All Products SDRAM

NT5CC64M16DP-DI / The NT5CC64M16DP-DI is a high-performance <strong>1Gbit DDR3 SDRAM</strong> developed by <strong>Nanya Technology</strong>, designed for embedded systems, communication equipment, and high-speed digital applications. It features a memory organization of <strong>64M × 16 bits</strong>, enabling efficient data handling and reliable bandwidth performance. <br><br>This device utilizes a <strong>DDR3 architecture</strong>, allowing data transfers on both rising and falling edges of the clock signal, significantly increasing throughput compared to conventional SDRAM technologies. <br><br>The NT5CC64M16DP-DI supports high-speed operation typically up to <strong>1600 Mbps</strong>, making it suitable for applications requiring fast and stable memory access. <br><br>Operating at a nominal supply voltage of <strong>1.5V</strong>, the device offers a balance between power efficiency and performance, and is compatible with <strong>SSTL_15 signaling</strong> for reliable communication with modern memory controllers. <br><br>Advanced features such as <strong>on-die termination (ODT), auto-refresh, and self-refresh</strong> help maintain signal integrity and ensure stable operation in dynamic environments. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC64M16DP-DI is optimized for high-density PCB layouts and space-constrained designs. <br><br>The <strong>NT5CC64M16DP-DI</strong> is widely used in applications such as <strong>embedded systems, networking devices, industrial controllers, and consumer electronics</strong>, where reliable and cost-effective high-speed volatile memory is required.
NT5CC64M16DP-DI

Description: The NT5CC64M16DP-DI is a high-performance 1Gbit DDR3 SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC512M16JR-DI / The NT5CC512M16JR-DI is a high-performance <strong>8Gbit DDR3L SDRAM</strong> developed by <strong>Nanya Technology</strong>, engineered for low-power, high-speed memory applications in embedded and industrial systems. It features a memory organization of <strong>512M × 16 bits</strong>, delivering high bandwidth and efficient data throughput. <br><br>This device utilizes a <strong>DDR3L architecture</strong>, enabling data transfers on both rising and falling edges of the clock signal, significantly increasing performance compared to traditional SDRAM technologies. <br><br>The NT5CC512M16JR-DI operates at a nominal voltage of <strong>1.35V</strong>, reducing power consumption and thermal output while maintaining compatibility with <strong>1.5V operation</strong> in flexible system designs. <br><br>It supports high-speed operation up to approximately <strong>1600 Mbps</strong>, making it suitable for applications requiring fast and reliable memory access and low latency. <br><br>Advanced features such as <strong>on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture</strong> ensure improved signal integrity and stable operation in high-speed environments. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC512M16JR-DI is optimized for high-density PCB layouts and space-constrained designs. <br><br>The <strong>NT5CC512M16JR-DI</strong> is widely used in applications such as <strong>embedded systems, networking devices, industrial controllers, portable electronics, and consumer products</strong>, where low power consumption and high-capacity volatile memory are critical.
NT5CC512M16JR-DI

Description: The NT5CC512M16JR-DI is a high-performance 8Gbit DDR3L SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC512M16ER-DI / The NT5CC512M16ER-DI is a high-density <strong>8Gbit DDR3L SDRAM</strong> developed by <strong>Nanya Technology</strong>, designed for low-power, high-performance memory applications in embedded systems and advanced digital platforms. It features a memory organization of <strong>512M × 16 bits</strong>, enabling efficient data throughput and high bandwidth performance. <br><br>This device utilizes a <strong>DDR3L architecture</strong>, allowing data transfers on both rising and falling edges of the clock signal, significantly increasing performance compared to conventional SDRAM technologies. <br><br>The NT5CC512M16ER-DI operates at a reduced supply voltage of approximately <strong>1.35V</strong>, minimizing power consumption and heat generation while also supporting <strong>1.5V compatibility</strong> for flexible system integration. <br><br>It supports high-speed operation up to approximately <strong>1600 Mbps</strong>, making it suitable for performance-critical applications requiring fast and reliable memory access. <br><br>Advanced features such as <strong>on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture</strong> enhance signal integrity and ensure stable operation in high-speed environments. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC512M16ER-DI is optimized for high-density PCB layouts and modern electronic designs. <br><br>The <strong>NT5CC512M16ER-DI</strong> is widely used in applications such as <strong>embedded computing, networking equipment, industrial automation, portable devices, and consumer electronics</strong>, where low power consumption and high-capacity volatile memory are essential.
NT5CC512M16ER-DI

Description: The NT5CC512M16ER-DI is a high-density 8Gbit DDR3L SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC512M16DP-DI / The NT5CC512M16DP-DI is a high-density <strong>8Gbit DDR3 SDRAM</strong> developed by <strong>Nanya Technology</strong>, engineered for high-performance computing, embedded systems, and data-intensive applications. It features a memory organization of <strong>512M × 16 bits</strong>, delivering high bandwidth and efficient data throughput for demanding applications. <br><br>This device utilizes a <strong>DDR3 architecture</strong>, enabling data transfers on both rising and falling edges of the clock signal, significantly increasing performance compared to conventional SDRAM technologies. <br><br>The NT5CC512M16DP-DI supports high-speed operation typically up to <strong>1600 Mbps</strong>, making it suitable for applications requiring fast and reliable memory access with low latency. <br><br>Operating at a nominal supply voltage of <strong>1.5V</strong>, the device provides a balance between power efficiency and performance, and is compatible with <strong>SSTL_15 signaling</strong> for stable communication with modern memory controllers. <br><br>Advanced features such as <strong>on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture</strong> enhance signal integrity and ensure reliable operation in high-speed systems. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC512M16DP-DI is ideal for high-density PCB layouts and space-constrained designs. <br><br>The <strong>NT5CC512M16DP-DI</strong> is widely used in applications such as <strong>embedded computing, networking equipment, industrial automation, consumer electronics, and high-performance digital systems</strong>, where high-capacity and reliable volatile memory is essential.
NT5CC512M16DP-DI

Description: The NT5CC512M16DP-DI is a high-density 8Gbit DDR3 SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC256M16JR-DI / The NT5CC256M16JR-DI is a high-performance <strong>4Gbit DDR3L SDRAM</strong> developed by <strong>Nanya Technology</strong>, designed for low-power, high-speed memory applications in embedded and industrial systems. It features a memory organization of <strong>256M × 16 bits</strong>, enabling efficient data throughput and high bandwidth performance. <br><br>This device utilizes a <strong>DDR3L architecture</strong>, supporting data transfers on both rising and falling edges of the clock signal, significantly increasing performance compared to conventional SDRAM solutions. <br><br>The NT5CC256M16JR-DI operates at a nominal voltage of <strong>1.35V</strong>, reducing power consumption and thermal output while maintaining compatibility with <strong>1.5V operation</strong> in flexible system designs. <br><br>It supports high-speed operation up to approximately <strong>1600 Mbps</strong>, making it suitable for applications requiring fast and reliable memory access and low latency. <br><br>Advanced features include <strong>on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture</strong>, ensuring improved signal integrity and stable operation in high-speed environments. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC256M16JR-DI is optimized for high-density PCB layouts and space-constrained designs. <br><br>The <strong>NT5CC256M16JR-DI</strong> is widely used in applications such as <strong>embedded systems, networking equipment, industrial controllers, portable electronics, and consumer devices</strong>, where low power consumption and high-capacity volatile memory are critical.
NT5CC256M16JR-DI

Description: The NT5CC256M16JR-DI is a high-performance 4Gbit DDR3L SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC256M16ER-DI / The NT5CC256M16ER-DI is a high-density <strong>4Gbit DDR3L SDRAM</strong> developed by <strong>Nanya Technology</strong>, engineered for low-power, high-speed memory applications in embedded systems and advanced digital platforms. It features a memory organization of <strong>256M × 16 bits</strong>, enabling efficient data processing and high bandwidth performance. <br><br>This device utilizes a <strong>DDR3L architecture</strong>, allowing data transfers on both rising and falling edges of the clock signal, significantly increasing throughput compared to conventional SDRAM technologies. <br><br>The NT5CC256M16ER-DI operates at a reduced supply voltage of approximately <strong>1.35V</strong>, minimizing power consumption and heat generation while also supporting <strong>1.5V compatibility</strong> for flexible system integration. <br><br>It supports high-speed operation up to approximately <strong>1600 Mbps</strong>, making it suitable for performance-critical applications requiring fast and reliable memory access. <br><br>Advanced features include <strong>on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture</strong>, ensuring improved signal integrity and stable operation in high-speed environments. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC256M16ER-DI is optimized for high-density PCB layouts and modern electronic designs. <br><br>The <strong>NT5CC256M16ER-DI</strong> is widely used in applications such as <strong>embedded computing, networking equipment, industrial automation, portable devices, and consumer electronics</strong>, where low power consumption and high-capacity volatile memory are essential.
NT5CC256M16ER-DI

Description: The NT5CC256M16ER-DI is a high-density 4Gbit DDR3L SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC256M16DP-DI / The NT5CC256M16DP-DI is a high-density <strong>4Gbit DDR3 SDRAM</strong> developed by <strong>Nanya Technology</strong>, designed for high-performance computing, embedded systems, and data-intensive applications. It features a memory organization of <strong>256M × 16 bits</strong>, delivering high bandwidth and efficient data throughput. <br><br>This device utilizes <strong>DDR3 architecture</strong>, enabling data transfers on both rising and falling edges of the clock signal to significantly increase performance compared to traditional SDRAM technologies. <br><br>The NT5CC256M16DP-DI supports high-speed operation typically up to <strong>1600 Mbps</strong>, making it suitable for applications requiring fast and reliable memory access and low latency performance. <br><br>Operating at a nominal supply voltage of <strong>1.5V</strong>, the device provides a balance between performance and power efficiency, and is compatible with <strong>SSTL_15 signaling</strong> for stable communication with modern memory controllers. <br><br>Advanced features such as <strong>on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture</strong> enhance signal integrity and ensure reliable operation in high-speed systems. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC256M16DP-DI is ideal for high-density PCB layouts and space-constrained electronic designs. <br><br>The <strong>NT5CC256M16DP-DI</strong> is widely used in applications such as <strong>embedded computing, networking equipment, industrial automation, consumer electronics, and high-performance digital systems</strong>, where high-capacity and reliable volatile memory is required.
NT5CC256M16DP-DI

Description: The NT5CC256M16DP-DI is a high-density 4Gbit DDR3 SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC128M16JR-DI / The NT5CC128M16JR-DI is a high-performance <strong>2Gbit DDR3L SDRAM</strong> developed by <strong>Nanya Technology</strong>, designed for low-power, high-speed memory applications in embedded and industrial systems. It features a memory organization of <strong>128M × 16 bits</strong>, enabling efficient data processing and high bandwidth performance. <br><br>This device utilizes a <strong>DDR3L architecture</strong>, supporting data transfers on both rising and falling edges of the clock signal, significantly increasing throughput compared to conventional SDRAM technologies. <br><br>The NT5CC128M16JR-DI operates at a nominal voltage of <strong>1.35V</strong>, reducing power consumption and thermal output, while also maintaining compatibility with <strong>1.5V operation</strong> in flexible system designs. <br><br>It supports high-speed operation typically up to <strong>1600 Mbps</strong>, making it suitable for applications requiring fast and reliable memory access. <br><br>Advanced features include <strong>on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture</strong>, ensuring improved signal integrity and stable operation in high-speed environments. <br><br>The device is housed in a compact <strong>96-ball FBGA surface-mount package</strong>, optimized for high-density PCB layouts and space-constrained designs. <br><br>The <strong>NT5CC128M16JR-DI</strong> is widely used in applications such as <strong>embedded systems, networking devices, industrial controllers, portable electronics, and consumer products</strong>, where low power consumption and high-speed volatile memory are essential.
NT5CC128M16JR-DI

Description: The NT5CC128M16JR-DI is a high-performance 2Gbit DDR3L SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC128M16ER-DI / The NT5CC128M16ER-DI is a high-efficiency <strong>2Gbit DDR3L SDRAM</strong> developed by <strong>Nanya Technology</strong>, designed for low-power, high-speed memory applications in embedded systems and advanced digital platforms. It features a memory organization of <strong>128M × 16 bits</strong>, delivering reliable data throughput and high bandwidth performance. <br><br>This device utilizes a <strong>double data rate (DDR3L) architecture</strong>, allowing data transfers on both rising and falling edges of the clock signal, significantly increasing performance compared to conventional SDRAM solutions. <br><br>The NT5CC128M16ER-DI operates at a reduced supply voltage of approximately <strong>1.35V</strong>, offering improved power efficiency and reduced heat generation, making it ideal for energy-sensitive applications. It is also backward compatible with <strong>1.5V operation</strong> in many system designs. <br><br>Supporting high-speed operation up to approximately <strong>1600 Mbps</strong>, the device is suitable for performance-demanding applications requiring fast and stable memory access. <br><br>It incorporates advanced features such as <strong>on-die termination (ODT), auto-refresh, self-refresh, and fly-by topology</strong>, enhancing signal integrity and ensuring reliable system performance. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC128M16ER-DI is optimized for high-density PCB layouts and modern electronic designs. <br><br>The <strong>NT5CC128M16ER-DI</strong> is widely used in applications such as <strong>embedded computing, networking equipment, industrial automation, portable devices, and consumer electronics</strong>, where low power consumption and high-speed volatile memory are critical requirements.
NT5CC128M16ER-DI

Description: The NT5CC128M16ER-DI is a high-efficiency 2Gbit DDR3L SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC128M16DP-DI / The NT5CC128M16DP-DI is a high-performance <strong>2Gbit DDR3 SDRAM</strong> developed by <strong>Nanya Technology</strong>, designed for high-speed computing, embedded systems, and data-intensive applications. It features a memory organization of <strong>128M × 16 bits</strong>, providing efficient data handling and high bandwidth performance. <br><br>This device operates with a <strong>double data rate (DDR3) architecture</strong>, enabling data transfers on both the rising and falling edges of the clock signal, significantly increasing throughput compared to standard SDRAM. <br><br>The NT5CC128M16DP-DI supports high-speed operation with clock frequencies typically up to <strong>1600 Mbps (DDR3-1600 class)</strong>, making it suitable for demanding applications requiring fast memory access and low latency. <br><br>It operates at a nominal supply voltage of <strong>1.5V</strong>, offering improved power efficiency compared to earlier generation memory technologies. The device is compatible with <strong>SSTL_15 signaling</strong>, ensuring stable communication with modern memory controllers and processors. <br><br>Advanced features include <strong>auto-refresh, self-refresh, on-die termination (ODT), and fly-by command/address architecture</strong>, which enhance signal integrity and overall system reliability. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount package</strong>, the NT5CC128M16DP-DI is ideal for high-density PCB layouts and space-constrained designs. <br><br>The <strong>NT5CC128M16DP-DI</strong> is widely used in applications such as <strong>embedded computing, networking equipment, industrial systems, consumer electronics, and high-performance digital platforms</strong>, where reliable and high-speed volatile memory is essential.
NT5CC128M16DP-DI

Description: The NT5CC128M16DP-DI is a high-performance 2Gbit DDR3 SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT48LC8M16A2P-75 / The MT48LC8M16A2P-75 is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, communication devices, and high-speed digital applications. It features a memory organization of <strong>4 banks × 8M × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth operation. <br><br>The device operates using a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the system clock, ensuring precise timing and reliable performance in high-speed systems. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for performance-critical memory applications. <br><br>The MT48LC8M16A2P-75 includes a <strong>4-bank architecture with pipelined data access</strong>, allowing concurrent operations and improved throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency (2 or 3 cycles)</strong>, offering flexibility for various controller designs. <br><br>Operating at a supply voltage of approximately <strong>3.3V</strong>, the device is compatible with standard <strong>LVTTL interface levels</strong>, ensuring seamless integration with microcontrollers, DSPs, and FPGA-based systems. <br><br>Additional features include <strong>auto-refresh, self-refresh, and data masking (DQM)</strong>, which help maintain data integrity and optimize memory performance in dynamic environments. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC8M16A2P-75 is ideal for space-constrained PCB designs while delivering reliable electrical characteristics. <br><br>The <strong>MT48LC8M16A2P-75</strong> is widely used in applications such as <strong>embedded systems, networking equipment, industrial controllers, consumer electronics, and display systems</strong>, where cost-effective and high-speed volatile memory is required.
MT48LC8M16A2P-75

Description: The MT48LC8M16A2P-75 is a high-performance 128Mbit synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

K4B4G1646D-BCK0 / The K4B4G1646D-BCK0 is a high-performance <strong>4Gbit DDR3 synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for high-speed embedded systems, computing platforms, and industrial applications. It features a memory organization of <strong>256M × 16 bits</strong>, enabling efficient data storage and high-bandwidth processing. <br><br>The device operates using a <strong>double data rate (DDR3) architecture</strong>, transferring data on both the rising and falling edges of the clock signal, significantly increasing throughput compared to conventional SDRAM technologies. It supports data rates up to approximately <strong>2133 Mbps</strong>, making it suitable for demanding high-speed applications. <br><br>Built with an advanced <strong>8-bank internal architecture and pipelined operation</strong>, the K4B4G1646D-BCK0 enables concurrent memory access and improved system efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates at a typical supply voltage of <strong>1.5V</strong>, ensuring stable performance and compatibility with standard DDR3 memory interfaces. It is suitable for integration with microprocessors, FPGAs, and SoC-based platforms. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the K4B4G1646D-BCK0 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>K4B4G1646D-BCK0</strong> is widely used in applications such as <strong>embedded systems, networking equipment, industrial controllers, consumer electronics, and computing devices</strong>, where high-speed and cost-effective volatile memory solutions are required.
K4B4G1646D-BCK0

Description: The K4B4G1646D-BCK0 is a high-performance 4Gbit DDR3 synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 96 | MPQ: 96

K4B2G1646Q-BYK0 / The K4B2G1646Q-BYK0 is a high-performance <strong>2Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for high-speed embedded systems, computing platforms, and industrial applications. It features a memory organization of <strong>128M × 16 bits</strong>, providing efficient data storage and high-bandwidth performance. <br><br>The device operates using a <strong>double data rate (DDR3L) architecture</strong>, allowing data transfer on both rising and falling edges of the clock signal, significantly increasing throughput compared to standard SDRAM. It supports data rates up to approximately <strong>1600 Mbps</strong>, making it suitable for demanding high-speed digital systems. <br><br>Built with an advanced <strong>8-bank internal architecture and 8n prefetch</strong>, the K4B2G1646Q-BYK0 enables concurrent operations and improved memory efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (DDR3L standard)</strong>, ensuring reduced power consumption while maintaining high performance, and remains compatible with standard DDR3 interfaces. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the K4B2G1646Q-BYK0 is optimized for high-density PCB layouts and reliable signal integrity in high-speed applications. <br><br>The <strong>K4B2G1646Q-BYK0</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and computing devices</strong>, where high-speed and low-power volatile memory solutions are required.
K4B2G1646Q-BYK0

Description: The K4B2G1646Q-BYK0 is a high-performance 2Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 96 | MPQ: 96

K4B4G1646E-BCK0 / The K4B4G1646E-BCK0 is a high-performance <strong>4Gbit DDR3 synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for high-speed computing, embedded systems, and industrial applications. It features a memory organization of <strong>256M × 16 bits</strong>, enabling efficient data storage and high-bandwidth processing. <br><br>The device operates using a <strong>double data rate (DDR3) architecture</strong>, transferring data on both rising and falling edges of the clock signal to significantly increase throughput compared to conventional SDRAM technologies. It supports data rates up to approximately <strong>1600 Mbps</strong>, making it suitable for high-speed digital systems. <br><br>Built with an advanced <strong>8-bank internal architecture and pipelined operation</strong>, the K4B4G1646E-BCK0 enables concurrent memory access and improved system efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates at a typical supply voltage of <strong>1.5V</strong>, ensuring stable performance and compatibility with standard DDR3 memory interfaces while maintaining efficient power consumption. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the K4B4G1646E-BCK0 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>K4B4G1646E-BCK0</strong> is widely used in applications such as <strong>embedded systems, networking equipment, industrial controllers, consumer electronics, and computing platforms</strong>, where high-speed and cost-effective volatile memory solutions are required.
K4B4G1646E-BCK0

Description: The K4B4G1646E-BCK0 is a high-performance 4Gbit DDR3 synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 96 | MPQ: 96

K4B4G1646Q-BYK0 / The K4B4G1646Q-BYK0 is a high-performance <strong>4Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for high-speed computing, embedded systems, and industrial applications. It features a memory organization of <strong>256M × 16 bits</strong>, enabling efficient data storage and high-bandwidth operation. <br><br>The device operates using a <strong>double data rate (DDR3L) architecture</strong>, allowing data transfer on both rising and falling edges of the clock signal, significantly increasing throughput compared to conventional SDRAM. It supports data rates up to <strong>1600 MT/s</strong>, making it suitable for demanding digital systems. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the K4B4G1646Q-BYK0 enables concurrent memory operations and improved system efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (DDR3L standard)</strong>, ensuring reduced power consumption while maintaining high performance, and is also compatible with standard DDR3 environments. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the K4B4G1646Q-BYK0 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>K4B4G1646Q-BYK0</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and computing platforms</strong>, where high-speed, low-power, and cost-effective volatile memory solutions are required.
K4B4G1646Q-BYK0

Description: The K4B4G1646Q-BYK0 is a high-performance 4Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 96 | MPQ: 96

K4B8G1646D-BYK0 / The K4B8G1646D-BYK0 is a high-density <strong>8Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for high-performance embedded systems, networking equipment, and advanced computing applications. It features a memory organization of <strong>512M × 16 bits</strong>, enabling large-capacity storage and efficient parallel data processing. <br><br>The device operates using a <strong>double data rate (DDR3L) architecture</strong>, allowing data transfer on both rising and falling edges of the clock signal to significantly increase bandwidth compared to standard SDRAM technologies. It supports data rates up to approximately <strong>1600 MT/s (800 MHz clock)</strong>, making it suitable for high-speed digital systems. <br><br>Built with an advanced <strong>8-bank internal architecture and 8n prefetch</strong>, the K4B8G1646D-BYK0 enables concurrent operations and improved memory efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a low voltage range of <strong>1.35V (DDR3L)</strong> and is also compatible with <strong>1.5V DDR3 systems</strong>, ensuring reduced power consumption while maintaining high performance. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the K4B8G1646D-BYK0 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>K4B8G1646D-BYK0</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking devices, consumer electronics, and high-performance computing platforms</strong>, where high-speed, low-power, and high-capacity volatile memory is required.
K4B8G1646D-BYK0

Description: The K4B8G1646D-BYK0 is a high-density 8Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 96 | MPQ: 96

K4B8G1646E-BYK0 / The K4B8G1646E-BYK0 is a high-density <strong>8Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for high-performance embedded systems, networking equipment, and advanced computing applications. It features a memory organization of <strong>512M × 16 bits</strong>, enabling large-capacity data storage and efficient parallel data processing. <br><br>The device operates using a <strong>double data rate (DDR3L) architecture</strong>, transferring data on both rising and falling edges of the clock signal to significantly increase bandwidth compared to conventional SDRAM technologies. It supports data rates up to approximately <strong>1600 MT/s (800 MHz clock)</strong>, making it suitable for high-speed digital systems. <br><br>Built with an advanced <strong>8-bank internal architecture and 8n prefetch</strong>, the K4B8G1646E-BYK0 enables concurrent operations and improved memory efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (DDR3L standard)</strong> and is also compatible with <strong>1.5V DDR3 systems</strong>, ensuring reduced power consumption while maintaining high performance. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the K4B8G1646E-BYK0 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>K4B8G1646E-BYK0</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking devices, consumer electronics, and high-performance computing platforms</strong>, where high-speed, low-power, and high-capacity volatile memory is required.
K4B8G1646E-BYK0

Description: The K4B8G1646E-BYK0 is a high-density 8Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 96 | MPQ: 96

K4B8G1646Q-BYK0 / The K4B8G1646Q-BYK0 is a high-density <strong>8Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for high-performance embedded systems, networking equipment, and computing applications. It features a memory organization of <strong>512M × 16 bits</strong>, enabling large-capacity storage and efficient parallel data processing. <br><br>The device operates using a <strong>double data rate (DDR3L) architecture</strong>, allowing data transfer on both rising and falling edges of the clock signal, significantly increasing bandwidth compared to traditional SDRAM technologies. It supports data rates up to approximately <strong>1600 MT/s</strong>, making it suitable for high-speed digital systems. <br><br>Built with an advanced <strong>8-bank internal architecture and 8n prefetch</strong>, the K4B8G1646Q-BYK0 enables concurrent operations and improved memory efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a low voltage range of <strong>1.35V (DDR3L standard)</strong> and is also compatible with <strong>1.5V DDR3 systems</strong>, ensuring reduced power consumption while maintaining high performance. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the K4B8G1646Q-BYK0 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>K4B8G1646Q-BYK0</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking devices, consumer electronics, and high-performance computing platforms</strong>, where high-speed, low-power, and high-capacity volatile memory is required.
K4B8G1646Q-BYK0

Description: The K4B8G1646Q-BYK0 is a high-density 8Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 96 | MPQ: 96

K4S281632I-UC75 / The K4S281632I-UC75 is a reliable <strong>128Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for embedded systems, industrial electronics, and general-purpose memory applications. It features a memory organization of <strong>4 banks × 2M × 16 bits</strong>, enabling efficient parallel data processing and optimized bandwidth. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable system behavior. It supports clock frequencies up to approximately <strong>133 MHz</strong> with an access time of around <strong>5.4 ns</strong>, making it suitable for mid- to high-speed digital applications. <br><br>The K4S281632I-UC75 incorporates a <strong>4-bank internal architecture with pipelined data paths</strong>, allowing concurrent operations and improved memory throughput. It supports <strong>programmable burst modes and CAS latency options</strong>, providing flexibility for various system designs. <br><br>Operating at a supply voltage of approximately <strong>3.3V</strong> and compatible with <strong>LVTTL interface levels</strong>, the device can be easily integrated into microcontrollers, DSPs, and FPGA-based platforms. It also includes features such as <strong>auto-refresh and self-refresh</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the K4S281632I-UC75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>K4S281632I-UC75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, and consumer electronics</strong>, where stable and cost-effective volatile memory solutions are required.
K4S281632I-UC75

Description: The K4S281632I-UC75 is a reliable 128Mbit CMOS synchronous DRAM (SDRAM) d ...
Package: TRAY | MOQ: 960 | MPQ: 960

K4S281632J-UC75 / The K4S281632J-UC75 is a high-reliability <strong>128Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for embedded systems, industrial electronics, and general-purpose memory applications. It features a memory organization of <strong>4 banks × 2M × 16 bits</strong>, enabling efficient parallel data processing and improved system bandwidth. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable operation. It supports clock frequencies up to approximately <strong>133 MHz (CL=3, -75 speed grade)</strong>, making it suitable for mid- to high-speed applications. <br><br>With its <strong>4-bank internal architecture and pipelined data access</strong>, the K4S281632J-UC75 allows concurrent operations such as interleaved read and write cycles, improving overall memory throughput. It supports <strong>programmable burst lengths and CAS latency settings</strong>, offering flexibility for various system designs. <br><br>The device operates at a typical supply voltage of <strong>3.3V</strong> and is compatible with <strong>LVTTL interface levels</strong>, ensuring easy integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh and self-refresh functions</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the K4S281632J-UC75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>K4S281632J-UC75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, and consumer electronics</strong>, where stable and cost-effective high-speed volatile memory is required.
K4S281632J-UC75

Description: The K4S281632J-UC75 is a high-reliability 128Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 960 | MPQ: 960

K4S281632K-UC75 / The K4S281632K-UC75 is a high-performance <strong>128Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for embedded systems, industrial electronics, and general-purpose memory applications. It features a memory organization of <strong>4 banks × 2M × 16 bits</strong>, enabling efficient parallel data processing and optimized system bandwidth. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>133 MHz (CL=3, -75 speed grade)</strong>, making it suitable for mid- to high-speed digital applications. <br><br>The K4S281632K-UC75 incorporates a <strong>4-bank internal architecture with pipelined data paths</strong>, allowing concurrent operations and improved memory throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various system designs. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and compatible with <strong>LVTTL interface levels</strong>, the device ensures seamless integration with microcontrollers, DSPs, and FPGA-based platforms. It also includes features such as <strong>auto-refresh and self-refresh</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the K4S281632K-UC75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>K4S281632K-UC75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where stable and cost-effective high-speed volatile memory is required.
K4S281632K-UC75

Description: The K4S281632K-UC75 is a high-performance 128Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 960 | MPQ: 960

K4S281632N-UC75 / The K4S281632N-UC75 is a high-reliability <strong>128Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for embedded systems, industrial electronics, and general-purpose memory applications. It features a memory organization of <strong>4 banks × 2M × 16 bits</strong>, enabling efficient parallel data processing and stable system performance. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring predictable timing and reliable high-speed operation. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed digital systems. <br><br>Featuring a <strong>4-bank internal architecture with pipelined data access</strong>, the K4S281632N-UC75 allows concurrent memory operations, improving throughput and efficiency. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility across different system designs. <br><br>The device operates at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, ensuring easy integration with microcontrollers, DSPs, and FPGA-based platforms. It also includes <strong>auto-refresh and self-refresh functions</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the K4S281632N-UC75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>K4S281632N-UC75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, and consumer electronics</strong>, where stable and cost-effective high-speed volatile memory is required.
K4S281632N-UC75

Description: The K4S281632N-UC75 is a high-reliability 128Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 960 | MPQ: 960

K4S561632E-UC75 / The K4S561632E-UC75 is a high-performance <strong>256Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for embedded systems, industrial electronics, and high-speed digital applications. It features a memory organization of <strong>4 banks × 4M × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth operation. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed memory applications. <br><br>Built with an advanced <strong>4-bank internal architecture with pipelined data paths</strong>, the K4S561632E-UC75 allows concurrent operations and improved memory throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency (2 or 3 cycles)</strong>, providing flexibility for various system designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes features such as <strong>auto-refresh and self-refresh</strong> to maintain data integrity and ensure reliable operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the K4S561632E-UC75 is optimized for space-constrained PCB designs while maintaining reliable electrical performance. <br><br>The <strong>K4S561632E-UC75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where stable and cost-effective high-speed volatile memory is required.
K4S561632E-UC75

Description: The K4S561632E-UC75 is a high-performance 256Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 960 | MPQ: 960

K4S561632H-UC75 / The K4S561632H-UC75 is a high-performance <strong>256Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for embedded systems, industrial electronics, and high-speed digital applications. It features a memory organization of <strong>4 banks × 4M × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth operation. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed memory applications. <br><br>Built with an advanced <strong>4-bank internal architecture with pipelined data paths</strong>, the K4S561632H-UC75 allows concurrent operations and improved memory throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency (2 or 3 cycles)</strong>, providing flexibility for various system designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes features such as <strong>auto-refresh and self-refresh</strong> to maintain data integrity and ensure reliable operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the K4S561632H-UC75 is optimized for space-constrained PCB designs while maintaining reliable electrical performance. <br><br>The <strong>K4S561632H-UC75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where stable and cost-effective high-speed volatile memory is required.
K4S561632H-UC75

Description: The K4S561632H-UC75 is a high-performance 256Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 960 | MPQ: 960

K4S561632N-UC75 / The K4S561632N-UC75 is a high-performance <strong>256Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for embedded systems, industrial electronics, and high-speed digital applications. It features a memory organization of <strong>4 banks × 4M × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth operation. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed memory applications. <br><br>Built with an advanced <strong>4-bank internal architecture with pipelined data paths</strong>, the K4S561632N-UC75 allows concurrent operations and improved memory throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various system designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes features such as <strong>auto-refresh and self-refresh</strong> to maintain data integrity and ensure reliable operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the K4S561632N-UC75 is optimized for space-constrained PCB designs while maintaining reliable electrical performance. <br><br>The <strong>K4S561632N-UC75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where stable and cost-effective high-speed volatile memory is required.
K4S561632N-UC75

Description: The K4S561632N-UC75 is a high-performance 256Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 960 | MPQ: 960

K4S641632H-UC75 / The K4S641632H-UC75 is a high-performance <strong>256Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for embedded systems, industrial electronics, and high-speed digital applications. It features a memory organization of <strong>4 banks × 4M × 16 bits</strong>, enabling efficient parallel data processing and improved bandwidth performance. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable system operation. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed applications. <br><br>With its <strong>4-bank internal architecture and pipelined data access</strong>, the K4S641632H-UC75 allows concurrent memory operations, improving throughput and efficiency. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency (2 or 3 cycles)</strong>, providing flexibility for various system designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based platforms. It also includes <strong>auto-refresh and self-refresh features</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the K4S641632H-UC75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>K4S641632H-UC75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where stable and cost-effective high-speed volatile memory is required.
K4S641632H-UC75

Description: The K4S641632H-UC75 is a high-performance 256Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 960 | MPQ: 960

K4S641632J-UC75 / The K4S641632J-UC75 is a reliable <strong>64Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for embedded systems, industrial electronics, and general-purpose high-speed memory applications. It features a memory organization of <strong>4 banks × 1M × 16 bits</strong>, enabling efficient parallel data processing and optimized bandwidth performance. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the system clock, ensuring stable timing and predictable operation. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed digital systems. <br><br>Built with a <strong>4-bank internal architecture and pipelined data access</strong>, the K4S641632J-UC75 allows concurrent memory operations, improving throughput and system efficiency. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency (2 or 3 cycles)</strong>, offering flexibility for various memory controller designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based platforms. It also includes <strong>auto-refresh and self-refresh features</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the K4S641632J-UC75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>K4S641632J-UC75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, and consumer electronics</strong>, where stable and cost-effective volatile memory solutions are required.
K4S641632J-UC75

Description: The K4S641632J-UC75 is a reliable 64Mbit CMOS synchronous DRAM (SDRAM) de ...
Package: TRAY | MOQ: 960 | MPQ: 960

K4S641632K-UC75 / The K4S641632K-UC75 is a high-performance <strong>256Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for embedded systems, industrial electronics, and high-speed digital applications. It features a memory organization of <strong>4 banks × 4M × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth performance. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable system operation. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed applications. <br><br>With its <strong>4-bank internal architecture and pipelined data access</strong>, the K4S641632K-UC75 allows concurrent memory operations, improving throughput and overall system efficiency. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency (2 or 3 cycles)</strong>, offering flexibility for various memory controller designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, ensuring seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh and self-refresh features</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the K4S641632K-UC75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>K4S641632K-UC75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where stable and cost-effective high-speed volatile memory is required.
K4S641632K-UC75

Description: The K4S641632K-UC75 is a high-performance 256Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 960 | MPQ: 960

MT41K128M16HA-125 / The MT41K128M16HA-125 is a high-performance <strong>2Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, networking equipment, and industrial applications. It features a memory organization of <strong>128M × 16 bits</strong>, enabling efficient parallel data processing and high-density storage. <br><br>The device operates using a <strong>double data rate (DDR3L) architecture</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly increase bandwidth compared to conventional SDRAM technologies. It supports clock frequencies up to approximately <strong>800 MHz (1600 MT/s)</strong>, ensuring high-speed performance. <br><br>Built with an advanced <strong>8-bank internal architecture and 8n prefetch</strong>, the MT41K128M16HA-125 enables concurrent memory operations and improved system efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, offering flexibility for modern memory controller designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V</strong>, reducing power consumption while maintaining high performance, and is compatible with standard DDR3 interfaces. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the MT41K128M16HA-125 is optimized for high-density PCB layouts and reliable signal integrity in high-speed applications. <br><br>The <strong>MT41K128M16HA-125</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, consumer electronics, and computing platforms</strong>, where high-speed, low-power, and high-capacity volatile memory is required.
MT41K128M16HA-125

Description: The MT41K128M16HA-125 is a high-performance 2Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT41K128M16JT-125 / The MT41K128M16JT-125 is a high-performance <strong>2Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, networking equipment, and industrial applications. It features a memory organization of <strong>128M × 16 bits</strong>, providing efficient parallel data processing and high-density storage. <br><br>The device operates using a <strong>double data rate (DDR3L) architecture with 8n prefetch</strong>, enabling data transfers on both rising and falling edges of the clock signal to significantly increase bandwidth. It supports clock speeds up to <strong>800 MHz (1600 MT/s data rate)</strong>, ensuring high-speed performance in demanding applications. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT41K128M16JT-125 allows concurrent operations and improved memory throughput. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, offering flexibility for modern memory controller designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (typ. 1.35V)</strong>, reducing power consumption while maintaining high performance, and is backward compatible with standard <strong>1.5V DDR3 systems</strong>. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the MT41K128M16JT-125 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT41K128M16JT-125</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, automotive electronics, and consumer electronics</strong>, where high-speed, low-power, and reliable volatile memory is required.
MT41K128M16JT-125

Description: The MT41K128M16JT-125 is a high-performance 2Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT41K128M16LY-125 / The MT41K128M16LY-125 is a high-performance <strong>2Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial applications, and high-speed digital platforms. It features a memory organization of <strong>128M × 16 bits</strong>, providing efficient parallel data processing and reliable high-density storage. <br><br>The device utilizes a <strong>double data rate (DDR3L) architecture with 8n prefetch</strong>, enabling data transfer on both rising and falling edges of the clock signal for increased bandwidth. It supports data rates up to <strong>1600 MT/s (800 MHz clock)</strong>, ensuring fast and efficient memory performance. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT41K128M16LY-125 enables concurrent memory operations and improved system throughput. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (typ. 1.35V)</strong>, reducing power consumption while maintaining high performance, and is backward compatible with <strong>1.5V DDR3 systems</strong>. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the MT41K128M16LY-125 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT41K128M16LY-125</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking equipment, automotive electronics, and consumer devices</strong>, where high-speed, low-power, and high-reliability volatile memory is required.
MT41K128M16LY-125

Description: The MT41K128M16LY-125 is a high-performance 2Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT41K1G16HA-125 / The MT41K1G16HA-125 is a high-density <strong>16Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for high-performance embedded systems, networking equipment, and advanced computing applications. It features a memory organization of <strong>1G × 16 bits</strong>, enabling large-capacity data storage and efficient parallel processing. <br><br>The device utilizes a <strong>double data rate (DDR3L) architecture with 8n prefetch</strong>, allowing data transfer on both rising and falling edges of the clock signal, significantly increasing bandwidth compared to conventional SDRAM. It supports clock frequencies up to approximately <strong>800 MHz (1600 MT/s)</strong>, ensuring high-speed operation in demanding systems. <br><br>Built with an advanced <strong>8-bank internal architecture and dual-rank (TwinDie) configuration</strong>, the MT41K1G16HA-125 enables concurrent operations and improved memory throughput. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (typ. 1.35V)</strong>, reducing power consumption while maintaining high performance, and remains compatible with <strong>1.5V DDR3 systems</strong>. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the MT41K1G16HA-125 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT41K1G16HA-125</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking infrastructure, data processing systems, and high-performance computing platforms</strong>, where high-speed, low-power, and high-capacity volatile memory is required.
MT41K1G16HA-125

Description: The MT41K1G16HA-125 is a high-density 16Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT41K256M16HA-125 / The MT41K256M16HA-125 is a high-performance <strong>4Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, networking equipment, and industrial applications requiring high-speed and reliable memory solutions. It features a memory organization of <strong>256M × 16 bits</strong>, enabling efficient parallel data processing and high-density storage. <br><br>The device operates using a <strong>double data rate (DDR3L) architecture with 8n prefetch</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly increase bandwidth. It supports clock speeds up to <strong>800 MHz (1600 MT/s data rate)</strong>, ensuring high-speed operation in demanding applications. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT41K256M16HA-125 enables concurrent memory operations and improved system efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (typ. 1.35V)</strong>, reducing power consumption while maintaining high performance, and is backward compatible with standard <strong>1.5V DDR3 systems</strong>. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the MT41K256M16HA-125 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT41K256M16HA-125</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, automotive electronics, and high-performance computing platforms</strong>, where high-speed, low-power, and high-capacity volatile memory is required.
MT41K256M16HA-125

Description: The MT41K256M16HA-125 is a high-performance 4Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT41K256M16LY-107 / The MT41K256M16LY-107 is a high-performance <strong>4Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for high-speed embedded systems, networking equipment, and industrial applications. It features a memory organization of <strong>256M × 16 bits</strong>, providing high-density storage with efficient parallel data processing. <br><br>The device utilizes a <strong>double data rate (DDR3L) architecture with 8n prefetch</strong>, enabling data transfers on both rising and falling edges of the clock signal for significantly increased bandwidth. It supports clock frequencies up to approximately <strong>933 MHz (1866 MT/s)</strong>, making it suitable for high-performance memory applications. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT41K256M16LY-107 allows concurrent operations and improved memory efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, offering flexibility for modern system designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (typ. 1.35V)</strong>, reducing power consumption while maintaining high performance, and is backward compatible with standard <strong>1.5V DDR3 systems</strong>. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the MT41K256M16LY-107 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT41K256M16LY-107</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, automotive electronics, and high-performance computing platforms</strong>, where high-speed, low-power, and high-capacity volatile memory is required.
MT41K256M16LY-107

Description: The MT41K256M16LY-107 is a high-performance 4Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT47H512M16RT-25E / The MT47H512M16RT-25E is a high-density <strong>8Gbit DDR2 synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, networking equipment, and industrial applications requiring reliable high-capacity memory solutions. It features a memory organization of <strong>512M × 16 bits</strong>, enabling efficient parallel data processing and large-scale data storage. <br><br>The device utilizes a <strong>double data rate (DDR2) architecture with 4n prefetch</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly increase bandwidth. It supports clock frequencies up to approximately <strong>400 MHz (800 MT/s data rate)</strong>, ensuring stable and efficient performance in high-speed applications. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT47H512M16RT-25E enables concurrent memory operations and improved system throughput. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a supply voltage range of <strong>1.7V to 1.9V (typ. 1.8V)</strong>, offering a balance between performance and power efficiency, and is fully compliant with standard <strong>DDR2 memory interfaces</strong>. <br><br>Packaged in a compact <strong>84-ball FBGA surface-mount form factor</strong>, the MT47H512M16RT-25E is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT47H512M16RT-25E</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking equipment, telecommunications infrastructure, and high-performance consumer electronics</strong>, where stable, high-speed, and high-capacity volatile memory is required.
MT47H512M16RT-25E

Description: The MT47H512M16RT-25E is a high-density 8Gbit DDR2 synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT48LC64M16A2TG-75 / The MT48LC64M16A2TG-75 is a high-performance <strong>1Gbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and networking applications requiring reliable memory performance. It features a memory organization of <strong>4 banks × 16M × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth operation. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring stable timing and predictable system behavior. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed digital applications. <br><br>Built with an advanced <strong>4-bank internal architecture and pipelined data access</strong>, the MT48LC64M16A2TG-75 allows concurrent operations and improved memory throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various memory controller designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, ensuring seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh and self-refresh features</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC64M16A2TG-75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>MT48LC64M16A2TG-75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, telecommunications devices, and consumer electronics</strong>, where stable and cost-effective high-speed volatile memory is required.
MT48LC64M16A2TG-75

Description: The MT48LC64M16A2TG-75 is a high-performance 1Gbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT48LC64M16A2P-75 / The MT48LC64M16A2P-75 is a high-performance <strong>1Gbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and networking applications. It features a memory organization of <strong>4 banks × 16M × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth performance. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring stable timing and predictable operation. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed applications. <br><br>Built with an advanced <strong>4-bank internal architecture and pipelined data access</strong>, the MT48LC64M16A2P-75 allows concurrent memory operations and improved system throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various memory controller designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh and self-refresh features</strong> to maintain data integrity and reliable operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC64M16A2P-75 is optimized for space-constrained PCB designs while maintaining stable electrical performance. <br><br>The <strong>MT48LC64M16A2P-75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, telecommunications devices, and consumer electronics</strong>, where reliable and cost-effective high-speed volatile memory is required.
MT48LC64M16A2P-75

Description: The MT48LC64M16A2P-75 is a high-performance 1Gbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT48LC4M16A2P-75 / The MT48LC4M16A2P-75 is a reliable <strong>64Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication devices. It features a memory organization of <strong>4 banks × 1M × 16 bits</strong>, enabling efficient parallel data processing and optimized memory bandwidth. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring stable timing and predictable system performance. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for a wide range of digital applications. <br><br>Built with an advanced <strong>4-bank internal architecture and pipelined operation</strong>, the MT48LC4M16A2P-75 allows concurrent memory access and improved system throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various system designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh and self-refresh features</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC4M16A2P-75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>MT48LC4M16A2P-75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where stable and cost-effective high-speed volatile memory is required.
MT48LC4M16A2P-75

Description: The MT48LC4M16A2P-75 is a reliable 64Mbit CMOS synchronous DRAM (SDRAM) d ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT48LC32M16A2TG-75 / The MT48LC32M16A2TG-75 is a high-performance <strong>512Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications. It features a memory organization of <strong>4 banks × 8M × 16 bits</strong>, enabling efficient parallel data transfer and high bandwidth performance. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring stable timing and predictable operation. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed applications. <br><br>Built with an advanced <strong>quad-bank internal architecture and pipelined data access</strong>, the MT48LC32M16A2TG-75 allows concurrent memory operations and improved system throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various memory controller designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh, self-refresh, and auto-precharge features</strong> to maintain data integrity and optimize performance. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC32M16A2TG-75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>MT48LC32M16A2TG-75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, telecommunications devices, and consumer electronics</strong>, where stable and cost-effective high-speed volatile memory is required.
MT48LC32M16A2TG-75

Description: The MT48LC32M16A2TG-75 is a high-performance 512Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT48LC32M16A2P-75 / The MT48LC32M16A2P-75 is a high-performance <strong>512Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications. It features a memory organization of <strong>4 banks × 8M × 16 bits</strong>, enabling efficient parallel data transfer and high bandwidth performance. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable operation. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed applications. <br><br>Built with an advanced <strong>4-bank internal architecture and pipelined data access</strong>, the MT48LC32M16A2P-75 allows concurrent memory operations and improved system throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various memory controller designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh and self-refresh features</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC32M16A2P-75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>MT48LC32M16A2P-75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, telecommunications devices, and consumer electronics</strong>, where stable and cost-effective high-speed volatile memory is required.
MT48LC32M16A2P-75

Description: The MT48LC32M16A2P-75 is a high-performance 512Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT48LC16M8A2P-75 / The MT48LC16M8A2P-75 is a high-performance <strong>128Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication devices. It features a memory organization of <strong>4 banks × 4M × 8 bits</strong>, enabling efficient parallel data processing and optimized memory bandwidth. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed digital applications. <br><br>Built with an advanced <strong>4-bank internal architecture and pipelined operation</strong>, the MT48LC16M8A2P-75 allows efficient burst data transfers and improved system throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency (2 or 3 cycles)</strong>, providing flexibility for various memory controller designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh and self-refresh features</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M8A2P-75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>MT48LC16M8A2P-75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where stable and cost-effective high-speed volatile memory is required.
MT48LC16M8A2P-75

Description: The MT48LC16M8A2P-75 is a high-performance 128Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT48LC2M32B2P-75 / The MT48LC2M32B2P-75 is a high-performance <strong>64Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication devices. It features a memory organization of <strong>4 banks × 512K × 32 bits</strong>, enabling efficient parallel data transfer and optimized memory bandwidth. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all signals are registered on the rising edge of the system clock, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for a wide range of digital applications. <br><br>Built with an advanced <strong>quad-bank architecture and pipelined operation</strong>, the MT48LC2M32B2P-75 allows concurrent memory access and improves overall system throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency (1, 2, or 3 cycles)</strong>, providing flexibility for system designers. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, ensuring seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh and self-refresh capabilities</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>86-pin TSOP-II surface-mount form factor</strong>, the MT48LC2M32B2P-75 is optimized for high-density PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>MT48LC2M32B2P-75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, telecommunications devices, and consumer electronics</strong>, where stable and cost-effective high-speed volatile memory is required.
MT48LC2M32B2P-75

Description: The MT48LC2M32B2P-75 is a high-performance 64Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2TG-75 / The MT48LC16M16A2TG-75 is a high-performance <strong>256Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and networking applications. It features a memory organization of <strong>4 banks × 4M × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth operation. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed memory applications. <br><br>Built with an advanced <strong>4-bank internal architecture and pipelined operation</strong>, the MT48LC16M16A2TG-75 allows efficient burst data transfers and improved system throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various system designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh, self-refresh, and auto precharge features</strong> to maintain data integrity and optimize performance. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2TG-75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>MT48LC16M16A2TG-75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where stable and cost-effective high-speed volatile memory is required.
MT48LC16M16A2TG-75

Description: The MT48LC16M16A2TG-75 is a high-performance 256Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-75 / The MT48LC16M16A2P-75 is a high-performance <strong>256Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and networking applications. It features a memory organization of <strong>4 banks × 4M × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth operation. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed memory applications. <br><br>Built with an advanced <strong>4-bank internal architecture and burst-oriented data access</strong>, the MT48LC16M16A2P-75 allows efficient sequential data transfers and improved system throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various memory controller designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh and self-refresh features</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>MT48LC16M16A2P-75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where stable and cost-effective high-speed volatile memory is required.
MT48LC16M16A2P-75

Description: The MT48LC16M16A2P-75 is a high-performance 256Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT47H64M16HR-25E / The MT47H64M16HR-25E is a high-performance <strong>1Gbit DDR2 synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and networking applications requiring reliable and efficient memory solutions. It features a memory organization of <strong>64M × 16 bits</strong>, enabling optimized parallel data processing and efficient bandwidth utilization. <br><br>The device utilizes a <strong>double data rate (DDR2) architecture with 4n prefetch</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly increase throughput compared to conventional SDRAM. It supports clock frequencies up to approximately <strong>400 MHz (800 MT/s data rate)</strong>, ensuring stable performance in high-speed digital systems. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT47H64M16HR-25E enables concurrent memory operations and improved system efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, offering flexibility for modern memory controller designs. <br><br>The device operates within a supply voltage range of <strong>1.7V to 1.9V (typ. 1.8V)</strong>, ensuring a balance between performance and power efficiency, and is fully compliant with standard <strong>DDR2 memory interfaces</strong>. <br><br>Packaged in a compact <strong>84-ball FBGA surface-mount form factor</strong>, the MT47H64M16HR-25E is optimized for high-density PCB layouts and reliable signal integrity in high-speed applications. <br><br>The <strong>MT47H64M16HR-25E</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking equipment, telecommunications systems, and consumer electronics</strong>, where stable, high-speed, and cost-effective volatile memory is required.
MT47H64M16HR-25E

Description: The MT47H64M16HR-25E is a high-performance 1Gbit DDR2 synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT47H512M8HQ-25E / The MT47H512M8HQ-25E is a high-performance <strong>4Gbit DDR2 synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, networking equipment, and industrial applications requiring reliable high-speed memory. It features a memory organization of <strong>512M × 8 bits</strong>, enabling efficient parallel data processing and optimized bandwidth performance. <br><br>The device utilizes a <strong>double data rate (DDR2) architecture with 4n prefetch</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly increase throughput compared to standard SDRAM. It supports clock frequencies up to approximately <strong>400 MHz (800 MT/s data rate)</strong>, making it suitable for mid- to high-speed digital systems. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT47H512M8HQ-25E enables concurrent memory operations and improved system efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, offering flexibility for modern memory controller designs. <br><br>The device operates within a supply voltage range of <strong>1.7V to 1.9V (typ. 1.8V)</strong>, ensuring a balance between performance and power efficiency, and is fully compliant with standard <strong>DDR2 memory interfaces</strong>. <br><br>Packaged in a compact <strong>60-ball FBGA surface-mount form factor</strong>, the MT47H512M8HQ-25E is optimized for high-density PCB layouts and reliable signal integrity in high-speed applications. <br><br>The <strong>MT47H512M8HQ-25E</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking equipment, telecommunications systems, and consumer electronics</strong>, where stable, high-speed, and cost-effective volatile memory is required.
MT47H512M8HQ-25E

Description: The MT47H512M8HQ-25E is a high-performance 4Gbit DDR2 synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT41K64M16JT-125 / The MT41K64M16JT-125 is a high-performance <strong>1Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, networking equipment, and industrial applications. It features a memory organization of <strong>64M × 16 bits</strong>, enabling efficient parallel data processing and compact memory integration. <br><br>The device operates using a <strong>double data rate (DDR3L) architecture with 8n prefetch</strong>, allowing data transfer on both rising and falling edges of the clock signal for significantly increased bandwidth. It supports clock frequencies up to approximately <strong>800 MHz (1600 MT/s)</strong>, ensuring high-speed operation in demanding applications. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT41K64M16JT-125 enables concurrent memory operations and improved system throughput. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (DDR3L standard)</strong>, reducing power consumption while maintaining high performance, and remains compatible with standard <strong>1.5V DDR3 systems</strong>. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the MT41K64M16JT-125 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT41K64M16JT-125</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, automotive electronics, and consumer electronics</strong>, where high-speed, low-power, and reliable volatile memory is required.
MT41K64M16JT-125

Description: The MT41K64M16JT-125 is a high-performance 1Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT47H128M16RT-25E / The MT47H128M16RT-25E is a high-performance <strong>2Gbit DDR2 synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and networking applications requiring reliable high-speed memory. It features a memory organization of <strong>128M × 16 bits</strong>, enabling efficient parallel data processing and high-density storage. <br><br>The device utilizes a <strong>double data rate (DDR2) architecture with 4n prefetch</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly increase bandwidth. It supports clock frequencies up to approximately <strong>400 MHz (800 MT/s data rate)</strong>, ensuring stable performance in high-speed applications. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT47H128M16RT-25E enables concurrent memory operations and improved system throughput. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates at a supply voltage range of <strong>1.7V to 1.9V (typ. 1.8V)</strong>, balancing performance and power efficiency, and is fully compliant with standard <strong>DDR2 memory interfaces</strong>. <br><br>Packaged in a compact <strong>84-ball FBGA surface-mount form factor</strong>, the MT47H128M16RT-25E is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT47H128M16RT-25E</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking equipment, telecommunications systems, and consumer electronics</strong>, where stable and cost-effective high-speed volatile memory is required.
MT47H128M16RT-25E

Description: The MT47H128M16RT-25E is a high-performance 2Gbit DDR2 synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT47H128M16JT-25E / The MT47H128M16JT-25E is a high-performance <strong>2Gbit DDR2 synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, networking equipment, and industrial applications requiring reliable high-speed memory. It features a memory organization of <strong>128M × 16 bits</strong>, enabling efficient parallel data processing and high-density storage. <br><br>The device utilizes a <strong>double data rate (DDR2) architecture</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly increase bandwidth. It supports clock frequencies up to approximately <strong>400 MHz (800 MT/s data rate)</strong>, ensuring stable performance in mid- to high-speed systems. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT47H128M16JT-25E enables concurrent operations and improved memory throughput. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates at a typical supply voltage of <strong>1.8V</strong>, ensuring a balance between performance and power consumption, and is fully compliant with standard <strong>DDR2 memory interfaces</strong>. <br><br>Packaged in a compact <strong>84-ball FBGA surface-mount form factor</strong>, the MT47H128M16JT-25E is optimized for high-density PCB layouts and reliable signal integrity in high-speed applications. <br><br>The <strong>MT47H128M16JT-25E</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, telecommunications equipment, and consumer electronics</strong>, where stable and cost-effective high-speed volatile memory is required.
MT47H128M16JT-25E

Description: The MT47H128M16JT-25E is a high-performance 2Gbit DDR2 synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT47H128M8HQ-25E / The MT47H128M8HQ-25E is a reliable <strong>1Gbit DDR2 synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial applications, and networking equipment requiring stable and cost-effective memory solutions. It features a memory organization of <strong>128M × 8 bits</strong>, enabling efficient parallel data handling and optimized bandwidth. <br><br>The device utilizes a <strong>double data rate (DDR2) architecture with 4n prefetch</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly improve throughput compared to standard SDRAM. It supports clock frequencies up to approximately <strong>400 MHz (800 MT/s data rate)</strong>, making it suitable for mid- to high-speed digital systems. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT47H128M8HQ-25E enables concurrent memory operations and improved system performance. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, offering flexibility for modern memory controller designs. <br><br>The device operates within a supply voltage range of <strong>1.7V to 1.9V (typ. 1.8V)</strong>, ensuring a balance between performance and power efficiency, and is fully compliant with standard <strong>DDR2 memory interfaces</strong>. <br><br>Packaged in a compact <strong>60-ball FBGA surface-mount form factor</strong>, the MT47H128M8HQ-25E is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT47H128M8HQ-25E</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking devices, telecommunications equipment, and consumer electronics</strong>, where stable, high-speed, and cost-effective volatile memory is required.
MT47H128M8HQ-25E

Description: The MT47H128M8HQ-25E is a reliable 1Gbit DDR2 synchronous DRAM (SDRAM) de ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT41K512M16TW-107 / The MT41K512M16TW-107 is a high-density <strong>8Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for high-performance embedded systems, networking equipment, and industrial applications. It features a memory organization of <strong>512M × 16 bits</strong>, enabling large-capacity data storage and efficient parallel processing. <br><br>The device utilizes a <strong>double data rate (DDR3L) architecture with 8n prefetch</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly increase bandwidth. It supports clock frequencies up to approximately <strong>933 MHz (1866 MT/s)</strong>, making it suitable for high-speed computing and communication systems. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT41K512M16TW-107 enables concurrent memory operations and improved system throughput. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (typ. 1.35V)</strong>, reducing power consumption while maintaining high performance, and is compatible with standard <strong>1.5V DDR3 systems</strong>. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the MT41K512M16TW-107 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT41K512M16TW-107</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, automotive electronics, and high-performance computing platforms</strong>, where high-speed, low-power, and high-capacity volatile memory is required.
MT41K512M16TW-107

Description: The MT41K512M16TW-107 is a high-density 8Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000













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