All Products Transistor

BSS84-7-F / The BSS84-7-F is a P-channel enhancement-mode MOSFET manufactured by Diodes Incorporated, optimized for low-voltage, high-speed switching applications. It features a drain-source voltage rating of 50V and a continuous drain current of 130mA at a case temperature of 25°C. The MOSFET offers a maximum on-resistance (Rds(on)) of 10 ohms at a gate-source voltage (Vgs) of 5V and a drain current of 100mA. With a gate threshold voltage (Vgs(th)) of up to 2V at 1mA, it ensures reliable switching performance. The device operates efficiently within a junction temperature range of -55°C to 150°C, making it suitable for various applications requiring compact and efficient switching solutions.
BSS84-7-F

Description: The BSS84-7-F is a P-channel enhancement-mode MOSFET manufactured by Diodes Incorporated, ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BSS123-7-F / The BSS123-7-F is an N-channel enhancement-mode MOSFET manufactured by Diodes Incorporated, designed for low-voltage, high-speed switching applications. It features a drain-source voltage rating of 100V and a continuous drain current of 170mA at a case temperature of 25°C. The MOSFET offers a maximum on-resistance (Rds(on)) of 6 ohms at a gate-source voltage (Vgs) of 10V and a drain current of 170mA. With a gate threshold voltage (Vgs(th)) of up to 2V at 1mA, it ensures reliable switching performance. The device operates efficiently within a junction temperature range of -55°C to 150°C, making it suitable for various applications requiring compact and efficient switching solutions.
BSS123-7-F

Description: The BSS123-7-F is an N-channel enhancement-mode MOSFET manufactured by Diodes Incorporated ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BSP75NTA / The BSP75NTA is a self-protected low-side IntelliFET MOSFET switch manufactured by Diodes Incorporated. Designed for high-current switching applications, it features a low on-resistance of 0.385 ohms, supporting continuous drain currents up to 1.3A. The device offers comprehensive protection mechanisms, including short-circuit, overvoltage, overcurrent, and thermal shutdown with auto-restart functionality. Housed in a compact SOT-223 package, the BSP75NTA is suitable for automotive and other space-constrained applications requiring efficient and reliable switching performance.
BSP75NTA

Description: The BSP75NTA is a self-protected low-side IntelliFET MOSFET switch manufactured by Diodes ...
Package: T&R | MOQ: 1000 | MPQ: 1000

BC846B,215 / The BC846B,215 is an NPN general-purpose transistor ideal for switching and amplification applications. Manufactured by Nexperia, it comes in a compact SOT23 package, offering high performance with a maximum collector-emitter voltage of 65V and a maximum collector current of 100mA. It features a transition frequency of 100 MHz and is capable of handling power dissipation up to 250mW. The BC846B,215 is suitable for use in a wide range of electronic circuits, thanks to its high current gain and efficient operation across a wide temperature range.
BC846B,215

Description: The BC846B,215 is an NPN general-purpose transistor ideal for switching and amplification ...
Package: T&R | MOQ: 3000 | MPQ: 3000

AO3401A / The AO3401A is a P-channel MOSFET in an SOT-23-3 package, designed for low-voltage switching applications. It features low on-resistance, high efficiency, and fast switching speed, making it ideal for battery-powered devices, DC-DC converters, load switching, and power management applications.
AO3401A

Description: The AO3401A is a P-channel MOSFET in an SOT-23-3 package, designed for low-voltage switchi ...
Package: T&R | MOQ: 3000 | MPQ: 3000

AO3400A / The AO3400A is a 30V N-Channel MOSFET designed for efficient power switching applications. Manufactured by Alpha & Omega Semiconductor Inc., this device offers a maximum continuous drain current of 5.7A at 25°C, making it suitable for various applications, including consumer electronics, industrial control systems, and automotive sectors. Its low gate charge and compact SOT-23 package enhance its performance in space-constrained designs.
AO3400A

Description: The AO3400A is a 30V N-Channel MOSFET designed for efficient power switching applications. ...
Package: T&R | MOQ: 3000 | MPQ: 3000

MMBT3904LT1G / Bipolar (BJT) Transistor NPN 40 V 200 mA 300MHz 300 mW Surface Mount SOT-23-3 (TO-236)
MMBT3904LT1G

Description: Bipolar (BJT) Transistor NPN 40 V 200 mA 300MHz 300 mW Surface Mount SOT-23-3 (TO-236) ...
Package: T&R | MOQ: 3000 | MPQ: 3000

MMBT3904-E / SMD Equivalent 2N3904 Plastic-Encapsulate Transistors Epitaxial Planar Die Construction
MMBT3904-E

Description: SMD Equivalent 2N3904 Plastic-Encapsulate Transistors Epitaxial Planar Die Construction ...
Package: T&R | MOQ: 3000 | MPQ: 3000

30N06 / N-Channel 60 V 30A (Tc) 55W (Tc) Surface Mount TO-252 (DPAK)
30N06

Description: N-Channel 60 V 30A (Tc) 55W (Tc) Surface Mount TO-252 (DPAK) ...
Package: T&R | MOQ: 2500 | MPQ: 2500

2SA1015 / Bipolar (BJT) Transistor
2SA1015

Description: Bipolar (BJT) Transistor ...
Package: T&R | MOQ: 3000 | MPQ: 3000

1N65G / N-Channel 650 V 1A (Tj) Surface Mount SOT-223
1N65G

Description: N-Channel 650 V 1A (Tj) Surface Mount SOT-223 ...
Package: T&R | MOQ: 2500 | MPQ: 2500

1N60G / 600V N-Channel 1A (Tj) Surface Mount SMT MOSfet Transistor SOT-223
1N60G

Description: 600V N-Channel 1A (Tj) Surface Mount SMT MOSfet Transistor SOT-223 ...
Package: T&R | MOQ: 2500 | MPQ: 2500

ZTX603STZ / Bipolar (BJT) Transistor NPN - Darlington 80 V 1 A 150MHz 1 W Through Hole E-Line (TO-92)
ZTX603STZ

Description: Bipolar (BJT) Transistor NPN - Darlington 80 V 1 A 150MHz 1 W Through Hole E-Line (TO-92) ...
Package: BULK | MOQ: 2000 | MPQ: 2000

PMBT3904,215 / Bipolar (BJT) Transistor NPN 40 V 200 mA 300MHz 250 mW Surface Mount TO-236AB
PMBT3904,215

Description: Bipolar (BJT) Transistor NPN 40 V 200 mA 300MHz 250 mW Surface Mount TO-236AB ...
Package: T&R | MOQ: 3000 | MPQ: 3000

IRFH8318TRPBF / N-Channel 30 V 27A (Ta), 120A (Tc) 3.6W (Ta), 59W (Tc) Surface Mount PQFN (5x6)
IRFH8318TRPBF

Description: N-Channel 30 V 27A (Ta), 120A (Tc) 3.6W (Ta), 59W (Tc) Surface Mount PQFN (5x6) ...
Package: T&R | MOQ: 4000 | MPQ: 4000

BC807-40,215 / Bipolar (BJT) Transistor PNP 45 V 500 mA 80MHz 250 mW Surface Mount TO-236AB
BC807-40,215

Description: Bipolar (BJT) Transistor PNP 45 V 500 mA 80MHz 250 mW Surface Mount TO-236AB ...
Package: T&R | MOQ: 9000 | MPQ: 3000

BC817-40,215 / Bipolar (BJT) Transistor NPN 45V 500 mA 100MHz 250 mW Surface Mount TO-236AB
BC817-40,215

Description: Bipolar (BJT) Transistor NPN 45V 500 mA 100MHz 250 mW Surface Mount TO-236AB ...
Package: T&R | MOQ: 3000 | MPQ: 3000

2SC5200-O(Q) / The 2SC5200-O(Q) is an NPN bipolar junction transistor (BJT) manufactured by Toshiba, commonly used in high-power amplifier applications. Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)
2SC5200-O(Q)

Description: The 2SC5200-O(Q) is an NPN bipolar junction transistor (BJT) manufactured by Toshiba, comm ...
Package: TUBE | MOQ: 1000 | MPQ: 100

2SA1943-O(Q) / The 2SA1943-O(Q) is a PNP bipolar junction transistor (BJT) manufactured by Toshiba, commonly used in high-power amplifier applications. Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L),
2SA1943-O(Q)

Description: The 2SA1943-O(Q) is a PNP bipolar junction transistor (BJT) manufactured by Toshiba, commo ...
Package: TUBE | MOQ: 1000 | MPQ: 100

TK39A60W,S4VX(M / The TK39A60W,S4VX is an N-channel MOSFET developed by Toshiba, suitable for high-voltage switching applications. N-Channel 600 V 38.8A (Ta) 50W (Tc) Through Hole TO-220SIS.
TK39A60W,S4VX(M

Description: The TK39A60W,S4VX is an N-channel MOSFET developed by Toshiba, suitable for high-voltage s ...
Package: TUBE | MOQ: 2000 | MPQ: 50

SSM6N44FE,LM / The SSM6N44FE,LM is a dual N-channel MOSFET designed by Toshiba for small-signal applications. Mosfet Array 30V 100mA 150mW Surface Mount SOT-563/SOT-666.
SSM6N44FE,LM

Description: The SSM6N44FE,LM is a dual N-channel MOSFET designed by Toshiba for small-signal applicati ...
Package: T&R | MOQ: 4000 | MPQ: 4000

NVMFS6H836NWFT3G / N-Channel 80 V 15A (Ta), 74A (Tc) 3.7W (Ta), 89W (Tc) Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
NVMFS6H836NWFT3G

Description: N-Channel 80 V 15A (Ta), 74A (Tc) 3.7W (Ta), 89W (Tc) Surface Mount, Wettable Flank 5-DFNW ...
Package: T&R | MOQ: 5000 | MPQ: 5000

MMBT2222AT-7-F / The MMBT2222AT-7-F is a general-purpose NPN bipolar junction transistor (BJT) designed for low-power amplification and switching applications. Bipolar (BJT) Transistor NPN 40 V 600 mA 300MHz 150 mW Surface Mount SOT-523
MMBT2222AT-7-F

Description: The MMBT2222AT-7-F is a general-purpose NPN bipolar junction transistor (BJT) designed for ...
Package: T&R | MOQ: 3000 | MPQ: 3000

STGW30NC120HD / IGBT 1200 V 60 A 220 W Through Hole TO-247-3, The STGW30NC120HD is a high-performance N-channel Insulated Gate Bipolar Transistor (IGBT) from STMicroelectronics, designed for high-frequency applications.
STGW30NC120HD

Description: IGBT 1200 V 60 A 220 W Through Hole TO-247-3, The STGW30NC120HD is a high-performance N-ch ...
Package: TUBE | MOQ: 510 | MPQ: 30

STGW20NC60VD / IGBT 600 V 60 A 200 W Through Hole TO-247-3, The STGW20NC60VD is a very fast Insulated Gate Bipolar Transistor (IGBT) from STMicroelectronics, designed for high-frequency applications.
STGW20NC60VD

Description: IGBT 600 V 60 A 200 W Through Hole TO-247-3, The STGW20NC60VD is a very fast Insulated Gat ...
Package: TUBE | MOQ: 510 | MPQ: 30

MJD127T4 / Darlington PNP Transistor BJT (Bipolar) 100V 8A 20W Surface Mount DPAK The MJD127T4 is suitable for applications requiring high current handling and voltage capabilities, such as audio amplifiers, power supplies, and motor control circuits. Its high DC current gain ensures efficient operation, while the monolithic construction with built-in base-emitter shunt resistors enhances thermal stability and reliability. The device wide operating temperature range makes it suitable for various industrial and commercial applications. The MJD127T4 is available in a DPAK package, facilitating surface-mount assembly.
MJD127T4

Description: Darlington PNP Transistor BJT (Bipolar) 100V 8A 20W Surface Mount DPAK The MJD127T4 is sui ...
Package: T&R | MOQ: 2500 | MPQ: 2500

MJD122T4G / Darlington NPN Transistor BJT(Bipolar) 100V 8A 20W Surface Mount DPAK. The MJD122T4 is suitable for applications requiring high current handling and voltage capabilities, such as audio amplifiers, power supplies, and motor control circuits. Its high DC current gain ensures efficient operation, while the monolithic construction with a built-in base-emitter shunt resistor enhances thermal stability and reliability.
MJD122T4G

Description: Darlington NPN Transistor BJT(Bipolar) 100V 8A 20W Surface Mount DPAK. The MJD122T4 is sui ...
Package: T&R | MOQ: 2500 | MPQ: 2500

MJ11016G / Darlington 120 V 30 A 4MHz 200 W Through Hole TO-204/TO-3, The MJ11016G is suitable for applications requiring high current handling and voltage capabilities, such as audio amplifiers, power supplies, and motor control circuits. Its high DC current gain ensures efficient operation, while the monolithic construction with a built-in base-emitter shunt resistor enhances thermal stability and reliability. The device wide operating temperature range makes it suitable for various industrial and commercial applications.
MJ11016G

Description: Darlington 120 V 30 A 4MHz 200 W Through Hole TO-204/TO-3, The MJ11016G is suitable for ap ...
Package: TRAY | MOQ: 1000 | MPQ: 100

IRL540NPBF / N-Channel 100V 36A 140W Through Hole TO-220-3, 44mOhm @18A, 10V
IRL540NPBF

Description: N-Channel 100V 36A 140W Through Hole TO-220-3, 44mOhm @18A, 10V ...
Package: TUBE | MOQ: 1000 | MPQ: 50

IRL1004PBF / Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
IRL1004PBF

Description: Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced proc ...
Package: TUBE | MOQ: 1000 | MPQ: 50

IRFZ44NPBF / N-Channel 55 V 49A 94W Through Hole TO-220-3, 17.5mOhm @25A, 10V
IRFZ44NPBF

Description: N-Channel 55 V 49A 94W Through Hole TO-220-3, 17.5mOhm @25A, 10V ...
Package: TUBE | MOQ: 1000 | MPQ: 50

IRFPG50PBF / N-Channel 1000V 6.1A 190W Through Hole TO-247-3, 2Ohm @3.6A 10V Rds On (Max) @ Id, Vgs
IRFPG50PBF

Description: N-Channel 1000V 6.1A 190W Through Hole TO-247-3, 2Ohm @3.6A 10V Rds On (Max) @ Id, Vgs ...
Package: TUBE | MOQ: 1000 | MPQ: 25

IRFP460APBF / N-Channel 500V 20A 280W Through Hole TO-247-3, 4V @250µA
IRFP460APBF

Description: N-Channel 500V 20A 280W Through Hole TO-247-3, 4V @250µA ...
Package: TUBE | MOQ: 1000 | MPQ: 25

IRFP450APBF / N-Channel 500V 14A 190W Through Hole TO-247-3, 4V @250µA Vgs(th), 400mOhm @8.4A 10VRds On (Max)
IRFP450APBF

Description: N-Channel 500V 14A 190W Through Hole TO-247-3, 4V @250µA Vgs(th), 400mOhm @8.4A 10VRds On ...
Package: TUBE | MOQ: 1000 | MPQ: 25

IRFP4321PBF / N-Channel 150V 78A 310W Through Hole TO-247-3, 5V @250µA
IRFP4321PBF

Description: N-Channel 150V 78A 310W Through Hole TO-247-3, 5V @250µA ...
Package: TUBE | MOQ: 1000 | MPQ: 25

IRFP3710PBF / N-Channel 100V 57A 200W Through Hole TO-247-3, 3000pF @25V, 25mOhm @28A, 10V
IRFP3710PBF

Description: N-Channel 100V 57A 200W Through Hole TO-247-3, 3000pF @25V, 25mOhm @28A, 10V ...
Package: TUBE | MOQ: 1000 | MPQ: 25

IRFP260N / N-Channel 200 V 50A (Tc) 300W (Tc) Through Hole TO-247AC, 4V @250µA Vgs(th)
IRFP260N

Description: N-Channel 200 V 50A (Tc) 300W (Tc) Through Hole TO-247AC, 4V @250µA Vgs(th) ...
Package: TUBE | MOQ: 1000 | MPQ: 25

IRFP250NPBF / N-Channel 200 V 30A (Tc) 214W (Tc) Through Hole TO-247AC, 75mOhm @18A, 10V
IRFP250NPBF

Description: N-Channel 200 V 30A (Tc) 214W (Tc) Through Hole TO-247AC, 75mOhm @18A, 10V ...
Package: TUBE | MOQ: 1000 | MPQ: 25

IRF9540NPBF / P-Channel 100 V 23A (Tc) 140W (Tc) Through Hole TO-220-3, 117mOhm @11A, 10V, 4V @250µA, 97 nC @10V
IRF9540NPBF

Description: P-Channel 100 V 23A (Tc) 140W (Tc) Through Hole TO-220-3, 117mOhm @11A, 10V, 4V @250µA, 9 ...
Package: TUBE | MOQ: 1000 | MPQ: 50

IRF830PBF / N-Channel 500 V 4.5A (Tc) 74W (Tc) Through Hole TO-220-3, 1.5Ohm @ 2.7A, 10V, 4V @250µA, ±20V, 610pF @25 V
IRF830PBF

Description: N-Channel 500 V 4.5A (Tc) 74W (Tc) Through Hole TO-220-3, 1.5Ohm @ 2.7A, 10V, 4V @250µA, ...
Package: TUBE | MOQ: 1000 | MPQ: 50

IRF540NPBF / N-Channel 100 V 33A (Tc) 130W (Tc) Through Hole, 44mOhm @16A, 10V, 71nC @ 10 V
IRF540NPBF

Description: N-Channel 100 V 33A (Tc) 130W (Tc) Through Hole, 44mOhm @16A, 10V, 71nC @ 10 V ...
Package: TUBE | MOQ: 2000 | MPQ: 50

IRF3205 / N-Channel 55 V 110A (Tc) 200W (Tc) Through Hole TO-220-3, 8mOhm @62A, 10V
IRF3205

Description: N-Channel 55 V 110A (Tc) 200W (Tc) Through Hole TO-220-3, 8mOhm @62A, 10V ...
Package: TUBE | MOQ: 1000 | MPQ: 50

IRF2807 / N-Channel 75 V 82A (Tc) 230W (Tc) Through Hole TO-220AB, Advanced Process Technology, Ultra Low On-Resistance, Dynamic dv/dt Rating
IRF2807

Description: N-Channel 75 V 82A (Tc) 230W (Tc) Through Hole TO-220AB, Advanced Process Technology, Ultr ...
Package: TUBE | MOQ: 1000 | MPQ: 50

IRFS23N20D / IRFS23N20D MOSfet VDS=200V, ID=52A, RDS(ON)<60mΩ@VGS=10V This N-Channel MOSFET uses advanced Planar technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
IRFS23N20D

Description: IRFS23N20D MOSfet VDS=200V, ID=52A, RDS(ON)<60mΩ@VGS=10V This N-Channel MOSFET uses adva ...
Package: | MOQ: | MPQ:

IRF7406 / -5.8A, 2.5 W, 45 mΩ , -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
IRF7406

Description: -5.8A, 2.5 W, 45 mΩ , -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package ...
Package: T&R | MOQ: 3000 | MPQ: 3000

IRLB8721 / 30V 80A N-Channel Enhancement MOSfet RDSon less than 6mOhm @Vgs10V
IRLB8721

Description: 30V 80A N-Channel Enhancement MOSfet RDSon less than 6mOhm @Vgs10V ...
Package: TUBE | MOQ: 1000 | MPQ: 50

IRFHM4234 / IRFHM4234, 20V N-Channel Enhancement Mode MOSfet 80A, RDSon less than 5mOhm
IRFHM4234

Description: IRFHM4234, 20V N-Channel Enhancement Mode MOSfet 80A, RDSon less than 5mOhm ...
Package: T&R | MOQ: 4000 | MPQ: 4000

IRFZ24N / 60V 40mOhm 26A High Cell Density Trenched N-ch MOSFETs
IRFZ24N

Description: 60V 40mOhm 26A High Cell Density Trenched N-ch MOSFETs ...
Package: TUBE | MOQ: 1000 | MPQ: 50

DMN6040SSDQ-13 / Mosfet Array 60V 5A (Ta) 1.3W Surface Mount, DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN6040SSDQ-13

Description: Mosfet Array 60V 5A (Ta) 1.3W Surface Mount, DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ...
Package: T&R | MOQ: 2500 | MPQ: 2500

BTS4140NHUMA1 / Power Switch/Driver 1:1 N-Channel 200mA PG-SOT223-4, BTS4140NINCT, BTS4140, BTS4140NHUMA1DKR, BTS4140NT, BTS4140NXT, BTS4140NHUMA1TR, BTS4140NINCT, BTS4140NINDKR, BTS4140NT, BTS4140NINDKR, BTS4140NINTR, SP000272323, BTS4140NINCT, BTS4140NINTR, BTS4140N, BTS4140NINTR, BTS4140NHUMA1CT, BTS4140NINDKR-NDR
BTS4140NHUMA1

Description: Power Switch/Driver 1:1 N-Channel 200mA PG-SOT223-4, BTS4140NINCT, BTS4140, BTS4140NHUMA1D ...
Package: T&R | MOQ: 4000 | MPQ: 4000

BDW94C / Bipolar (BJT) Transistor PNP - Darlington 100 V 12 A 80 W Through Hole TO-220
BDW94C

Description: Bipolar (BJT) Transistor PNP - Darlington 100 V 12 A 80 W Through Hole TO-220 ...
Package: TUBE | MOQ: 1000 | MPQ: 50













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