All Products Memory

W25Q32JVSSIQ / ​The W25Q32JVSSIQ is a 32-megabit (Mb) serial NOR flash memory device from Winbond Electronics, designed for high-speed data storage in space-constrained applications. It operates with a supply voltage ranging from 2.7 V to 3.6 V, making it suitable for various power configurations. The device supports standard SPI as well as high-performance Dual and Quad SPI modes, enabling data transfer rates up to 133 MHz. Its memory array is organized into 16,384 programmable pages of 256 bytes each, with up to 256 bytes programmable at a time. Erase operations can be performed on sectors (4 KB), blocks (32 KB and 64 KB), or the entire chip, providing flexibility for different application requirements. Additional features include a unique ID, one-time programmable (OTP) area, and programmable output driver strength, enhancing security and customization options. The W25Q32JVSSIQ is available in an 8-pin SOIC package, suitable for surface-mount applications. ​
W25Q32JVSSIQ

Description: ​The W25Q32JVSSIQ is a 32-megabit (Mb) serial NOR flash memory device from Winbond Elect ...
Package: TUBE | MOQ: 900 | MPQ: 90

MT47H64M16NF-25E:M / ​The MT47H64M16NF-25E:M is a DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module from Micron Technology Inc., offering a storage capacity of 1 gigabit (Gb). It is organized as 64 million words by 16 bits (64M x 16), providing a 16-bit data bus width. This module operates with a supply voltage of 1.8V ±0.1V and features an access time of 400 picoseconds, ensuring efficient data retrieval. It supports a maximum clock frequency of 400 MHz, corresponding to a data transfer rate of 800 megabits per second per pin. The write cycle time for both word and page operations is 15 nanoseconds. Housed in an 84-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 8 x 12.5 mm, the module is suitable for surface-mount applications. It is rated for an operating temperature range of -40°C to 105°C, making it suitable for industrial applications. Key features include programmable CAS latency (CL) of 3, 4, or 5, selectable burst lengths of 4 or 8, on-die termination (ODT), and compliance with JEDEC clock jitter specifications. ​
MT47H64M16NF-25E:M

Description: ​The MT47H64M16NF-25E:M is a DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) modul ...
Package: TRAY | MOQ: 1368 | MPQ: 1368

MT47H64M16NF-25E IT:M / ​The MT47H64M16NF-25E IT:M is a DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module produced by Micron Technology Inc., offering a storage capacity of 1 gigabit (Gb). It is organized as 64 million words by 16 bits (64M x 16), providing a 16-bit data bus width. The module operates with a supply voltage between 1.7V and 1.9V and features an access time of 400 picoseconds, ensuring efficient data retrieval. It supports a maximum clock frequency of 400 MHz, corresponding to a data transfer rate of 800 megabits per second per pin. The write cycle time for both word and page operations is 15 nanoseconds. Housed in an 84-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 8 x 12.5 mm, the module is suitable for surface-mount applications. It is rated for an operating temperature range of -40°C to 95°C, making it suitable for automotive applications. The 'TR' suffix indicates that the module is supplied in tape and reel packaging, facilitating automated assembly processes. ​
MT47H64M16NF-25E IT:M

Description: ​The MT47H64M16NF-25E IT:M is a DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) mo ...
Package: TRAY | MOQ: 1368 | MPQ: 1368

MT47H64M16NF-25E AIT:M / ​The MT47H64M16NF-25E AIT:M is a DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module manufactured by Micron Technology Inc. It offers a storage capacity of 1 gigabit (Gb), organized as 64 million words by 16 bits (64M x 16), providing a 16-bit data bus width. This module operates with a supply voltage between 1.7V and 1.9V and features an access time of 400 picoseconds, ensuring efficient data retrieval. It supports a maximum clock frequency of 400 MHz, corresponding to a data transfer rate of 800 megabits per second per pin. The write cycle time for both word and page operations is 15 nanoseconds. Housed in an 84-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 8 x 12.5 mm, the module is suitable for surface-mount applications. It is rated for an operating temperature range of -40°C to 95°C, making it suitable for automotive applications. The 'TR' suffix indicates that the module is supplied in tape and reel packaging, facilitating automated assembly processes. ​
MT47H64M16NF-25E AIT:M

Description: ​The MT47H64M16NF-25E AIT:M is a DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) m ...
Package: T&R | MOQ: 1368 | MPQ: 1368

MT47H64M16NF-25E AAT:M / ​The MT47H64M16NF-25E AAT:M is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module produced by Micron Technology Inc. It is organized as 64 million words by 16 bits (64M x 16), providing a data bus width of 16 bits. The module operates with a supply voltage between 1.7V and 1.9V and offers an access time of 400 picoseconds, ensuring rapid data retrieval. It supports a maximum clock frequency of 400 MHz, corresponding to a data transfer rate of 800 megabits per second per pin. The write cycle time for both word and page operations is 15 nanoseconds. Housed in an 84-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 8 x 12.5 mm, the module is suitable for surface-mount applications. It is rated for an operating temperature range of -40°C to 105°C, making it suitable for automotive applications. The 'TR' suffix indicates that the module is supplied in tape and reel packaging, facilitating automated assembly processes. ​
MT47H64M16NF-25E AAT:M

Description: ​The MT47H64M16NF-25E AAT:M is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access M ...
Package: TRAY | MOQ: 1368 | MPQ: 1368

MT47H64M16HR-3:H TR / ​The MT47H64M16HR-3:H TR is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module manufactured by Micron Technology Inc. It is organized as 64 million words by 16 bits (64M x 16), providing a data bus width of 16 bits. The module operates with a supply voltage between 1.7V and 1.9V and features an access time of 450 picoseconds, ensuring rapid data retrieval. It supports a maximum clock frequency of 333 MHz, corresponding to a data transfer rate of 666 megabits per second per pin. The write cycle time for both word and page operations is 15 nanoseconds. Housed in an 84-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 8 x 12.5 mm, the module is suitable for surface-mount applications. It is rated for an operating temperature range of 0°C to 85°C, making it suitable for commercial applications. The TR suffix indicates that the module is supplied in tape and reel packaging, facilitating automated assembly processes. ​
MT47H64M16HR-3:H TR

Description: ​The MT47H64M16HR-3:H TR is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memo ...
Package: T&R | MOQ: 2000 | MPQ: 2000

IS46DR16640C-3DBLA1-TR / ​The IS46DR16640C-3DBLA1-TR is a 1-gigabit DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module produced by Integrated Silicon Solution Inc. (ISSI). It features a 64M x 16-bit organization, operating at a clock frequency of up to 333 MHz, which corresponds to a data transfer rate of 666 megabits per second per pin. The module requires a supply voltage between 1.7V and 1.9V and offers an access time of 450 picoseconds. It is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8mm x 12.5mm and is rated for an operating temperature range of -40°C to +95°C, making it suitable for automotive applications. The 'TR' suffix indicates that the module is supplied in tape and reel packaging, ideal for automated assembly processes.​
IS46DR16640C-3DBLA1-TR

Description: ​The IS46DR16640C-3DBLA1-TR is a 1-gigabit DDR2 Synchronous Dynamic Random-Access Memory ...
Package: T&R | MOQ: 2500 | MPQ: 2500

IS46DR16640C-25DBLA2-TR / ​The IS46DR16640C-25DBLA2-TR is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at a clock frequency of up to 400 MHz, delivering data transfer rates up to 800 megabits per second per pin. The device requires a supply voltage between 1.7V and 1.9V and offers an access time of 400 picoseconds. It features a 4-bit prefetch architecture and supports a write cycle time of 15 nanoseconds. The SDRAM includes eight internal banks for concurrent operations and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features include on-die termination (ODT), automatic and controlled precharge commands, auto-refresh and self-refresh modes, and a refresh interval of 7.8 µs. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within an industrial temperature range of -40°C to 105°C, making it suitable for various applications requiring high-speed and reliable memory solutions. ​
IS46DR16640C-25DBLA2-TR

Description: ​The IS46DR16640C-25DBLA2-TR is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access ...
Package: T&R | MOQ: 2500 | MPQ: 2500

IS46DR16640C-25DBLA2 / ​The IS46DR16640C-25DBLA2 is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at a clock frequency of up to 400 MHz, delivering data transfer rates up to 800 megabits per second per pin. The device requires a supply voltage between 1.7V and 1.9V and offers an access time of 400 picoseconds. It features a 4-bit prefetch architecture and supports a write cycle time of 15 nanoseconds. The SDRAM includes eight internal banks for concurrent operations and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features include on-die termination (ODT), automatic and controlled precharge commands, auto-refresh and self-refresh modes, and a refresh interval of 7.8 µs. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within an industrial temperature range of -40°C to 105°C, making it suitable for various applications requiring high-speed and reliable memory solutions. ​
IS46DR16640C-25DBLA2

Description: ​The IS46DR16640C-25DBLA2 is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Mem ...
Package: TRAY | MOQ: 418 | MPQ: 209

IS46DR16640B-25EBLA1 / ​The IS46DR16640B-25EBLA1 is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at clock frequencies up to 400 MHz, delivering data transfer rates up to 800 megabits per second per pin. The device requires a supply voltage between 1.7V and 1.9V and offers an access time of 400 picoseconds. It features a 4-bit prefetch architecture and supports programmable CAS latencies of 3, 4, 5, 6, and 7, along with programmable additive latencies from 0 to 6. The SDRAM includes eight internal banks for concurrent operations and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features include on-die termination (ODT), automatic and controlled precharge commands, auto-refresh and self-refresh modes, and a refresh interval of 7.8 µs. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within an industrial temperature range of -40°C to 85°C, making it suitable for various applications requiring high-speed and reliable memory solutions. ​
IS46DR16640B-25EBLA1

Description: ​The IS46DR16640B-25EBLA1 is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Mem ...
Package: TRAY | MOQ: 418 | MPQ: 209

IS43DR16640C-25DBLI / ​The IS43DR16640C-25DBLI is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at a clock frequency of up to 400 MHz, delivering data transfer rates up to 800 megabits per second per pin. The device requires a supply voltage between 1.7V and 1.9V and offers an access time of 400 picoseconds. It features a 4-bit prefetch architecture and supports a write cycle time of 15 nanoseconds. The SDRAM includes eight internal banks for concurrent operations and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features include on-die termination (ODT), automatic and controlled precharge commands, auto-refresh and self-refresh modes, and a refresh interval of 7.8 µs. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within an industrial temperature range of -40°C to 85°C, making it suitable for various applications requiring high-speed and reliable memory solutions. ​
IS43DR16640C-25DBLI

Description: ​The IS43DR16640C-25DBLI is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memo ...
Package: TRAY | MOQ: 418 | MPQ: 209

IS43DR16640C-25DBL / ​The IS43DR16640C-25DBL is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at a clock frequency of up to 400 MHz, delivering data transfer rates up to 800 megabits per second per pin. The device requires a supply voltage between 1.7V and 1.9V and offers an access time of 400 picoseconds. It features a 4-bit prefetch architecture and supports a write cycle time of 15 nanoseconds. The SDRAM includes eight internal banks for concurrent operations and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features include on-die termination (ODT), automatic and controlled precharge commands, auto-refresh and self-refresh modes, and a refresh interval of 7.8 µs. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within a temperature range of 0°C to 85°C, making it suitable for various applications requiring high-speed and reliable memory solutions. ​
IS43DR16640C-25DBL

Description: ​The IS43DR16640C-25DBL is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memor ...
Package: TRAY | MOQ: 418 | MPQ: 209

IS43DR16640B-25EBL / The IS43DR16640B-25EBL is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at clock frequencies up to 400 MHz, achieving data transfer rates up to 800 megabits per second per pin. The device functions within a supply voltage range of 1.7V to 1.9V and offers an access time of 450 picoseconds. It features a 4-bit prefetch architecture and supports programmable CAS latencies of 3, 4, 5, 6, and 7, along with programmable additive latencies from 0 to 6. The SDRAM includes eight internal banks for concurrent operation and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features include on-die termination (ODT), automatic and controlled precharge commands, auto-refresh and self-refresh modes, and a refresh interval of 7.8 µs. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within an industrial temperature range of 0°C to 70°C, making it suitable for various applications requiring high-speed and reliable memory solutions. ​Alternative P/N: IS43DR16640B-25EBLI
IS43DR16640B-25EBL

Description: The IS43DR16640B-25EBL is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory ( ...
Package: TRAY | MOQ: 418 | MPQ: 209

IS43DR16640B-25DBLI / ​The IS43DR16640B-25DBLI is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at clock frequencies up to 400 MHz, delivering data transfer rates up to 800 megabits per second per pin. The device functions within a supply voltage range of 1.7V to 1.9V and offers an access time of 400 picoseconds. It features a 4-bit prefetch architecture and supports programmable CAS latencies of 3, 4, 5, 6, and 7, along with programmable additive latencies from 0 to 6. The SDRAM includes eight internal banks for concurrent operation and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features comprise on-die termination (ODT), off-chip driver (OCD) impedance adjustment, and automatic and controlled precharge commands. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within a temperature range of -40°C to +85°C, making it suitable for various industrial applications requiring high-speed and reliable memory solutions. ​
IS43DR16640B-25DBLI

Description: ​The IS43DR16640B-25DBLI is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memo ...
Package: TRAY | MOQ: 418 | MPQ: 209

EM68C16CWQG-25IH / ​The EM68C16CWQG-25IH is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Etron Technology, organized as 64 million words by 16 bits (64M x 16). Designed for high-performance applications, it operates at a clock frequency of 400 MHz, achieving data transfer rates up to 800 megabits per second per pin. The device operates within a supply voltage range of 1.7V to 1.9V and offers an access time of 400 picoseconds. It features a write cycle time of 15 nanoseconds and is housed in an 84-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 8 x 12.5 mm. With an operating temperature range from -40°C to +95°C, the EM68C16CWQG-25IH is suitable for various industrial applications requiring reliable and efficient memory solutions. ​
EM68C16CWQG-25IH

Description: ​The EM68C16CWQG-25IH is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory ...
Package: T&R | MOQ: 2500 | MPQ: 2500

AS4C64M16D2A-25BIN / ​The AS4C64M16D2A-25BIN is a high-speed, 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Alliance Memory, organized as 64 million words by 16 bits (64M x 16). Designed for high-performance applications, it features a double-data-rate architecture with an 8n prefetch, enabling data transfer rates up to 400 MHz. The device operates with a supply voltage range of 1.7V to 1.9V and supports fully synchronous operations with a differential clock (CK and CK#). It includes eight internal banks for concurrent operation and offers programmable CAS latencies of 3, 4, and 5. Additional features encompass bidirectional single/differential data strobes (DQS and DQS#), on-die termination (ODT), off-chip driver (OCD) impedance adjustment, and automatic self-refresh with a refresh period of 7.8 µs. The AS4C64M16D2A-25BIN is housed in an 84-ball FBGA package and operates within an industrial temperature range of -40°C to 95°C, making it suitable for various applications requiring reliable and efficient memory solutions. T&R Part Number: ​AS4C64M16D2A-25BINTR
AS4C64M16D2A-25BIN

Description: ​The AS4C64M16D2A-25BIN is a high-speed, 1-gigabit (Gb) DDR2 Synchronous Dynamic Random- ...
Package: TRAY | MOQ: 418 | MPQ: 209

M24M01-RMN6TP / ​The M24M01-RMN6TP is a 1 Mbit (128 K x 8) EEPROM (Electrically Erasable Programmable Read-Only Memory) from STMicroelectronics, featuring an I²C interface. It is suitable for applications requiring non-volatile data storage with moderate speed and low power consumption.​
M24M01-RMN6TP

Description: ​The M24M01-RMN6TP is a 1 Mbit (128 K x 8) EEPROM (Electrically Erasable Programmable Re ...
Package: T&R | MOQ: 2500 | MPQ: 2500

AT24C02D-XHM-B / The AT24C02D-XHM-B is a 2 Kbit (256 x 8-bit) serial Electrically Erasable Programmable Read-Only Memory (EEPROM) from Microchip Technology, utilizing an I²C (2-wire) serial interface. It operates over a supply voltage range of 1.7V to 3.6V and supports clock frequencies up to 1 MHz, making it suitable for high-speed applications. The device is housed in an 8-lead Thin Shrink Small Outline Package (TSSOP), which is ideal for space-constrained designs. It features low power consumption, with typical read and write currents of 0.15 mA and 0.2 mA respectively, and a standby current as low as 0.1 µA. The EEPROM ensures reliable data retention for over 100 years and supports more than 1 million erase/write cycles, making it suitable for industrial and consumer applications requiring dependable non-volatile memory storage.
AT24C02D-XHM-B

Description: The AT24C02D-XHM-B is a 2 Kbit (256 x 8-bit) serial Electrically Erasable Programmable Rea ...
Package: TUBE | MOQ: 1000 | MPQ: 100

EPC2LI20N / The EPC2LI20N is a high-performance, in-system programmable configuration memory device from Intel, designed for use with SRAM-based FPGAs. Featuring a 1.6Mb memory size organized as 1,695,680 bits, it supports both 3.3V and 5V power supplies, offering flexibility in various applications. The device operates synchronously with a clock frequency of up to 12.5 MHz, ensuring efficient data handling. Packaged in a 20-pin leadless chip carrier (LCC) with J-lead terminals, it is suitable for surface-mount technology (SMT) installations. The EPC2LI20N is RoHS compliant and operates within an industrial temperature range of -40°C to 85°C.
EPC2LI20N

Description: The EPC2LI20N is a high-performance, in-system programmable configuration memory device fr ...
Package: TRAY | MOQ: 196 | MPQ: 196

THGAMVG8T13BAIL / The THGAMVG8T13BAIL is a 32GB e•MMC™ (embedded MultiMediaCard) memory module from Kioxia America, Inc., designed for high-performance data storage in various electronic devices.
THGAMVG8T13BAIL

Description: The THGAMVG8T13BAIL is a 32GB e•MMC™ (embedded MultiMediaCard) memory module from Kiox ...
Package: TRAY | MOQ: 304 | MPQ: 152

24FC1025T-I/SN / EEPROM Memory IC 1Mbit I2C 1 MHz 400 ns, 1.8V ~ 5.5V, 128K x 8
24FC1025T-I/SN

Description: EEPROM Memory IC 1Mbit I2C 1 MHz 400 ns, 1.8V ~ 5.5V, 128K x 8 ...
Package: T&R | MOQ: 3300 | MPQ: 3300

24AA512-I/SN / EEPROM Memory IC 512Kbit I2C 400 kHz 900 ns 8-SOIC
24AA512-I/SN

Description: EEPROM Memory IC 512Kbit I2C 400 kHz 900 ns 8-SOIC ...
Package: TUBE | MOQ: 1000 | MPQ: 100

FM25L16B-GTR / FRAM (Ferroelectric RAM) Memory IC 16Kbit SPI 20 MHz 8-SOIC
FM25L16B-GTR

Description: FRAM (Ferroelectric RAM) Memory IC 16Kbit SPI 20 MHz 8-SOIC ...
Package: T&R | MOQ: 2500 | MPQ: 2500

EPCQ16ASI8N / The EPCQ16ASI8N is a 16 Mb (megabit) serial configuration (Flash) memory from Intel (formerly Altera), commonly used for FPGA configuration storage.
EPCQ16ASI8N

Description: The EPCQ16ASI8N is a 16 Mb (megabit) serial configuration (Flash) memory from Intel (forme ...
Package: T&R | MOQ: 1000 | MPQ: 100

SST25VF020-20-4C-SAE-T / FLASH Memory IC 2Mbit SPI 20 MHz, The SST25VF020-20-4C-SAE-T is a 2 Mbit (256K x 8) SPI serial NOR flash memory device manufactured by Microchip Technology. It is designed for high-speed data storage and retrieval in embedded systems.
SST25VF020-20-4C-SAE-T

Description: FLASH Memory IC 2Mbit SPI 20 MHz, The SST25VF020-20-4C-SAE-T is a 2 Mbit (256K x 8) SPI se ...
Package: T&R | MOQ: 3300 | MPQ: 3300

SST25VF010A-33-4I-SAE-T / FLASH Memory IC 1Mbit SPI 33 MHz, The SST25VF010A-33-4I-SAE-T is a 1 Mbit (128K x 8) SPI serial flash memory device manufactured by Microchip Technology. It is designed for high-speed data storage and retrieval in embedded systems.
SST25VF010A-33-4I-SAE-T

Description: FLASH Memory IC 1Mbit SPI 33 MHz, The SST25VF010A-33-4I-SAE-T is a 1 Mbit (128K x 8) SPI s ...
Package: T&R | MOQ: 3300 | MPQ: 3300

M95010-WMN6TP / This EEPROM is suitable for applications requiring non-volatile memory storage with a high-speed SPI interface. Its compact SO8N package and low power consumption make it ideal for various electronic devices. Please note that the M95010-WMN6TP has been marked as Not Recommended for New Designs (NRND).
M95010-WMN6TP

Description: This EEPROM is suitable for applications requiring non-volatile memory storage with a high ...
Package: T&R | MOQ: 2500 | MPQ: 2500

M93C46-WMN6TP / The M93C46-WMN6TP is a 1Kbit EEPROM memory IC from STMicroelectronics, utilizing a Microwire serial interface. This EEPROM is suitable for applications requiring non-volatile memory storage with a simple serial interface. Its compact 8-SOIC package and low power consumption make it ideal for various electronic devices. M93C46-WMN6P
M93C46-WMN6TP

Description: The M93C46-WMN6TP is a 1Kbit EEPROM memory IC from STMicroelectronics, utilizing a Microwi ...
Package: T&R | MOQ: 2500 | MPQ: 2500

IS61WV25616BLL-10TLI-TR / SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP, 4Mbit, 256K*16
IS61WV25616BLL-10TLI-TR

Description: SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP, 4Mbit, 256K*16 ...
Package: T&R | MOQ: 1000 | MPQ: 1000

AT25SF081B-SSHD-B / FLASH - NOR Memory IC 8Mbit SPI - Quad I/O 108MHz, 2.5V ~ 3.6V, 108 MHz Clk., 1M*8 Memory Org. 8Mbit Memory
AT25SF081B-SSHD-B

Description: FLASH - NOR Memory IC 8Mbit SPI - Quad I/O 108MHz, 2.5V ~ 3.6V, 108 MHz Clk., 1M*8 Memory ...
Package: TUBE | MOQ: 1176 | MPQ: 98

TS4GSDHC4 / Transcend 4 GB SD-Card SDHC CLASS 4 EAR99 MLC SDHC Flash Memory Cards offer a very high storage capacity for high mega pixel still picture cameras and any devices that require it.
TS4GSDHC4

Description: Transcend 4 GB SD-Card SDHC CLASS 4 EAR99 MLC SDHC Flash Memory Cards offer a very high s ...
Package: TRAY | MOQ: 100 | MPQ: 10

TS4GSDC410M / 4GB SD Card SDHC UHS-I Class 10 Built with top-quality MLC NAND flash chips, Transcend SD/SDHC410M memory cards can endure operating temperatures from -25°C to 85°C and set a new standard for consistent, long-term performance even in the harshest conditions. Moreover, these cards offer high-speed data transfer rates to satisfy the demanding performance and reliability requirements of embedded systems, such as transportation, telecommunication, and IoT applications.
TS4GSDC410M

Description: 4GB SD Card SDHC UHS-I Class 10 Built with top-quality MLC NAND flash chips, Transcend SD/ ...
Package: TRAY | MOQ: 100 | MPQ: 10

SDSQUNC-016G-AN6MA / SDSQUNC-016G-AN6MA 16GB Sandisk Ultra Series Micro SD HC 48MB/s Class 10 Memory Card + SD Card Adapter, Compatible with all microSDHCTM and microSDXCTM supporting host devices, -13°F to 185°F (-25°C to 85°C), Operating temperature, microSDTM: 0.59in x 0.43in x 0.03in (14.99mm x 10.92mm x 1.02mm), SD adapter: 1.26in x 0.94in x 0.08in (24mm x 32mm x 2.1mm), 16GB: Up to 98MB/s read speed; write speed lower
SDSQUNC-016G-AN6MA

Description: SDSQUNC-016G-AN6MA 16GB Sandisk Ultra Series Micro SD HC 48MB/s Class 10 Memory Card + SD ...
Package: TRAY | MOQ: 500 | MPQ: 100

AT24C256C-SSHL-T / I²C-Compatible TWI Serial EEPROM 256‑Kbit (32,768*8), Vcc = 1.7V-5.5V, Schmitt Triggers, Filtered Inputs for Noise Suppression, ESD Protection >4,000V
AT24C256C-SSHL-T

Description: I²C-Compatible TWI Serial EEPROM 256‑Kbit (32,768*8), Vcc = 1.7V-5.5V, Schmitt Triggers ...
Package: T&R | MOQ: 4000 | MPQ: 4000

93C46WP (M93C46-WMN6TP) / 1024bits, 128bytes(8bit), 64words(16bit), The M93C46 is electrically erasable programmable memory (EEPROM) devices accessed through the MICROWIRE™ bus protocol. The memory array can be configured either in bytes (x8b) or in words (x16b). The M93Cx6-W devices operate within a voltage supply range from 2.5 V to 5.5 V and the M93Cx6-R devices operate within a voltage supply range from 1.8 V to 5.5 V. All these devices operate with a clock frequency of 2 MHz (or less), over an ambient temperature range of - 40 ° C / + 85 ° C.
93C46WP (M93C46-WMN6TP)

Description: 1024bits, 128bytes(8bit), 64words(16bit), The M93C46 is electrically erasable programmable ...
Package: T&R | MOQ: 2500 | MPQ: 2500

CAT24C512WI-GT3 / CAT24C512WI-GT3 EEPROM Memory IC 512Kbit I2C 1MHz/900ns 8-SOIC, 1.8 V to 5.5 V Supply Voltage Range, 128−Byte Page Write Buffer, Low Power CMOS Technology, 1,000,000 Program/Erase Cycles, 100 Year Data Retention, Supports Standard, Fast and Fast−Plus I²C Protocol
CAT24C512WI-GT3

Description: CAT24C512WI-GT3 EEPROM Memory IC 512Kbit I2C 1MHz/900ns 8-SOIC, 1.8 V to 5.5 V Supply Volt ...
Package: T&R | MOQ: 3000 | MPQ: 3000

AT24C512C-SSHD-B / I2C-Compatible (Two-Wire) Serial EEPROM 512‑Kbit (65,536 x 8), 1MHz, 550 ns
AT24C512C-SSHD-B

Description: I2C-Compatible (Two-Wire) Serial EEPROM 512‑Kbit (65,536 x 8), 1MHz, 550 ns ...
Package: TUBE | MOQ: 1000 | MPQ: 100

AT24C32D-SSHM-T / I2C-Compatible (2-Wire) Serial EEPROM 32‑Kbit, VCC = 1.7V to 5.5V, Internally Organized as 4,096 x 8 (32K)
AT24C32D-SSHM-T

Description: I2C-Compatible (2-Wire) Serial EEPROM 32‑Kbit, VCC = 1.7V to 5.5V, Internally Organized ...
Package: T&R | MOQ: 4000 | MPQ: 4000

FM24CL04B-GTR / FRAM (Ferroelectric RAM) Memory IC 4Kbit I2C 1 MHz 550 ns 8-SOIC
FM24CL04B-GTR

Description: FRAM (Ferroelectric RAM) Memory IC 4Kbit I2C 1 MHz 550 ns 8-SOIC ...
Package: T&R | MOQ: 2500 | MPQ: 2500













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