All Products Memory

93LC46B-I/P / The 93LC46B-I/P is a 1Kbit (1024-bit) serial EEPROM designed for non-volatile data storage using a Microwire-compatible 3-wire interface. It operates with a supply voltage range of 2.5 V to 5.5 V and supports both 8-bit and 16-bit data organization selectable via the ORG pin. The device offers clock frequencies up to approximately 2 MHz and supports byte, word, and page write operations with a typical write cycle time of around 5 ms. It features hardware write protection, low power consumption, and high endurance (typically up to 1 million write cycles) with long data retention. The 93LC46B-I/P is commonly used in configuration storage, industrial electronics, automotive systems, and embedded applications requiring simple and reliable serial EEPROM memory.
93LC46B-I/P

Description: The 93LC46B-I/P is a 1Kbit (1024-bit) serial EEPROM designed for non-volatile data storage ...
Package: TUBE | MOQ: 1440 | MPQ: 60

AT24C02C-SSHM-T / The AT24C02C-SSHM-T is a 2Kbit (256 × 8) serial EEPROM designed for non-volatile data storage applications. It operates with a supply voltage range of 1.7 V to 5.5 V and communicates via a standard I²C (2-wire) interface with clock speeds up to 1 MHz.<br><br> The device supports byte and page write operations with a typical write cycle time of around 5 ms and provides fast access time (~550 ns). It includes hardware write-protect functionality and supports cascading of up to eight devices on the same I²C bus. <br><br>With low power consumption, high endurance (up to 1 million write cycles), and long data retention (up to 100 years), the AT24C02C-SSHM-T is widely used in microcontroller systems, configuration storage, consumer electronics, industrial control, and embedded applications requiring reliable non-volatile memory.
AT24C02C-SSHM-T

Description: The AT24C02C-SSHM-T is a 2Kbit (256 × 8) serial EEPROM designed for non-volatile data sto ...
Package: T&R | MOQ: 4000 | MPQ: 4000

24LC256-I/P / The 24LC256-I/P is a 256 Kbit (32K × 8) serial EEPROM memory designed for non-volatile data storage applications. It operates with a supply voltage range of approximately 2.5 V to 5.5 V and communicates via a standard I²C (2-wire) interface with clock speeds up to 400 kHz.<br><br> The device features a 64-byte page write buffer, allowing efficient data writing, and supports both random and sequential read operations. It includes hardware write-protect functionality and supports up to 1 million erase/write cycles with long data retention. <br><br> With low power consumption (microamp-level standby current) and the ability to cascade multiple devices on the same bus, it is widely used in microcontroller systems, data logging, configuration storage, industrial electronics, and embedded applications requiring reliable non-volatile memory.
24LC256-I/P

Description: The 24LC256-I/P is a 256 Kbit (32K × 8) serial EEPROM memory designed for non-volatile da ...
Package: TUBE | MOQ: 1320 | MPQ: 60

W25Q32JVSSIQ / ​The W25Q32JVSSIQ is a 32-megabit (Mb) serial NOR flash memory device from Winbond Electronics, designed for high-speed data storage in space-constrained applications. It operates with a supply voltage ranging from 2.7 V to 3.6 V, making it suitable for various power configurations. The device supports standard SPI as well as high-performance Dual and Quad SPI modes, enabling data transfer rates up to 133 MHz. Its memory array is organized into 16,384 programmable pages of 256 bytes each, with up to 256 bytes programmable at a time. Erase operations can be performed on sectors (4 KB), blocks (32 KB and 64 KB), or the entire chip, providing flexibility for different application requirements. Additional features include a unique ID, one-time programmable (OTP) area, and programmable output driver strength, enhancing security and customization options. The W25Q32JVSSIQ is available in an 8-pin SOIC package, suitable for surface-mount applications. ​
W25Q32JVSSIQ

Description: ​The W25Q32JVSSIQ is a 32-megabit (Mb) serial NOR flash memory device from Winbond Elect ...
Package: TUBE | MOQ: 900 | MPQ: 90

M24M01-RMN6TP / ​The M24M01-RMN6TP is a 1 Mbit (128 K x 8) EEPROM (Electrically Erasable Programmable Read-Only Memory) from STMicroelectronics, featuring an I²C interface. It is suitable for applications requiring non-volatile data storage with moderate speed and low power consumption.​
M24M01-RMN6TP

Description: ​The M24M01-RMN6TP is a 1 Mbit (128 K x 8) EEPROM (Electrically Erasable Programmable Re ...
Package: T&R | MOQ: 2500 | MPQ: 2500

AT24C02D-XHM-B / The AT24C02D-XHM-B is a 2 Kbit (256 x 8-bit) serial Electrically Erasable Programmable Read-Only Memory (EEPROM) from Microchip Technology, utilizing an I²C (2-wire) serial interface. It operates over a supply voltage range of 1.7V to 3.6V and supports clock frequencies up to 1 MHz, making it suitable for high-speed applications. The device is housed in an 8-lead Thin Shrink Small Outline Package (TSSOP), which is ideal for space-constrained designs. It features low power consumption, with typical read and write currents of 0.15 mA and 0.2 mA respectively, and a standby current as low as 0.1 µA. The EEPROM ensures reliable data retention for over 100 years and supports more than 1 million erase/write cycles, making it suitable for industrial and consumer applications requiring dependable non-volatile memory storage.
AT24C02D-XHM-B

Description: The AT24C02D-XHM-B is a 2 Kbit (256 x 8-bit) serial Electrically Erasable Programmable Rea ...
Package: TUBE | MOQ: 1000 | MPQ: 100

EPC2LI20N / The EPC2LI20N is a high-performance, in-system programmable configuration memory device from Intel, designed for use with SRAM-based FPGAs. Featuring a 1.6Mb memory size organized as 1,695,680 bits, it supports both 3.3V and 5V power supplies, offering flexibility in various applications. The device operates synchronously with a clock frequency of up to 12.5 MHz, ensuring efficient data handling. Packaged in a 20-pin leadless chip carrier (LCC) with J-lead terminals, it is suitable for surface-mount technology (SMT) installations. The EPC2LI20N is RoHS compliant and operates within an industrial temperature range of -40°C to 85°C.
EPC2LI20N

Description: The EPC2LI20N is a high-performance, in-system programmable configuration memory device fr ...
Package: TRAY | MOQ: 196 | MPQ: 196

24FC1025T-I/SN / EEPROM Memory IC 1Mbit I2C 1 MHz 400 ns, 1.8V ~ 5.5V, 128K x 8
24FC1025T-I/SN

Description: EEPROM Memory IC 1Mbit I2C 1 MHz 400 ns, 1.8V ~ 5.5V, 128K x 8 ...
Package: T&R | MOQ: 3300 | MPQ: 3300

24AA512-I/SN / EEPROM Memory IC 512Kbit I2C 400 kHz 900 ns 8-SOIC
24AA512-I/SN

Description: EEPROM Memory IC 512Kbit I2C 400 kHz 900 ns 8-SOIC ...
Package: TUBE | MOQ: 1000 | MPQ: 100

FM25L16B-GTR / FRAM (Ferroelectric RAM) Memory IC 16Kbit SPI 20 MHz 8-SOIC
FM25L16B-GTR

Description: FRAM (Ferroelectric RAM) Memory IC 16Kbit SPI 20 MHz 8-SOIC ...
Package: T&R | MOQ: 2500 | MPQ: 2500

EPCQ16ASI8N / The EPCQ16ASI8N is a 16 Mb (megabit) serial configuration (Flash) memory from Intel (formerly Altera), commonly used for FPGA configuration storage.
EPCQ16ASI8N

Description: The EPCQ16ASI8N is a 16 Mb (megabit) serial configuration (Flash) memory from Intel (forme ...
Package: T&R | MOQ: 1000 | MPQ: 100

SST25VF020-20-4C-SAE-T / FLASH Memory IC 2Mbit SPI 20 MHz, The SST25VF020-20-4C-SAE-T is a 2 Mbit (256K x 8) SPI serial NOR flash memory device manufactured by Microchip Technology. It is designed for high-speed data storage and retrieval in embedded systems.
SST25VF020-20-4C-SAE-T

Description: FLASH Memory IC 2Mbit SPI 20 MHz, The SST25VF020-20-4C-SAE-T is a 2 Mbit (256K x 8) SPI se ...
Package: T&R | MOQ: 3300 | MPQ: 3300

SST25VF010A-33-4I-SAE-T / FLASH Memory IC 1Mbit SPI 33 MHz, The SST25VF010A-33-4I-SAE-T is a 1 Mbit (128K x 8) SPI serial flash memory device manufactured by Microchip Technology. It is designed for high-speed data storage and retrieval in embedded systems.
SST25VF010A-33-4I-SAE-T

Description: FLASH Memory IC 1Mbit SPI 33 MHz, The SST25VF010A-33-4I-SAE-T is a 1 Mbit (128K x 8) SPI s ...
Package: T&R | MOQ: 3300 | MPQ: 3300

M95010-WMN6TP / This EEPROM is suitable for applications requiring non-volatile memory storage with a high-speed SPI interface. Its compact SO8N package and low power consumption make it ideal for various electronic devices. Please note that the M95010-WMN6TP has been marked as Not Recommended for New Designs (NRND).
M95010-WMN6TP

Description: This EEPROM is suitable for applications requiring non-volatile memory storage with a high ...
Package: T&R | MOQ: 2500 | MPQ: 2500

M93C46-WMN6TP / The M93C46-WMN6TP is a 1Kbit EEPROM memory IC from STMicroelectronics, utilizing a Microwire serial interface. This EEPROM is suitable for applications requiring non-volatile memory storage with a simple serial interface. Its compact 8-SOIC package and low power consumption make it ideal for various electronic devices. M93C46-WMN6P
M93C46-WMN6TP

Description: The M93C46-WMN6TP is a 1Kbit EEPROM memory IC from STMicroelectronics, utilizing a Microwi ...
Package: T&R | MOQ: 2500 | MPQ: 2500

IS61WV25616BLL-10TLI-TR / SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP, 4Mbit, 256K*16
IS61WV25616BLL-10TLI-TR

Description: SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP, 4Mbit, 256K*16 ...
Package: T&R | MOQ: 1000 | MPQ: 1000

AT25SF081B-SSHD-B / FLASH - NOR Memory IC 8Mbit SPI - Quad I/O 108MHz, 2.5V ~ 3.6V, 108 MHz Clk., 1M*8 Memory Org. 8Mbit Memory
AT25SF081B-SSHD-B

Description: FLASH - NOR Memory IC 8Mbit SPI - Quad I/O 108MHz, 2.5V ~ 3.6V, 108 MHz Clk., 1M*8 Memory ...
Package: TUBE | MOQ: 1176 | MPQ: 98

AT24C256C-SSHL-T / The AT24C256C-SSHL-T is a 256Kbit non-volatile EEPROM memory organized as 32,768 x 8 bits, featuring a 2-wire I2C-compatible serial interface with clock frequency up to 1 MHz. It operates over a wide supply voltage range of 1.7V to 5.5V and provides fast access time of approximately 550 ns with a maximum write cycle time of 5 ms. The device supports 64-byte page write operations and allows up to eight devices on the same bus using hardware address pins. It offers high endurance of up to 1,000,000 write cycles and data retention up to 100 years, with low standby current typically below 6 µA. The IC includes hardware write protection, Schmitt trigger inputs for noise suppression, and operates over an industrial temperature range of -40°C to +85°C. The SOIC-8 package enables compact surface-mount design, making it suitable for industrial control, embedded systems, data logging, and configuration storage applications.
AT24C256C-SSHL-T

Description: The AT24C256C-SSHL-T is a 256Kbit non-volatile EEPROM memory organized as 32,768 x 8 bits, ...
Package: T&R | MOQ: 4000 | MPQ: 4000

93C46WP (M93C46-WMN6TP) / The M93C46-WMN6TP is a 1Kbit serial EEPROM organized as 128 × 8 or 64 × 16 bits, utilizing the MICROWIRE™ 3-wire serial interface for efficient data communication. It operates over a supply voltage range of 2.5V to 5.5V and supports clock frequencies up to 2 MHz, enabling fast data access in embedded systems . The device features a self-timed write cycle of approximately 5 ms and offers high endurance of over 1 million write cycles with data retention up to 200 years . It includes hardware data protection, sequential read capability, and low power consumption with typical operating current around 2 mA . The EEPROM supports both byte and word organization selectable via ORG pin, providing design flexibility. Operating temperature range is -40°C to +85°C, and the SOIC-8 package allows compact surface-mount integration, making it suitable for industrial control, automotive electronics, configuration storage, and data logging applications.
93C46WP (M93C46-WMN6TP)

Description: The M93C46-WMN6TP is a 1Kbit serial EEPROM organized as 128 × 8 or 64 × 16 bits, utilizi ...
Package: T&R | MOQ: 2500 | MPQ: 2500

CAT24C512WI-GT3 / The CA45C106M035R is a solid tantalum chip capacitor designed for stable performance in demanding electronic applications, offering a capacitance of 10 µF with ±20% tolerance and a rated voltage of 35V. It utilizes tantalum pentoxide dielectric technology, providing high capacitance density, low leakage current typically in the microampere range, and long-term stability. The device features relatively low ESR, enabling efficient decoupling and filtering in power supply circuits and DC-DC converters. It operates over a wide temperature range of -55°C to +125°C, ensuring reliable performance under harsh environmental conditions. The Case-C SMD package (approximately 6.0 × 3.2 mm) supports compact PCB layouts and automated assembly processes. It is suitable for industrial electronics, power management systems, and general-purpose filtering and bypass applications requiring reliable and stable capacitance.
CAT24C512WI-GT3

Description: The CA45C106M035R is a solid tantalum chip capacitor designed for stable performance in de ...
Package: T&R | MOQ: 3000 | MPQ: 3000

AT24C512C-SSHD-B / The AT24C512C-SSHD-B is a 512Kbit non-volatile serial EEPROM organized as 65,536 x 8 bits, featuring a 2-wire I2C-compatible interface with clock frequency up to 1 MHz. It operates over a supply voltage range of 2.5V to 5.5V and provides fast access time of approximately 550 ns with a maximum write cycle time of 5 ms. The device supports 128-byte page write operations and allows up to eight devices on the same I2C bus using address pins. It offers high endurance of up to 1 million write cycles and data retention up to 100 years, with low standby current in the microampere range. The IC includes hardware write-protect functionality and operates over a temperature range of -40°C to +85°C. Packaged in SOIC-8, it is suitable for industrial control, embedded systems, configuration storage, and data logging applications.
AT24C512C-SSHD-B

Description: The AT24C512C-SSHD-B is a 512Kbit non-volatile serial EEPROM organized as 65,536 x 8 bits, ...
Package: TUBE | MOQ: 1000 | MPQ: 100

AT24C32D-SSHM-T / The AT24C32D-SSHM-T is a 32Kbit non-volatile EEPROM memory organized as 4096 x 8 bits, featuring a standard I2C-compatible 2-wire serial interface with clock frequency up to 1 MHz. It operates over a wide supply voltage range of 1.7V to 5.5V and provides a fast access time of approximately 550 ns with a typical write cycle time of 5 ms. The device supports page write operations, low standby current in the microampere range, and high endurance of up to 1 million write cycles with data retention exceeding 100 years. It includes hardware write protection and supports multiple device addressing on the same bus. Operating temperature range is -40°C to +85°C, and the SOIC-8 package enables compact surface-mount integration, making it suitable for data logging, configuration storage, industrial control, and embedded system applications.
AT24C32D-SSHM-T

Description: The AT24C32D-SSHM-T is a 32Kbit non-volatile EEPROM memory organized as 4096 x 8 bits, fea ...
Package: T&R | MOQ: 4000 | MPQ: 4000

FM24CL04B-GTR / The FM24CL04B-GTR is a 4Kbit non-volatile Ferroelectric RAM (FRAM) memory organized as 512 x 8 bits, featuring an I2C interface with clock frequencies up to 1 MHz. It operates over a supply voltage range of 2.7V to 3.6V and provides virtually unlimited read/write endurance (10¹⁴ cycles) with data retention up to 151 years. The device offers fast write speeds with no write delays, low operating current (typically <200 µA active), and ultra-low standby current in the microampere range. It supports standard I2C addressing and is fully compatible with EEPROM pinouts while eliminating write cycle limitations. The SOIC-8 package enables compact PCB integration for industrial, automotive, and data logging applications.
FM24CL04B-GTR

Description: The FM24CL04B-GTR is a 4Kbit non-volatile Ferroelectric RAM (FRAM) memory organized as 512 ...
Package: T&R | MOQ: 2500 | MPQ: 2500













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