Products Transistor SI2304BDS-T1-GE3


SI2304BDS-T1-GE3


SI2304BDS-T1-GE3, Transistor, from Vishay in Stock Hong Kong The SI2304BDS-T1-GE3 is a high-efficiency <strong>N-channel TrenchFET® power MOSFET</strong> from <strong>Vishay Siliconix</strong>, designed to deli

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Part Number SI2304BDS-T1-GE3
Manufacturer Vishay Official Vector Logo Vishay
Description The SI2304BDS-T1-GE3 is a high-efficiency N-channel TrenchFET® power MOSFET from Vishay Siliconix, designed to deliver low conduction losses and reliable switching performance in compact power management applications. Its advanced trench MOSFET technology provides excellent efficiency while maintaining a small footprint for space-constrained electronic designs.

This device features a maximum drain-source voltage of 40V and supports continuous drain currents of up to 2.8A, making it suitable for a broad range of low- and medium-power switching applications. The optimized silicon structure enables efficient operation in battery-powered and portable electronic systems.

The SI2304BDS-T1-GE3 offers a low RDS(ON) characteristic, reducing conduction losses and minimizing heat generation during operation. Its logic-level gate drive capability allows efficient switching performance when driven directly by microcontrollers, digital logic circuits, and low-voltage control systems.

Engineered for fast switching operation, the device features low gate charge and low input capacitance, helping improve efficiency in high-frequency switching circuits. These characteristics make it particularly suitable for DC-DC converters, load switching circuits, and power distribution applications.

The MOSFET is designed to operate across a wide temperature range and provides dependable performance under demanding electrical conditions. Its rugged construction and avalanche capability contribute to long-term reliability in industrial and consumer electronic equipment.

Packaged in a compact SOT-23 surface-mount package, the SI2304BDS-T1-GE3 enables high-density PCB layouts while simplifying automated assembly processes. The small package size makes it ideal for portable and space-sensitive applications.

Combining low power dissipation, fast switching speed, and logic-level gate operation, this MOSFET provides an efficient solution for modern power management designs requiring compact size and reliable performance.

The SI2304BDS-T1-GE3 is widely used in DC-DC converters, battery-powered devices, load switch circuits, portable electronics, industrial controllers, power management modules, embedded systems, consumer electronics, communication equipment, LED drivers, and general-purpose power switching applications.
Product Group Transistor
MOQ 3000 pcs
SPQ 3000 pcs
Figure/Case SOT-23-3
Package T&R Pack
PDF PDF Datasheet
Ship From Hong Kong
Shipment Way DHL / Fedex / TNT / UPS / Others
Delivery Term Ex-Works
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