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TBU-DT085-200-WH / The TBU-DT085-200-WH by Bourns is a compact, surface-mount dual unidirectional Transient Blocking Unit (TBU) designed for high-speed surge and overcurrent protection. Housed in a small DFN-4 package (5 × 5 mm), it activates in under 1 µs when the line current exceeds its trigger threshold, effectively blocking surges without shunting them to ground. This resettable device supports a peak impulse voltage (V_imp) of 850 V, maintains continuous RMS voltage up to 425 V, and triggers at 200 mA (nominal). It features a typical on-state resistance of 7.4 Ω and automatically resets once the voltage falls below its reset threshold (10–18 V). With an operating temperature range of –40 °C to +125 °C and UL listing (E315805), it’s well-suited for safeguarding Ethernet ports, protection modules, and general electronics in industrial and communication applications.
TBU-DT085-200-WH

Description: The TBU-DT085-200-WH by Bourns is a compact, surface-mount dual unidirectional Transient B ...
Package: T&R | MOQ: 3000 | MPQ: 3000

DSPIC33EP512MU810-I/PT / dsPIC dsPIC™ 33EP Microcontroller IC 16-Bit 70 MIPs 512KB (170K x 24) FLASH 100-TQFP (12*12mm) DSPIC33EP512MU810-I/PT, DSPIC33EP512MU810IPT
DSPIC33EP512MU810-I/PT

Description: dsPIC dsPIC™ 33EP Microcontroller IC 16-Bit 70 MIPs 512KB (170K x 24) FLASH 100-TQFP (12 ...
Package: TRAY | MOQ: 119 | MPQ: 119

BSP752RXUMA2 / Smart High-Side Power Switch, Overload protection, Current limitation, Short circuit protection, Thermal shutdown with restart, Overvoltage protection (including load dump), Fast demagnetization of inductive loads, Reverse battery protection with external resistor, Open drain diagnostic output for overtemperature and short circuit, Open load detection in OFF-State with external resistor, CMOS compatible input, Loss of GND and loss of Vbb protection, ESD - Protection, Very low standby current, AEC Qualified, Green Product (RoHS compliant)
BSP752RXUMA2

Description: Smart High-Side Power Switch, Overload protection, Current limitation, Short circuit prote ...
Package: T&R | MOQ: 2500 | MPQ: 2500

MAX485EESA T / The MAX485EESA+T from Analog Devices (originally Maxim Integrated) is a rugged half-duplex RS-485/RS-422 transceiver in an 8-pin SOIC package, optimized for industrial environments. Operating from a single 5 V supply (4.75–5.25 V), it supports data rates up to 2.5 Mbps and includes built-in slew-rate control to minimize EMI and signal reflections. Its robust design offers ±15 kV Human-Body Model ESD protection and wide common-mode range (–7 V to +12 V), ensuring reliable communication in harsh conditions. The device draws low quiescent current (~300 µA) when idle, features receiver hysteresis (~70 mV) for noise immunity, and includes fault protection on driver outputs . With thermal shutdown and current-limited drivers, it’s ideal for robust, long-distance serial communications in industrial, automation, or instrumentation systems.
MAX485EESA T

Description: The MAX485EESA+T from Analog Devices (originally Maxim Integrated) is a rugged half-duplex ...
Package: T&R | MOQ: 2500 | MPQ: 2500

ADM7150ACPZ-5.0-R7 / The ADM7150ACPZ‑5.0‑R7 from Analog Devices is a high-performance LDO regulator delivering a fixed 5 V output at up to 800 mA from a wide 4.5–16 V input (up to 50 V in some specs), housed in a compact 8‑lead LFCSP with exposed pad. It boasts ultra‑low noise (<1 µV RMS across 100 Hz–100 kHz), excellent PSRR (>90 dB at 1–100 kHz, around 62 dB at 1 MHz), and tight output accuracy (±1 % initial; ±2 % across line, load, and temperature). With a low dropout of ~0.6 V at 800 mA, fast transient response with ceramic capacitors, and built‑in protections including current limit, thermal shutdown, and shutdown cutoff (<0.1 µA), it is ideal for noise-sensitive applications like RF, PLLs, and VCOs in compact systems
ADM7150ACPZ-5.0-R7

Description: The ADM7150ACPZ‑5.0‑R7 from Analog Devices is a high-performance LDO regulator deliver ...
Package: T&R | MOQ: 1500 | MPQ: 1500

TPS62163DSGR / The TPS62163DSGR from Texas Instruments is a highly integrated, synchronous 1 A step-down DC‑DC converter in an 8-pin WSON (DSG) package with exposed thermal pad. Operating from 3 V to 17 V input, it delivers a fixed 5 V output at up to 1 A, using high-frequency DCS‑Control™ switching (~2.25 MHz) for fast transient response and compact external components. It includes a power-save mode that seamlessly engages at light loads to maintain high efficiency with a low quiescent current (~17 µA), supports 100 % duty cycle at low VIN, and features power-good signaling, short-circuit and over-temperature protection, all in a compact 2 × 2 mm footprint rated from –40 °C to +125 °C.
TPS62163DSGR

Description: The TPS62163DSGR from Texas Instruments is a highly integrated, synchronous 1 A step-dow ...
Package: T&R | MOQ: 3000 | MPQ: 3000

TPS54361QDPRTQ1 / The TPS54361QDPRTQ1 is an automotive-grade, 3.5 A step-down DC–DC converter in a compact 10-pin WSON with thermal pad, supporting wide input voltage from 4.5 V to 60 V and designed to survive 65 V load-dump pulses per ISO 7637. It features current-mode control, adjustable switching frequency (100 kHz–2.5 MHz) that can be externally synchronized, and a pulse-skipping Eco-mode™ for excellent efficiency at light loads. With a precision 0.8 V ±1 % reference, adjustable soft-start, sequencing, UVLO, cycle-by-cycle current limiting, frequency foldback, thermal shutdown, and open-drain power-good output, it provides robust protection and control. Ultra-low 152 µA quiescent current (2 µA in shutdown) and low 87 mΩ high-side MOSFET resistance ensure high performance in compact automotive and industrial systems rated from –40 °C to +125 °C.
TPS54361QDPRTQ1

Description: The TPS54361QDPRTQ1 is an automotive-grade, 3.5 A step-down DC–DC converter in a compa ...
Package: T&R | MOQ: 1000 | MPQ: 250

TPS22975DSGR / The TPS22975DSGR is a compact high-current load switch from Texas Instruments, packaged in an 8‑pin WSON (DSG) package with an exposed thermal pad. It integrates a single N‑channel MOSFET capable of handling up to 6 A continuous current, with a remarkably low on‑resistance of just 16 mΩ over a wide input range (0.6–5.7 V VIN, 2.5–5.7 V VBIAS). The device supports low-voltage logic control (1.2–3.3–5 V), offers configurable slew-rate to manage inrush current, optional quick-output discharge, and includes thermal shutdown and robust ESD protection (2 kV HBM, 1 kV CDM). With ultralow quiescent current (~37 µA) and wide temperature tolerance (–40 °C to +105 °C), it is ideal for efficient power-path management in space-constrained, high-performance systems.
TPS22975DSGR

Description: The TPS22975DSGR is a compact high-current load switch from Texas Instruments, packaged in ...
Package: T&R | MOQ: 3000 | MPQ: 3000

TPS3824-33DBVR / The TPS3824-33DBVR from Texas Instruments is a compact voltage supervisor with an integrated watchdog timer, designed to monitor 3.3 V systems. Housed in a small SOT-23-5 package, it features a precision undervoltage threshold (~2.93 V), a fixed 200 ms power-on reset delay, and both active-high and active-low push-pull reset outputs. The built-in watchdog timer resets the system if no activity is detected on the WDI pin within approximately 1.6 seconds, enhancing reliability. With ultra-low quiescent current (~15 µA), fast reset response, and operation from 1.1 V to 5.5 V, it is ideal for low-power, space-constrained applications.
TPS3824-33DBVR

Description: The TPS3824-33DBVR from Texas Instruments is a compact voltage supervisor with an integrat ...
Package: T&R | MOQ: 3000 | MPQ: 3000

TCAN1042HVDR / The TCAN1042HVDR is an automotive-grade CAN/ CAN FD transceiver in an 8‑pin SOIC package, rated for operation from –55 °C to +125 °C. It supports classic CAN and CAN FD at up to 2 Mbps, with
TCAN1042HVDR

Description: The TCAN1042HVDR is an automotive-grade CAN/ CAN FD transceiver in an 8‑pin SOIC packa ...
Package: T&R | MOQ: 2500 | MPQ: 2500

TDC7200PWR / The TDC7200PWR is a high-precision Time‑to‑Digital Converter (TDC) designed for accurate Time‑of‑Flight (ToF) measurements in ultrasonic, magnetostrictive, LIDAR, flow meter, and related applications. Packaged in a 14‑pin TSSOP (PW) with PowerPAD, it operates from a 2.0–3.6 V supply and covers an extended temperature range of –40 °C to +85 °C. Featuring a time resolution of 55 ps and a standard deviation of just 35 ps, it supports two measurement ranges—Mode 1 for 12 ns–500 ns and Mode 2 for 250 ns–8 ms—to handle both short and long ToF events reliably. The device supports up to five STOP signals, allowing flexibility in selecting the best echo for more accurate readings. It includes an autonomous multi-cycle averaging mode and ultra-low power consumption—only 0.5 µA at 2 samples/sec—ideal for battery-operated systems. Communication is via SPI, and the device incorporates an internal self-calibrated timebase that mitigates temperature and drift effects, ensuring picosecond-level accuracy
TDC7200PWR

Description: The TDC7200PWR is a high-precision Time‑to‑Digital Converter (TDC) designed for accura ...
Package: T&R | MOQ: 2000 | MPQ: 2000

TPS54325PWPR / The TPS54325PWPR from Texas Instruments is a robust 3 A, synchronous step-down converter in a 14‑pin HTSSOP (PowerPAD) package. It features D‑CAP2™ adaptive on‑time control for fast transient response and ultra-low output ripple, even with ceramic capacitors. You will get a 700 kHz switching frequency, integrated low RDS(on) MOSFETs (120 mΩ high-side and 70 mΩ low-side), and operation across a wide input range (VIN: 2–18 V, VCC: 4.5–18 V). Output voltage is adjustable from 0.76 to 5.5 V, with soft-start and pre‑biased startup capabilities. It boasts power-good signaling, cycle-by-cycle over‑current protection, under-voltage and over-voltage protections, UVLO, thermal shutdown, and draws under 10 µA in shutdown mode. Thanks to its integrated FETs and advanced control scheme, it delivers high efficiency, low component count, and a compact footprint—ideal for power-sensitive or board‑space‑constrained applications
TPS54325PWPR

Description: The TPS54325PWPR from Texas Instruments is a robust 3 A, synchronous step-down converter ...
Package: T&R | MOQ: 2000 | MPQ: 2000

KSM32RS4/32HCR / Kingstons KSM32RS4/32HCR is a 4G x 72-bit (32GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM) registered w/ parity, 1Rx4, ECC, memory module, based on eighteen 4G x 4-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22-22-22 at 1.2V. Each 288-pin DIMM uses gold contact fingers
KSM32RS4/32HCR

Description: Kingstons KSM32RS4/32HCR is a 4G x 72-bit (32GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM) r ...
Package: TRAY | MOQ: 20 | MPQ: 1

KSM32RD8/32MFR / Kingstons KSM32RD8/32MFR is a 4G x 72-bit (32GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM) registered w/ parity, 2Rx8, ECC, memory module, based on eighteen 2G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22-22-22 at 1.2V. Each 288-pin DIMM uses gold contact fingers.
KSM32RD8/32MFR

Description: Kingstons KSM32RD8/32MFR is a 4G x 72-bit (32GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM) r ...
Package: TRAY | MOQ: 20 | MPQ: 1

STM8L152M8T6TR / The STM8L152M8T6TR is an ultra‑low‑power 8‑bit microcontroller from ST STM8L series, featuring a high‑performance STM8 CPU clocked up to 16 MHz (≈16 MIPS) and a compact 80‑pin LQFP package. It integrates 64 KB Flash, 2 KB EEPROM (with ECC & RWW), and 4 KB SRAM, alongside rich analog/peripheral options—including a 12‑bit ADC (up to 28 channels), two 12‑bit DACs, dual comparators, and a DMA controller. Connectivity includes SPI, I²C (up to 400 kHz), IrDA, and three USARTs (with ISO 7816 support), plus a real‑time clock and up to 67 GPIOs. It supports five low‑power modes, from “Low‑power run” (~5.9 µA) down to “Halt” (~400 nA), with fast wake-up (~4.7 µs) and ultra-low leakage. Its power supply spans 1.8–3.6 V (down to 1.65 V in power-down), and it operates from −40 °C to +85 °C (industrial grade). Additional features include multiple timers (general‑purpose, motor control, watchdogs), LCD driver support, brown‑out/reset supervision, clock security, and SWIM-based in-circuit debug/programming.
STM8L152M8T6TR

Description: The STM8L152M8T6TR is an ultra‑low‑power 8‑bit microcontroller from ST STM8L series, ...
Package: T&R | MOQ: 1000 | MPQ: 1000

TCAN1044AVDRBRQ1 / The TCAN1044AVDRBRQ1 is a robust, automotive-grade CAN FD transceiver designed for demanding in-vehicle environments. It meets ISO 11898‑2:2016, supporting both classical CAN and CAN FD up to 5 Mbps (with simplified networks reaching 8 Mbps), and passes AEC‑Q100 Grade 1 qualification. It operates from a 4.5 V to 5.5 V VCC supply, with VIO allowing logic-level interfacing from 1.7 V to 5.5 V, making it compatible with a wide range of microcontrollers. The device boasts extensive fault protection—bus-fault protection up to ±58 V, receiver common-mode range ±12 V, undervoltage, thermal-shutdown, and a TXD dominant-timeout feature to prevent bus lock-up. It offers a standby mode with wake-on-CAN support and manages power-down gracefully (high-impedance bus/logic pins, glitch-free hot-plugging). Available in compact 8-pin SOIC, VSON-8, and SOT‑23 packages, it is optimized for minimal footprint and automated optical inspection. With typical 49 mA supply current and full operation from –40 °C to +150 °C junction temperature, the TCAN1044AVDRBRQ1 is ideal for automotive body controls, gateways, ADAS, and infotainment systems.
TCAN1044AVDRBRQ1

Description: The TCAN1044AVDRBRQ1 is a robust, automotive-grade CAN FD transceiver designed for deman ...
Package: T&R | MOQ: 3000 | MPQ: 3000

AD8418AWBRMZ-RL / The AD8418AWBRMZ-RL is a high-precision, bidirectional current sense amplifier designed for automotive and industrial applications. It features a fixed gain of 20 V/V, ultra-low input offset voltage (±200 µV max), minimal drift (~0.1 µV/°C), and a wide operating common-mode voltage range from –2 V to +70 V. With excellent common-mode rejection (up to 100 dB) and integrated EMI filtering, it delivers accurate current measurements even in noisy, high-voltage environments. The device supports single-supply operation (2.7 V–5.5 V), offers both unidirectional and bidirectional sensing via dual VREF pins, and is AEC-Q100 qualified for automotive use. Packaged in a compact 8-lead MSOP and supplied on tape and reel, the AD8418AWBRMZ-RL is ideal for motor control, battery management, and power system diagnostics.
AD8418AWBRMZ-RL

Description: The AD8418AWBRMZ-RL is a high-precision, bidirectional current sense amplifier designed fo ...
Package: T&R | MOQ: 3000 | MPQ: 3000

M321RYGA0PB2-CCP / This is a 96 GB DDR5‑6400 MT/s Registered DIMM (RDIMM), with dual-rank ×4 organization and an 80-bit data width (72 bits + 8-bit ECC), optimized for server-grade workloads. It delivers PC5‑51200 bandwidth (~51.2 GB/s), operates at an efficient 1.1 V voltage, and maintains a CAS latency of CL52, balancing top-tier performance with reliable timing. As enterprise-grade memory, it includes ECC error-correction and an on-module register buffer, ensuring data integrity and signal quality in high-density, multi-DIMM server environments. The module supports both x4 and x8 DRAM organization, up to two ranks per DIMM, and two DIMMs per channel of system architectures. Built in the standard 288-pin DDR5 RDIMM form factor, it comprises 40 × (6 Gb × 4) DRAM chips, is currently in mass production, and adheres to RoHS and halogen-free standards. It is Supermicro/OEM-validated, widely stocked through major distributors, and typically backed by warranties.
M321RYGA0PB2-CCP

Description: This is a 96 GB DDR5‑6400 MT/s Registered DIMM (RDIMM), with dual-rank ×4 organizat ...
Package: TRAY | MOQ: 100 | MPQ: 25

M321R8GA0PB2-CCP / This is a 64 GB DDR5‑6400 MT/s RDIMM (Registered DIMM), structured as dual‑rank ×4 with an 80‑bit data width (72‑bit data + 8‑bit ECC), designed for modern server workloads. It achieves PC5‑51200 bandwidth (~51.2 GB/s), operates at an efficient 1.1 V, and features CAS latency CL52, delivering high throughput and stable timing performance. Built for enterprise deployment, this module incorporates ECC error correction and a on‑module register to bolster data integrity and signal reliability in dense, multi‑DIMM configurations. It supports x4/x8 DRAM organization, up to two ranks per DIMM, and dual‑DIMMs‑per‑channel setups—offering flexibility for diverse server architectures. Following the standard 288‑pin DDR5 RDIMM form factor, the module is assembled using (4G × 4) × 40 DRAM chips, is in mass production, and is RoHS‑compliant/halogen-free. It’s widely Supermicro‑certified and OEM-validated, ensuring compatibility with major server platforms and availability through authorized distributors.
M321R8GA0PB2-CCP

Description: This is a 64 GB DDR5‑6400 MT/s RDIMM (Registered DIMM), structured as dual‑rank  ...
Package: TRAY | MOQ: 100 | MPQ: 20

M321R8GA0EB2-CCP / This is a 64 GB DDR5‑6400 MT/s Registered DIMM (DDR5‑6400 PC5‑51200R), configured as dual‑rank x4 with an 80‑bit data width (72‑bit data + ECC). It operates at 1.1 V and delivers CL52 CAS latency, offering robust bandwidth (~51.2 GB/s) balanced with dependable timing designed for high-performance server environments. Key enterprise-grade features include ECC error-correction and a registered buffer, which together enhance data integrity and signal quality in dense, multi-DIMM configurations. Built with 40 × (4 Gb × 4) DRAM chips, it supports x4 organization across two ranks and up to two DIMMs per channel.
M321R8GA0EB2-CCP

Description: This is a 64 GB DDR5‑6400 MT/s Registered DIMM (DDR5‑6400 PC5‑51200R), configure ...
Package: TRAY | MOQ: 100 | MPQ: 10

M321R4GA3EB2-CCP / This is a 32 GB DDR5‑6400 MT/s RDIMM (Registered DIMM), with dual‑rank ×8 organization and a full 72‑bit + ECC data path. Operating at PC5‑51200 bandwidth (~51.2 GB/s), it uses an efficient 1.1 V supply and features a CAS latency of CL52, delivering high-speed performance optimized for server workloads. Engineered for enterprise environments, it includes ECC error correction and a registered buffer to enhance signal integrity and reliability in multi‑DIMM systems. It supports both x8 and x4 DRAM organization, across two ranks per DIMM and up to 2 DIMMs-per-channel configurations. Built in the standard 288‑pin DDR5 RDIMM form factor, the module comprises 20 × 2 Gb × 8 DRAM chips, is in mass production, and complies with RoHS and halogen-free standards. It is commonly validated by Supermicro and OEMs for broad server compatibility and typically available through major enterprise distributors.
M321R4GA3EB2-CCP

Description: This is a 32 GB DDR5‑6400 MT/s RDIMM (Registered DIMM), with dual‑rank ×8 organiz ...
Package: TRAY | MOQ: 45 | MPQ: 15

M321RYGA0PB0-CWM / This is a 96 GB DDR5‑5600 MT/s RDIMM (Registered DIMM), configured as dual‑rank ×4 with a full 80‑bit data path (72 bits + ECC), specifically designed for server-grade workloads. It offers PC5‑44800 bandwidth (~44.8 GB/s) and runs on a power-efficient 1.1 V supply, with a CAS latency of CL46, ensuring high throughput and dependable timing. The module includes ECC error correction and a registered buffer, enhancing data integrity and signal stability in dense, multi-DIMM system environments. It supports x4/x8 device configurations, up to two ranks per DIMM, and 2 DIMMs-per-channel setups.
M321RYGA0PB0-CWM

Description: This is a 96 GB DDR5‑5600 MT/s RDIMM (Registered DIMM), configured as dual‑rank  ...
Package: TRAY | MOQ: 100 | MPQ: 20

M321R8GA0PB0-CWM / This is a 64 GB DDR5‑5600 MT/s Registered DIMM (RDIMM), configured as dual‑rank ×4 with a full 72 + 8 ECC‑bit data path, engineered for server-grade performance. It delivers PC5‑44800 bandwidth (~44.8 GB/s), runs on an efficient 1.1 V supply, and maintains CAS latency CL46, offering a strong balance of speed and stability. Enterprise-ready, it features ECC error correction to detect and fix single-bit errors, along with a registered buffer to ensure signal integrity in dense, multi-DIMM configurations. It supports both x4 and x8 DRAM configurations and is validated for up to 2 ranks per DIMM and dual-DIMM-per-channel setups.
M321R8GA0PB0-CWM

Description: This is a 64 GB DDR5‑5600 MT/s Registered DIMM (RDIMM), configured as dual‑rank  ...
Package: TRAY | MOQ: 100 | MPQ: 25

M321R8GA0EB2-CWM / This is a 64 GB DDR5‑5600 MT/s RDIMM, configured as dual‑rank ×4 with a full 72 + 8 ECC‑bit data path, designed for server-grade workloads. It delivers PC5‑44800 bandwidth (~44.8 GB/s) and operates on a low 1.1 V power supply, with a CAS latency of CL46, ensuring both high throughput and timing stability. Engineered for enterprise environments, it includes ECC error‑correction and a registered buffer (on-module register) to enhance signal integrity and reliability under dense, multi-DIMM configurations, supporting x4 or x8 chip organization across up to 2 ranks and 2 DIMMs-per-channel setups.
M321R8GA0EB2-CWM

Description: This is a 64 GB DDR5‑5600 MT/s RDIMM, configured as dual‑rank ×4 with a full 72 ...
Package: TRAY | MOQ: 100 | MPQ: 20

M321R4GA3PB0-CWM / This is a 32 GB DDR5‑5600 MT/s RDIMM (Registered DIMM), configured as dual-rank (2R × 8) with a full 72‑bit data path plus ECC, engineered for server-grade workloads. It delivers PC5‑44800 bandwidth (~44.8 GB/s), operates on an energy-efficient 1.1 V supply, and features CAS latency CL46, offering strong performance with stable timing. The module includes ECC error‑correction and a registered buffer, improving data integrity and signal quality across multi-DIMM setups in dense server environments.
M321R4GA3PB0-CWM

Description: This is a 32 GB DDR5‑5600 MT/s RDIMM (Registered DIMM), configured as dual-rank (2R ...
Package: TRAY | MOQ: 100 | MPQ: 20

MTC40F204WS1RC64BC1T / This is a 96 GB DDR5‑6400 MT/s RDIMM (Registered DIMM), organized as dual-rank ×4 with an 80-bit data path (72 bits + ECC), designed for high-density, performance-critical server and virtualization environments. It delivers PC5‑51200 bandwidth (~51.2 GB/s), runs on an energy-efficient 1.1 V supply, and uses CAS latency CL52, offering ultra-fast data throughput with stable timing. As enterprise-grade memory, it supports ECC error-correction and includes a registered buffer, ensuring data integrity and signal reliability across multi-DIMM configurations.
MTC40F204WS1RC64BC1T

Description: This is a 96 GB DDR5‑6400 MT/s RDIMM (Registered DIMM), organized as dual-rank ×4 w ...
Package: TRAY | MOQ: 100 | MPQ: 20

MTC40F2046S1RC64BD2T / This is a 64 GB DDR5‑6400 MT/s RDIMM (Registered DIMM), dual‑rank ×4 with an 80‑bit data width (72 bits + ECC), tailored for high-throughput, server-grade workloads. It supports PC5‑51200 bandwidth (~51.2 GB/s), runs on an energy-efficient 1.1 V supply, and features CAS latency CL52, delivering top-tier performance and stability. Designed for enterprise environments, it includes ECC error‑correction and a registered buffer to ensure data integrity and signal reliability in multi-DIMM configurations.
MTC40F2046S1RC64BD2T

Description: This is a 64 GB DDR5‑6400 MT/s RDIMM (Registered DIMM), dual‑rank ×4 with an 80 ...
Package: TRAY | MOQ: 60 | MPQ: 20

MTC20F1045S1RC64BD2T / This module is a 96 GB DDR5‑5600 MT/s RDIMM, with a dual‑rank ×4 organization and an 80‑bit data path (72 + ECC), tailored for memory‑intensive server and virtualization workloads. It supports PC5‑44800 bandwidth (~44.8 GB/s), operates at a low 1.1 V, and utilizes a CAS latency of CL46 (46‑45‑45), delivering high data throughput with stable timing. As enterprise‑grade memory, it includes ECC to detect and correct single‑bit errors and a registered buffer for signal integrity in multi‑DIMM server setups. It comes in a standard 288‑pin DDR5 RDIMM form factor, is rated for commercial temperatures (0 °C–95 °C), and carries RoHS compliance. It’s widely validated across enterprise platforms and often used as an OEM or factory‑spec module for major server manufacturers .
MTC20F1045S1RC64BD2T

Description: This module is a 96 GB DDR5‑5600 MT/s RDIMM, with a dual‑rank ×4 organization and ...
Package: TRAY | MOQ: 60 | MPQ: 20

MTC40F204WS1RC56BB2T / This is a 96 GB DDR5‑5600 MT/s RDIMM (Registered DIMM), arranged as dual‑rank ×4 with an 80‑bit data path (72 bits + ECC), making it ideal for memory-intensive server and virtualization workloads. It delivers PC5‑44800 bandwidth (~44.8 GB/s), operates at an energy-efficient 1.1 V supply, and features CAS latency CL46 (46‑45‑45), balancing ultra-fast throughput with stable timing. As a high-end enterprise module, it supports ECC error correction and includes a registered buffer for strong data integrity and signal stability in dense, multi-DIMM server configurations. The module uses the standard 288‑pin DDR5 RDIMM form factor, offers a maximum operating temperature of +95 °C, and carries RoHS compliance, ensuring durability and environmental standards. It’s broadly validated across enterprise-grade platforms, often found as either Micron-labeled or OEM-branded replacement for systems like Dell, HP, and others.
MTC40F204WS1RC56BB2T

Description: This is a 96 GB DDR5‑5600 MT/s RDIMM (Registered DIMM), arranged as dual‑rank ×4 ...
Package: TRAY | MOQ: 100 | MPQ: 20

MTC40F2046S1RC56BD2T / This is a 64 GB DDR5‑5600 MT/s RDIMM (Registered DIMM), dual‑rank (2Rx4) with a full 80‑bit data path (72 bits + ECC), making it ideal for high-performance servers and workstations. It supports PC5‑44800 bandwidth (~44.8 GB/s), operates at energy-efficient 1.1 V, and maintains CAS latency CL46, delivering strong throughput and stability under heavy workloads. As an enterprise-grade module, it features ECC error‑correction to detect and fix single-bit errors and includes a registered buffer, enhancing signal integrity in high-density, multi-DIMM configurations. It follows the standard 288‑pin RDIMM form factor and is widely validated across server platforms from Intel and AMD, including Supermicro certification.
MTC40F2046S1RC56BD2T

Description: This is a 64 GB DDR5‑5600 MT/s RDIMM (Registered DIMM), dual‑rank (2Rx4) with a fu ...
Package: TRAY | MOQ: 100 | MPQ: 20

MTC20F2085S1RC56BD2T / This is a 32 GB DDR5‑5600 MT/s RDIMM (registered DIMM), dual‑rank (2Rx8) ECC memory optimized for servers and workstations. It offers PC5‑44800 bandwidth (~44.8 GB/s), operates at an energy-efficient 1.1 V, and uses CAS latency CL46—ideal for high-speed data throughput. The module includes ECC (error-correcting code) to detect and correct single-bit errors, and a registered buffer to maintain signal integrity in high-density, multi-DIMM configurations. It meets the standard 288-pin RDIMM form factor, making it compatible with most enterprise-class motherboards.
MTC20F2085S1RC56BD2T

Description: This is a 32 GB DDR5‑5600 MT/s RDIMM (registered DIMM), dual‑rank (2Rx8) ECC memor ...
Package: TRAY | MOQ: 100 | MPQ: 20

HMAA8GR7CJR4N / This is a 64 GB DDR4‑3200 MT/s RDIMM (Registered DIMM), configured in dual-rank (2Rx4) with a full 72-bit data path, designed for demanding server environments. It operates at PC4‑25600 bandwidth (~25.6 GB/s) on a low 1.2 V supply, with a CAS latency of CL22, offering a solid mix of speed and efficiency. As an enterprise-grade module, it supports ECC error-correction and features a registered buffer, ensuring data integrity and signal stability in high-density, multi-DIMM systems. Physically, the module conforms to the 288-pin RDIMM form factor, with DRAM chips organized as 2 Gb × 4 per rank, and is tested and certified compatible with OEM platforms such as Dell PowerEdge, HP ProLiant, Intel, AMD, Supermicro, and more. Many vendors, including Supermicro, also specifically certify it for enhanced reliability in enterprise workloads.
HMAA8GR7CJR4N

Description: This is a 64 GB DDR4‑3200 MT/s RDIMM (Registered DIMM), configured in dual-rank (2Rx ...
Package: TRAY | MOQ: 50 | MPQ: 10

HMAG84EXNRA / This is a 32 GB DDR4‑3200 MT/s RDIMM (Registered DIMM), dual-rank (2R × 4) using a x4 chip configuration and a full 72-bit data path, purpose-built for server and workstation environments. It delivers PC4‑25600 bandwidth (~25.6 GB/s), operates at the low 1.2 V standard for DDR4 memory, and features CAS latency CL22, offering a strong balance of speed and efficiency. The module supports ECC (error-correcting code) and is a registered/buffered DIMM, enhancing reliability and signal integrity in multi-DIMM, high-capacity server setups—it is JEDEC-compliant and RoHS certified. Physically, it conforms to the standard 288-pin RDIMM form factor and is rated for typical commercial operating conditions. Supermicro certification corroborates its compatibility with enterprise-grade systems, and it ships with multi-year warranties when purchased through authorized channels.
HMAG84EXNRA

Description: This is a 32 GB DDR4‑3200 MT/s RDIMM (Registered DIMM), dual-rank (2R × 4) usin ...
Package: TRAY | MOQ: 50 | MPQ: 10

M393A8G40BB4-CWE / This is a 64 GB DDR4‑3200 MT/s RDIMM (Registered DIMM), configured as dual-rank x4 with a full 72‑bit data path, optimized for high-performance server use. It delivers PC4‑25600 bandwidth (~25.6 GB/s) while operating on an energy-efficient 1.2 V supply. The module maintains CAS latency CL22–24, striking a balance between speed and stability. As an enterprise-grade component, it includes ECC error-correction to catch and correct single-bit errors and uses a registered buffer to ensure signal integrity in dense, multi-DIMM server configurations—fully JEDEC-compliant and compatible with major OEM platforms .
M393A8G40BB4-CWE

Description: This is a 64 GB DDR4‑3200 MT/s RDIMM (Registered DIMM), configured as dual-rank x4 w ...
Package: TRAY | MOQ: 50 | MPQ: 10

M393A4K40DB3-CWE / This is a 32 GB DDR4‑3200 MT/s RDIMM (Registered DIMM), featuring a dual-rank, x4 configuration and a 72-bit data path, delivering robust performance tailored for server environments. Operating at PC4‑25600 bandwidth (~25.6 GB/s) and using an energy-efficient 1.2 V supply, it maintains a CAS latency of CL22, balancing speed and responsiveness. The module includes ECC error‑correction and a registered buffer, enhancing data integrity and ensuring signal reliability in multi-DIMM, high-density server systems—fully JEDEC‑compliant and interchangeable across major OEM platforms.
M393A4K40DB3-CWE

Description: This is a 32 GB DDR4‑3200 MT/s RDIMM (Registered DIMM), featuring a dual-rank, x4 co ...
Package: TRAY | MOQ: 30 | MPQ: 10

MTA36ASF8G72PZ-3G2F1 / This is a 64 GB DDR4‑3200 MT/s RDIMM (Registered DIMM), dual‑rank with a 72‑bit data path, delivering high-density performance for server environments. It operates at PC4‑25600 bandwidth (~25.6 GB/s) and utilizes an efficient 1.2 V supply. Featuring CAS latency CL22 (22‑22‑22), it offers balanced speed and quick access times. As an enterprise-grade module, it supports ECC error-correction to catch and fix single-bit memory errors, ensuring data integrity, and includes a registered/buffered architecture to maintain signal stability in high-capacity, multi-DIMM server systems. Physically, the module follows the standard 288‑pin RDIMM form factor and supports industrial operating temperatures from 0 °C to 95 °C, making it robust for demanding environments. Additional technical features include on-board SPD support and temperature monitoring, low-profile design options for rack optimization, and compliance with ECC and RoHS standards.
MTA36ASF8G72PZ-3G2F1

Description: This is a 64 GB DDR4‑3200 MT/s RDIMM (Registered DIMM), dual‑rank with a 72‑bit ...
Package: TRAY | MOQ: 20 | MPQ: 1

MTA36ASF4G72PZ-3G2R1 / This is a 32 GB DDR4-3200 MT/s RDIMM (Registered DIMM), with a 288-pin form factor and dual-rank, 4 G×72-bit configuration. Operating at PC4‑25600 data bandwidth (~25.6 GB/s), it uses a low 1.2 V supply for energy efficiency. With DDR4-3200 timing parameters CL22‑22‑22, it supports fast data rates and improved latency compared to slower DDR4 modules. Key enterprise-grade features include ECC error correction, essential for detecting and correcting single-bit memory errors, ensuring reliability in critical server and workstation environments. The registered (buffered) design includes a register/clock-driver to enhance signal integrity and stability, which is important in multi-DIMM and high-capacity server configurations. Technical specs outline its industrial robustness: it supports an operating temperature up to +95 °C and includes on-board SPD EEPROM and temperature sensor for monitoring. The memory chips are 8 Gb DDR4 components, organized into 16 banks, with full-register and PLL functionality in the RCD to manage clocking and commands
MTA36ASF4G72PZ-3G2R1

Description: This is a 32 GB DDR4-3200 MT/s RDIMM (Registered DIMM), with a 288-pin form factor and ...
Package: TRAY | MOQ: 50 | MPQ: 1

EMI2121MTTAG / Component type: 2‑line common‑mode filter + integrated ESD protection in a compact WDFN8 package (2.2 × 2 mm, 0.75 mm height), Current rating (per line): 100 mA maximum continuous current. DC resistance (per line): Typical 8 Ω, Bandwidth (3 dB cutoff): ≥2 GHz, Common-mode attenuation: Min. 25 dB at 700 MHz, ≥30 dB at 800 MHz, Input capacitance: ~0.8 pF typical (1.3 pF max) — ensures low load on high-speed signals, Reverse‑working voltage: 5 V, Breakdown: 5.5 V min at 1 mA, up to ~9 V max
EMI2121MTTAG

Description: Component type: 2‑line common‑mode filter + integrated ESD protection in a compact WDF ...
Package: T&R | MOQ: 3000 | MPQ: 3000

LTC1968CMS8#TRPBF / A precision true RMS‑to‑DC converter using a delta‑sigma architecture that offers high linearity (typical 0.02 %) and amplitude‑independent bandwidth Delivers ≤ 1 % additional gain error up to 500 kHz and maintains better than 0.1 % up to 150 kHz Operates from 4.5 V to 5.5 V, with typical active current of 2.3 mA and ultralow shutdown current (~0.1 µA) Supports rail‑to‑rail common‑mode input, up to ±1 V peak differential input; output is rail‑to‑rail with a separate reference pin for level‑shifting Linearity error 0.02 %, gain error ~0.1 %, supports crest factors up to 4 with minimal dynamic error Input impedance ≈ 1.2 MΩ; output impedance ≈ 12.5 kΩ (as averaged by on‑chip switched capacitor). Available in 8‑pin MSOP/TSSOP surface‑mount package; comes in both tape‑and‑reel (#TRPBF) and tray (#PBF) options.
LTC1968CMS8#TRPBF

Description: A precision true RMS‑to‑DC converter using a delta‑sigma architecture that offers hi ...
Package: T&R | MOQ: 2500 | MPQ: 2500

IS31AP2005-SLS2-TR / The IS31AP2005-SLS2-TR is a high-efficiency, mono Class-D audio power amplifier from Lumissil Microsystems, designed for portable and battery-powered applications. It delivers up to 2.95 W into a 4 Ω load at 5 V supply with 10% total harmonic distortion plus noise (THD+N), and 1.70 W into an 8 Ω load under the same conditions . Operating over a supply voltage range of 2.7 V to 5.5 V, the amplifier maintains high efficiency, reaching up to 89% at 400 mW with an 8 Ω speaker . Its filter-less PWM architecture eliminates the need for output filters, reducing external component count and simplifying design. The device features differential inputs, integrated pop-and-click suppression circuitry, and short-circuit and thermal protection. Housed in a compact 8-MSOP package, it is suitable for applications such as mobile devices, portable audio equipment, and educational toys.
IS31AP2005-SLS2-TR

Description: The IS31AP2005-SLS2-TR is a high-efficiency, mono Class-D audio power amplifier from Lumis ...
Package: T&R | MOQ: 2500 | MPQ: 2500

IS31AP2005-DLS2-TR / The IS31AP2005-DLS2-TR is a mono, Class D audio power amplifier from Lumissil Microsystems, designed for portable and battery-powered applications. Housed in a compact 8-DFN (3x3 mm) package, it delivers up to 2.95 W into a 4 Ω load with a supply voltage ranging from 2.7 V to 5.5 V. The amplifier features differential inputs, a shutdown function, and integrated pop-and-click suppression circuitry. It operates over a temperature range of -40°C to +85°C, making it suitable for various consumer electronics, including mobile devices and portable audio equipment. The device is RoHS compliant and 100% lead-free.
IS31AP2005-DLS2-TR

Description: The IS31AP2005-DLS2-TR is a mono, Class D audio power amplifier from Lumissil Microsystems ...
Package: T&R | MOQ: 2500 | MPQ: 2500

A21SP16J / The A21SP16J is a compact, high-efficiency Class-D mono audio power amplifier developed by STMicroelectronics. Designed for portable and battery-powered applications, it delivers up to 3 W into a 4 Ω load and 1.75 W into an 8 Ω load at a 5 V supply with 10% total harmonic distortion plus noise (THD+N). For applications requiring lower distortion, it provides 2.3 W into 4 Ω and 1.4 W into 8 Ω at 1% THD+N. Operating over a supply voltage range of 2.4 V to 5.5 V, the amplifier maintains a typical efficiency of 88%, making it ideal for energy-sensitive devices. It features an adjustable gain via external resistors, a low standby current of 10 nA, and a typical operating current of 2 mA at 3 V. The amplifier boasts a signal-to-noise ratio (SNR) of 85 dB and a power supply rejection ratio (PSRR) of 63 dB at 217 Hz with 6 dB gain. With a PWM base frequency of 250 kHz, it ensures efficient audio amplification. Additional features include thermal shutdown protection and low pop & click noise during power transitions. The device is housed in a 9-bump flip-chip package measuring 1.6 mm x 1.6 mm, suitable for compact designs in wearables, mobile devices, and healthcare applications.
A21SP16J

Description: The A21SP16J is a compact, high-efficiency Class-D mono audio power amplifier developed by ...
Package: T&R | MOQ: 5000 | MPQ: 5000

AO4480 / The AO4480 is a dual N-channel MOSFET designed for high-efficiency power switching in compact packages. It operates with a maximum drain-source voltage (VDS) of 30V, making it suitable for low- to medium-voltage applications like DC-DC converters and load switches. Each channel can handle a continuous drain current (ID) up to 8A at a VGS of 10V, and up to 6.5A at 4.5V, providing robust current-handling for compact designs. It features a very low on-resistance (RDS(on)), typically 0.0105ohm at VGS = 10V and 0.0135ohm at VGS = 4.5V, ensuring minimal conduction losses and high efficiency. The gate threshold voltage (VGS(th)) ranges from 0.6V to 1.0V, making it fully logic-level compatible. Fast switching characteristics, low gate charge, and a compact SO-8 package make the AO4480 ideal for power management, synchronous buck converters, and battery-operated equipment.
AO4480

Description: The AO4480 is a dual N-channel MOSFET designed for high-efficiency power switching in comp ...
Package: T&R | MOQ: 3000 | MPQ: 3000

2N7000 / The 2N7000 is an N-channel enhancement-mode MOSFET designed primarily for low-power switching applications. It features a maximum drain-source voltage (VDS) of 60V, allowing it to handle moderate voltage levels. The continuous drain current (ID) is rated at 200 mA, with pulsed currents permissible up to 500 mA, making it suitable for small-load switching. It has a relatively low on-resistance (RDS(on)), typically 1.2 ohms at a gate voltage (VGS) of 10V, contributing to efficient operation with minimal power loss. The gate threshold voltage (VGS(th)) ranges from 0.8V to 3V, meaning it can be turned on with standard logic-level signals. Additionally, the input capacitance is low, around 20–50 pF, enabling fast switching speeds with minimal gate drive requirements. These features make the 2N7000 an ideal choice for digital switching, signal interfacing, and small load driving in both hobbyist and commercial circuits.
2N7000

Description: The 2N7000 is an N-channel enhancement-mode MOSFET designed primarily for low-power switch ...
Package: T&R | MOQ: 10000 | MPQ: 10000

BSS138 / The BSS138 is a widely used N-channel logic-level enhancement-mode MOSFET, ideal for low-voltage, low-current switching applications. Its compact SOT-23 surface-mount package and compatibility with 3.3V and 5V logic levels make it a staple in digital circuits, particularly for level shifting, signal interfacing, and load switching in microcontroller-based systems.
BSS138

Description: The BSS138 is a widely used N-channel logic-level enhancement-mode MOSFET, ideal for low-v ...
Package: T&R | MOQ: 3000 | MPQ: 3000

MMBT5179 / The MMBT5179 is a high-frequency NPN bipolar junction transistor (BJT) designed for low-noise amplification in UHF/VHF frequency ranges. Manufactured by ON Semiconductor, it is optimized for applications such as RF amplifiers, oscillators, and high-frequency signal processing in consumer electronics and communication devices. This transistor operates within a collector current range of 100 μA to 30 mA, making it suitable for both common-emitter and common-base configurations. It features a transition frequency (fT) of up to 2 GHz, ensuring high-speed performance in RF applications. The MMBT5179 offers a low noise figure of 5.0 dB at 200 MHz, which is critical for maintaining signal integrity in sensitive amplification stages. Key electrical characteristics include a collector-emitter voltage (VCEO) of 12 V, collector-base voltage (VCBO) of 20 V, and emitter-base voltage (VEBO) of 2.5 V. It supports a maximum collector current (IC) of 50 mA and a total power dissipation (PD) of 225 mW. The device is housed in a compact SOT-23 surface-mount package, facilitating integration into space-constrained designs. Its operating and storage junction temperature range spans from -55°C to +150°C, ensuring reliability across various environmental conditions.
MMBT5179

Description: The MMBT5179 is a high-frequency NPN bipolar junction transistor (BJT) designed for low-no ...
Package: T&R | MOQ: 3000 | MPQ: 3000

HC32L130J8TA-LQFP48 / The HC32L130J8TA-LQ48 is a 32-bit ultra-low-power microcontroller from HDSC, based on the ARM Cortex-M0+ core, operating at up to 48 MHz. It offers a balance of performance and power efficiency, making it suitable for various embedded applications.
HC32L130J8TA-LQFP48

Description: The HC32L130J8TA-LQ48 is a 32-bit ultra-low-power microcontroller from HDSC, based on the ...
Package: TRAY | MOQ: 1250 | MPQ: 250

HC32L130F8UA-QFN32TR / The HC32L130F8UA-QFN32TR is a 32-bit ultra-low-power microcontroller from HDSC, designed for applications requiring efficient performance in a compact form factor. It features an ARM Cortex-M0+ core operating at up to 48 MHz and supports a wide operating voltage range from 1.8V to 5.5V, making it suitable for various power-sensitive applications.
HC32L130F8UA-QFN32TR

Description: The HC32L130F8UA-QFN32TR is a 32-bit ultra-low-power microcontroller from HDSC, designed f ...
Package: T&R | MOQ: 5000 | MPQ: 5000

HC32L110C6UA-SFN20TR / The HC32L110C6UA-SFN20TR is an ultra-low-power 32-bit microcontroller from HDSC, designed for compact and energy-efficient applications. It features an ARM Cortex-M0+ core operating at up to 32 MHz, offering a balance between performance and power consumption.
HC32L110C6UA-SFN20TR

Description: The HC32L110C6UA-SFN20TR is an ultra-low-power 32-bit microcontroller from HDSC, designed ...
Package: T&R | MOQ: 5000 | MPQ: 5000

HC32L110C6PA-TSSOP20TR / The HC32L110C6PA-TSSOP20TR is a 32-bit ultra-low-power microcontroller from HDSC, designed for applications requiring efficient performance and compact size. Built around the ARM Cortex-M0+ core, it operates at frequencies up to 32 MHz and supports a wide operating voltage range from 1.8V to 5.5V, making it suitable for various power-sensitive applications .
HC32L110C6PA-TSSOP20TR

Description: The HC32L110C6PA-TSSOP20TR is a 32-bit ultra-low-power microcontroller from HDSC, designed ...
Package: T&R | MOQ: 3000 | MPQ: 3000

HC32L072KATA-LQFP64  / The HC32L072KATA-LQFP64 is a 32-bit ultra-low-power microcontroller from HDSC, built around an ARM Cortex-M0+ core operating at up to 48 MHz. It offers 128 KB of Flash memory and 16 KB of SRAM, providing ample space for code and data storage.
HC32L072KATA-LQFP64 

Description: The HC32L072KATA-LQFP64 is a 32-bit ultra-low-power microcontroller from HDSC, built aroun ...
Package: TRAY | MOQ: 1120 | MPQ: 160













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