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W25Q80DLSNIG / ​The W25Q80DLSNIG is an 8-megabit (Mb) NOR flash memory device from Winbond Electronics, designed for high-speed and reliable data storage in various applications. It operates over a supply voltage range of 2.3 V to 3.6 V, making it suitable for systems with varying power requirements. The device features a memory organization of 1 megabit x 8 bits and supports a high-speed SPI interface with Quad I/O capability, enabling data transfer rates up to 80 MHz. It offers fast access times, with a maximum of 6 ns, ensuring quick data retrieval. The W25Q80DLSNIG is housed in an 8-pin SOIC package (0.154
W25Q80DLSNIG

Description: ​The W25Q80DLSNIG is an 8-megabit (Mb) NOR flash memory device from Winbond Electronics, ...
Package: TUBE | MOQ: 1000 | MPQ: 100

AT45DB321E-SHF-T / ​The AT45DB321E-SHF-T is a 32-megabit (Mb) serial flash memory device from Renesas Electronics, designed for efficient data storage in various applications. It operates with a single supply voltage ranging from 2.3 V to 3.6 V, making it suitable for low-power systems. The device supports the Serial Peripheral Interface (SPI) and is compatible with SPI modes 0 and 3, allowing for flexible communication with microcontrollers and other peripherals. It offers a maximum clock frequency of 85 MHz, enabling high-speed data transfer. The memory is organized into 8,192 pages of either 512 or 528 bytes each, with user-configurable page size options. Additionally, it features two independent SRAM data buffers of the same size, facilitating efficient data management. The AT45DB321E-SHF-T provides various programming and erase options, including byte/page programming, page erase, block erase (4 KB), sector erase (64 KB), and chip erase (32 Mb). It also includes advanced hardware and software data protection features, such as individual sector protection and a 128-byte One-Time Programmable (OTP) security register. The device exhibits low power consumption, with typical active read current at 7 mA, standby current at 25 µA, deep power-down current at 3 µA, and ultra-deep power-down current at 400 nA. It is housed in an 8-lead SOIC package and operates over a temperature range of -40°C to 85°C, ensuring reliability in various environmental conditions. ​
AT45DB321E-SHF-T

Description: ​The AT45DB321E-SHF-T is a 32-megabit (Mb) serial flash memory device from Renesas Elect ...
Package: T&R | MOQ: 2000 | MPQ: 2000

N25Q256A13E1240E / ​The N25Q256A13E1240E is a 256-megabit (32MB) NOR Flash memory chip from Micron Technology, designed for high-performance and reliable non-volatile storage. It utilizes a Serial Peripheral Interface (SPI) supporting clock frequencies up to 108 MHz, facilitating rapid data transfer. The memory is organized into 512 main sectors of 64KB each, further divided into 8,192 subsectors of 4KB, allowing flexible and efficient memory management. Notable features include hardware-based write protection, 64 one-time programmable (OTP) bytes for secure data storage, and the ability to pause and resume program or erase cycles via dedicated suspend and resume instructions. Operating within a voltage range of 2.7V to 3.6V and a temperature range of -40°C to 85°C, it is suitable for various applications, including embedded systems, telecommunications, automotive electronics, industrial automation, and consumer electronics. ​
N25Q256A13E1240E

Description: ​The N25Q256A13E1240E is a 256-megabit (32MB) NOR Flash memory chip from Micron Technolo ...
Package: TRAY | MOQ: 1122 | MPQ: 1122

MT29F1G08ABADAH4-IT / ​The MT29F1G08ABADAH4-IT:D is a 1-gigabit (128M x 8) single-level cell (SLC) NAND flash memory device from Micron Technology. Operating within a voltage range of 2.7V to 3.6V, it offers reliable non-volatile storage suitable for a variety of applications. The device is designed to function effectively in industrial environments, supporting an operating temperature range from -40°C to 85°C. It is housed in a compact 63-ball VFBGA package, measuring 9mm x 11mm, facilitating efficient integration into space-constrained designs. However, it is important to note that this model has been classified as obsolete, and designers should consider this status when planning new projects. ​
MT29F1G08ABADAH4-IT

Description: ​The MT29F1G08ABADAH4-IT:D is a 1-gigabit (128M x 8) single-level cell (SLC) NAND flash ...
Package: TRAY | MOQ: 1260 | MPQ: 1260













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