Products Power Switch LMG3410R070RWHR


LMG3410R070RWHR


LMG3410R070RWHR, Power Switch, from Texas Instruments in Stock Hong Kong The LMG3410R070RWHR is a highly advanced <strong>600V gallium nitride (GaN) power stage</strong> developed by <strong>Texas Instruments</strong>, inte

The image is for illustrative purposes only; please refer to the product data sheet for precise specifications.


GET QUOTE NOW!

Part Number LMG3410R070RWHR
Manufacturer Texas Instruments Official Vector Logo Texas Instruments
Description The LMG3410R070RWHR is a highly advanced 600V gallium nitride (GaN) power stage developed by Texas Instruments, integrating both a high-performance GaN FET and a dedicated gate driver in a single compact package. This integration simplifies design while significantly improving switching performance and efficiency compared to traditional silicon-based solutions.

Designed for high-voltage applications, the device features a typical 70mΩ on-resistance and supports operation in systems powered from 350V to 480V DC bus ranges, making it ideal for industrial and power conversion applications.

The LMG3410R070RWHR enables extremely fast switching speeds with capabilities up to approximately 100V/ns transition rates, reducing switching losses and enabling higher efficiency designs. Its GaN technology offers zero reverse recovery charge, which can reduce switching losses by up to 80% compared to silicon MOSFETs, especially in hard-switched topologies.

Integrated protection features include overcurrent protection with fast response (<100ns), overtemperature shutdown, and undervoltage lockout, ensuring safe and reliable operation in demanding environments. These features enhance system robustness and reduce the need for additional external protection circuits.

The device is optimized for high-frequency operation and supports applications such as totem-pole PFC, LLC resonant converters, phase-shifted full-bridge converters, and high-efficiency DC-DC power supplies, where high power density and efficiency are critical.

Encapsulated in a thermally efficient 32-pin VQFN surface-mount package (8mm × 8mm), the LMG3410R070RWHR allows compact PCB layouts while maintaining excellent thermal performance.

The LMG3410R070RWHR is widely used in server power supplies, telecom infrastructure, industrial power systems, renewable energy converters, motor drives, and high-voltage fast-switching applications, where superior efficiency, compact design, and high switching speed are essential.
Product Group Power Switch
MOQ 2000 pcs
SPQ 2000 pcs
Figure/Case VQFN-32
Package T&R Pack
PDF PDF Datasheet
Ship From Hong Kong
Shipment Way DHL / Fedex / TNT / UPS / Others
Delivery Term Ex-Works
Send RFQ sales@signalhk.com



Request quotation for
LMG3410R070RWHR
CAPTCHA Image












Room 1304, 13/F, Allways Centre, 468 Jaffe Road, Causeway Bay, Hong Kong.



Copyright © 2008-2024 Signal HK Limited. All Rights Reserved.Designated trademarks and brands are the property of their respective owners.
Use of this Website constitutes acceptance of Signal HK Limited Terms of Use and Privacy Policy
LMG3410R070RWHR datasheet, LMG3410R070RWHR specifications, LMG3410R070RWHR features, LMG3410R070RWHR pinout, LMG3410R070RWHR Arduino, LMG3410R070RWHR price, LMG3410R070RWHR circuit diagram, LMG3410R070RWHR development board, LMG3410R070RWHR app LMG3410R070RWHR Application LMG3410R070RWHR Stock Quote LMG3410R070RWHR Best Price LMG3410R070RWHR Free Stock LMG3410R070RWHR Lead Time LMG3410R070RWHR Delivery Time LMG3410R070RWHR Stock , LMG3410R070RWHR GaN power stage, LMG3410R070RWHR datasheet, LMG3410R070RWHR price, LMG3410R070RWHR supplier, LMG3410R070RWHR distributor, LMG3410R070RWHR buy online, LMG3410R070RWHR stock, LMG3410R070RWHR 600V GaN FET, LMG3410R070RWHR integrated driver GaN, LMG3410R070RWHR 70mOhm GaN IC, LMG3410R070RWHR high efficiency power IC, LMG3410R070RWHR fast switching GaN, LMG3410R070RWHR VQFN32 power IC, LMG3410R070RWHR PFC GaN transistor, LMG3410R070RWHR high voltage switch IC, LMG3410R070RWHR power conversion IC