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MX30LF2G18AC-XKI / The MX30LF2G18AC-XKI is a reliable <strong>2Gbit SLC NAND Flash memory</strong> developed by <strong>Macronix</strong>, designed for embedded storage applications requiring high endurance and stable non-volatile data retention. It features a memory organization of <strong>256M × 8 bits</strong>, enabling efficient parallel data access and integration with embedded processors. <br><br>The device utilizes <strong>single-level cell (SLC) NAND technology</strong>, providing enhanced reliability, faster program/erase cycles, and long data retention compared to multi-level cell solutions. It is organized with a <strong>page size of 2048 + 64 bytes</strong> and a <strong>block size of 128K + 4K bytes</strong>, optimizing memory management and data handling efficiency. <br><br>The MX30LF2G18AC-XKI operates via a <strong>parallel interface (x8 bus)</strong> and is compliant with the <strong>ONFI 1.0 standard</strong>, allowing compatibility with a wide range of NAND controllers and microprocessors. It supports fast access times of approximately <strong>20 ns</strong> and efficient program/erase operations for high-performance applications. <br><br>The device operates within a <strong>2.7V to 3.6V supply voltage range</strong>, ensuring compatibility with standard digital systems. It includes advanced features such as <strong>ECC support (4-bit per 512 bytes), cache read/program modes, and hardware data protection</strong>, enhancing data integrity and system reliability. <br><br>Designed for industrial environments, the memory supports an operating temperature range of <strong>-40°C to +85°C</strong> and offers endurance of up to <strong>100K program/erase cycles</strong> with long-term data retention. <br><br>Housed in a compact <strong>63-ball VFBGA surface-mount package</strong>, the MX30LF2G18AC-XKI enables high-density PCB layouts while maintaining strong electrical performance. <br><br>The <strong>MX30LF2G18AC-XKI</strong> is widely used in <strong>embedded systems, industrial controllers, networking devices, consumer electronics, and data logging applications</strong>, where robust and high-endurance non-volatile memory is required.
MX30LF2G18AC-XKI

Description: The MX30LF2G18AC-XKI is a reliable 2Gbit SLC NAND Flash memory developed ...
Package: T&R | MOQ: 1000 | MPQ: 1000

NAND01GR3B2CZA6E / The NAND01GR3B2CZA6E is a high-density <strong>1Gbit NAND Flash memory</strong> developed by <strong>Micron Technology (Numonyx/ST lineage)</strong>, designed for embedded storage applications requiring reliable non-volatile memory. It features a memory organization of <strong>128M × 8 bits</strong>, enabling efficient parallel data access and storage operations. <br><br>The device utilizes <strong>NAND flash technology</strong>, providing high storage density with efficient erase and program operations. It is based on a <strong>parallel interface architecture</strong>, allowing straightforward integration with microcontrollers, processors, and embedded systems. <br><br>The NAND01GR3B2CZA6E supports <strong>page-based memory structure (2112 bytes per page)</strong>, optimizing read/write efficiency and enabling high-speed data handling in storage-intensive applications. <br><br>Operating at a low supply voltage range of <strong>1.7V to 1.95V (typ. 1.8V)</strong>, the device is well-suited for low-power and portable designs. It provides access and write cycle times of approximately <strong>25 ns</strong>, ensuring responsive data operations. <br><br>The memory is built with a <strong>surface-mount 63-ball VFBGA package</strong>, enabling compact PCB layouts while maintaining reliable electrical performance. It operates across an industrial temperature range of <strong>-40°C to +85°C</strong>, making it suitable for demanding environments. <br><br>The <strong>NAND01GR3B2CZA6E</strong> is widely used in <strong>embedded systems, industrial controllers, consumer electronics, networking equipment, and data storage applications</strong>, where compact, cost-effective, and non-volatile memory solutions are required.
NAND01GR3B2CZA6E

Description: The NAND01GR3B2CZA6E is a high-density 1Gbit NAND Flash memory developed ...
Package: T&R | MOQ: 1000 | MPQ: 1000

SDINBDG4-16G-XI2 / The SDINBDG4-16G-XI2 is a high-reliability <strong>16GB embedded eMMC flash memory</strong> developed by <strong>SanDisk (Western Digital)</strong>, designed for industrial and embedded applications requiring stable and durable non-volatile storage. It integrates NAND flash memory and a controller in a single compact package, simplifying system design and improving data management efficiency. <br><br>This device is based on advanced <strong>MLC NAND flash technology</strong> and provides a fully managed storage solution with built-in <strong>error correction (ECC), wear leveling, and bad block management</strong>, ensuring long-term reliability and consistent performance. <br><br>The SDINBDG4-16G-XI2 supports the <strong>standard eMMC interface</strong>, enabling seamless communication with host processors through a high-speed parallel interface, making it suitable for embedded systems and industrial controllers. It operates within a supply voltage range of approximately <strong>2.7V to 3.6V</strong>, allowing compatibility with a wide range of digital platforms. <br><br>Designed for demanding environments, the device offers <strong>high endurance and reliability</strong>, making it ideal for continuous operation in industrial and IoT applications. It incorporates advanced firmware features that enhance data integrity and optimize performance under heavy workloads. <br><br>Housed in a compact <strong>FBGA surface-mount package</strong>, the SDINBDG4-16G-XI2 enables high-density PCB layouts while maintaining strong electrical and thermal performance. <br><br>The <strong>SDINBDG4-16G-XI2</strong> is widely used in <strong>industrial automation, IoT gateways, embedded computing systems, networking devices, surveillance equipment, and transportation systems</strong>, where reliable and efficient embedded storage is critical.
SDINBDG4-16G-XI2

Description: The SDINBDG4-16G-XI2 is a high-reliability 16GB embedded eMMC flash memory ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT25QU02GCBB8E12-0AUT / The MT25QU02GCBB8E12-0AUT is a high-density <strong>2Gb serial NOR Flash memory</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial applications, and high-performance code storage. It provides a large storage capacity organized internally for efficient data access and fast read operations. <br><br>The device utilizes a <strong>quad SPI (QSPI) interface</strong>, enabling high-speed data transfer with multiple I/O lines and supporting enhanced throughput compared to standard SPI flash memories. It is capable of operating at clock frequencies up to approximately <strong>133 MHz</strong>, ensuring fast execution for code and data retrieval. <br><br>Built with advanced flash architecture, the MT25QU02GCBB8E12-0AUT supports <strong>execute-in-place (XIP)</strong>, allowing systems to run code directly from the flash memory without copying it into RAM, thereby improving system efficiency and reducing latency. <br><br>The memory operates at a low <strong>1.7V to 2.0V supply voltage (typ. 1.8V)</strong>, offering reduced power consumption suitable for energy-sensitive designs. It also includes features such as <strong>sector and block erase, program suspend/resume, deep power-down mode, and advanced security registers</strong> for flexible memory management and enhanced data protection. <br><br>Packaged in a compact <strong>24-ball UFBGA surface-mount package</strong>, the device is optimized for space-constrained PCB layouts while maintaining strong electrical performance. <br><br>The <strong>MT25QU02GCBB8E12-0AUT</strong> is widely used in <strong>embedded systems, IoT devices, automotive electronics, industrial control systems, networking equipment, and consumer electronics</strong>, where high-density, reliable, and high-speed non-volatile memory is required.
MT25QU02GCBB8E12-0AUT

Description: The MT25QU02GCBB8E12-0AUT is a high-density 2Gb serial NOR Flash memory d ...
Package: T&R | MOQ: 1000 | MPQ: 1000

GD25Q64ESIG / The GD25Q64ESIG is a high-performance 64Mbit (8MB) SPI NOR Flash memory developed by GigaDevice, designed for reliable code storage and data retention in embedded and consumer electronic systems. It supports standard SPI as well as Dual and Quad SPI (QSPI) interfaces, enabling high-speed data transfer and efficient system performance.<br><br>Operating within a supply voltage range of 2.7V to 3.6V, the device is optimized for low-power applications while maintaining stable operation across an industrial temperature range of -40°C to +85°C. The memory supports clock frequencies up to 133 MHz, allowing fast read access and execute-in-place (XIP) capability for embedded firmware execution.<br><br>The GD25Q64ESIG features a flexible memory architecture with 256-byte programmable pages and multiple sector/block erase options, enabling efficient memory management. It also offers high endurance of up to 100,000 program/erase cycles and long data retention of up to 20 years, ensuring reliability in long-term applications.<br><br>Additional features include write protection mechanisms, security registers, suspend/resume operations, and unique device ID, enhancing system security and flexibility.<br><br>Packaged in a compact SOP-8 surface-mount form factor, the GD25Q64ESIG is widely used in applications such as firmware storage, IoT devices, industrial control systems, automotive electronics, networking equipment, and consumer electronics, where fast, reliable non-volatile memory is essential.<br><br> Equivalent Parts : W25Q64JVSIQ, W25Q64JVSSIQ, W25Q64FVSSIG, MT25QL64ABA, MT25QL64ABA1ESE, N25Q064A13ESE, S25FL064L, S25FL064P, MX25L6406E, MX25R6435F, AT25DF641, AT25SF641, IS25LP064A, EN25Q64, XM25QH64C(ESP32 Second source), GD25Q64CSIG, GD25Q64BSIG, GD25X64EYSG
GD25Q64ESIG

Description: The GD25Q64ESIG is a high-performance 64Mbit (8MB) SPI NOR Flash memory developed by GigaD ...
Package: T&R | MOQ: 2000 | MPQ: 2000

GD25Q32ESIG / The GD25Q32ESIG is a high-performance 32Mbit (4MB) SPI NOR Flash memory developed by GigaDevice, designed for code storage and data retention in embedded systems and consumer electronics. It supports standard SPI as well as Dual and Quad SPI interfaces, enabling high-speed data transfer and efficient system performance.<br><br>Operating within a supply voltage range of 2.7V to 3.6V, the device is optimized for low-power applications while maintaining stable performance across industrial environments. It supports clock frequencies up to 133 MHz, providing fast read access and enabling execute-in-place (XIP) capabilities for firmware execution.<br><br>The memory architecture includes 256-byte programmable pages, sector and block erase options, and a total organization of 4M × 8, allowing flexible and efficient memory management. Typical page program time is around a few milliseconds, supporting fast write operations.<br><br>Additional features include low power consumption, high endurance, data retention up to decades, write protection mechanisms, and support for suspend/resume operations, making it suitable for reliable long-term storage.<br><br>Packaged in a compact SOP-8 surface-mount form factor, the GD25Q32ESIG is widely used in applications such as firmware storage, IoT devices, industrial control systems, consumer electronics, networking equipment, and embedded systems, where reliable non-volatile memory and high-speed access are essential.
GD25Q32ESIG

Description: The GD25Q32ESIG is a high-performance 32Mbit (4MB) SPI NOR Flash memory developed by GigaD ...
Package: T&R | MOQ: 2000 | MPQ: 2000

GD25Q16ESIG / The GD25Q16ESIG is a high-performance 16Mbit (2MB) SPI NOR Flash memory developed by GigaDevice, designed for code storage and data retention in embedded and consumer electronics applications. It supports standard SPI as well as Dual and Quad SPI interfaces, enabling higher data throughput and flexible system integration.<br><br>Operating within a supply voltage range of 2.7V to 3.6V, the device is optimized for low-power designs while maintaining stable performance across industrial temperature ranges. It supports clock frequencies up to 133 MHz, allowing fast read operations and efficient firmware execution.<br><br>The memory architecture includes 256-byte programmable pages, 4KB sectors, and multiple block erase options, providing flexible memory management for embedded systems. It also supports advanced features such as suspend/resume operations, write protection, security registers with OTP locks, and unique device ID for enhanced system security.<br><br>With endurance of up to 100,000 program/erase cycles and data retention of up to 20 years, the GD25Q16ESIG ensures long-term reliability in demanding applications. Its compact SOP-8 package makes it suitable for space-constrained PCB designs.<br><br>The GD25Q16ESIG is widely used in applications such as firmware storage, IoT devices, industrial control systems, consumer electronics, networking equipment, and embedded systems, where reliable non-volatile memory and fast access speeds are essential.
GD25Q16ESIG

Description: The GD25Q16ESIG is a high-performance 16Mbit (2MB) SPI NOR Flash memory developed by GigaD ...
Package: T&R | MOQ: 2000 | MPQ: 2000

GD25Q128ESIG / The GD25Q128ESIG is a high-performance 128Mbit (16MB) SPI NOR Flash memory developed by GigaDevice, designed for code storage and data retention in embedded systems and consumer electronics. It supports standard SPI as well as Dual and Quad SPI interfaces, enabling high-speed data transfer and efficient system performance.<br><br>Operating within a supply voltage range of 2.7V to 3.6V, the device is optimized for low-power applications while maintaining reliable performance across an industrial temperature range of -40°C to +85°C.<br><br>The GD25Q128ESIG supports clock frequencies up to 133 MHz, delivering fast read access and high throughput for firmware execution and data storage. It features flexible erase options including sector, block, and chip erase, along with a 256-byte page program architecture, enabling efficient memory management.<br><br>With endurance up to 100,000 program/erase cycles and long data retention (up to 20 years), the device ensures long-term reliability in demanding applications. Additional features such as hardware write protection, security registers, suspend/resume operations, and unique ID support enhance system security and flexibility.<br><br>Packaged in a compact SOP-8 surface-mount format, the GD25Q128ESIG is widely used in applications such as firmware storage, IoT devices, industrial control systems, automotive electronics, networking equipment, and consumer electronics, where reliable non-volatile memory and fast access speeds are essential.
GD25Q128ESIG

Description: The GD25Q128ESIG is a high-performance 128Mbit (16MB) SPI NOR Flash memory developed by Gi ...
Package: T&R | MOQ: 2000 | MPQ: 2000

W25Q64JVSSIQ / The W25Q64JVSSIQ is a 64Mbit (8MB) serial NOR Flash memory designed for code storage and embedded data applications. It operates with a supply voltage range of 2.7 V to 3.6 V and supports standard SPI, Dual SPI, and Quad SPI interfaces for high-speed communication.<br><br> The device supports clock frequencies up to 133 MHz and enables execute-in-place (XIP), allowing code to run directly from flash memory. It is organized as 8M × 8 with 256-byte programmable pages and flexible erase options including 4KB sectors, 32KB and 64KB blocks. <br><br> It features low power consumption (down to ~1 µA in power-down mode), high endurance (typically 100,000 program/erase cycles), and long data retention (20+ years). The device operates over an industrial temperature range of -40°C to +85°C and is widely used in microcontrollers, IoT devices, consumer electronics, and industrial embedded systems requiring reliable non-volatile storage.
W25Q64JVSSIQ

Description: The W25Q64JVSSIQ is a 64Mbit (8MB) serial NOR Flash memory designed for code storage and e ...
Package: TUBE | MOQ: 1080 | MPQ: 90

W25Q128JVSIQ / The W25Q128JVSIQ is a 128Mbit (16MB) serial NOR Flash memory designed for code storage and data logging applications. It operates with a supply voltage range of 2.7 V to 3.6 V and supports standard SPI, Dual SPI, and Quad SPI interfaces for high-speed data transfer.<br><br> The device supports clock frequencies up to 133 MHz and enables execute-in-place (XIP) functionality, allowing code to run directly from the flash memory without copying to RAM. It is organized as 16M x 8 with 4KB sectors and 256-byte programmable pages, providing flexible memory management. <br><br>It features low power consumption (down to ~1 µA in power-down mode), high endurance (typically 100,000 program/erase cycles), and long data retention (20+ years). The device operates over an industrial temperature range of -40°C to +85°C and is widely used in embedded systems, microcontrollers, IoT devices, consumer electronics, and industrial applications requiring reliable non-volatile storage.
W25Q128JVSIQ

Description: The W25Q128JVSIQ is a 128Mbit (16MB) serial NOR Flash memory designed for code storage and ...
Package: TUBE | MOQ: 1080 | MPQ: 90

W25Q80DLSNIG / ​The W25Q80DLSNIG is an 8-megabit (Mb) NOR flash memory device from Winbond Electronics, designed for high-speed and reliable data storage in various applications. It operates over a supply voltage range of 2.3 V to 3.6 V, making it suitable for systems with varying power requirements. The device features a memory organization of 1 megabit x 8 bits and supports a high-speed SPI interface with Quad I/O capability, enabling data transfer rates up to 80 MHz. It offers fast access times, with a maximum of 6 ns, ensuring quick data retrieval. The W25Q80DLSNIG is housed in an 8-pin SOIC package (0.154
W25Q80DLSNIG

Description: ​The W25Q80DLSNIG is an 8-megabit (Mb) NOR flash memory device from Winbond Electronics, ...
Package: TUBE | MOQ: 1000 | MPQ: 100

AT45DB321E-SHF-T / ​The AT45DB321E-SHF-T is a 32-megabit (Mb) serial flash memory device from Renesas Electronics, designed for efficient data storage in various applications. It operates with a single supply voltage ranging from 2.3 V to 3.6 V, making it suitable for low-power systems. The device supports the Serial Peripheral Interface (SPI) and is compatible with SPI modes 0 and 3, allowing for flexible communication with microcontrollers and other peripherals. It offers a maximum clock frequency of 85 MHz, enabling high-speed data transfer. The memory is organized into 8,192 pages of either 512 or 528 bytes each, with user-configurable page size options. Additionally, it features two independent SRAM data buffers of the same size, facilitating efficient data management. The AT45DB321E-SHF-T provides various programming and erase options, including byte/page programming, page erase, block erase (4 KB), sector erase (64 KB), and chip erase (32 Mb). It also includes advanced hardware and software data protection features, such as individual sector protection and a 128-byte One-Time Programmable (OTP) security register. The device exhibits low power consumption, with typical active read current at 7 mA, standby current at 25 µA, deep power-down current at 3 µA, and ultra-deep power-down current at 400 nA. It is housed in an 8-lead SOIC package and operates over a temperature range of -40°C to 85°C, ensuring reliability in various environmental conditions. ​
AT45DB321E-SHF-T

Description: ​The AT45DB321E-SHF-T is a 32-megabit (Mb) serial flash memory device from Renesas Elect ...
Package: T&R | MOQ: 2000 | MPQ: 2000

N25Q256A13E1240E / ​The N25Q256A13E1240E is a 256-megabit (32MB) NOR Flash memory chip from Micron Technology, designed for high-performance and reliable non-volatile storage. It utilizes a Serial Peripheral Interface (SPI) supporting clock frequencies up to 108 MHz, facilitating rapid data transfer. The memory is organized into 512 main sectors of 64KB each, further divided into 8,192 subsectors of 4KB, allowing flexible and efficient memory management. Notable features include hardware-based write protection, 64 one-time programmable (OTP) bytes for secure data storage, and the ability to pause and resume program or erase cycles via dedicated suspend and resume instructions. Operating within a voltage range of 2.7V to 3.6V and a temperature range of -40°C to 85°C, it is suitable for various applications, including embedded systems, telecommunications, automotive electronics, industrial automation, and consumer electronics. ​
N25Q256A13E1240E

Description: ​The N25Q256A13E1240E is a 256-megabit (32MB) NOR Flash memory chip from Micron Technolo ...
Package: TRAY | MOQ: 1122 | MPQ: 1122

MT29F1G08ABADAH4-IT / ​The MT29F1G08ABADAH4-IT:D is a 1-gigabit (128M x 8) single-level cell (SLC) NAND flash memory device from Micron Technology. Operating within a voltage range of 2.7V to 3.6V, it offers reliable non-volatile storage suitable for a variety of applications. The device is designed to function effectively in industrial environments, supporting an operating temperature range from -40°C to 85°C. It is housed in a compact 63-ball VFBGA package, measuring 9mm x 11mm, facilitating efficient integration into space-constrained designs. However, it is important to note that this model has been classified as obsolete, and designers should consider this status when planning new projects. ​
MT29F1G08ABADAH4-IT

Description: ​The MT29F1G08ABADAH4-IT:D is a 1-gigabit (128M x 8) single-level cell (SLC) NAND flash ...
Package: TRAY | MOQ: 1260 | MPQ: 1260













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