>2.5 Mbps</strong>, making it suitable for both low-power and moderate-speed communication networks. <br><br>Designed with a <strong>wide common-mode input range of -7V to +12V</strong>, the LTC1480 ensures robust communication even in electrically noisy environments and allows reliable operation with ground potential differences between connected devices. <br><br>The transceiver features <strong>low power consumption</strong>, with typical operating current around <strong>300µA</strong> and shutdown current as low as <strong>1µA</strong>, making it ideal for battery-powered applications. <br><br>It includes advanced protection and reliability features such as <strong>thermal shutdown, current limiting, fail-safe receiver operation, and high-impedance three-state outputs</strong>, ensuring safe operation during fault conditions and bus contention scenarios. <br><br>The LTC1480IS8#TRPBF is packaged in a compact <strong>8-pin SOIC surface-mount package</strong>, enabling efficient PCB layout in space-constrained designs while maintaining strong electrical performance. <br><br>The <strong>LTC1480IS8#TRPBF</strong> is widely used in <strong>industrial automation, RS-485 communication networks, fieldbus systems, battery-powered devices, and embedded control systems</strong>, where low power consumption and robust differential communication are essential.
LTC1480IS8#TRPBF

Description: The LTC1480IS8#TRPBF is an ultra-low power RS-485/RS-422 differential transceiver ...
Package: TUBE | MOQ: 1000 | MPQ: 100

LT1616ES6#PBF / The LT1616ES6#PBF is a compact and efficient <strong>step-down (buck) DC-DC switching regulator</strong> developed by <strong>Analog Devices (formerly Linear Technology)</strong>, designed for power management in embedded and portable systems. It integrates an internal power switch capable of delivering up to <strong>600mA output current</strong>, enabling efficient voltage conversion in space-constrained designs. <br><br>The device operates over a wide <strong>input voltage range of 3.6V to 25V</strong>, making it suitable for applications powered by batteries, industrial rails, or unregulated sources. It provides an <strong>adjustable output voltage starting from approximately 1.25V</strong>, allowing flexible power design across various systems. <br><br>Featuring a <strong>fixed switching frequency of 1.4MHz</strong>, the LT1616ES6#PBF allows the use of small external inductors and capacitors, reducing overall solution size and cost. Its <strong>current-mode PWM architecture</strong> ensures stable operation and low output ripple when used with ceramic capacitors. <br><br>The regulator includes <strong>internal compensation</strong>, minimizing the need for external components and simplifying circuit design. It also provides <strong>current limiting, thermal protection, and low shutdown current (<1µA)</strong>, improving system reliability and power efficiency. <br><br>Housed in a small <strong>6-pin SOT-23 surface-mount package</strong>, the device is optimized for high-density PCB layouts while maintaining strong electrical performance. <br><br>The <strong>LT1616ES6#PBF</strong> is widely used in <strong>portable electronics, industrial power systems, distributed power regulation, battery-powered devices, and embedded applications</strong>, where compact, efficient, and reliable step-down voltage conversion is required.
LT1616ES6#PBF

Description: The LT1616ES6#PBF is a compact and efficient step-down (buck) DC-DC switching regu ...
Package: T&R | MOQ: 3000 | MPQ: 3000

PESD24VV1BAX / The PESD24VV1BAX is a compact and high-reliability <strong>bidirectional TVS (transient voltage suppressor) diode</strong> developed by <strong>Nexperia</strong>, designed to protect sensitive electronic circuits against electrostatic discharge (ESD) and transient voltage spikes. It provides a <strong>reverse stand-off voltage of 24V</strong>, making it suitable for protecting low-speed data lines and power interfaces. <br><br>The device features a <strong>low clamping voltage (approximately 33V–42V)</strong> and can handle peak pulse currents up to <strong>3.5A</strong>, ensuring effective suppression of voltage surges and fast transient events. <br><br>With a <strong>bidirectional single-channel configuration</strong>, the PESD24VV1BAX provides symmetrical protection for signals that swing in both directions, making it ideal for communication lines and interface protection. <br><br>The device offers <strong>very low capacitance (~14pF)</strong>, minimizing signal distortion and allowing use in high-speed or sensitive signal paths. It also provides robust <strong>ESD protection up to 30kV (IEC 61000-4-2)</strong>, ensuring reliability in harsh environments. <br><br>Designed for demanding conditions, it operates over a wide temperature range of <strong>-55°C to +150°C</strong> and is <strong>AEC-Q101 qualified</strong>, making it suitable for automotive and industrial applications. <br><br>Housed in a compact <strong>SOD-323 surface-mount package</strong>, the PESD24VV1BAX enables high-density PCB layouts while maintaining strong electrical performance. <br><br>The <strong>PESD24VV1BAX</strong> is widely used in <strong>telecom interfaces, automotive electronics, industrial control systems, and consumer devices</strong>, where reliable ESD and surge protection is critical.
PESD24VV1BAX

Description: The PESD24VV1BAX is a compact and high-reliability bidirectional TVS (transient vo ...
Package: T&R | MOQ: 3000 | MPQ: 3000

MT40A1G16RC-062E:B / The MT40A1G16RC-062E:B is a high-density <strong>16Gb DDR4 SDRAM</strong> developed by <strong>Micron Technology</strong>, designed for high-performance computing, networking, and embedded applications requiring fast and reliable volatile memory. It features a memory organization of <strong>1G × 16 bits</strong>, providing efficient parallel data transfer and high bandwidth performance. <br><br>The device operates using an advanced <strong>DDR4 architecture</strong>, enabling data transfer on both rising and falling edges of the clock signal. It supports data rates up to approximately <strong>3200 MT/s</strong> with a clock frequency around <strong>1.6 GHz</strong>, ensuring high-speed operation for demanding systems. <br><br>Internally, the memory utilizes a <strong>multi-bank structure with bank group architecture and 8n prefetch</strong>, allowing parallel operations and improved memory efficiency. It supports <strong>programmable burst modes, CAS latency options, and advanced timing controls</strong>, providing flexibility for system-level optimization. <br><br>The MT40A1G16RC-062E:B operates at a low <strong>1.2V supply voltage (typical)</strong>, improving power efficiency compared to previous memory generations. It also includes features such as <strong>auto-refresh, self-refresh, on-die termination (ODT), and internal Vref generation</strong> to ensure stable operation and signal integrity. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the device is optimized for high-density PCB layouts while maintaining strong electrical and thermal performance. <br><br>The <strong>MT40A1G16RC-062E:B</strong> is widely used in <strong>industrial computing, networking equipment, embedded systems, servers, and high-performance digital applications</strong>, where high-speed and high-capacity DDR4 memory is essential.
MT40A1G16RC-062E:B

Description: The MT40A1G16RC-062E:B is a high-density 16Gb DDR4 SDRAM developed by ...
Package: T&R | MOQ: 1000 | MPQ: 1000

SD103ASDM-7-F / The SD103ASDM-7-F is a compact and efficient <strong>Schottky barrier diode array</strong> manufactured by <strong>Diodes Incorporated</strong>, designed for high-speed switching and signal processing applications. It features a <strong>dual pair series configuration</strong>, enabling flexible circuit design in compact layouts. <br><br>The device supports a <strong>maximum repetitive reverse voltage of 40V</strong> and an average forward current of up to <strong>350mA</strong>, providing reliable performance in low-power and medium-speed circuits. <br><br>Thanks to its <strong>low forward voltage drop (approximately 0.6V)</strong>, the diode minimizes power loss and improves efficiency, making it suitable for sensitive analog and RF applications. <br><br>The SD103ASDM-7-F offers <strong>fast switching characteristics with reverse recovery time around 10ns</strong>, allowing accurate signal handling in high-frequency environments. <br><br>Built with <strong>guard ring construction</strong>, the device provides enhanced protection against transient events and improved reliability during operation. <br><br>It is housed in a <strong>compact SOT-26 surface-mount package</strong>, enabling high-density PCB designs while maintaining strong thermal and electrical performance. <br><br>The <strong>SD103ASDM-7-F</strong> is widely used in <strong>RF detection circuits, signal switching, voltage clamping, protection circuits, and general-purpose high-speed applications</strong>, where low capacitance and fast response are critical.
SD103ASDM-7-F

Description: The SD103ASDM-7-F is a compact and efficient Schottky barrier diode array ...
Package: T&R | MOQ: 3000 | MPQ: 3000

ZXTC2063E6TA / The ZXTC2063E6TA is a compact and high-performance <strong>dual bipolar transistor array (NPN + PNP)</strong> developed by <strong>Diodes Incorporated</strong>, designed for switching, amplification, and driver applications in space-constrained electronic designs. It integrates <strong>one NPN and one PNP transistor</strong> in a single package, enabling complementary circuit configurations. <br><br>The device supports a <strong>collector-emitter voltage of up to 40V</strong> and provides high current capability with <strong>collector currents up to 3.5A (NPN) and 3A (PNP)</strong>, making it suitable for medium-power applications. <br><br>It features a <strong>low saturation voltage (VCE(sat))</strong>, which helps reduce power loss and improve efficiency in switching applications. The transistor array also offers <strong>high DC current gain (hFE)</strong>, ensuring effective signal amplification and drive capability. <br><br>With a <strong>fast transition frequency (up to ~190MHz for NPN and ~270MHz for PNP)</strong>, the ZXTC2063E6TA is suitable for high-speed switching and signal processing circuits. <br><br>The device is housed in a compact <strong>SOT-26 surface-mount package</strong>, enabling high-density PCB layouts and efficient thermal performance. It operates across a wide temperature range of <strong>-55°C to +150°C</strong>, making it suitable for demanding industrial environments. <br><br>The <strong>ZXTC2063E6TA</strong> is widely used in <strong>MOSFET and IGBT gate driving, motor control circuits, DC-DC converters, and general-purpose switching applications</strong>, where compact size and high performance are required.
ZXTC2063E6TA

Description: The ZXTC2063E6TA is a compact and high-performance dual bipolar transistor array ( ...
Package: T&R | MOQ: 3000 | MPQ: 3000

THVD1419DR / The THVD1419DR is a robust <strong>RS-485 transceiver</strong> developed by <strong>Texas Instruments</strong>, designed for reliable serial communication in industrial and embedded systems. It supports <strong>half-duplex data transmission</strong> with one driver and one receiver, enabling efficient multi-drop communication over long cable distances. <br><br>The device operates within a <strong>3.0V to 5.5V supply voltage range</strong>, allowing compatibility with both 3.3V and 5V logic systems. It provides a maximum data rate of approximately <strong>250 kbps</strong>, making it suitable for low-to-medium speed industrial communication networks. <br><br>The THVD1419DR integrates <strong>advanced surge and ESD protection</strong>, including up to <strong>±16 kV HBM ESD protection</strong> and IEC surge immunity, enhancing reliability in electrically noisy environments and reducing the need for external protection components. <br><br>It features a <strong>wide common-mode voltage range (±12V)</strong> and fault protection capability, ensuring stable communication even under harsh conditions. The device is compliant with the <strong>TIA/EIA-485A standard</strong>, enabling interoperability with standard RS-485 networks. <br><br>Designed for industrial use, the transceiver operates across an extended temperature range of <strong>-40°C to +125°C</strong>, making it suitable for demanding environments. It also supports up to <strong>256 nodes on the bus</strong>, allowing scalable network designs. <br><br>Encased in a compact <strong>SOIC-8 surface-mount package</strong>, the THVD1419DR enables space-efficient PCB layouts while maintaining strong electrical performance. <br><br>The <strong>THVD1419DR</strong> is widely used in <strong>industrial automation, building control systems, motor drives, fieldbus communication, and RS-485 networks</strong>, where reliable and noise-resistant data communication is essential.
THVD1419DR

Description: The THVD1419DR is a robust RS-485 transceiver developed by Texas ...
Package: T&R | MOQ: 2500 | MPQ: 2500

88E1112-C2-NNC1C000 / The 88E1112-C2-NNC1C000 is a high-performance <strong>Gigabit Ethernet transceiver (PHY)</strong> developed by <strong>Marvell Technology</strong>, designed for high-speed networking and communication systems. It is fully compliant with <strong>IEEE 802.3 standards</strong>, supporting data rates of <strong>10Mbps, 100Mbps, and 1000Mbps</strong> for flexible Ethernet connectivity. <br><br>The device integrates advanced mixed-signal processing technologies, including <strong>echo cancellation, equalization, and error correction</strong>, ensuring reliable data transmission even in noisy environments. It is optimized for robust performance with <strong>low power consumption</strong>. <br><br>The 88E1112 supports multiple interface standards such as <strong>SGMII (Serial Gigabit Media Independent Interface)</strong>, allowing seamless connection to Ethernet MACs, switches, and processors. It also supports various media types including <strong>1000BASE-T, 100BASE-TX, 10BASE-T, 1000BASE-X, and 100BASE-FX</strong>, enabling both copper and fiber applications. <br><br>Designed for high integration, the device includes all necessary physical layer functions to transmit and receive data over standard twisted-pair cables, reducing the need for external components and simplifying system design. <br><br>The IC is housed in a compact <strong>64-pin QFN package with exposed pad</strong>, offering excellent thermal performance and suitability for high-density PCB layouts. <br><br>The <strong>88E1112-C2-NNC1C000</strong> is widely used in <strong>network switches, routers, industrial Ethernet systems, media converters, and embedded networking devices</strong>, where reliable high-speed data communication is essential.
88E1112-C2-NNC1C000

Description: The 88E1112-C2-NNC1C000 is a high-performance Gigabit Ethernet transceiver (PHY) ...
Package: TRAY | MOQ: 260 | MPQ: 260

LFXP2-30E-5FN484I / The LFXP2-30E-5FN484I is a versatile <strong>field programmable gate array (FPGA)</strong> developed by <strong>Lattice Semiconductor</strong>, designed for low-power, high-performance programmable logic applications. It provides approximately <strong>30K logic elements (LUTs)</strong>, enabling flexible implementation of complex digital logic functions and system integration. <br><br>This device belongs to the <strong>LatticeXP2™ family</strong>, which combines non-volatile configuration memory with SRAM-based FPGA architecture, allowing instant-on operation without the need for an external configuration device. It supports <strong>in-system programmability</strong>, enabling design updates even after deployment. <br><br>The LFXP2-30E-5FN484I offers a wide range of embedded resources, including <strong>block RAM, distributed RAM, DSP blocks, and PLLs</strong>, making it suitable for signal processing, control logic, and communication interfaces. It also includes <strong>high-speed I/O interfaces</strong> supporting various standards for flexible connectivity. <br><br>Optimized for low power consumption, the device is ideal for applications where energy efficiency is critical. It operates across industrial temperature ranges and supports <strong>robust configuration security features</strong>, ensuring reliable system operation. <br><br>Housed in a <strong>484-ball FBGA surface-mount package</strong>, the FPGA provides high I/O density and is suitable for complex PCB designs requiring compact integration. <br><br>The <strong>LFXP2-30E-5FN484I</strong> is widely used in <strong>industrial automation, communications equipment, embedded control systems, consumer electronics, and interface bridging applications</strong>, where flexible, reconfigurable logic and low power operation are essential.
LFXP2-30E-5FN484I

Description: The LFXP2-30E-5FN484I is a versatile field programmable gate array (FPGA) ...
Package: TRAY | MOQ: 90 | MPQ: 90

SDINBDG4-16G-XI2 / The SDINBDG4-16G-XI2 is a high-reliability <strong>16GB embedded eMMC flash memory</strong> developed by <strong>SanDisk (Western Digital)</strong>, designed for industrial and embedded applications requiring stable and durable non-volatile storage. It integrates NAND flash memory and a controller in a single compact package, simplifying system design and improving data management efficiency. <br><br>This device is based on advanced <strong>MLC NAND flash technology</strong> and provides a fully managed storage solution with built-in <strong>error correction (ECC), wear leveling, and bad block management</strong>, ensuring long-term reliability and consistent performance. <br><br>The SDINBDG4-16G-XI2 supports the <strong>standard eMMC interface</strong>, enabling seamless communication with host processors through a high-speed parallel interface, making it suitable for embedded systems and industrial controllers. It operates within a supply voltage range of approximately <strong>2.7V to 3.6V</strong>, allowing compatibility with a wide range of digital platforms. <br><br>Designed for demanding environments, the device offers <strong>high endurance and reliability</strong>, making it ideal for continuous operation in industrial and IoT applications. It incorporates advanced firmware features that enhance data integrity and optimize performance under heavy workloads. <br><br>Housed in a compact <strong>FBGA surface-mount package</strong>, the SDINBDG4-16G-XI2 enables high-density PCB layouts while maintaining strong electrical and thermal performance. <br><br>The <strong>SDINBDG4-16G-XI2</strong> is widely used in <strong>industrial automation, IoT gateways, embedded computing systems, networking devices, surveillance equipment, and transportation systems</strong>, where reliable and efficient embedded storage is critical.
SDINBDG4-16G-XI2

Description: The SDINBDG4-16G-XI2 is a high-reliability 16GB embedded eMMC flash memory ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

H5TQ4G63AFR-PBC / The H5TQ4G63AFR-PBC is a high-performance <strong>4Gb DDR3 SDRAM</strong> developed by <strong>SK Hynix</strong>, designed for applications requiring high memory density and fast data throughput such as embedded systems, computing platforms, and networking equipment. It features a memory organization of <strong>256M × 16 bits</strong>, enabling efficient parallel data handling and optimized bandwidth performance. <br><br>The device operates using a <strong>DDR3 architecture</strong>, transferring data on both the rising and falling edges of the clock signal to achieve high-speed operation. It supports data rates up to approximately <strong>1600 MT/s</strong> depending on the speed grade, making it suitable for high-bandwidth memory applications. <br><br>Internally, the H5TQ4G63AFR-PBC utilizes a <strong>multi-bank structure with 8-bit prefetch and pipelined data paths</strong>, allowing concurrent operations and improved memory efficiency. It supports <strong>programmable burst lengths (BL4/BL8), CAS latency options, and additive latency</strong>, offering flexibility for various system designs. <br><br>The device operates at a nominal <strong>1.5V supply voltage</strong> and includes features such as <strong>on-chip DLL, differential clock inputs, auto-refresh, and self-refresh modes</strong>, ensuring reliable timing and data integrity across operating conditions. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the H5TQ4G63AFR-PBC is optimized for high-density PCB layouts while maintaining strong electrical and thermal performance. <br><br>The <strong>H5TQ4G63AFR-PBC</strong> is widely used in <strong>embedded computing, industrial systems, networking equipment, consumer electronics, and high-performance memory subsystems</strong>, where reliable and high-speed DDR3 memory is required.
H5TQ4G63AFR-PBC

Description: The H5TQ4G63AFR-PBC is a high-performance 4Gb DDR3 SDRAM developed by ...
Package: T&R | MOQ: 1000 | MPQ: 1000

PCF8566T/1,118 / The PCF8566T/1,118 is a versatile <strong>LCD segment driver IC</strong> developed by <strong>NXP Semiconductors</strong>, designed for controlling low multiplex LCD displays in a wide range of embedded applications. It supports up to <strong>96 display elements (segments)</strong> and can drive configurations such as <strong>12-digit 7-segment or 6-character displays</strong>, making it suitable for compact display systems. <br><br>The device communicates via a <strong>standard I2C interface</strong>, enabling easy integration with microcontrollers and reducing wiring complexity in system designs. It operates over a <strong>wide supply voltage range of 2.5V to 6V</strong>, allowing compatibility with both low-power and standard logic systems. <br><br>The PCF8566T/1,118 features a <strong>flexible multiplex driving capability (static, 1:2, 1:3, and 1:4 modes)</strong>, enabling efficient control of different LCD panel types while optimizing power consumption and display quality. <br><br>Designed for energy-efficient operation, the device consumes as little as <strong>~30 µA supply current</strong>, making it ideal for battery-powered applications and low-power embedded systems. <br><br>The IC includes an internal <strong>display RAM (24 × 4-bit)</strong> that directly maps to LCD segments, simplifying software control and enabling fast updates of display content. <br><br>Housed in a compact <strong>VSO-40 surface-mount package</strong>, the PCF8566T/1,118 is optimized for space-efficient PCB layouts while maintaining reliable performance. <br><br>The <strong>PCF8566T/1,118</strong> is widely used in <strong>industrial control panels, automotive dashboards, medical devices, and consumer electronics</strong>, where low-power and flexible LCD control solutions are required.
PCF8566T/1,118

Description: The PCF8566T/1,118 is a versatile LCD segment driver IC developed by ...
Package: T&R | MOQ: 500 | MPQ: 500

FT232RQ / The FT232RQ is a highly integrated <strong>USB to UART interface IC</strong> developed by <strong>FTDI</strong>, designed to simplify USB-to-serial communication in embedded and industrial systems. It provides a complete solution for converting USB data streams into asynchronous serial (UART) communication without requiring external USB protocol firmware. <br><br>The device supports <strong>full-speed USB 2.0 operation</strong> and enables data transfer rates from <strong>300 baud up to 3 Mbaud</strong>, making it suitable for a wide range of communication applications. <br><br>One of its key advantages is the <strong>high level of integration</strong>, including an internal EEPROM, clock generator, and USB termination resistors, significantly reducing the need for external components and simplifying PCB design. <br><br>The FT232RQ features a <strong>standard UART interface</strong> supporting multiple data formats (7/8 data bits, parity options, and stop bits) along with <strong>hardware and software flow control</strong>, enabling flexible system integration. <br><br>It also includes advanced capabilities such as <strong>bit-bang mode, configurable CBUS pins, and an integrated clock output (6MHz to 48MHz)</strong>, allowing it to drive external logic or microcontrollers directly. <br><br>Operating within a <strong>3.3V to 5.25V supply range</strong>, the device is compatible with a wide variety of digital systems and supports operation across industrial temperature ranges. <br><br>Packaged in a compact <strong>QFN-32 surface-mount form factor</strong>, the FT232RQ is optimized for space-constrained designs while maintaining reliable performance. <br><br>The <strong>FT232RQ</strong> is widely used in <strong>USB-to-serial converters, microcontroller programming interfaces, industrial communication systems, debugging tools, and embedded development platforms</strong>, where simple and reliable USB connectivity is required.
FT232RQ

Description: The FT232RQ is a highly integrated USB to UART interface IC developed by ...
Package: T&R | MOQ: 2500 | MPQ: 2500

1N5711W-7-F / The 1N5711W-7-F is a high-speed <strong>Schottky barrier diode</strong> manufactured by <strong>Diodes Incorporated</strong>, optimized for RF, detection, and fast switching applications. It is designed with a low forward voltage drop and ultra-fast switching characteristics, making it ideal for high-frequency signal processing. <br><br>The device supports a <strong>maximum repetitive reverse voltage of 70V</strong> and a forward current of up to <strong>15mA</strong>, providing reliable performance in low-power circuits. Its <strong>low forward voltage (approximately 1V max)</strong> helps reduce power losses and improves efficiency in sensitive analog and RF designs. <br><br>With a very low junction capacitance of approximately <strong>2pF</strong>, the 1N5711W-7-F is well-suited for <strong>high-frequency and RF applications</strong>, enabling minimal signal distortion and fast response times. <br><br>The diode features a <strong>fast switching speed (nanosecond range)</strong> and low reverse recovery characteristics, making it effective for detection, mixing, and high-speed rectification circuits. It also incorporates <strong>guard ring construction</strong> for enhanced transient protection and reliability. <br><br>Housed in a compact <strong>SOD-123 surface-mount package</strong>, it is suitable for automated assembly and high-density PCB layouts while maintaining strong thermal and electrical performance. <br><br>The <strong>1N5711W-7-F</strong> is widely used in <strong>RF detectors, signal demodulation circuits, high-frequency rectifiers, communication systems, and general-purpose high-speed switching applications</strong>, where low capacitance and fast response are critical.
1N5711W-7-F

Description: The 1N5711W-7-F is a high-speed Schottky barrier diode manufactured by ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BSC112N06LDATMA1 / The BSC112N06LDATMA1 is a high-performance <strong>dual N-channel power MOSFET</strong> from <strong>Infineon Technologies</strong>, designed for efficient power switching and management in modern electronic systems. It features a <strong>60V drain-to-source voltage</strong> and supports a continuous drain current of up to <strong>20A per channel</strong>, making it suitable for a wide range of medium-voltage applications. <br><br>The device is built using advanced <strong>OptiMOS™ technology</strong>, delivering a very low <strong>RDS(on) of approximately 11.2 mΩ</strong>, which minimizes conduction losses and improves overall system efficiency. <br><br>Configured as a <strong>dual MOSFET (2 × N-channel)</strong>, it enables compact circuit designs and reduces PCB footprint, making it ideal for synchronous rectification and DC-DC converter topologies. <br><br>The BSC112N06LDATMA1 supports a <strong>wide operating temperature range from -55°C to +175°C</strong> and features a <strong>logic-level gate drive</strong>, allowing efficient operation even at lower gate voltages. <br><br>With a <strong>maximum power dissipation of approximately 65W</strong> and optimized switching characteristics including low gate charge (~55nC), the device is well-suited for high-frequency and high-efficiency designs. <br><br>Housed in a compact <strong>PG-TDSON-8 (SuperSO8) surface-mount package</strong>, it provides excellent thermal performance and high power density for space-constrained applications. <br><br>The <strong>BSC112N06LDATMA1</strong> is widely used in <strong>DC-DC converters, power supplies, motor control systems, synchronous rectification circuits, and industrial automation applications</strong>, where high efficiency and compact design are critical.
BSC112N06LDATMA1

Description: The BSC112N06LDATMA1 is a high-performance dual N-channel power MOSFET fr ...
Package: T&R | MOQ: 5000 | MPQ: 5000

BSC155N06NDATMA1 / The BSC155N06NDATMA1 is a high-efficiency <strong>dual N-channel power MOSFET</strong> developed by <strong>Infineon Technologies</strong>, designed for switching and power management applications requiring high current capability and low conduction losses. It features a <strong>60V drain-to-source voltage</strong> and a continuous drain current of up to <strong>20A per channel</strong>, making it suitable for medium-voltage power designs. <br><br>The device is built using advanced <strong>OptiMOS™ technology</strong>, providing a very low <strong>RDS(on) of approximately 15.5 mΩ</strong>, which helps reduce power dissipation and improve overall system efficiency. <br><br>Configured as a <strong>dual MOSFET (2 × N-channel)</strong>, the BSC155N06NDATMA1 enables compact circuit designs by integrating two transistors in a single package, optimizing board space and simplifying layout in synchronous switching applications. <br><br>The component supports a <strong>wide operating temperature range from -55°C to +175°C</strong> and offers fast switching performance with low gate charge (<strong>~29nC</strong>), making it ideal for high-frequency switching converters and motor control systems. <br><br>Housed in a compact <strong>PG-TDSON-8 (SuperSO8) surface-mount package</strong>, it provides excellent thermal performance and high power density, enabling efficient heat dissipation in compact designs. <br><br>The <strong>BSC155N06NDATMA1</strong> is widely used in <strong>DC-DC converters, synchronous rectification, motor drives, power supplies, and industrial automation systems</strong>, where high efficiency, reliability, and compact footprint are critical.
BSC155N06NDATMA1

Description: The BSC155N06NDATMA1 is a high-efficiency dual N-channel power MOSFET dev ...
Package: T&R | MOQ: 5000 | MPQ: 5000

GJM1555C1H1R8WB01D / The GJM1555C1H1R8WB01D is a high-precision <strong>1.8pF multilayer ceramic capacitor (MLCC)</strong> manufactured by <strong>Murata</strong>, specifically designed for high-frequency and RF applications requiring low loss and stable capacitance characteristics. It features a <strong>C0G (NP0) dielectric</strong>, ensuring excellent temperature stability and minimal capacitance variation over a wide operating range. <br><br>This capacitor is rated at <strong>50V DC</strong> with a tight tolerance of <strong>±0.05pF</strong>, making it ideal for precision circuits such as RF matching networks and high-frequency filters. The C0G dielectric provides a near-zero temperature coefficient, maintaining stable electrical performance across temperatures from <strong>-55°C to +125°C</strong>. <br><br>Designed for demanding RF environments, the GJM1555C1H1R8WB01D offers <strong>high Q factor and low ESR characteristics</strong>, minimizing signal loss and improving overall circuit efficiency in high-frequency operation. It is well-suited for applications operating in microwave and RF frequency ranges. <br><br>The device is housed in a compact <strong>0402 (1.0mm × 0.5mm) surface-mount package</strong>, enabling high-density PCB layouts while maintaining reliable performance in miniaturized electronic designs. <br><br>The <strong>GJM1555C1H1R8WB01D</strong> is widely used in <strong>RF modules, wireless communication systems, high-frequency filters, impedance matching circuits, and microwave applications</strong>, where precision, stability, and low loss are critical.
GJM1555C1H1R8WB01D

Description: The GJM1555C1H1R8WB01D is a high-precision 1.8pF multilayer ceramic capacitor (MLC ...
Package: T&R | MOQ: 10000 | MPQ: 10000

GRM31CC81E226KE11L / The GRM31CC81E226KE11L is a compact and high-capacity <strong>22µF multilayer ceramic capacitor (MLCC)</strong> manufactured by <strong>Murata</strong>, designed for general-purpose applications requiring stable capacitance in a small surface-mount form factor. It is rated at <strong>25V DC</strong> with a tolerance of <strong>±10%</strong>, making it suitable for a wide range of power and signal filtering applications. <br><br>The capacitor utilizes an <strong>X6S dielectric material</strong>, which provides stable performance across a temperature range of <strong>-55°C to +105°C</strong>, ensuring reliable operation in both industrial and consumer environments. It is optimized for applications where moderate capacitance stability and high volumetric efficiency are required. <br><br>With a standard <strong>1206 (3.2mm × 1.6mm) SMD package</strong>, the GRM31CC81E226KE11L offers a balance between size and capacitance, enabling efficient PCB layout in compact electronic designs. <br><br>The device is built using a <strong>stacked multilayer ceramic structure</strong>, allowing high capacitance values in a small footprint while maintaining low ESR and good frequency characteristics. It is suitable for decoupling, smoothing, and bulk capacitance applications in digital and analog circuits. <br><br>The GRM31CC81E226KE11L is widely used in <strong>power supply circuits, DC-DC converters, consumer electronics, industrial equipment, and embedded systems</strong>, where reliable and space-efficient passive components are essential.
GRM31CC81E226KE11L

Description: The GRM31CC81E226KE11L is a compact and high-capacity 22µF multilayer ceramic cap ...
Package: T&R | MOQ: 2000 | MPQ: 2000

HOA0901-011 / The HOA0901-011 is a compact <strong>infrared transmissive optical sensor (photointerrupter)</strong> developed by <strong>Honeywell</strong>, designed for precise motion detection and position sensing in encoder-based systems. It integrates an <strong>infrared emitting diode (IRED) and a dual-channel photodetector IC</strong> within a single slotted housing, enabling accurate detection of objects passing through the sensing gap. <br><br>The device operates using a <strong>through-beam sensing method</strong>, where the IR beam is interrupted by a moving object such as a code wheel or strip, generating output signals used to determine speed and direction. It features a slot width of approximately <strong>3.2 mm</strong>, making it suitable for compact encoder designs. <br><br>The HOA0901-011 incorporates a <strong>dual-channel photodiode array with integrated amplifiers and Schmitt trigger outputs</strong>, providing clean digital signals with <strong>direct TTL interface compatibility</strong>. The outputs are <strong>NPN open-collector with internal pull-up resistors</strong>, simplifying system integration. <br><br>Designed for high-speed applications, the sensor offers a <strong>fast response time of approximately 100 ns</strong>, enabling accurate detection in dynamic motion systems. It operates within a <strong>4.5V to 5.5V supply range</strong> and supports stable performance across a temperature range of <strong>-40°C to +70°C</strong>. <br><br>The device is housed in a durable <strong>through-hole PCB mount package</strong>, ensuring reliable mechanical stability in industrial environments. Its internal design also includes <strong>temperature compensation circuitry</strong> to maintain consistent optical performance. <br><br>The <strong>HOA0901-011</strong> is widely used in <strong>rotary and linear encoders, industrial automation systems, optical mice, motor control, and position sensing applications</strong>, where accurate and high-speed optical detection is required.
HOA0901-011

Description: The HOA0901-011 is a compact infrared transmissive optical sensor (photointerrupte ...
Package: BULK | MOQ: 500 | MPQ: 100

HLC1395-001 / The HLC1395-001 is a compact <strong>infrared reflective optical sensor</strong> developed by <strong>Honeywell</strong>, designed for short-range object detection and position sensing applications. It integrates an <strong>infrared emitting diode (IR LED) and a phototransistor</strong> in a single package, enabling efficient detection of reflected light from nearby surfaces. <br><br>The sensor operates on a <strong>diffuse reflective principle</strong>, where emitted infrared light is reflected back from a target and detected by the phototransistor, producing an output proportional to the reflected intensity. It is optimized for short sensing distances of approximately <strong>1.0 mm</strong>, making it ideal for precise proximity detection. <br><br>The HLC1395-001 provides a <strong>fast response time (typically around 15 µs)</strong>, allowing accurate detection in high-speed switching and motion sensing applications. Its <strong>phototransistor output</strong> enables easy interfacing with analog or digital processing circuits. <br><br>The device supports a <strong>collector-emitter voltage up to approximately 30V</strong> and is designed for stable operation across a wide range of environmental conditions. Its <strong>through-hole PCB mounting design</strong> ensures secure placement and reliable performance in industrial and embedded systems. <br><br>With its integrated structure and compact footprint, the HLC1395-001 simplifies optical sensing design by reducing the need for external components while maintaining consistent detection performance. <br><br>The <strong>HLC1395-001</strong> is widely used in <strong>industrial automation, position sensing, object detection, paper detection systems, and consumer electronics</strong>, where reliable short-range optical sensing is required.
HLC1395-001

Description: The HLC1395-001 is a compact infrared reflective optical sensor developed ...
Package: BULK | MOQ: 500 | MPQ: 500

AD7476ARTZ-REEL7 / The AD7476ARTZ-REEL7 is a compact and efficient <strong>12-bit analog-to-digital converter (ADC)</strong> from <strong>Analog Devices</strong>, designed for high-speed and low-power data acquisition applications. It utilizes a <strong>successive approximation register (SAR) architecture</strong>, enabling accurate and fast signal conversion. <br><br>The device supports a sampling rate of up to <strong>1 MSPS (million samples per second)</strong>, making it suitable for real-time signal processing and control systems. It features a <strong>serial SPI-compatible interface</strong>, allowing simple and efficient communication with microcontrollers, DSPs, and FPGA-based systems. <br><br>The AD7476ARTZ-REEL7 operates over a <strong>wide supply voltage range (2.35V to 5.25V)</strong>, providing flexibility for various system designs. Its <strong>low power consumption</strong> makes it ideal for portable and energy-sensitive applications. <br><br>With an internal track-and-hold amplifier and optimized design, the device ensures <strong>high accuracy, low noise, and excellent linearity</strong> during conversion. It requires minimal external components, simplifying circuit design and reducing overall system cost. <br><br>Housed in a small <strong>SOT-23-6 surface-mount package</strong>, the AD7476ARTZ-REEL7 is well-suited for space-constrained PCB layouts and high-density designs. <br><br>The <strong>AD7476ARTZ-REEL7</strong> is widely used in <strong>industrial automation, data acquisition systems, medical instruments, battery-powered devices, and embedded control applications</strong>, where fast, accurate, and low-power analog-to-digital conversion is required.
AD7476ARTZ-REEL7

Description: The AD7476ARTZ-REEL7 is a compact and efficient 12-bit analog-to-digital converter ...
Package: T&R | MOQ: 3000 | MPQ: 3000

ADR441BRZ-REEL7 / The ADR441BRZ-REEL7 is a high-precision <strong>2.5V voltage reference IC</strong> from <strong>Analog Devices</strong>, designed for applications requiring stable and accurate reference voltages in analog and mixed-signal systems. It delivers exceptional performance with <strong>low noise and high initial accuracy</strong>, making it ideal for precision measurement and control applications. <br><br>This device features a <strong>low temperature coefficient</strong>, ensuring minimal voltage drift over a wide temperature range, which is critical for maintaining accuracy in industrial and instrumentation environments. It also provides <strong>excellent long-term stability</strong>, making it suitable for high-reliability systems. <br><br>The ADR441BRZ-REEL7 operates with a <strong>wide input voltage range</strong> and offers <strong>low dropout performance</strong>, allowing stable operation even under varying supply conditions. Its <strong>low output noise and high power supply rejection ratio (PSRR)</strong> ensure clean and stable reference output in sensitive analog circuits. <br><br>Housed in a compact <strong>SOIC-8 surface-mount package</strong>, the device is optimized for PCB space efficiency while maintaining robust electrical characteristics. It is also designed for easy integration into high-precision designs. <br><br>The <strong>ADR441BRZ-REEL7</strong> is widely used in <strong>data acquisition systems, precision ADC/DAC circuits, industrial instrumentation, medical devices, and high-resolution measurement equipment</strong>, where accurate and stable voltage references are essential.
ADR441BRZ-REEL7

Description: The ADR441BRZ-REEL7 is a high-precision 2.5V voltage reference IC from ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT25QU02GCBB8E12-0AUT / The MT25QU02GCBB8E12-0AUT is a high-density <strong>2Gb serial NOR Flash memory</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial applications, and high-performance code storage. It provides a large storage capacity organized internally for efficient data access and fast read operations. <br><br>The device utilizes a <strong>quad SPI (QSPI) interface</strong>, enabling high-speed data transfer with multiple I/O lines and supporting enhanced throughput compared to standard SPI flash memories. It is capable of operating at clock frequencies up to approximately <strong>133 MHz</strong>, ensuring fast execution for code and data retrieval. <br><br>Built with advanced flash architecture, the MT25QU02GCBB8E12-0AUT supports <strong>execute-in-place (XIP)</strong>, allowing systems to run code directly from the flash memory without copying it into RAM, thereby improving system efficiency and reducing latency. <br><br>The memory operates at a low <strong>1.7V to 2.0V supply voltage (typ. 1.8V)</strong>, offering reduced power consumption suitable for energy-sensitive designs. It also includes features such as <strong>sector and block erase, program suspend/resume, deep power-down mode, and advanced security registers</strong> for flexible memory management and enhanced data protection. <br><br>Packaged in a compact <strong>24-ball UFBGA surface-mount package</strong>, the device is optimized for space-constrained PCB layouts while maintaining strong electrical performance. <br><br>The <strong>MT25QU02GCBB8E12-0AUT</strong> is widely used in <strong>embedded systems, IoT devices, automotive electronics, industrial control systems, networking equipment, and consumer electronics</strong>, where high-density, reliable, and high-speed non-volatile memory is required.
MT25QU02GCBB8E12-0AUT

Description: The MT25QU02GCBB8E12-0AUT is a high-density 2Gb serial NOR Flash memory d ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT40A256M16GE-083E:B TR / The MT40A256M16GE-083E:B TR is a high-efficiency <strong>4Gb DDR4 SDRAM</strong> manufactured by <strong>Micron Technology</strong>, designed for modern embedded systems, industrial computing, and high-speed digital applications. It features a memory organization of <strong>256M × 16 bits</strong>, delivering a balanced combination of density and performance for demanding memory requirements. <br><br>This device utilizes a <strong>DDR4 architecture</strong>, enabling data transfers on both rising and falling edges of the clock signal for improved bandwidth and system efficiency. With support for data rates up to approximately <strong>2400 MT/s</strong>, it provides reliable high-speed performance for a wide range of applications. <br><br>The MT40A256M16GE-083E:B TR incorporates a <strong>multi-bank and bank group architecture</strong>, allowing parallel internal operations and enhanced memory access efficiency. It supports features such as <strong>burst length 8 (BL8), programmable CAS latency, and on-die termination (ODT)</strong>, ensuring flexibility and signal integrity in complex system designs. <br><br>Operating at a low <strong>1.2V supply voltage</strong>, the device offers improved power efficiency compared to earlier SDRAM technologies. It also supports <strong>POD (Pseudo Open Drain) I/O interface</strong>, which enhances signal quality and reduces power consumption. <br><br>Encased in a compact <strong>96-ball FBGA surface-mount package</strong>, the MT40A256M16GE-083E:B TR is well-suited for high-density PCB layouts while maintaining strong electrical reliability. <br><br>The <strong>MT40A256M16GE-083E:B TR</strong> is widely used in <strong>industrial systems, networking equipment, embedded platforms, automotive electronics, and high-performance computing applications</strong>, where fast, reliable, and energy-efficient DDR4 memory is required.
MT40A256M16GE-083E:B TR

Description: The MT40A256M16GE-083E:B TR is a high-efficiency 4Gb DDR4 SDRAM manufactu ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT40A512M16TD-062E:R / The MT40A512M16TD-062E:R is a high-performance <strong>8Gb DDR4 SDRAM</strong> developed by <strong>Micron Technology</strong>, designed for advanced computing, embedded systems, and high-speed data processing applications. It features a memory organization of <strong>512M × 16 bits</strong>, delivering high density and efficient data throughput for modern system requirements. <br><br>This device operates using a <strong>double data rate (DDR4) architecture</strong>, transferring data on both the rising and falling edges of the clock signal, which significantly improves bandwidth and overall system efficiency. With a data rate of up to <strong>3200 MT/s (0.625ns clock cycle)</strong>, it is well-suited for high-speed memory applications. <br><br>The MT40A512M16TD-062E:R incorporates a <strong>bank group architecture with multiple internal banks</strong>, enabling parallel operations and improved memory access efficiency. It supports advanced features such as <strong>burst length 8 (BL8), on-die termination (ODT), and programmable CAS latency</strong>, allowing optimized performance across various system designs. <br><br>Operating at a low <strong>1.2V supply voltage</strong>, the device offers improved power efficiency compared to previous generation SDRAM technologies. It is compatible with modern memory controllers and supports <strong>POD (Pseudo Open Drain) I/O interface</strong> for enhanced signal integrity. <br><br>The memory is packaged in a compact <strong>96-ball FBGA surface-mount package</strong>, making it suitable for high-density PCB layouts while ensuring reliable electrical performance. <br><br>The <strong>MT40A512M16TD-062E:R</strong> is widely used in <strong>high-performance embedded systems, networking equipment, industrial computing, automotive electronics, and data-intensive applications</strong>, where fast, reliable, and energy-efficient DDR4 memory is essential.
MT40A512M16TD-062E:R

Description: The MT40A512M16TD-062E:R is a high-performance 8Gb DDR4 SDRAM developed b ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC8M16A2P-75:G / The MT48LC8M16A2P-75:G is a dependable <strong>128Mbit synchronous DRAM (SDRAM)</strong> manufactured by <strong>Micron Technology</strong>, designed for embedded, industrial, and communication systems that require stable and efficient high-speed memory. It features a memory organization of <strong>4 banks × 8M × 16 bits</strong>, enabling fast parallel data access and optimized bandwidth performance. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized with the system clock, ensuring accurate timing and reliable operation. With a <strong>-75 speed grade</strong>, it supports clock frequencies up to approximately <strong>133 MHz</strong>, making it suitable for a wide range of applications. <br><br>Its internal design includes a <strong>four-bank architecture with pipelined data paths</strong>, allowing concurrent operations that enhance memory throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options (2 or 3 cycles)</strong>, offering flexibility for different system requirements. <br><br>The MT48LC8M16A2P-75:G operates at a <strong>3.3V supply voltage</strong> and is compatible with standard <strong>LVTTL logic levels</strong>, ensuring seamless integration with microcontrollers, DSPs, and FPGA platforms. It also includes features such as <strong>auto-refresh, self-refresh, and data masking (DQM)</strong> to maintain data integrity during operation. <br><br>Encased in a compact <strong>54-pin TSOP-II surface-mount package</strong>, the device is optimized for space-constrained PCB designs while maintaining robust electrical performance. <br><br>The <strong>MT48LC8M16A2P-75:G</strong> is widely used in <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and display applications</strong>, where reliable and cost-effective SDRAM solutions are required.
MT48LC8M16A2P-75:G

Description: The MT48LC8M16A2P-75:G is a dependable 128Mbit synchronous DRAM (SDRAM) m ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC8M16A2P-6A-IT-L / The MT48LC8M16A2P-6A-IT-L is a high-speed <strong>128Mbit synchronous DRAM (SDRAM)</strong> from <strong>Micron Technology</strong>, engineered for demanding embedded and industrial applications requiring fast and reliable volatile memory. It is organized as <strong>4 banks × 8M × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth performance. <br><br>The device features a <strong>fully synchronous interface</strong>, where all inputs and outputs are aligned with the system clock, ensuring consistent timing and stable operation. With a <strong>-6A speed grade</strong>, it supports clock frequencies up to approximately <strong>166 MHz</strong>, making it suitable for high-performance digital systems. <br><br>Designed with a <strong>four-bank internal architecture and pipelined data paths</strong>, the MT48LC8M16A2P-6A-IT-L allows concurrent operations to improve throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options (2 or 3 cycles)</strong>, offering flexibility for system-level optimization. <br><br>Operating at a standard <strong>3.3V supply voltage</strong>, the device is compatible with <strong>LVTTL interface levels</strong>, enabling easy integration with microprocessors, DSPs, and FPGA-based designs. It also incorporates essential features such as <strong>auto-refresh, self-refresh, and data masking (DQM)</strong> to maintain data integrity and efficient memory management. <br><br>The memory is housed in a compact <strong>54-pin TSOP-II surface-mount package</strong>, making it ideal for space-constrained PCB layouts while ensuring reliable electrical performance. <br><br>The <strong>MT48LC8M16A2P-6A-IT-L</strong> is widely used in <strong>industrial automation systems, networking hardware, embedded controllers, consumer electronics, and display solutions</strong>, where high-speed and cost-effective SDRAM is essential.
MT48LC8M16A2P-6A-IT-L

Description: The MT48LC8M16A2P-6A-IT-L is a high-speed 128Mbit synchronous DRAM (SDRAM) ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC8M16A2P-6A:L Z / The <strong>MT48LC8M16A2P-6A:L Z</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, communication devices, and general-purpose applications requiring reliable and efficient volatile memory.<br><br>The device features a memory organization of <strong>8M x 16 bits</strong> and utilizes a <strong>4-bank internal architecture</strong>, allowing parallel operations and improved data throughput across system-level memory interfaces. All operations are synchronized to the clock signal through a <strong>fully synchronous interface</strong>, ensuring stable timing and predictable performance. <br><br>It operates with a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and supports clock speeds up to approximately <strong>167MHz</strong>, with an access time of around <strong>5.4ns</strong>, making it suitable for high-speed data processing and buffering applications. <br><br>The device supports advanced SDRAM functions including <strong>programmable burst lengths, auto precharge, auto refresh, self refresh, and burst termination</strong>, enabling efficient memory control and maintaining data integrity during continuous operation.<br><br>This variant is typically intended for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronic systems and non-harsh environments. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC8M16A2P-6A:L Z provides a balance of performance and space efficiency for modern PCB designs.<br><br>The <strong>MT48LC8M16A2P-6A:L Z</strong> is widely used in <strong>embedded controllers, networking hardware, industrial electronics, consumer devices, and legacy computing systems</strong> where stable and cost-effective SDRAM memory is required.
MT48LC8M16A2P-6A:L Z

Description: The MT48LC8M16A2P-6A:L Z is a high-performance 128Mbit synchronou ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC8M16A2P-6A:L TR / The <strong>MT48LC8M16A2P-6A:L TR</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, communication equipment, and general-purpose digital applications that require stable, cost-effective volatile memory.<br><br>The device is organized as <strong>8M x 16 bits</strong> and uses a <strong>4-bank internal architecture</strong>, allowing efficient parallel memory operations and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where inputs and outputs are referenced to the system clock for predictable timing and reliable high-speed performance.<br><br>It supports operation at <strong>3.0V to 3.6V</strong> with a typical supply voltage of <strong>3.3V</strong>, and the <strong>-6A speed grade</strong> supports clock frequencies up to approximately <strong>167MHz</strong> with an access time of about <strong>5.4ns</strong>. These characteristics make it suitable for memory subsystems that require dependable bandwidth and fast response.<br><br>The device includes standard SDRAM features such as <strong>programmable burst lengths</strong>, <strong>auto precharge</strong>, <strong>auto refresh</strong>, <strong>self refresh</strong>, and burst termination support, helping simplify memory control while maintaining data integrity across different operating conditions.<br><br>This version is supplied in a compact <strong>54-pin TSOP-II surface-mount package</strong> and the <strong>TR</strong> suffix indicates <strong>tape and reel packaging</strong>, making it well suited for automated SMT assembly in volume production environments.<br><br>The <strong>MT48LC8M16A2P-6A:L TR</strong> is widely used in <strong>embedded controllers, networking equipment, industrial electronics, consumer devices, and legacy computing platforms</strong> where reliable parallel SDRAM memory is required.
MT48LC8M16A2P-6A:L TR

Description: The MT48LC8M16A2P-6A:L TR is a high-performance 128Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC8M16A2P-6A:L IT / The <strong>MT48LC8M16A2P-6A:L IT</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications requiring reliable and efficient volatile memory solutions.<br><br>The device is organized as <strong>8M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring predictable timing and stable data transfer. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC8M16A2P-6A:L IT supports clock frequencies up to approximately <strong>167 MHz</strong> with an access time around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions. <br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in demanding environments and long-life applications. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC8M16A2P-6A:L IT is optimized for space-constrained PCB designs while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC8M16A2P-6A:L IT</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and consumer electronics</strong> where stable and high-speed SDRAM memory is required.
MT48LC8M16A2P-6A:L IT

Description: The MT48LC8M16A2P-6A:L IT is a high-performance 128Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC8M16A2P-6A:L AT / The <strong>MT48LC8M16A2P-6A:L AT</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for automotive, embedded, and industrial applications requiring reliable and efficient volatile memory.<br><br>The device is organized as <strong>8M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring predictable timing and stable data transfer. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC8M16A2P-6A:L AT supports clock frequencies up to approximately <strong>167 MHz</strong> with access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is designed for <strong>automotive-grade applications</strong>, offering enhanced reliability and extended temperature support for operation in harsh environments.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC8M16A2P-6A:L AT is optimized for space-constrained PCB designs while maintaining strong electrical performance.<br><br>The <strong>MT48LC8M16A2P-6A:L AT</strong> is widely used in <strong>automotive electronics, industrial controllers, embedded systems, networking equipment, and communication devices</strong> where stable and high-speed SDRAM memory is required.
MT48LC8M16A2P-6A:L AT

Description: The MT48LC8M16A2P-6A:L AT is a high-performance 128Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC8M16A2P-6A IT:L / The <strong>MT48LC8M16A2P-6A IT:L</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications requiring reliable and efficient volatile memory solutions.<br><br>The device is organized as <strong>8M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the system clock, ensuring predictable timing and stable data transfer. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC8M16A2P-6A IT:L supports clock frequencies up to approximately <strong>167 MHz</strong> with an access time around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in demanding environments and long-life applications. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC8M16A2P-6A IT:L is optimized for space-constrained PCB designs while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC8M16A2P-6A IT:L</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and consumer electronics</strong> where stable and high-speed SDRAM memory is required.
MT48LC8M16A2P-6A IT:L

Description: The MT48LC8M16A2P-6A IT:L is a high-performance 128Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC8M16A2P-6A AT:L / The <strong>MT48LC8M16A2P-6A AT:L</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for automotive, embedded, and industrial applications requiring reliable and efficient volatile memory.<br><br>The device is organized as <strong>8M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized with the system clock, ensuring predictable timing and stable data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC8M16A2P-6A AT:L supports clock frequencies up to approximately <strong>167 MHz</strong>, making it suitable for high-speed memory applications.<br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is designed for <strong>automotive-grade applications</strong>, offering enhanced reliability and extended temperature support for use in demanding environments.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC8M16A2P-6A AT:L is optimized for space-constrained PCB designs while maintaining strong electrical performance.<br><br>The <strong>MT48LC8M16A2P-6A AT:L</strong> is widely used in <strong>automotive electronics, industrial controllers, embedded systems, communication devices, and consumer electronics</strong> where stable and high-speed SDRAM memory is required.
MT48LC8M16A2P-6A AT:L

Description: The MT48LC8M16A2P-6A AT:L is a high-performance 128Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC8M16A2B4-6A IT:L / The <strong>MT48LC8M16A2B4-6A IT:L</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication equipment requiring reliable and efficient volatile memory solutions.<br><br>The device is organized as <strong>8M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring predictable timing and stable data transfer. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC8M16A2B4-6A IT:L supports clock frequencies up to approximately <strong>167 MHz</strong> with an access time around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions. <br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, ensuring reliable performance in harsh environments and long-life applications. <br><br>Packaged in a compact <strong>54-ball VFBGA surface-mount form factor</strong>, the MT48LC8M16A2B4-6A IT:L is optimized for high-density PCB layouts while maintaining strong electrical performance and signal integrity.<br><br>The <strong>MT48LC8M16A2B4-6A IT:L</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, automotive electronics, and communication devices</strong> where stable and cost-effective SDRAM memory is required.
MT48LC8M16A2B4-6A IT:L

Description: The MT48LC8M16A2B4-6A IT:L is a high-performance 128Mbit synchron ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC64M4A2P-75:G TR / The <strong>MT48LC64M4A2P-75:G TR</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, communication equipment, and industrial applications requiring stable and cost-effective volatile memory solutions.<br><br>The device is organized as <strong>64M x 4 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory access and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized with the system clock, ensuring predictable timing and reliable performance. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC64M4A2P-75:G TR supports clock frequencies up to approximately <strong>133 MHz</strong> with an access time of around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM supports advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and pipelined operation</strong>, allowing efficient data transfers and optimized system performance. <br><br>This variant is supplied in <strong>tape and reel (TR) packaging</strong>, making it ideal for automated SMT assembly processes in high-volume production environments. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC64M4A2P-75:G TR is optimized for space-constrained PCB designs while maintaining reliable electrical and thermal characteristics.<br><br>The <strong>MT48LC64M4A2P-75:G TR</strong> is widely used in <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong> where stable and high-speed SDRAM memory is required.
MT48LC64M4A2P-75:G TR

Description: The MT48LC64M4A2P-75:G TR is a high-performance 256Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC64M4A2P-75:G IT / The <strong>MT48LC64M4A2P-75:G IT</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for industrial, embedded, and communication systems requiring reliable and efficient volatile memory solutions.<br><br>The device is organized as <strong>64M x 4 bits</strong> and features a <strong>4-bank internal architecture</strong>, allowing concurrent memory access and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring predictable timing and stable performance.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC64M4A2P-75:G IT supports clock frequencies up to approximately <strong>133 MHz</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, enabling efficient memory management and data integrity under various operating conditions. <br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, ensuring reliable performance in demanding environments and long-life applications.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC64M4A2P-75:G IT is optimized for space-constrained PCB designs while maintaining strong electrical performance.<br><br>The <strong>MT48LC64M4A2P-75:G IT</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC64M4A2P-75:G IT

Description: The MT48LC64M4A2P-75:G IT is a high-performance 256Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC64M4A2P-75:G / The <strong>MT48LC64M4A2P-75:G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, consumer electronics, and communication applications requiring stable and cost-effective volatile memory solutions.<br><br>The device is organized as <strong>64M x 4 bits</strong> and features a <strong>4-bank internal architecture</strong>, allowing concurrent memory access and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring predictable timing and reliable data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC64M4A2P-75:G supports clock frequencies up to approximately <strong>133 MHz</strong> with an access time of around <strong>5.4 ns</strong>, making it suitable for stable and efficient memory performance. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, enabling efficient memory management and data integrity under various operating conditions. <br><br>This variant is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronic systems and non-harsh environments.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC64M4A2P-75:G is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC64M4A2P-75:G</strong> is widely used in <strong>embedded systems, industrial controllers, communication equipment, consumer electronics, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC64M4A2P-75:G

Description: The MT48LC64M4A2P-75:G is a high-performance 256Mbit synchronous ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC64M4A2P-75 IT:G / The <strong>MT48LC64M4A2P-75 IT:G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for industrial, embedded, and communication systems requiring reliable and efficient volatile memory solutions.<br><br>The device is organized as <strong>64M x 4 bits</strong> and features a <strong>4-bank internal architecture</strong>, allowing concurrent memory access and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring predictable timing and stable performance.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC64M4A2P-75 IT:G supports clock frequencies up to approximately <strong>133 MHz</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, enabling efficient memory management and data integrity under various operating conditions. <br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, ensuring reliable performance in demanding environments and long-life applications.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC64M4A2P-75 IT:G is optimized for space-constrained PCB designs while maintaining strong electrical performance.<br><br>The <strong>MT48LC64M4A2P-75 IT:G</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC64M4A2P-75 IT:G

Description: The MT48LC64M4A2P-75 IT:G is a high-performance 256Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC4M32B2P-75:G / The <strong>MT48LC4M32B2P-75:G</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, consumer electronics, and general-purpose applications requiring stable and cost-effective volatile memory.<br><br>The device is organized as <strong>4M x 32 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring predictable timing and reliable data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC4M32B2P-75:G supports clock frequencies up to approximately <strong>133 MHz</strong>, making it suitable for stable and efficient memory performance in a wide range of applications.<br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronic systems and non-harsh environments.<br><br>Packaged in a compact <strong>86-pin TSOP-II surface-mount form factor</strong>, the MT48LC4M32B2P-75:G is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC4M32B2P-75:G</strong> is widely used in <strong>embedded systems, industrial controllers, communication devices, consumer electronics, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC4M32B2P-75:G

Description: The MT48LC4M32B2P-75:G is a high-performance 128Mbit synchronous ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC4M32B2P-6A-IT-L / The <strong>MT48LC4M32B2P-6A-IT-L</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications requiring reliable and efficient volatile memory solutions.<br><br>The device is organized as <strong>4M x 32 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring predictable timing and stable data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC4M32B2P-6A-IT-L supports clock frequencies up to approximately <strong>167 MHz</strong> with an access time of around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions. <br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in harsh environments and long-life applications. <br><br>Packaged in a compact <strong>86-pin TSOP-II surface-mount form factor</strong>, the MT48LC4M32B2P-6A-IT-L is optimized for space-constrained PCB designs while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC4M32B2P-6A-IT-L</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and high-speed SDRAM memory is required.
MT48LC4M32B2P-6A-IT-L

Description: The MT48LC4M32B2P-6A-IT-L is a high-performance 128Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC4M32B2P-6A-G / The <strong>MT48LC4M32B2P-6A-G</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, communication equipment, and general-purpose applications requiring reliable and cost-effective volatile memory solutions.<br><br>The device is organized as <strong>4M x 32 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring predictable timing and stable performance. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC4M32B2P-6A-G supports clock frequencies up to approximately <strong>167 MHz</strong> with an access time around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronic systems and non-harsh environments. <br><br>Packaged in a compact <strong>86-pin TSOP-II surface-mount form factor</strong>, the MT48LC4M32B2P-6A-G is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC4M32B2P-6A-G</strong> is widely used in <strong>embedded systems, industrial controllers, communication devices, consumer electronics, and legacy computing platforms</strong> where stable and high-speed SDRAM memory is required.
MT48LC4M32B2P-6A-G

Description: The MT48LC4M32B2P-6A-G is a high-performance 128Mbit synchronous ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC4M32B2P-6A IT:L / The <strong>MT48LC4M32B2P-6A IT:L</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications requiring reliable and efficient volatile memory.<br><br>The device is organized as <strong>4M x 32 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized with the system clock, ensuring predictable timing and stable data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC4M32B2P-6A IT:L supports clock frequencies up to approximately <strong>167 MHz</strong>, making it suitable for high-speed memory applications.<br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in harsh environments and long-life applications.<br><br>Packaged in a compact <strong>86-pin TSOP-II surface-mount form factor</strong>, the MT48LC4M32B2P-6A IT:L is optimized for space-constrained PCB designs while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC4M32B2P-6A IT:L</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and high-speed SDRAM memory is required.
MT48LC4M32B2P-6A IT:L

Description: The MT48LC4M32B2P-6A IT:L is a high-performance 128Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC4M32B2B5-7 IT:G / The <strong>MT48LC4M32B2B5-7 IT:G</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication equipment requiring reliable and efficient volatile memory.<br><br>The device is organized as <strong>4M x 32 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized with the system clock for predictable timing and stable data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC4M32B2B5-7 IT:G supports clock frequencies up to approximately <strong>143 MHz</strong> with an access time of around <strong>5.5 ns</strong>, making it suitable for high-speed and cost-effective memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and power-down modes</strong>, ensuring efficient memory management and data integrity under various operating conditions.<br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in harsh environments and long-life applications. <br><br>Packaged in a compact <strong>90-ball VFBGA surface-mount form factor</strong>, the MT48LC4M32B2B5-7 IT:G is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal reliability.<br><br>The <strong>MT48LC4M32B2B5-7 IT:G</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, automotive electronics, and communication devices</strong> where stable and high-speed SDRAM memory is required.
MT48LC4M32B2B5-7 IT:G

Description: The MT48LC4M32B2B5-7 IT:G is a high-performance 128Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC4M32B2B5-6A-XIT-L / The <strong>MT48LC4M32B2B5-6A-XIT-L</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial applications, and communication equipment requiring reliable volatile memory and efficient data throughput.<br><br>The device is organized as <strong>4M x 32 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system performance. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal for predictable timing and stable operation. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the device supports clock frequencies up to approximately <strong>167 MHz</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM supports advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and burst terminate</strong>, ensuring efficient memory management and data integrity across various operating conditions. <br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in harsh environments and long-life applications. <br><br>Packaged in a compact <strong>90-ball VFBGA surface-mount form factor</strong>, the MT48LC4M32B2B5-6A-XIT-L is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal performance.<br><br>The <strong>MT48LC4M32B2B5-6A-XIT-L</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, automotive electronics, and communication devices</strong> where stable and cost-effective SDRAM memory is required.
MT48LC4M32B2B5-6A-XIT-L

Description: The MT48LC4M32B2B5-6A-XIT-L is a high-performance 128Mbit synchro ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC32M8A2P-75:G TR / The <strong>MT48LC32M8A2P-75:G TR</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, communication equipment, and general-purpose applications requiring stable and cost-effective volatile memory solutions.<br><br>The device is organized as <strong>32M x 8 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring predictable timing and reliable data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC32M8A2P-75:G TR supports clock frequencies up to approximately <strong>133 MHz</strong>, providing stable performance for a wide range of digital applications. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is supplied in <strong>tape and reel (TR) packaging</strong>, making it suitable for automated SMT assembly processes in high-volume production environments. Additionally, it is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC32M8A2P-75:G TR is optimized for space-constrained PCB designs while maintaining reliable electrical and thermal performance.<br><br>The <strong>MT48LC32M8A2P-75:G TR</strong> is widely used in <strong>embedded systems, industrial controllers, communication devices, consumer electronics, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC32M8A2P-75:G TR

Description: The MT48LC32M8A2P-75:G TR is a high-performance 256Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC32M8A2P-75:G IT / The <strong>MT48LC32M8A2P-75:G IT</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for industrial, embedded, and communication systems requiring reliable and stable volatile memory performance.<br><br>The device is organized as <strong>32M x 8 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory access and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized with the system clock to ensure predictable timing and efficient operation. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC32M8A2P-75:G IT supports clock frequencies up to approximately <strong>133 MHz</strong> with access times around <strong>5.4 ns</strong>, making it suitable for stable and cost-effective memory applications. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity under various operating conditions. <br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in harsh environments and long-life applications. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC32M8A2P-75:G IT is optimized for space-constrained PCB designs while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC32M8A2P-75:G IT</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC32M8A2P-75:G IT

Description: The MT48LC32M8A2P-75:G IT is a high-performance 256Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000













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