All Products
Accelerometer
ADC
Amplifier
Antenna
Audio IC
Battery Management
Buzzer
CAN Transceiver
Ceramic Capacitor
Circuit Protection
Color Sensor
Connector
Converter
CPLD
Current Sensor
DAC
Data Storage
Digital Potentiometer
Diode
DRAM
DSP
Earthquake Sensor
Electrolytic Capacitor
Ethernet Controller
Ethernet Module
Film Capacitor
FLASH
Flyback Controller
FPGA
Gas Sensor
Gate Driver
Hall Effect Sensor
Isolated Amplifier
LCD Display
LCD Driver
LED
LED Driver
Line Filter
Logic IC
Memory
Metering IC
Microcontroller
Motor Driver
OLED Display
OpAmp
Optical Sensor
Optocoupler
Oscillator
PHY
PLC IC
Port Expander
Power Switch
Pressure Sensor
Relay
Reset IC
RF & Wifi Module
RF Transceiver MCU
RFID
RS232 Transceiver
RS485 Transceiver
RTC Real Time Clock
SDRAM
SMPS Controller
Solid State Relay
Special IC
Tantalum Capacitor
Temperature Sensor
TH Sensor
Timer
Touch IC
Transformer
Transistor
Triac
TVS
USB UART
Varistor
Voltage Reference
Voltage Regulator
Wirewounded Inductor

BZX55C10 / The BZX55C10 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C10

Description: The BZX55C10 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C9V1 / The BZX55C9V1 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C9V1

Description: The BZX55C9V1 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C8V2 / The BZX55C8V2 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C8V2

Description: The BZX55C8V2 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C7V5 / The BZX55C7V5 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C7V5

Description: The BZX55C7V5 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C6V8 / The BZX55C6V8 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C6V8

Description: The BZX55C6V8 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C6V2 / The BZX55C6V2 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C6V2

Description: The BZX55C6V2 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C5V6 / The BZX55C5V6 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C5V6

Description: The BZX55C5V6 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C4V7 / The BZX55C4V7 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C4V7

Description: The BZX55C4V7 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C4V3 / The BZX55C4V3 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C4V3

Description: The BZX55C4V3 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C3V9 / The BZX55C3V9 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C3V9

Description: The BZX55C3V9 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C3V6 / The BZX55C3V6 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C3V6

Description: The BZX55C3V6 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C3V3 / The BZX55C3V3 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C3V3

Description: The BZX55C3V3 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C3V0 / The BZX55C3V0 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C3V0

Description: The BZX55C3V0 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C2V7 / The BZX55C2V7 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C2V7

Description: The BZX55C2V7 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BZX55C2V4 / The BZX55C2V4 is a small-signal Zener diode designed for voltage regulation and protection applications.
BZX55C2V4

Description: The BZX55C2V4 is a small-signal Zener diode designed for voltage regulation and protection ...
Package: T&R | MOQ: 3000 | MPQ: 3000

ESP32-S3-MINI-1U-N8 / The ESP32-S3-MINI-1U is a compact and high-performance <strong>Wi-Fi and Bluetooth LE microcontroller module</strong> developed by <strong>Espressif Systems</strong>, designed for space-constrained IoT and embedded applications requiring enhanced RF performance. It is powered by a <strong>dual-core Xtensa LX7 processor</strong>, delivering strong processing capability for real-time data processing and control tasks. <br><br>The module supports <strong>2.4 GHz Wi-Fi (802.11 b/g/n) and Bluetooth 5 (LE)</strong>, ensuring reliable wireless connectivity across a wide range of applications. This variant features a <strong>U.FL connector for external antenna support</strong>, allowing improved signal strength and extended communication range in challenging environments. <br><br>The ESP32-S3-MINI-1U includes advanced features such as <strong>vector instructions for AI acceleration</strong>, enabling efficient edge computing and machine learning tasks. It also supports <strong>USB OTG interface</strong>, providing direct USB connectivity without additional hardware. <br><br>The module offers a wide range of interfaces including <strong>SPI, I2C, UART, I2S, PWM, ADC, and GPIO</strong>, ensuring flexible integration with various peripherals and system designs. <br><br>With support for <strong>low-power operation modes</strong> and advanced security features like <strong>secure boot and flash encryption</strong>, the ESP32-S3-MINI-1U is suitable for secure and energy-efficient applications. <br><br>Packaged in a compact <strong>SMD module with external antenna interface</strong>, it is ideal for high-density PCB layouts and designs requiring flexible antenna placement. <br><br>The <strong>ESP32-S3-MINI-1U</strong> is widely used in applications such as <strong>IoT devices, smart home systems, industrial automation, wearable electronics, wireless sensors, and AI edge devices</strong>, where compact size and extended wireless range are critical.
ESP32-S3-MINI-1U-N8

Description: The ESP32-S3-MINI-1U is a compact and high-performance Wi-Fi and Bluetooth LE micr ...
Package: TRAY | MOQ: 650 | MPQ: 650

ESP32-S3-MINI-1 / The ESP32-S3-MINI-1 is a compact and high-performance <strong>Wi-Fi and Bluetooth LE microcontroller module</strong> developed by <strong>Espressif Systems</strong>, designed for space-constrained IoT and embedded applications. It is powered by a <strong>dual-core Xtensa LX7 processor</strong>, delivering enhanced processing capabilities for real-time data processing and control tasks. <br><br>The module integrates <strong>2.4 GHz Wi-Fi (802.11 b/g/n) and Bluetooth 5 (LE)</strong>, providing reliable wireless connectivity for a wide range of smart devices and connected systems. <br><br>Its compact form factor makes it ideal for designs where PCB space is limited, without compromising on performance or functionality. <br><br>The ESP32-S3-MINI-1 supports a wide range of interfaces including <strong>SPI, I2C, UART, I2S, PWM, ADC, and GPIO</strong>, enabling flexible integration with sensors, displays, and other peripherals. <br><br>Advanced features such as <strong>vector instructions for AI acceleration</strong>, <strong>USB OTG support</strong>, and <strong>low-power operation modes</strong> enhance its suitability for modern embedded and AIoT applications. <br><br>Security features including <strong>secure boot and flash encryption</strong> provide strong protection for connected devices. <br><br>Packaged in a compact <strong>SMD module with castellated edges</strong>, the ESP32-S3-MINI-1 simplifies integration and accelerates product development. <br><br>The <strong>ESP32-S3-MINI-1</strong> is widely used in applications such as <strong>IoT devices, wearable electronics, smart home systems, wireless sensors, AI edge devices, and industrial automation</strong>, where compact size and high performance are critical.
ESP32-S3-MINI-1

Description: The ESP32-S3-MINI-1 is a compact and high-performance Wi-Fi and Bluetooth LE micro ...
Package: TRAY | MOQ: 650 | MPQ: 650

ESP32-S3-WROOM-2 / The ESP32-S3-WROOM-2 is an advanced <strong>Wi-Fi and Bluetooth LE microcontroller module</strong> developed by <strong>Espressif Systems</strong>, designed for high-performance IoT, AI, and embedded applications requiring additional memory resources. It is powered by a <strong>dual-core Xtensa LX7 processor</strong>, providing enhanced computational performance for real-time processing and complex workloads. <br><br>The module integrates <strong>2.4 GHz Wi-Fi (802.11 b/g/n) and Bluetooth 5 (LE)</strong>, enabling reliable wireless connectivity for a wide range of smart devices and connected systems. <br><br>One of the key advantages of the ESP32-S3-WROOM-2 is its support for <strong>external PSRAM</strong>, which significantly increases available memory for data buffering, image processing, and AI applications. <br><br>The module includes a wide range of peripheral interfaces such as <strong>SPI, I2C, UART, I2S, PWM, ADC, and GPIO</strong>, ensuring flexible integration with various hardware components and system architectures. <br><br>It also features <strong>USB OTG support</strong>, enabling direct USB communication for advanced connectivity solutions. <br><br>Advanced security features including <strong>secure boot, flash encryption, and hardware cryptographic acceleration</strong> provide strong protection for IoT and connected devices. <br><br>Packaged in a compact <strong>SMD module with castellated edges</strong>, the ESP32-S3-WROOM-2 simplifies PCB design and accelerates product development. <br><br>The <strong>ESP32-S3-WROOM-2</strong> is widely used in applications such as <strong>AI edge devices, smart home systems, industrial automation, multimedia applications, IoT devices, and wireless communication systems</strong>, where high performance and extended memory capabilities are required.
ESP32-S3-WROOM-2

Description: The ESP32-S3-WROOM-2 is an advanced Wi-Fi and Bluetooth LE microcontroller module ...
Package: T&R | MOQ: 650 | MPQ: 650

ESP32-S3-WROOM-1U / The ESP32-S3-WROOM-1U is a high-performance <strong>Wi-Fi and Bluetooth LE microcontroller module</strong> developed by <strong>Espressif Systems</strong>, designed for advanced IoT and embedded applications requiring enhanced RF flexibility. It is powered by a <strong>dual-core Xtensa LX7 processor</strong>, delivering strong processing capability for real-time data processing and control. <br><br>The module supports <strong>2.4 GHz Wi-Fi (802.11 b/g/n) and Bluetooth 5 (LE)</strong>, enabling reliable wireless communication across a wide range of applications. Unlike standard variants, this version includes a <strong>U.FL connector for external antenna support</strong>, allowing improved signal strength and extended communication range in challenging environments. <br><br>The ESP32-S3-WROOM-1U includes advanced features such as <strong>vector instructions for AI acceleration</strong>, enabling efficient edge computing and machine learning tasks directly on the device. It also supports <strong>USB OTG interface</strong>, providing direct USB connectivity without additional components. <br><br>The module offers a comprehensive set of interfaces including <strong>SPI, I2C, UART, I2S, PWM, ADC, and GPIO</strong>, ensuring flexible integration with various peripherals and system architectures. <br><br>With support for <strong>low-power operation modes</strong> and advanced security features like <strong>secure boot and flash encryption</strong>, the ESP32-S3-WROOM-1U is suitable for secure and energy-efficient designs. <br><br>Packaged in a compact <strong>SMD module with external antenna interface</strong>, it is ideal for applications requiring optimized RF performance and flexible antenna placement. <br><br>The <strong>ESP32-S3-WROOM-1U</strong> is widely used in applications such as <strong>IoT devices, industrial automation, smart home systems, wireless sensors, AI edge devices, and communication systems</strong>, where high performance and extended wireless range are essential.
ESP32-S3-WROOM-1U

Description: The ESP32-S3-WROOM-1U is a high-performance Wi-Fi and Bluetooth LE microcontroller ...
Package: TRAY | MOQ: 650 | MPQ: 650

ESP32-E22-M2-1-KE / The ESP32-E22-M2-1 is a compact and high-performance <strong>Wi-Fi and Bluetooth LE microcontroller module</strong> developed by <strong>Espressif Systems</strong>, designed for modern IoT and embedded applications requiring reliable wireless connectivity. It is powered by a <strong>dual-core Xtensa LX7 processor</strong>, delivering enhanced processing capabilities for real-time control and data handling. <br><br>The module supports <strong>2.4 GHz Wi-Fi (802.11 b/g/n) and Bluetooth Low Energy (BLE)</strong>, enabling stable and efficient communication for connected devices across various environments. <br><br>The ESP32-E22-M2-1 is optimized for <strong>low-power operation</strong>, making it suitable for battery-powered and energy-efficient applications such as wireless sensors and portable electronics. <br><br>It provides a wide range of peripheral interfaces including <strong>SPI, I2C, UART, PWM, ADC, and GPIO</strong>, ensuring flexible integration with sensors, actuators, and other external components. <br><br>Advanced features such as <strong>secure boot, flash encryption, and hardware cryptographic acceleration</strong> enhance system security and protect sensitive data in IoT deployments. <br><br>Packaged in a compact <strong>SMD module with castellated edges</strong>, the ESP32-E22-M2-1 allows easy PCB mounting and rapid product development in space-constrained designs. <br><br>The <strong>ESP32-E22-M2-1</strong> is widely used in applications such as <strong>IoT devices, smart home systems, industrial automation, wearable electronics, and wireless communication systems</strong>, where performance, security, and connectivity are essential.
ESP32-E22-M2-1-KE

Description: The ESP32-E22-M2-1 is a compact and high-performance Wi-Fi and Bluetooth LE microc ...
Package: TRAY | MOQ: 650 | MPQ: 650

TDA21590AUMA1 / The TDA21590AUMA1 is a highly integrated <strong>smart power stage (DrMOS)</strong> developed by <strong>Infineon Technologies</strong>, designed for high-performance voltage regulation in computing and industrial applications. It combines <strong>high-side and low-side MOSFETs with an optimized gate driver</strong> in a single compact package, simplifying design and improving efficiency. <br><br>This device supports up to <strong>90A continuous current</strong>, making it ideal for demanding applications such as CPU and GPU voltage regulator modules (VRMs), servers, and high-performance computing systems. <br><br>The TDA21590AUMA1 is optimized for <strong>synchronous buck converter topologies</strong>, delivering high efficiency and fast transient response required in modern power delivery networks. <br><br>It features advanced technologies such as <strong>integrated current sensing, temperature monitoring, and fault protection</strong>, ensuring safe and reliable operation under varying load conditions. <br><br>With its <strong>low switching losses and optimized dead-time control</strong>, the device enhances overall system efficiency while reducing heat generation. <br><br>Packaged in a compact <strong>PG-VQFN-40 surface-mount package</strong>, the TDA21590AUMA1 is ideal for high-density PCB layouts and space-constrained designs. <br><br>The <strong>TDA21590AUMA1</strong> is widely used in applications such as <strong>CPU and GPU power delivery, servers, telecom equipment, high-performance computing systems, and advanced industrial power solutions</strong>, where high current capability and efficiency are critical.
TDA21590AUMA1

Description: The TDA21590AUMA1 is a highly integrated smart power stage (DrMOS) develo ...
Package: T&R | MOQ: 2000 | MPQ: 2000

NT5CC64M16DP-DI / The NT5CC64M16DP-DI is a high-performance <strong>1Gbit DDR3 SDRAM</strong> developed by <strong>Nanya Technology</strong>, designed for embedded systems, communication equipment, and high-speed digital applications. It features a memory organization of <strong>64M × 16 bits</strong>, enabling efficient data handling and reliable bandwidth performance. <br><br>This device utilizes a <strong>DDR3 architecture</strong>, allowing data transfers on both rising and falling edges of the clock signal, significantly increasing throughput compared to conventional SDRAM technologies. <br><br>The NT5CC64M16DP-DI supports high-speed operation typically up to <strong>1600 Mbps</strong>, making it suitable for applications requiring fast and stable memory access. <br><br>Operating at a nominal supply voltage of <strong>1.5V</strong>, the device offers a balance between power efficiency and performance, and is compatible with <strong>SSTL_15 signaling</strong> for reliable communication with modern memory controllers. <br><br>Advanced features such as <strong>on-die termination (ODT), auto-refresh, and self-refresh</strong> help maintain signal integrity and ensure stable operation in dynamic environments. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC64M16DP-DI is optimized for high-density PCB layouts and space-constrained designs. <br><br>The <strong>NT5CC64M16DP-DI</strong> is widely used in applications such as <strong>embedded systems, networking devices, industrial controllers, and consumer electronics</strong>, where reliable and cost-effective high-speed volatile memory is required.
NT5CC64M16DP-DI

Description: The NT5CC64M16DP-DI is a high-performance 1Gbit DDR3 SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC512M16JR-DI / The NT5CC512M16JR-DI is a high-performance <strong>8Gbit DDR3L SDRAM</strong> developed by <strong>Nanya Technology</strong>, engineered for low-power, high-speed memory applications in embedded and industrial systems. It features a memory organization of <strong>512M × 16 bits</strong>, delivering high bandwidth and efficient data throughput. <br><br>This device utilizes a <strong>DDR3L architecture</strong>, enabling data transfers on both rising and falling edges of the clock signal, significantly increasing performance compared to traditional SDRAM technologies. <br><br>The NT5CC512M16JR-DI operates at a nominal voltage of <strong>1.35V</strong>, reducing power consumption and thermal output while maintaining compatibility with <strong>1.5V operation</strong> in flexible system designs. <br><br>It supports high-speed operation up to approximately <strong>1600 Mbps</strong>, making it suitable for applications requiring fast and reliable memory access and low latency. <br><br>Advanced features such as <strong>on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture</strong> ensure improved signal integrity and stable operation in high-speed environments. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC512M16JR-DI is optimized for high-density PCB layouts and space-constrained designs. <br><br>The <strong>NT5CC512M16JR-DI</strong> is widely used in applications such as <strong>embedded systems, networking devices, industrial controllers, portable electronics, and consumer products</strong>, where low power consumption and high-capacity volatile memory are critical.
NT5CC512M16JR-DI

Description: The NT5CC512M16JR-DI is a high-performance 8Gbit DDR3L SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC512M16ER-DI / The NT5CC512M16ER-DI is a high-density <strong>8Gbit DDR3L SDRAM</strong> developed by <strong>Nanya Technology</strong>, designed for low-power, high-performance memory applications in embedded systems and advanced digital platforms. It features a memory organization of <strong>512M × 16 bits</strong>, enabling efficient data throughput and high bandwidth performance. <br><br>This device utilizes a <strong>DDR3L architecture</strong>, allowing data transfers on both rising and falling edges of the clock signal, significantly increasing performance compared to conventional SDRAM technologies. <br><br>The NT5CC512M16ER-DI operates at a reduced supply voltage of approximately <strong>1.35V</strong>, minimizing power consumption and heat generation while also supporting <strong>1.5V compatibility</strong> for flexible system integration. <br><br>It supports high-speed operation up to approximately <strong>1600 Mbps</strong>, making it suitable for performance-critical applications requiring fast and reliable memory access. <br><br>Advanced features such as <strong>on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture</strong> enhance signal integrity and ensure stable operation in high-speed environments. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC512M16ER-DI is optimized for high-density PCB layouts and modern electronic designs. <br><br>The <strong>NT5CC512M16ER-DI</strong> is widely used in applications such as <strong>embedded computing, networking equipment, industrial automation, portable devices, and consumer electronics</strong>, where low power consumption and high-capacity volatile memory are essential.
NT5CC512M16ER-DI

Description: The NT5CC512M16ER-DI is a high-density 8Gbit DDR3L SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC512M16DP-DI / The NT5CC512M16DP-DI is a high-density <strong>8Gbit DDR3 SDRAM</strong> developed by <strong>Nanya Technology</strong>, engineered for high-performance computing, embedded systems, and data-intensive applications. It features a memory organization of <strong>512M × 16 bits</strong>, delivering high bandwidth and efficient data throughput for demanding applications. <br><br>This device utilizes a <strong>DDR3 architecture</strong>, enabling data transfers on both rising and falling edges of the clock signal, significantly increasing performance compared to conventional SDRAM technologies. <br><br>The NT5CC512M16DP-DI supports high-speed operation typically up to <strong>1600 Mbps</strong>, making it suitable for applications requiring fast and reliable memory access with low latency. <br><br>Operating at a nominal supply voltage of <strong>1.5V</strong>, the device provides a balance between power efficiency and performance, and is compatible with <strong>SSTL_15 signaling</strong> for stable communication with modern memory controllers. <br><br>Advanced features such as <strong>on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture</strong> enhance signal integrity and ensure reliable operation in high-speed systems. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC512M16DP-DI is ideal for high-density PCB layouts and space-constrained designs. <br><br>The <strong>NT5CC512M16DP-DI</strong> is widely used in applications such as <strong>embedded computing, networking equipment, industrial automation, consumer electronics, and high-performance digital systems</strong>, where high-capacity and reliable volatile memory is essential.
NT5CC512M16DP-DI

Description: The NT5CC512M16DP-DI is a high-density 8Gbit DDR3 SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC256M16JR-DI / The NT5CC256M16JR-DI is a high-performance <strong>4Gbit DDR3L SDRAM</strong> developed by <strong>Nanya Technology</strong>, designed for low-power, high-speed memory applications in embedded and industrial systems. It features a memory organization of <strong>256M × 16 bits</strong>, enabling efficient data throughput and high bandwidth performance. <br><br>This device utilizes a <strong>DDR3L architecture</strong>, supporting data transfers on both rising and falling edges of the clock signal, significantly increasing performance compared to conventional SDRAM solutions. <br><br>The NT5CC256M16JR-DI operates at a nominal voltage of <strong>1.35V</strong>, reducing power consumption and thermal output while maintaining compatibility with <strong>1.5V operation</strong> in flexible system designs. <br><br>It supports high-speed operation up to approximately <strong>1600 Mbps</strong>, making it suitable for applications requiring fast and reliable memory access and low latency. <br><br>Advanced features include <strong>on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture</strong>, ensuring improved signal integrity and stable operation in high-speed environments. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC256M16JR-DI is optimized for high-density PCB layouts and space-constrained designs. <br><br>The <strong>NT5CC256M16JR-DI</strong> is widely used in applications such as <strong>embedded systems, networking equipment, industrial controllers, portable electronics, and consumer devices</strong>, where low power consumption and high-capacity volatile memory are critical.
NT5CC256M16JR-DI

Description: The NT5CC256M16JR-DI is a high-performance 4Gbit DDR3L SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC256M16ER-DI / The NT5CC256M16ER-DI is a high-density <strong>4Gbit DDR3L SDRAM</strong> developed by <strong>Nanya Technology</strong>, engineered for low-power, high-speed memory applications in embedded systems and advanced digital platforms. It features a memory organization of <strong>256M × 16 bits</strong>, enabling efficient data processing and high bandwidth performance. <br><br>This device utilizes a <strong>DDR3L architecture</strong>, allowing data transfers on both rising and falling edges of the clock signal, significantly increasing throughput compared to conventional SDRAM technologies. <br><br>The NT5CC256M16ER-DI operates at a reduced supply voltage of approximately <strong>1.35V</strong>, minimizing power consumption and heat generation while also supporting <strong>1.5V compatibility</strong> for flexible system integration. <br><br>It supports high-speed operation up to approximately <strong>1600 Mbps</strong>, making it suitable for performance-critical applications requiring fast and reliable memory access. <br><br>Advanced features include <strong>on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture</strong>, ensuring improved signal integrity and stable operation in high-speed environments. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC256M16ER-DI is optimized for high-density PCB layouts and modern electronic designs. <br><br>The <strong>NT5CC256M16ER-DI</strong> is widely used in applications such as <strong>embedded computing, networking equipment, industrial automation, portable devices, and consumer electronics</strong>, where low power consumption and high-capacity volatile memory are essential.
NT5CC256M16ER-DI

Description: The NT5CC256M16ER-DI is a high-density 4Gbit DDR3L SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC256M16DP-DI / The NT5CC256M16DP-DI is a high-density <strong>4Gbit DDR3 SDRAM</strong> developed by <strong>Nanya Technology</strong>, designed for high-performance computing, embedded systems, and data-intensive applications. It features a memory organization of <strong>256M × 16 bits</strong>, delivering high bandwidth and efficient data throughput. <br><br>This device utilizes <strong>DDR3 architecture</strong>, enabling data transfers on both rising and falling edges of the clock signal to significantly increase performance compared to traditional SDRAM technologies. <br><br>The NT5CC256M16DP-DI supports high-speed operation typically up to <strong>1600 Mbps</strong>, making it suitable for applications requiring fast and reliable memory access and low latency performance. <br><br>Operating at a nominal supply voltage of <strong>1.5V</strong>, the device provides a balance between performance and power efficiency, and is compatible with <strong>SSTL_15 signaling</strong> for stable communication with modern memory controllers. <br><br>Advanced features such as <strong>on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture</strong> enhance signal integrity and ensure reliable operation in high-speed systems. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC256M16DP-DI is ideal for high-density PCB layouts and space-constrained electronic designs. <br><br>The <strong>NT5CC256M16DP-DI</strong> is widely used in applications such as <strong>embedded computing, networking equipment, industrial automation, consumer electronics, and high-performance digital systems</strong>, where high-capacity and reliable volatile memory is required.
NT5CC256M16DP-DI

Description: The NT5CC256M16DP-DI is a high-density 4Gbit DDR3 SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC128M16JR-DI / The NT5CC128M16JR-DI is a high-performance <strong>2Gbit DDR3L SDRAM</strong> developed by <strong>Nanya Technology</strong>, designed for low-power, high-speed memory applications in embedded and industrial systems. It features a memory organization of <strong>128M × 16 bits</strong>, enabling efficient data processing and high bandwidth performance. <br><br>This device utilizes a <strong>DDR3L architecture</strong>, supporting data transfers on both rising and falling edges of the clock signal, significantly increasing throughput compared to conventional SDRAM technologies. <br><br>The NT5CC128M16JR-DI operates at a nominal voltage of <strong>1.35V</strong>, reducing power consumption and thermal output, while also maintaining compatibility with <strong>1.5V operation</strong> in flexible system designs. <br><br>It supports high-speed operation typically up to <strong>1600 Mbps</strong>, making it suitable for applications requiring fast and reliable memory access. <br><br>Advanced features include <strong>on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture</strong>, ensuring improved signal integrity and stable operation in high-speed environments. <br><br>The device is housed in a compact <strong>96-ball FBGA surface-mount package</strong>, optimized for high-density PCB layouts and space-constrained designs. <br><br>The <strong>NT5CC128M16JR-DI</strong> is widely used in applications such as <strong>embedded systems, networking devices, industrial controllers, portable electronics, and consumer products</strong>, where low power consumption and high-speed volatile memory are essential.
NT5CC128M16JR-DI

Description: The NT5CC128M16JR-DI is a high-performance 2Gbit DDR3L SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC128M16ER-DI / The NT5CC128M16ER-DI is a high-efficiency <strong>2Gbit DDR3L SDRAM</strong> developed by <strong>Nanya Technology</strong>, designed for low-power, high-speed memory applications in embedded systems and advanced digital platforms. It features a memory organization of <strong>128M × 16 bits</strong>, delivering reliable data throughput and high bandwidth performance. <br><br>This device utilizes a <strong>double data rate (DDR3L) architecture</strong>, allowing data transfers on both rising and falling edges of the clock signal, significantly increasing performance compared to conventional SDRAM solutions. <br><br>The NT5CC128M16ER-DI operates at a reduced supply voltage of approximately <strong>1.35V</strong>, offering improved power efficiency and reduced heat generation, making it ideal for energy-sensitive applications. It is also backward compatible with <strong>1.5V operation</strong> in many system designs. <br><br>Supporting high-speed operation up to approximately <strong>1600 Mbps</strong>, the device is suitable for performance-demanding applications requiring fast and stable memory access. <br><br>It incorporates advanced features such as <strong>on-die termination (ODT), auto-refresh, self-refresh, and fly-by topology</strong>, enhancing signal integrity and ensuring reliable system performance. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC128M16ER-DI is optimized for high-density PCB layouts and modern electronic designs. <br><br>The <strong>NT5CC128M16ER-DI</strong> is widely used in applications such as <strong>embedded computing, networking equipment, industrial automation, portable devices, and consumer electronics</strong>, where low power consumption and high-speed volatile memory are critical requirements.
NT5CC128M16ER-DI

Description: The NT5CC128M16ER-DI is a high-efficiency 2Gbit DDR3L SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC128M16DP-DI / The NT5CC128M16DP-DI is a high-performance <strong>2Gbit DDR3 SDRAM</strong> developed by <strong>Nanya Technology</strong>, designed for high-speed computing, embedded systems, and data-intensive applications. It features a memory organization of <strong>128M × 16 bits</strong>, providing efficient data handling and high bandwidth performance. <br><br>This device operates with a <strong>double data rate (DDR3) architecture</strong>, enabling data transfers on both the rising and falling edges of the clock signal, significantly increasing throughput compared to standard SDRAM. <br><br>The NT5CC128M16DP-DI supports high-speed operation with clock frequencies typically up to <strong>1600 Mbps (DDR3-1600 class)</strong>, making it suitable for demanding applications requiring fast memory access and low latency. <br><br>It operates at a nominal supply voltage of <strong>1.5V</strong>, offering improved power efficiency compared to earlier generation memory technologies. The device is compatible with <strong>SSTL_15 signaling</strong>, ensuring stable communication with modern memory controllers and processors. <br><br>Advanced features include <strong>auto-refresh, self-refresh, on-die termination (ODT), and fly-by command/address architecture</strong>, which enhance signal integrity and overall system reliability. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount package</strong>, the NT5CC128M16DP-DI is ideal for high-density PCB layouts and space-constrained designs. <br><br>The <strong>NT5CC128M16DP-DI</strong> is widely used in applications such as <strong>embedded computing, networking equipment, industrial systems, consumer electronics, and high-performance digital platforms</strong>, where reliable and high-speed volatile memory is essential.
NT5CC128M16DP-DI

Description: The NT5CC128M16DP-DI is a high-performance 2Gbit DDR3 SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT48LC8M16A2P-75 / The MT48LC8M16A2P-75 is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, communication devices, and high-speed digital applications. It features a memory organization of <strong>4 banks × 8M × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth operation. <br><br>The device operates using a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the system clock, ensuring precise timing and reliable performance in high-speed systems. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for performance-critical memory applications. <br><br>The MT48LC8M16A2P-75 includes a <strong>4-bank architecture with pipelined data access</strong>, allowing concurrent operations and improved throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency (2 or 3 cycles)</strong>, offering flexibility for various controller designs. <br><br>Operating at a supply voltage of approximately <strong>3.3V</strong>, the device is compatible with standard <strong>LVTTL interface levels</strong>, ensuring seamless integration with microcontrollers, DSPs, and FPGA-based systems. <br><br>Additional features include <strong>auto-refresh, self-refresh, and data masking (DQM)</strong>, which help maintain data integrity and optimize memory performance in dynamic environments. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC8M16A2P-75 is ideal for space-constrained PCB designs while delivering reliable electrical characteristics. <br><br>The <strong>MT48LC8M16A2P-75</strong> is widely used in applications such as <strong>embedded systems, networking equipment, industrial controllers, consumer electronics, and display systems</strong>, where cost-effective and high-speed volatile memory is required.
MT48LC8M16A2P-75

Description: The MT48LC8M16A2P-75 is a high-performance 128Mbit synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT48LC64M16A2TG-75 / The MT48LC64M16A2TG-75 is a high-performance <strong>1Gbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and networking applications requiring reliable memory performance. It features a memory organization of <strong>4 banks × 16M × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth operation. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring stable timing and predictable system behavior. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed digital applications. <br><br>Built with an advanced <strong>4-bank internal architecture and pipelined data access</strong>, the MT48LC64M16A2TG-75 allows concurrent operations and improved memory throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various memory controller designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, ensuring seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh and self-refresh features</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC64M16A2TG-75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>MT48LC64M16A2TG-75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, telecommunications devices, and consumer electronics</strong>, where stable and cost-effective high-speed volatile memory is required.
MT48LC64M16A2TG-75

Description: The MT48LC64M16A2TG-75 is a high-performance 1Gbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT48LC64M16A2P-75 / The MT48LC64M16A2P-75 is a high-performance <strong>1Gbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and networking applications. It features a memory organization of <strong>4 banks × 16M × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth performance. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring stable timing and predictable operation. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed applications. <br><br>Built with an advanced <strong>4-bank internal architecture and pipelined data access</strong>, the MT48LC64M16A2P-75 allows concurrent memory operations and improved system throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various memory controller designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh and self-refresh features</strong> to maintain data integrity and reliable operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC64M16A2P-75 is optimized for space-constrained PCB designs while maintaining stable electrical performance. <br><br>The <strong>MT48LC64M16A2P-75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, telecommunications devices, and consumer electronics</strong>, where reliable and cost-effective high-speed volatile memory is required.
MT48LC64M16A2P-75

Description: The MT48LC64M16A2P-75 is a high-performance 1Gbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT48LC4M16A2P-75 / The MT48LC4M16A2P-75 is a reliable <strong>64Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication devices. It features a memory organization of <strong>4 banks × 1M × 16 bits</strong>, enabling efficient parallel data processing and optimized memory bandwidth. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring stable timing and predictable system performance. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for a wide range of digital applications. <br><br>Built with an advanced <strong>4-bank internal architecture and pipelined operation</strong>, the MT48LC4M16A2P-75 allows concurrent memory access and improved system throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various system designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh and self-refresh features</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC4M16A2P-75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>MT48LC4M16A2P-75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where stable and cost-effective high-speed volatile memory is required.
MT48LC4M16A2P-75

Description: The MT48LC4M16A2P-75 is a reliable 64Mbit CMOS synchronous DRAM (SDRAM) d ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT48LC32M16A2TG-75 / The MT48LC32M16A2TG-75 is a high-performance <strong>512Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications. It features a memory organization of <strong>4 banks × 8M × 16 bits</strong>, enabling efficient parallel data transfer and high bandwidth performance. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring stable timing and predictable operation. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed applications. <br><br>Built with an advanced <strong>quad-bank internal architecture and pipelined data access</strong>, the MT48LC32M16A2TG-75 allows concurrent memory operations and improved system throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various memory controller designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh, self-refresh, and auto-precharge features</strong> to maintain data integrity and optimize performance. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC32M16A2TG-75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>MT48LC32M16A2TG-75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, telecommunications devices, and consumer electronics</strong>, where stable and cost-effective high-speed volatile memory is required.
MT48LC32M16A2TG-75

Description: The MT48LC32M16A2TG-75 is a high-performance 512Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT48LC32M16A2P-75 / The MT48LC32M16A2P-75 is a high-performance <strong>512Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications. It features a memory organization of <strong>4 banks × 8M × 16 bits</strong>, enabling efficient parallel data transfer and high bandwidth performance. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable operation. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed applications. <br><br>Built with an advanced <strong>4-bank internal architecture and pipelined data access</strong>, the MT48LC32M16A2P-75 allows concurrent memory operations and improved system throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various memory controller designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh and self-refresh features</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC32M16A2P-75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>MT48LC32M16A2P-75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, telecommunications devices, and consumer electronics</strong>, where stable and cost-effective high-speed volatile memory is required.
MT48LC32M16A2P-75

Description: The MT48LC32M16A2P-75 is a high-performance 512Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT48LC16M8A2P-75 / The MT48LC16M8A2P-75 is a high-performance <strong>128Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication devices. It features a memory organization of <strong>4 banks × 4M × 8 bits</strong>, enabling efficient parallel data processing and optimized memory bandwidth. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed digital applications. <br><br>Built with an advanced <strong>4-bank internal architecture and pipelined operation</strong>, the MT48LC16M8A2P-75 allows efficient burst data transfers and improved system throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency (2 or 3 cycles)</strong>, providing flexibility for various memory controller designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh and self-refresh features</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M8A2P-75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>MT48LC16M8A2P-75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where stable and cost-effective high-speed volatile memory is required.
MT48LC16M8A2P-75

Description: The MT48LC16M8A2P-75 is a high-performance 128Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT48LC2M32B2P-75 / The MT48LC2M32B2P-75 is a high-performance <strong>64Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication devices. It features a memory organization of <strong>4 banks × 512K × 32 bits</strong>, enabling efficient parallel data transfer and optimized memory bandwidth. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all signals are registered on the rising edge of the system clock, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for a wide range of digital applications. <br><br>Built with an advanced <strong>quad-bank architecture and pipelined operation</strong>, the MT48LC2M32B2P-75 allows concurrent memory access and improves overall system throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency (1, 2, or 3 cycles)</strong>, providing flexibility for system designers. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, ensuring seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh and self-refresh capabilities</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>86-pin TSOP-II surface-mount form factor</strong>, the MT48LC2M32B2P-75 is optimized for high-density PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>MT48LC2M32B2P-75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, telecommunications devices, and consumer electronics</strong>, where stable and cost-effective high-speed volatile memory is required.
MT48LC2M32B2P-75

Description: The MT48LC2M32B2P-75 is a high-performance 64Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2TG-75 / The MT48LC16M16A2TG-75 is a high-performance <strong>256Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and networking applications. It features a memory organization of <strong>4 banks × 4M × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth operation. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed memory applications. <br><br>Built with an advanced <strong>4-bank internal architecture and pipelined operation</strong>, the MT48LC16M16A2TG-75 allows efficient burst data transfers and improved system throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various system designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh, self-refresh, and auto precharge features</strong> to maintain data integrity and optimize performance. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2TG-75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>MT48LC16M16A2TG-75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where stable and cost-effective high-speed volatile memory is required.
MT48LC16M16A2TG-75

Description: The MT48LC16M16A2TG-75 is a high-performance 256Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-75 / The MT48LC16M16A2P-75 is a high-performance <strong>256Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and networking applications. It features a memory organization of <strong>4 banks × 4M × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth operation. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed memory applications. <br><br>Built with an advanced <strong>4-bank internal architecture and burst-oriented data access</strong>, the MT48LC16M16A2P-75 allows efficient sequential data transfers and improved system throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various memory controller designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh and self-refresh features</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>MT48LC16M16A2P-75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where stable and cost-effective high-speed volatile memory is required.
MT48LC16M16A2P-75

Description: The MT48LC16M16A2P-75 is a high-performance 256Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT47H64M16HR-25E / The MT47H64M16HR-25E is a high-performance <strong>1Gbit DDR2 synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and networking applications requiring reliable and efficient memory solutions. It features a memory organization of <strong>64M × 16 bits</strong>, enabling optimized parallel data processing and efficient bandwidth utilization. <br><br>The device utilizes a <strong>double data rate (DDR2) architecture with 4n prefetch</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly increase throughput compared to conventional SDRAM. It supports clock frequencies up to approximately <strong>400 MHz (800 MT/s data rate)</strong>, ensuring stable performance in high-speed digital systems. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT47H64M16HR-25E enables concurrent memory operations and improved system efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, offering flexibility for modern memory controller designs. <br><br>The device operates within a supply voltage range of <strong>1.7V to 1.9V (typ. 1.8V)</strong>, ensuring a balance between performance and power efficiency, and is fully compliant with standard <strong>DDR2 memory interfaces</strong>. <br><br>Packaged in a compact <strong>84-ball FBGA surface-mount form factor</strong>, the MT47H64M16HR-25E is optimized for high-density PCB layouts and reliable signal integrity in high-speed applications. <br><br>The <strong>MT47H64M16HR-25E</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking equipment, telecommunications systems, and consumer electronics</strong>, where stable, high-speed, and cost-effective volatile memory is required.
MT47H64M16HR-25E

Description: The MT47H64M16HR-25E is a high-performance 1Gbit DDR2 synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT47H512M8HQ-25E / The MT47H512M8HQ-25E is a high-performance <strong>4Gbit DDR2 synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, networking equipment, and industrial applications requiring reliable high-speed memory. It features a memory organization of <strong>512M × 8 bits</strong>, enabling efficient parallel data processing and optimized bandwidth performance. <br><br>The device utilizes a <strong>double data rate (DDR2) architecture with 4n prefetch</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly increase throughput compared to standard SDRAM. It supports clock frequencies up to approximately <strong>400 MHz (800 MT/s data rate)</strong>, making it suitable for mid- to high-speed digital systems. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT47H512M8HQ-25E enables concurrent memory operations and improved system efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, offering flexibility for modern memory controller designs. <br><br>The device operates within a supply voltage range of <strong>1.7V to 1.9V (typ. 1.8V)</strong>, ensuring a balance between performance and power efficiency, and is fully compliant with standard <strong>DDR2 memory interfaces</strong>. <br><br>Packaged in a compact <strong>60-ball FBGA surface-mount form factor</strong>, the MT47H512M8HQ-25E is optimized for high-density PCB layouts and reliable signal integrity in high-speed applications. <br><br>The <strong>MT47H512M8HQ-25E</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking equipment, telecommunications systems, and consumer electronics</strong>, where stable, high-speed, and cost-effective volatile memory is required.
MT47H512M8HQ-25E

Description: The MT47H512M8HQ-25E is a high-performance 4Gbit DDR2 synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT47H512M16RT-25E / The MT47H512M16RT-25E is a high-density <strong>8Gbit DDR2 synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, networking equipment, and industrial applications requiring reliable high-capacity memory solutions. It features a memory organization of <strong>512M × 16 bits</strong>, enabling efficient parallel data processing and large-scale data storage. <br><br>The device utilizes a <strong>double data rate (DDR2) architecture with 4n prefetch</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly increase bandwidth. It supports clock frequencies up to approximately <strong>400 MHz (800 MT/s data rate)</strong>, ensuring stable and efficient performance in high-speed applications. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT47H512M16RT-25E enables concurrent memory operations and improved system throughput. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a supply voltage range of <strong>1.7V to 1.9V (typ. 1.8V)</strong>, offering a balance between performance and power efficiency, and is fully compliant with standard <strong>DDR2 memory interfaces</strong>. <br><br>Packaged in a compact <strong>84-ball FBGA surface-mount form factor</strong>, the MT47H512M16RT-25E is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT47H512M16RT-25E</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking equipment, telecommunications infrastructure, and high-performance consumer electronics</strong>, where stable, high-speed, and high-capacity volatile memory is required.
MT47H512M16RT-25E

Description: The MT47H512M16RT-25E is a high-density 8Gbit DDR2 synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT47H512M16JT-25E / The MT47H512M16JT-25E is a high-density <strong>8Gbit DDR2 synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, networking equipment, and industrial applications requiring reliable high-capacity memory. It features a memory organization of <strong>512M × 16 bits</strong>, enabling efficient parallel data processing and large data storage capacity. <br><br>The device utilizes a <strong>double data rate (DDR2) architecture with 4n prefetch</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly increase bandwidth. It supports clock frequencies up to approximately <strong>400 MHz (800 MT/s data rate)</strong>, ensuring stable performance in high-speed applications. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT47H512M16JT-25E enables concurrent memory operations and improved system throughput. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a supply voltage range of <strong>1.7V to 1.9V (typ. 1.8V)</strong>, ensuring a balance between performance and power efficiency, and is fully compliant with standard <strong>DDR2 memory interfaces</strong>. <br><br>Packaged in a compact <strong>84-ball FBGA surface-mount form factor</strong>, the MT47H512M16JT-25E is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT47H512M16JT-25E</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking equipment, telecommunications infrastructure, and high-performance consumer electronics</strong>, where stable and cost-effective high-capacity volatile memory is required.
MT47H512M16JT-25E

Description: The MT47H512M16JT-25E is a high-density 8Gbit DDR2 synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT47H256M8HQ-25E / The MT47H256M8HQ-25E is a high-performance <strong>2Gbit DDR2 synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial applications, and networking equipment requiring reliable high-speed memory. It features a memory organization of <strong>256M × 8 bits</strong>, enabling efficient parallel data processing and optimized bandwidth. <br><br>The device utilizes a <strong>double data rate (DDR2) architecture with 4n prefetch</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly increase throughput. It supports clock frequencies up to approximately <strong>400 MHz (800 MT/s data rate)</strong>, making it suitable for mid- to high-speed digital systems. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT47H256M8HQ-25E enables concurrent memory operations and improved system efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, offering flexibility for modern memory controller designs. <br><br>The device operates within a supply voltage range of <strong>1.7V to 1.9V (typ. 1.8V)</strong>, ensuring a balance between performance and power consumption, and is fully compliant with standard <strong>DDR2 memory interfaces</strong>. <br><br>Packaged in a compact <strong>60-ball FBGA surface-mount form factor</strong>, the MT47H256M8HQ-25E is optimized for high-density PCB layouts and reliable signal integrity in high-speed applications. <br><br>The <strong>MT47H256M8HQ-25E</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking equipment, telecommunications systems, and consumer electronics</strong>, where stable and cost-effective high-speed volatile memory is required.
MT47H256M8HQ-25E

Description: The MT47H256M8HQ-25E is a high-performance 2Gbit DDR2 synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT47H256M16RT-25E / The MT47H256M16RT-25E is a high-performance <strong>4Gbit DDR2 synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial applications, and networking equipment requiring reliable high-speed memory solutions. It features a memory organization of <strong>256M × 16 bits</strong>, enabling efficient parallel data processing and high-density storage. <br><br>The device utilizes a <strong>double data rate (DDR2) architecture with 4n prefetch</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly increase bandwidth and overall system performance. It supports clock frequencies up to approximately <strong>400 MHz (800 MT/s data rate)</strong>, making it suitable for demanding digital applications. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT47H256M16RT-25E enables concurrent memory operations and improved throughput. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, offering flexibility for modern memory controller designs. <br><br>The device operates within a supply voltage range of <strong>1.7V to 1.9V (typ. 1.8V)</strong>, ensuring a balance between performance and power efficiency, and is fully compliant with standard <strong>DDR2 memory interfaces</strong>. <br><br>Packaged in a compact <strong>84-ball FBGA surface-mount form factor</strong>, the MT47H256M16RT-25E is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT47H256M16RT-25E</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking equipment, telecommunications systems, and consumer electronics</strong>, where stable and cost-effective high-speed volatile memory is required.
MT47H256M16RT-25E

Description: The MT47H256M16RT-25E is a high-performance 4Gbit DDR2 synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT47H256M16JT-25E / The MT47H256M16JT-25E is a high-performance <strong>4Gbit DDR2 synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, networking equipment, and industrial applications requiring reliable high-speed memory. It features a memory organization of <strong>256M × 16 bits</strong>, enabling efficient parallel data processing and high-density storage. <br><br>The device utilizes a <strong>double data rate (DDR2) architecture with 4n prefetch</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly increase bandwidth compared to standard SDRAM. It supports clock frequencies up to approximately <strong>400 MHz (800 MT/s data rate)</strong>, ensuring stable performance in demanding applications. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT47H256M16JT-25E enables concurrent memory operations and improved system throughput. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a supply voltage range of <strong>1.7V to 1.9V (typ. 1.8V)</strong>, ensuring a balance between performance and power efficiency, and is fully compliant with standard <strong>DDR2 memory interfaces</strong>. <br><br>Packaged in a compact <strong>84-ball FBGA surface-mount form factor</strong>, the MT47H256M16JT-25E is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT47H256M16JT-25E</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, telecommunications equipment, and consumer electronics</strong>, where stable and cost-effective high-speed volatile memory is required.
MT47H256M16JT-25E

Description: The MT47H256M16JT-25E is a high-performance 4Gbit DDR2 synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT47H128M8HQ-25E / The MT47H128M8HQ-25E is a reliable <strong>1Gbit DDR2 synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial applications, and networking equipment requiring stable and cost-effective memory solutions. It features a memory organization of <strong>128M × 8 bits</strong>, enabling efficient parallel data handling and optimized bandwidth. <br><br>The device utilizes a <strong>double data rate (DDR2) architecture with 4n prefetch</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly improve throughput compared to standard SDRAM. It supports clock frequencies up to approximately <strong>400 MHz (800 MT/s data rate)</strong>, making it suitable for mid- to high-speed digital systems. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT47H128M8HQ-25E enables concurrent memory operations and improved system performance. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, offering flexibility for modern memory controller designs. <br><br>The device operates within a supply voltage range of <strong>1.7V to 1.9V (typ. 1.8V)</strong>, ensuring a balance between performance and power efficiency, and is fully compliant with standard <strong>DDR2 memory interfaces</strong>. <br><br>Packaged in a compact <strong>60-ball FBGA surface-mount form factor</strong>, the MT47H128M8HQ-25E is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT47H128M8HQ-25E</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking devices, telecommunications equipment, and consumer electronics</strong>, where stable, high-speed, and cost-effective volatile memory is required.
MT47H128M8HQ-25E

Description: The MT47H128M8HQ-25E is a reliable 1Gbit DDR2 synchronous DRAM (SDRAM) de ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT47H128M16RT-25E / The MT47H128M16RT-25E is a high-performance <strong>2Gbit DDR2 synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and networking applications requiring reliable high-speed memory. It features a memory organization of <strong>128M × 16 bits</strong>, enabling efficient parallel data processing and high-density storage. <br><br>The device utilizes a <strong>double data rate (DDR2) architecture with 4n prefetch</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly increase bandwidth. It supports clock frequencies up to approximately <strong>400 MHz (800 MT/s data rate)</strong>, ensuring stable performance in high-speed applications. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT47H128M16RT-25E enables concurrent memory operations and improved system throughput. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates at a supply voltage range of <strong>1.7V to 1.9V (typ. 1.8V)</strong>, balancing performance and power efficiency, and is fully compliant with standard <strong>DDR2 memory interfaces</strong>. <br><br>Packaged in a compact <strong>84-ball FBGA surface-mount form factor</strong>, the MT47H128M16RT-25E is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT47H128M16RT-25E</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking equipment, telecommunications systems, and consumer electronics</strong>, where stable and cost-effective high-speed volatile memory is required.
MT47H128M16RT-25E

Description: The MT47H128M16RT-25E is a high-performance 2Gbit DDR2 synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT47H128M16JT-25E / The MT47H128M16JT-25E is a high-performance <strong>2Gbit DDR2 synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, networking equipment, and industrial applications requiring reliable high-speed memory. It features a memory organization of <strong>128M × 16 bits</strong>, enabling efficient parallel data processing and high-density storage. <br><br>The device utilizes a <strong>double data rate (DDR2) architecture</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly increase bandwidth. It supports clock frequencies up to approximately <strong>400 MHz (800 MT/s data rate)</strong>, ensuring stable performance in mid- to high-speed systems. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT47H128M16JT-25E enables concurrent operations and improved memory throughput. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates at a typical supply voltage of <strong>1.8V</strong>, ensuring a balance between performance and power consumption, and is fully compliant with standard <strong>DDR2 memory interfaces</strong>. <br><br>Packaged in a compact <strong>84-ball FBGA surface-mount form factor</strong>, the MT47H128M16JT-25E is optimized for high-density PCB layouts and reliable signal integrity in high-speed applications. <br><br>The <strong>MT47H128M16JT-25E</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, telecommunications equipment, and consumer electronics</strong>, where stable and cost-effective high-speed volatile memory is required.
MT47H128M16JT-25E

Description: The MT47H128M16JT-25E is a high-performance 2Gbit DDR2 synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000













info@signalhk.com

+852 2417 2366

Room 1304, 13/F, Allways Centre, 468 Jaffe Road, Causeway Bay, Hong Kong.


SIGNAL-HK WIKI BLOG

Copyright © 2008-2024 Signal HK Limited. All Rights Reserved.Designated trademarks and brands are the property of their respective owners.
Use of this Website constitutes acceptance of Signal HK Limited Terms of Use and Privacy Policy

Cookie Policy | MSN EQV Parts |