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BQ27010DRKR / ​The BQ27010DRKR is a battery gas gauge IC from Texas Instruments, designed for single-cell Li-Ion and Li-Pol applications. It monitors battery voltage, current, and temperature to provide accurate state-of-charge and health information. The device communicates via the HDQ one-wire interface and operates over a temperature range of -20°C to 70°C. It is housed in a 10-pin VSON package measuring 3 mm × 4 mm, suitable for portable applications where space is limited. ​
BQ27010DRKR

Description: ​The BQ27010DRKR is a battery gas gauge IC from Texas Instruments, designed for single-c ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BQ294504DRVR / The BQ294504DRVR is an overvoltage protection IC from Texas Instruments, designed for secondary protection in 2- and 3-series Li-Ion battery packs. It independently monitors each cell for overvoltage conditions, triggering a high output after a fixed delay if any cell exceeds the overvoltage threshold. The overvoltage protection threshold is adjustable between 3.85 V and 4.6 V, with fixed delay options of 4 seconds or 6.5 seconds, and offers high-accuracy protection with a tolerance of ±10 mV. The device operates with low supply current, approximately 1 µA when all cell voltages are below the protection threshold, and minimal leakage current per cell input, less than 100 nA. Housed in a compact 6-pin WSON package (2 mm × 2 mm), the BQ294504DRVR is suitable for applications requiring secondary overvoltage protection in Li-Ion battery packs. ​
BQ294504DRVR

Description: The BQ294504DRVR is an overvoltage protection IC from Texas Instruments, designed for seco ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BQ29410PWRG4 / ​The BQ29410PWRG4 is a secondary overvoltage protection IC from Texas Instruments, designed for 2-, 3-, or 4-cell series-connected Li-Ion or Li-Polymer battery packs. It features a fixed overvoltage protection threshold of 4.35 V per cell, ensuring precise monitoring and protection. The device incorporates a programmable delay circuit for overvoltage detection, allowing customization of response times to suit specific application requirements. It operates with low power consumption, drawing less than 2 µA when all cell voltages are below the protection threshold, which helps extend battery life. The BQ29410PWRG4 is housed in an 8-pin TSSOP package (PW), suitable for surface-mount applications. ​
BQ29410PWRG4

Description: ​The BQ29410PWRG4 is a secondary overvoltage protection IC from Texas Instruments, desig ...
Package: T&R | MOQ: 2000 | MPQ: 2000

BQ24352DSGR / ​The BQ24352DSGR is an over-voltage and over-current charger front-end protection IC from Texas Instruments, designed to safeguard Li-ion batteries in portable applications. It continuously monitors input and battery voltages, as well as input current, to provide comprehensive protection. In the event of an input over-voltage condition, the IC turns off the internal power FET after a brief blanking period. Similarly, if the battery voltage rises to unsafe levels during charging, the IC disconnects power from the system. It also features over-current protection by turning off the output power if the input current exceeds the threshold for a specified duration. The integrated charging FET allows for regulation of charge voltage and current under host control. Additionally, the IC offers low-dropout (LDO) mode operation, providing a current-limited power supply for the host controller. Housed in a compact 8-pin WSON package (2 mm × 2 mm), the BQ24352DSGR operates over a junction temperature range of -40°C to 125°C, making it suitable for space-constrained and temperature-sensitive applications. ​
BQ24352DSGR

Description: ​The BQ24352DSGR is an over-voltage and over-current charger front-end protection IC fro ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BQ294582DRVT / ​The BQ294582DRVT is a secondary overvoltage protection IC from Texas Instruments, designed for 2-series and 3-series Li-Ion battery packs. It independently monitors each cell for overvoltage conditions, triggering a high output after a fixed delay if any cell exceeds the predefined threshold. The overvoltage protection threshold is adjustable between 3.85 V and 4.6 V, with delay options of 4 seconds or 6.5 seconds. The device ensures high-accuracy protection with a tolerance of ±10 mV. It operates with a low supply current of approximately 1 µA when all cell voltages are below the protection threshold and features minimal leakage current per cell input, less than 100 nA. Housed in a compact 6-pin WSON package (2 mm × 2 mm), the BQ294582DRVT is suitable for applications such as tablets, slates, power tools, notebook computers, and portable equipment requiring secondary protection in Li-Ion battery packs. ​
BQ294582DRVT

Description: ​The BQ294582DRVT is a secondary overvoltage protection IC from Texas Instruments, desig ...
Package: T&R | MOQ: 250 | MPQ: 250

BQ27320YZFR / ​The BQ27320YZFR is a single-cell battery fuel gauge IC from Texas Instruments, utilizing Compensated End-of-Discharge Voltage (CEDV) technology to accurately estimate battery parameters such as remaining capacity, state-of-charge, runtime-to-empty, voltage, temperature, and state-of-health. It supports battery capacities ranging from 100 mAh to 14,500 mAh and accommodates up to four separate battery profiles for pack swapping. The device features an I²C interface for communication and operates over an ambient temperature range of -40°C to 85°C. It is housed in a compact 15-pin NanoFree™ (DSBGA) package measuring 1.375 mm × 2.75 mm with a 0.5 mm pitch, making it suitable for space-constrained applications. ​
BQ27320YZFR

Description: ​The BQ27320YZFR is a single-cell battery fuel gauge IC from Texas Instruments, utilizin ...
Package: T&R | MOQ: 3000 | MPQ: 3000

EMB1428QSQX/NOPB / ​The EMB1428QSQX/NOPB is a switch matrix gate driver IC from Texas Instruments, specifically designed to facilitate active cell balancing in multi-cell lithium-ion battery management systems. Operating with a maximum stack voltage of 60 V, it provides 12 floating gate drivers capable of balancing up to seven series-connected battery cells; additional ICs can be stacked to manage more cells. The device interfaces with the EMB1499 DC/DC controller via an SPI bus, enabling charge and discharge commands as well as fault reporting. It also features a low-power sleep mode to enhance efficiency. Qualified under AEC-Q100 Grade 1, the EMB1428QSQX/NOPB is suitable for automotive applications, with an operating junction temperature range of -40°C to +125°C. ​
EMB1428QSQX/NOPB

Description: ​The EMB1428QSQX/NOPB is a switch matrix gate driver IC from Texas Instruments, specific ...
Package: T&R | MOQ: 2500 | MPQ: 2500

BQ294582DRVR / ​The BQ294582DRVR is an overvoltage protection IC from Texas Instruments, designed for 2-series and 3-series Li-Ion battery packs. It independently monitors each cell for overvoltage conditions, triggering an output after a fixed delay if any cell exceeds the overvoltage threshold. The device offers a fixed overvoltage protection threshold adjustable between 3.85 V and 4.6 V, with delay options of 4 seconds or 6.5 seconds. It ensures high-accuracy overvoltage protection with a tolerance of ±10 mV. The BQ294582DRVR operates with a low supply current of approximately 1 µA when all cell voltages are below the protection threshold and features minimal leakage current per cell input, less than 100 nA. Housed in a compact 6-pin WSON package (2 mm × 2 mm), it is suitable for applications requiring secondary protection in Li-Ion battery packs, such as tablets, slates, power tools, notebook computers, and portable equipment. ​
BQ294582DRVR

Description: ​The BQ294582DRVR is an overvoltage protection IC from Texas Instruments, designed for 2 ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BQ27210DRKR / The BQ27210DRKR is a battery gas gauge integrated circuit (IC) from Texas Instruments, designed for single-cell Li-Ion and Li-Polymer batteries in portable applications. It operates with a supply voltage between 2.6 V and 4.5 V, featuring low active current consumption of 52 to 90 µA and sleep current of 1.0 to 2.5 µA, enhancing battery life. The IC communicates via an I²C interface and is housed in a compact 10-pin VSON package measuring 3 mm × 4 mm, suitable for space-constrained designs.
BQ27210DRKR

Description: The BQ27210DRKR is a battery gas gauge integrated circuit (IC) from Texas Instruments, des ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BQ27530YZFR-G1 / ​The BQ27530YZFR-G1 is a system-side fuel gauge IC from Texas Instruments, designed for single-cell Li-Ion and Li-Polymer batteries. It employs Impedance Track™ technology to accurately estimate battery parameters such as remaining capacity (mAh), state-of-charge (%), runtime-to-empty (minutes), battery voltage (mV), temperature (°C), and state-of-health (%). Operating with a supply voltage between 2.8 V and 4.5 V, it typically consumes a current of 118 µA. The device communicates via an I²C interface and supports battery capacities ranging from 300 mAh to 8000 mAh. It operates within an ambient temperature range of -40°C to 85°C and is packaged in a compact 15-pin DSBGA measuring 1.75 mm × 2.75 mm with a 0.5 mm pitch, making it suitable for space-constrained applications. ​
BQ27530YZFR-G1

Description: ​The BQ27530YZFR-G1 is a system-side fuel gauge IC from Texas Instruments, designed for ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BQ29716DSER / ​The BQ29716DSER is a battery protection integrated circuit (IC) from Texas Instruments, tailored for single-cell Li-Ion and Li-Polymer batteries. It offers comprehensive protection features, including overcurrent, overvoltage, undervoltage, and short-circuit safeguards, ensuring the safety and longevity of battery packs. The IC operates with a supply voltage ranging from 1.5 V to 8 V and features battery overvoltage protection thresholds between 3.85 V and 4.6 V. Its typical operating current is approximately 4 µA, contributing to extended battery life. Designed for reliability, the BQ29716DSER functions optimally within an ambient temperature range of -40°C to 85°C. It comes in a compact 6-pin WSON package (1.5 mm × 1.5 mm) with a 0.5 mm pitch, suitable for space-constrained applications. ​
BQ29716DSER

Description: ​The BQ29716DSER is a battery protection integrated circuit (IC) from Texas Instruments, ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BQ27505YZGR-J4 / ​The BQ27505-J4 is a system-side fuel gauge designed for single-cell Li-Ion battery applications. It utilizes Texas Instruments Impedance Track™ technology to accurately predict battery runtime and state-of-charge by modeling the batterys discharge curve. This device provides precise measurements of remaining capacity (mAh), state-of-charge (%), runtime to empty (minutes), battery voltage (mV), temperature (°C), and state of health (%). It features a 400-kHz I²C interface for seamless communication with the systems microcontroller. The BQ27505-J4 operates within an ambient temperature range of -40°C to 85°C and is housed in a compact 12-pin NanoFree™ (CSP) package measuring 2.43 mm × 1.96 mm with a 0.5 mm lead pitch, making it suitable for space-constrained applications. ​
BQ27505YZGR-J4

Description: ​The BQ27505-J4 is a system-side fuel gauge designed for single-cell Li-Ion battery appl ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BQ296111DSGR / ​The BQ296111DSGR is a high-accuracy, low-power overvoltage protector designed for 2-series to 4-series Li-ion battery packs. It individually monitors each cell for overvoltage conditions, initiating an internal fixed-delay timer upon detection. If the overvoltage persists beyond the timer's delay (selectable between 3 to 6.5 seconds), the device triggers an active-high output to signal the overvoltage event. It offers regulated supply output options of 3.3 V, 2.5 V, or 1.8 V, delivering up to 2 mA of output current to power peripheral circuits like real-time clocks. The BQ296111DSGR features low operating current consumption of approximately 4 µA when all cell voltages are below the overvoltage protection threshold, and even lower consumption around 1.2 µA when the regulated output is disabled. Additionally, it ensures minimal leakage current per cell input, less than 100 nA. Encased in a compact 8-pin WSON package (2 mm × 2 mm), it is suitable for applications including notebook PCs, ultrabooks, medical devices, and UPS battery backups. ​
BQ296111DSGR

Description: ​The BQ296111DSGR is a high-accuracy, low-power overvoltage protector designed for 2-ser ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BQ27411DRZR-G1C / ​The BQ27411DRZR-G1C is a fuel gauge integrated circuit (IC) from Texas Instruments, specifically designed for single-cell lithium-ion (Li-Ion) battery packs. It operates over a supply voltage range of 2.45 V to 4.5 V, making it suitable for various battery-powered applications. The device utilizes Impedance Track™ technology to provide accurate state-of-charge (SOC) calculations by measuring real-time impedance, delivering precise information on remaining battery capacity, SOC percentage, and battery voltage. It features a 400-kHz I²C serial interface for seamless communication with microcontrollers. An internal temperature sensor is present, though it can be bypassed if the host system provides temperature data. The BQ27411DRZR-G1C is housed in a compact 12-pin, 2.5 mm × 4.0 mm, Small Outline No-Lead (SON) package, making it ideal for space-constrained applications requiring efficient battery management. ​
BQ27411DRZR-G1C

Description: ​The BQ27411DRZR-G1C is a fuel gauge integrated circuit (IC) from Texas Instruments, spe ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BQ24382DSGR / ​The BQ24382DSGR is an overvoltage and overcurrent protection integrated circuit (IC) from Texas Instruments, designed to safeguard lithium-ion (Li-ion) batteries in charging applications. It operates with a supply voltage up to 30 V, making it suitable for various input sources. The device maintains a 5.5-V output (for the bq24380 variant) or a 5-V output (for the bq24381 and bq24382 variants) by regulating input voltages up to the overvoltage threshold. If the input voltage exceeds this threshold, the internal pass FET disconnects the charging circuit to prevent damage. Additionally, the BQ24382DSGR offers protection against battery overvoltage conditions, output short circuits, and thermal shutdown, ensuring safe and reliable battery charging operations. ​
BQ24382DSGR

Description: ​The BQ24382DSGR is an overvoltage and overcurrent protection integrated circuit (IC) fr ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BQ29442DRBR / ​The BQ29442DRBR is a secondary overvoltage protection IC from Texas Instruments, designed for 2- to 4-series cell lithium-ion (Li-Ion) battery packs. It operates with a supply voltage range between 4 V and 25 V, making it suitable for various battery configurations. The device features high-accuracy overvoltage detection with thresholds selectable among 4.30 V, 4.35 V, 4.40 V, 4.45 V, and 4.50 V per cell, with a precision of ±25 mV at temperatures between 0°C and 60°C. Upon detecting an overvoltage condition, the BQ29442DRBR initiates a delay timer determined by an external capacitor connected to the CD pin. Once the timer expires, the OUT pin transitions from low to high, signaling the overvoltage event. An optional latch function is available, holding the OUT pin high indefinitely until the CD pin is shorted to ground, providing flexibility based on application requirements. The device is housed in a compact 8-pin SON (3x3) package, suitable for surface-mount applications. ​
BQ29442DRBR

Description: ​The BQ29442DRBR is a secondary overvoltage protection IC from Texas Instruments, design ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BQ27425YZFR-G2B / ​The BQ27425YZFR-G2B is a fuel gauge integrated circuit (IC) from Texas Instruments, specifically designed for single-cell lithium-ion (Li-Ion) batteries. It operates over a supply voltage range of 2.8 V to 4.5 V, making it suitable for various battery-powered applications. Utilizing Impedance Track™ technology, the IC provides accurate state-of-charge (SOC) calculations by measuring real-time impedance, delivering precise information on remaining battery capacity, SOC percentage, and battery voltage. The device features a 400-kHz I²C serial interface for seamless communication with microcontrollers. It also includes programmable SOC interrupts and a battery low warning output to enhance system reliability. An internal temperature sensor is present, though it can be bypassed if the host system provides temperature data. Packaged in a compact 15-pin, 2.69 mm × 1.75 mm, 0.5-mm pitch chip-scale package (DSBGA), the BQ27425YZFR-G2B is ideal for space-constrained applications requiring efficient battery management. ​
BQ27425YZFR-G2B

Description: ​The BQ27425YZFR-G2B is a fuel gauge integrated circuit (IC) from Texas Instruments, spe ...
Package: T&R | MOQ: 3000 | MPQ: 3000

MSP430F6749AIPZR / ​The MSP430F6749AIPZR is a 16-bit microcontroller from Texas Instruments, designed for polyphase metering applications requiring high precision and low power consumption. It features a 16-bit MSP430 CPUXV2 core operating at up to 25 MHz, providing efficient processing capabilities. The device offers 512 KB of Flash memory and 32 KB of SRAM, accommodating substantial code and data storage needs. For analog-to-digital conversion, it includes four 24-bit sigma-delta ADCs, ensuring accurate measurement of multiple phases. Additional features include an integrated LCD driver, a real-time clock, an AES encryption module for secure data handling, and a comprehensive set of communication interfaces such as I²C, SPI, UART/USART, and LINbus. Operating over a supply voltage range of 1.8 V to 3.6 V, the MSP430F6749AIPZR is housed in a 100-pin LQFP package, suitable for space-constrained designs. ​
MSP430F6749AIPZR

Description: ​The MSP430F6749AIPZR is a 16-bit microcontroller from Texas Instruments, designed for p ...
Package: T&R | MOQ: 1000 | MPQ: 1000

HF920GS-Z / ​The HF920GS-Z is a fixed-frequency, off-line regulator from Monolithic Power Systems (MPS), designed to provide efficient power regulation in AC/DC applications requiring high reliability, such as smart meters, large appliances, and industrial controls. It features a monolithic 900V MOSFET, enabling direct AC line connection without the need for an external transistor. The operating supply voltage ranges from 10V to 24V, accommodating various input power sources. The HF920GS-Z utilizes peak-current-mode control to deliver excellent transient response and simplifies loop compensation. When output power falls below a certain threshold, the regulator enters burst mode, significantly reducing standby power consumption. It also incorporates a comprehensive suite of protection features, including under-voltage lockout (UVLO), overload protection (OLP), over-voltage protection (OVP), short-circuit protection (SCP), and over-temperature protection (OTP), ensuring robust and safe operation. The switching frequency is externally programmable with a single resistor, allowing optimization for specific applications and minimizing electromagnetic interference (EMI). The HF920GS-Z is housed in a 14-pin SOIC-11 package, suitable for surface-mount applications. ​
HF920GS-Z

Description: ​The HF920GS-Z is a fixed-frequency, off-line regulator from Monolithic Power Systems (M ...
Package: T&R | MOQ: 2500 | MPQ: 2500

STM32L073VZI6 / ​The STM32L073VZI6 is an ultra-low-power microcontroller from STMicroelectronics, featuring an Arm Cortex-M0+ core operating at up to 32 MHz, providing efficient performance for various embedded applications. It operates over a supply voltage range of 1.8 V to 3.6 V, suitable for battery-powered designs. The device offers 192 KB of Flash memory, 20 KB of SRAM, and 6 KB of EEPROM, accommodating substantial code and data storage needs. For analog functionalities, it includes a 12-bit ADC with up to 16 channels and two 12-bit DACs, enabling precise analog signal processing. Communication interfaces are comprehensive, featuring USB 2.0 (crystal-less), multiple USARTs, UARTs, SPIs, I2Cs, and a low-power UART, facilitating versatile connectivity options. Additional features include an LCD driver supporting up to 8 multiplexed LCDs, capacitive touch sensing with up to 24 channels, and a range of timers and watchdogs for robust system control. Operating over a temperature range of -40°C to 85°C, the STM32L073VZI6 is housed in a 100-pin UFBGA package, offering 84 I/O pins for flexible application design. ​
STM32L073VZI6

Description: ​The STM32L073VZI6 is an ultra-low-power microcontroller from STMicroelectronics, featur ...
Package: TRAY | MOQ: 2496 | MPQ: 2496

W25Q32JVSSIQ / ​The W25Q32JVSSIQ is a 32-megabit (Mb) serial NOR flash memory device from Winbond Electronics, designed for high-speed data storage in space-constrained applications. It operates with a supply voltage ranging from 2.7 V to 3.6 V, making it suitable for various power configurations. The device supports standard SPI as well as high-performance Dual and Quad SPI modes, enabling data transfer rates up to 133 MHz. Its memory array is organized into 16,384 programmable pages of 256 bytes each, with up to 256 bytes programmable at a time. Erase operations can be performed on sectors (4 KB), blocks (32 KB and 64 KB), or the entire chip, providing flexibility for different application requirements. Additional features include a unique ID, one-time programmable (OTP) area, and programmable output driver strength, enhancing security and customization options. The W25Q32JVSSIQ is available in an 8-pin SOIC package, suitable for surface-mount applications. ​
W25Q32JVSSIQ

Description: ​The W25Q32JVSSIQ is a 32-megabit (Mb) serial NOR flash memory device from Winbond Elect ...
Package: TUBE | MOQ: 900 | MPQ: 90

LP38501TSX-ADJ/NOPB / ​The LP38501TSX-ADJ/NOPB is a 3-A adjustable low-dropout (LDO) linear voltage regulator from Texas Instruments, designed to provide stable and efficient voltage regulation for various applications. It operates with an input voltage range of 2.7 V to 5.5 V, offering flexibility for different power supply configurations. The device features an adjustable output voltage capability from 0.6 V to 5 V, allowing precise regulation to meet specific system requirements. Its ultra-low dropout voltage, typically around 420 mV at 3-A load, ensures minimal voltage loss between input and output, enhancing overall power efficiency. The LP38501TSX-ADJ/NOPB is stable with any type of output capacitor, including ceramic, tantalum, or aluminum, without restrictions on equivalent series resistance (ESR), simplifying design and component selection. Additional features include a low ground-pin current, typically around 25 nA when the enable (EN) pin is pulled low, and fast transient response to rapid load changes, making it suitable for powering sensitive analog and digital circuits. The device is housed in a TO-263 (DDPAK-5) package, providing robust thermal performance and ease of integration into various applications. ​
LP38501TSX-ADJ/NOPB

Description: ​The LP38501TSX-ADJ/NOPB is a 3-A adjustable low-dropout (LDO) linear voltage regulator ...
Package: T&R | MOQ: 500 | MPQ: 500

MSP430F6748AIPZR / ​The MSP430F6748AIPZR is a 16-bit microcontroller from Texas Instruments, optimized for polyphase energy metering applications. It operates with a supply voltage ranging from 1.8 V to 3.6 V, making it suitable for low-power designs. The device features a high-performance MSP430 CPU with a 32-bit multiplier, capable of executing metrology calculations efficiently. It offers up to 512 KB of single-cycle Flash memory and 16 KB of SRAM, providing ample storage for program code and data. The MSP430F6748AIPZR integrates four independent 24-bit sigma-delta ADCs with differential inputs and programmable gain, ensuring accurate measurement of multiple phases. It also includes a 10-bit SAR ADC with six external and two internal channels, facilitating additional analog measurements. For digital signal processing, the microcontroller incorporates a three-channel DMA controller, enhancing data throughput. Security features are provided by an integrated hardware AES-128 module, supporting encryption requirements. Communication interfaces such as UART, SPI, and I²C are available through six enhanced universal serial communication interfaces (eUSCIs), enabling versatile connectivity options. An LCD driver supports up to 320 segments, suitable for display applications. Operating over a temperature range of -40°C to 85°C, the MSP430F6748AIPZR is housed in a 100-pin LQFP package, offering 62 I/O pins for flexible system design. ​
MSP430F6748AIPZR

Description: ​The MSP430F6748AIPZR is a 16-bit microcontroller from Texas Instruments, optimized for ...
Package: T&R | MOQ: 1000 | MPQ: 1000

STM32L073RZT6TR / ​The STM32L073RZT6TR is an ultra-low-power microcontroller from STMicroelectronics, featuring an Arm Cortex-M0+ core operating up to 32 MHz. It offers a 1.8 V to 3.6 V operating voltage range, suitable for battery-powered applications. The device is equipped with 192 KB of Flash memory, 20 KB of SRAM, and 6 KB of EEPROM, providing ample storage for code and data. For analog functionalities, it includes a 12-bit ADC with hardware oversampling, two DACs, and two ultra-low-power comparators. Its rich set of peripherals comprises multiple timers, communication interfaces such as I2C, SPI, UART, USB, and up to 24 capacitive sensing channels for touch applications. The STM32L073RZT6TR also integrates an LCD controller capable of driving up to eight multiplexed LCDs. It operates over a temperature range of -40°C to 85°C, making it suitable for various environmental conditions. ​
STM32L073RZT6TR

Description: ​The STM32L073RZT6TR is an ultra-low-power microcontroller from STMicroelectronics, feat ...
Package: T&R | MOQ: 1000 | MPQ: 1000

TSS521D / ​The TSS521D is a single-chip transceiver developed by Texas Instruments for Meter-Bus (M-Bus) standard applications, specifically designed for slave devices in metering systems. It operates with a supply voltage ranging from 3.1 V to 3.4 V and features a receiver with dynamic level recognition, ensuring reliable data communication. The transmitter offers a programmable constant-current sink, adjustable via an external resistor, providing flexibility in data transmission characteristics. Additionally, the TSS521D includes a 3.3-V voltage regulator with a power-fail function, facilitating seamless transitions between bus and battery power sources. The device is housed in a 16-pin SOIC package and operates over a temperature range of -25°C to 85°C, making it suitable for various metering applications. ​
TSS521D

Description: ​The TSS521D is a single-chip transceiver developed by Texas Instruments for Meter-Bus ( ...
Package: TUBE | MOQ: 800 | MPQ: 40

W25Q80DLSNIG / ​The W25Q80DLSNIG is an 8-megabit (Mb) NOR flash memory device from Winbond Electronics, designed for high-speed and reliable data storage in various applications. It operates over a supply voltage range of 2.3 V to 3.6 V, making it suitable for systems with varying power requirements. The device features a memory organization of 1 megabit x 8 bits and supports a high-speed SPI interface with Quad I/O capability, enabling data transfer rates up to 80 MHz. It offers fast access times, with a maximum of 6 ns, ensuring quick data retrieval. The W25Q80DLSNIG is housed in an 8-pin SOIC package (0.154
W25Q80DLSNIG

Description: ​The W25Q80DLSNIG is an 8-megabit (Mb) NOR flash memory device from Winbond Electronics, ...
Package: TUBE | MOQ: 1000 | MPQ: 100

VIPER06LSTR / ​The VIPER06LSTR is an offline converter from STMicroelectronics VIPerPlus family, designed for energy-efficient power conversion in applications such as home appliances, power metering, and LED drivers. It features an 800 V avalanche-rugged power section, enabling direct powering from rectified mains without the need for an auxiliary bias winding. The device operates with a fixed frequency of approximately 60 kHz, utilizing pulse-width modulation (PWM) with frequency jittering to minimize electromagnetic interference (EMI). Additional features include adjustable overcurrent limiting, on-board soft-start, safe auto-restart after fault conditions, and hysteretic thermal shutdown. The VIPER06LSTR is housed in a compact 10-pin SSOP package, suitable for space-constrained designs. ​
VIPER06LSTR

Description: ​The VIPER06LSTR is an offline converter from STMicroelectronics VIPerPlus family, desig ...
Package: T&R | MOQ: 2500 | MPQ: 2500

MSP430F447IPZR / ​The MSP430F447IPZR is a 16-bit ultra-low-power microcontroller from Texas Instruments, designed for applications requiring integrated mixed-signal processing and extensive peripheral support. It operates with a supply voltage ranging from 1.8 V to 3.6 V, balancing performance and power efficiency. The microcontroller features a 12-bit analog-to-digital converter (ADC) with eight channels, enabling precise analog signal acquisition. Additionally, it includes a comparator for analog signal comparison and an integrated LCD driver capable of supporting up to 160 segments, facilitating direct connection to LCD panels. Communication interfaces such as SPI and UART are also incorporated, enhancing connectivity options. The MSP430F447IPZR is housed in a 100-pin LQFP package, making it suitable for complex applications requiring a high pin count. ​
MSP430F447IPZR

Description: ​The MSP430F447IPZR is a 16-bit ultra-low-power microcontroller from Texas Instruments, ...
Package: T&R | MOQ: 1000 | MPQ: 1000

TPS70933DBVR / ​The TPS70933DBVR is a 3.3 V low-dropout (LDO) linear voltage regulator from Texas Instruments, designed for applications requiring low quiescent current and robust performance. It supports an input voltage range from 2.7 V to 30 V and provides a fixed output voltage of 3.3 V with a maximum output current of 150 mA. The device features an ultra-low quiescent current of typically 1 µA, making it ideal for battery-powered and energy-sensitive applications. It offers a low dropout voltage of approximately 1 V at 100 mA load current, ensuring efficient operation even with minimal headroom. The TPS70933DBVR includes an active high enable pin (EN) with a maximum input voltage of 6.5 V; when left floating or pulled high, the regulator is enabled, and when pulled low, it is disabled. Additionally, the device provides reverse current protection, safeguarding the regulator and system from potential damage due to reverse current flow. It is available in a 5-pin SOT-23 (DBV) package, offering a compact solution for space-constrained designs. ​
TPS70933DBVR

Description: ​The TPS70933DBVR is a 3.3 V low-dropout (LDO) linear voltage regulator from Texas Ins ...
Package: T&R | MOQ: 3000 | MPQ: 3000

TPS3851G33EDRBR / ​The TPS3851G33EDRBR is a precision voltage supervisor with an integrated watchdog timer, designed to monitor system voltages and ensure reliable operation. It operates over an input voltage range of 1.6 V to 6.5 V and features a fixed undervoltage threshold of 3.3 V with a high accuracy of ±0.8% across a temperature range of –40°C to +125°C. The device consumes a low quiescent current of typically 10 µA, making it suitable for power-sensitive applications. The TPS3851G33EDRBR provides an open-drain, active-low reset output with a minimum reset timeout of 170 ms, ensuring proper system reset sequencing. Additionally, it includes a programmable watchdog timer, configurable via an external capacitor or factory-programmed default settings, allowing for flexible system monitoring. The watchdog function can be disabled through logic pins to prevent undesired timeouts during development. The device is available in a compact 3 mm × 3 mm, 8-pin VSON package, facilitating integration into space-constrained designs. ​
TPS3851G33EDRBR

Description: ​The TPS3851G33EDRBR is a precision voltage supervisor with an integrated watchdog timer ...
Package: T&R | MOQ: 3000 | MPQ: 3000

AT45DB321E-SHF-T / ​The AT45DB321E-SHF-T is a 32-megabit (Mb) serial flash memory device from Renesas Electronics, designed for efficient data storage in various applications. It operates with a single supply voltage ranging from 2.3 V to 3.6 V, making it suitable for low-power systems. The device supports the Serial Peripheral Interface (SPI) and is compatible with SPI modes 0 and 3, allowing for flexible communication with microcontrollers and other peripherals. It offers a maximum clock frequency of 85 MHz, enabling high-speed data transfer. The memory is organized into 8,192 pages of either 512 or 528 bytes each, with user-configurable page size options. Additionally, it features two independent SRAM data buffers of the same size, facilitating efficient data management. The AT45DB321E-SHF-T provides various programming and erase options, including byte/page programming, page erase, block erase (4 KB), sector erase (64 KB), and chip erase (32 Mb). It also includes advanced hardware and software data protection features, such as individual sector protection and a 128-byte One-Time Programmable (OTP) security register. The device exhibits low power consumption, with typical active read current at 7 mA, standby current at 25 µA, deep power-down current at 3 µA, and ultra-deep power-down current at 400 nA. It is housed in an 8-lead SOIC package and operates over a temperature range of -40°C to 85°C, ensuring reliability in various environmental conditions. ​
AT45DB321E-SHF-T

Description: ​The AT45DB321E-SHF-T is a 32-megabit (Mb) serial flash memory device from Renesas Elect ...
Package: T&R | MOQ: 2000 | MPQ: 2000

BQ25173DSGR / ​The BQ25173DSGR is an integrated 800-mA linear charger designed for 1- to 4-cell supercapacitor applications. It operates with an input voltage range of 3.0 V to 18 V, accommodating various power sources. The device features a single power output for charging the supercapacitor, and the system load can be connected in parallel, allowing the charge current to be shared between the system and the supercapacitor. An internal control loop monitors the junction temperature and reduces the charge current if the internal temperature exceeds a certain threshold, enabling fast charging of a fully discharged supercapacitor. The BQ25173DSGR is suitable for space-limited applications such as portable medical equipment and dashboard cameras. ​
BQ25173DSGR

Description: ​The BQ25173DSGR is an integrated 800-mA linear charger designed for 1- to 4-cell superc ...
Package: T&R | MOQ: 3000 | MPQ: 3000

MSP430FR6928IPMR / ​The MSP430FR6928IPMR is a 16-bit microcontroller from Texas Instruments, designed for ultra-low-power applications. It operates within a supply voltage range of 1.8 V to 3.6 V. In active mode, it consumes approximately 100 µA/MHz, and in standby mode (LPM3 with VLO), the typical current consumption is 0.4 µA. The device features 96 KB of nonvolatile FRAM and 2 KB of SRAM. It includes a 12-bit analog-to-digital converter (ADC) with up to 16 external input channels, a 16-channel analog comparator, and an integrated LCD driver supporting up to 320 segments. Communication interfaces comprise UART, SPI, and I²C. The microcontroller also incorporates a 32-bit hardware multiplier, three-channel direct memory access (DMA), and five 16-bit timers with up to seven capture/compare registers each. Security features include a 128-bit or 256-bit AES encryption and decryption coprocessor. The device is housed in a 64-pin LQFP package and operates over a temperature range of -40°C to 85°C. ​
MSP430FR6928IPMR

Description: ​The MSP430FR6928IPMR is a 16-bit microcontroller from Texas Instruments, designed for u ...
Package: T&R | MOQ: 1000 | MPQ: 1000

TXS0108EPWR / ​The TXS0108EPWR is an 8-bit bidirectional voltage-level translator designed to facilitate seamless communication between devices operating at different voltage levels. It features two configurable power-supply rails: the A port operates with voltages ranging from 1.4 V to 3.6 V, while the B port accommodates voltages between 1.65 V and 5.5 V, allowing for flexible interfacing across various logic levels. The device supports high-speed data rates up to 110 Mbps for push-pull applications and up to 1.2 Mbps for open-drain applications. Notably, it does not require a direction-control signal, simplifying design implementation. The TXS0108EPWR includes an output-enable (OE) input; when driven low, all outputs are placed in a high-impedance state, effectively disconnecting the buses. Additionally, it offers robust electrostatic discharge (ESD) protection, with ratings of ±2 kV for the Human Body Model on the A port and up to ±8 kV contact discharge per IEC 61000-4-2 on the B port. These features make the TXS0108EPWR suitable for applications such as handsets, smartphones, tablets, and desktop PCs. ​
TXS0108EPWR

Description: ​The TXS0108EPWR is an 8-bit bidirectional voltage-level translator designed to facilita ...
Package: T&R | MOQ: 2000 | MPQ: 2000

iW1821-00 / ​The IW1821-00 is a 12W AccuSwitch™ quasi-resonant pulse-width modulation (PWM) controller with an integrated 1200V bipolar junction transistor (BJT), designed for compact AC/DC flyback power supplies. Operating in quasi-resonant mode, it enhances efficiency and reduces electromagnetic interference (EMI). The device features a distinctive soft-start mechanism for smooth startup with various capacitive loads. Its digital control technology eliminates the need for secondary feedback circuits, achieving excellent line and load regulation. The IW1821-00 integrates multiple protection features, including overvoltage, overcurrent, and thermal protection, ensuring robust and reliable operation in industrial applications. ​
iW1821-00

Description: ​The IW1821-00 is a 12W AccuSwitch™ quasi-resonant pulse-width modulation (PWM) contro ...
Package: T&R | MOQ: 2500 | MPQ: 2500

CP2102N-A02-GQFN28R / The CP2102N-A02-GQFN28 is a highly integrated USB-to-UART bridge controller designed to provide seamless USB connectivity for embedded systems. It operates with a supply voltage range of 3.0 V to 3.6 V and supports USB 2.0 full-speed communication. The device integrates a USB transceiver, clock, EEPROM, and voltage regulator, eliminating the need for most external components. It supports UART baud rates up to 3 Mbps and includes multiple GPIO pins for additional control and configuration. The CP2102N offers low power consumption, high reliability, and built-in driver support for major operating systems such as Windows, Linux, and macOS. It is widely used in USB-to-serial adapters, microcontroller programming, industrial communication, and IoT applications.
CP2102N-A02-GQFN28R

Description: The CP2102N-A02-GQFN28 is a highly integrated USB-to-UART bridge controller designed to pr ...
Package: T&R | MOQ: 1500 | MPQ: 1500

TPS2121RUXR / ​The TPS2121RUXR is a dual-input, single-output (DISO) power multiplexer designed to seamlessly transition between two power sources, ensuring uninterrupted power to the load. It operates over a wide input voltage range of 2.7 V to 22 V, with an absolute maximum input voltage of 24 V. The device features a low typical on-resistance (R_ON) of 56 mΩ, facilitating efficient power delivery. It supports an adjustable output current limit ranging from 1 A to 4.5 A, configurable via an external resistor. The TPS2121RUXR offers a fast switchover time of approximately 5 µs, minimizing voltage drop during source transitions. Additional features include adjustable overvoltage protection, priority input selection, channel status indication, and adjustable soft-start times. The device is housed in a 12-pin VQFN-HR package and operates within a temperature range of -40°C to 125°C, making it suitable for various applications requiring reliable power management. ​
TPS2121RUXR

Description: ​The TPS2121RUXR is a dual-input, single-output (DISO) power multiplexer designed to sea ...
Package: T&R | MOQ: 3000 | MPQ: 3000

TPL5110QDDCRQ1 / ​The TPL5110QDDCRQ1 is an automotive-grade, nano-power system timer with an integrated MOSFET driver, designed for power-gating applications. It operates within a supply voltage range of 1.8V to 5.5V and consumes a typical current of 35 nA at 2.5V, making it highly energy-efficient. The device offers selectable timing intervals from 100 milliseconds to 7200 seconds, with a typical timer accuracy of 1%. It features a resistor-selectable time interval, manual MOSFET power-on capability, and a unique one-shot function where the timer powers the MOSFET for a single cycle. Qualified for automotive applications, the TPL5110QDDCRQ1 meets AEC-Q100 standards, operating over a temperature range of -40°C to 125°C. It is available in a compact 6-pin SOT-23 package. ​
TPL5110QDDCRQ1

Description: ​The TPL5110QDDCRQ1 is an automotive-grade, nano-power system timer with an integrated M ...
Package: T&R | MOQ: 3000 | MPQ: 3000

MT47H64M16NF-25E:M / ​The MT47H64M16NF-25E:M is a DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module from Micron Technology Inc., offering a storage capacity of 1 gigabit (Gb). It is organized as 64 million words by 16 bits (64M x 16), providing a 16-bit data bus width. This module operates with a supply voltage of 1.8V ±0.1V and features an access time of 400 picoseconds, ensuring efficient data retrieval. It supports a maximum clock frequency of 400 MHz, corresponding to a data transfer rate of 800 megabits per second per pin. The write cycle time for both word and page operations is 15 nanoseconds. Housed in an 84-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 8 x 12.5 mm, the module is suitable for surface-mount applications. It is rated for an operating temperature range of -40°C to 105°C, making it suitable for industrial applications. Key features include programmable CAS latency (CL) of 3, 4, or 5, selectable burst lengths of 4 or 8, on-die termination (ODT), and compliance with JEDEC clock jitter specifications. ​
MT47H64M16NF-25E:M

Description: ​The MT47H64M16NF-25E:M is a DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) modul ...
Package: TRAY | MOQ: 1368 | MPQ: 1368

MT47H64M16NF-25E IT:M / ​The MT47H64M16NF-25E IT:M is a DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module produced by Micron Technology Inc., offering a storage capacity of 1 gigabit (Gb). It is organized as 64 million words by 16 bits (64M x 16), providing a 16-bit data bus width. The module operates with a supply voltage between 1.7V and 1.9V and features an access time of 400 picoseconds, ensuring efficient data retrieval. It supports a maximum clock frequency of 400 MHz, corresponding to a data transfer rate of 800 megabits per second per pin. The write cycle time for both word and page operations is 15 nanoseconds. Housed in an 84-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 8 x 12.5 mm, the module is suitable for surface-mount applications. It is rated for an operating temperature range of -40°C to 95°C, making it suitable for automotive applications. The TR suffix indicates that the module is supplied in tape and reel packaging, facilitating automated assembly processes. ​
MT47H64M16NF-25E IT:M

Description: ​The MT47H64M16NF-25E IT:M is a DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) mo ...
Package: TRAY | MOQ: 1368 | MPQ: 1368

MT47H64M16NF-25E AIT:M / ​The MT47H64M16NF-25E AIT:M is a DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module manufactured by Micron Technology Inc. It offers a storage capacity of 1 gigabit (Gb), organized as 64 million words by 16 bits (64M x 16), providing a 16-bit data bus width. This module operates with a supply voltage between 1.7V and 1.9V and features an access time of 400 picoseconds, ensuring efficient data retrieval. It supports a maximum clock frequency of 400 MHz, corresponding to a data transfer rate of 800 megabits per second per pin. The write cycle time for both word and page operations is 15 nanoseconds. Housed in an 84-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 8 x 12.5 mm, the module is suitable for surface-mount applications. It is rated for an operating temperature range of -40°C to 95°C, making it suitable for automotive applications. The TR suffix indicates that the module is supplied in tape and reel packaging, facilitating automated assembly processes. ​
MT47H64M16NF-25E AIT:M

Description: ​The MT47H64M16NF-25E AIT:M is a DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) m ...
Package: T&R | MOQ: 1368 | MPQ: 1368

MT47H64M16NF-25E AAT:M / ​The MT47H64M16NF-25E AAT:M is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module produced by Micron Technology Inc. It is organized as 64 million words by 16 bits (64M x 16), providing a data bus width of 16 bits. The module operates with a supply voltage between 1.7V and 1.9V and offers an access time of 400 picoseconds, ensuring rapid data retrieval. It supports a maximum clock frequency of 400 MHz, corresponding to a data transfer rate of 800 megabits per second per pin. The write cycle time for both word and page operations is 15 nanoseconds. Housed in an 84-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 8 x 12.5 mm, the module is suitable for surface-mount applications. It is rated for an operating temperature range of -40°C to 105°C, making it suitable for automotive applications. The TR suffix indicates that the module is supplied in tape and reel packaging, facilitating automated assembly processes. ​
MT47H64M16NF-25E AAT:M

Description: ​The MT47H64M16NF-25E AAT:M is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access M ...
Package: TRAY | MOQ: 1368 | MPQ: 1368

MT47H64M16HR-3:H TR / ​The MT47H64M16HR-3:H TR is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module manufactured by Micron Technology Inc. It is organized as 64 million words by 16 bits (64M x 16), providing a data bus width of 16 bits. The module operates with a supply voltage between 1.7V and 1.9V and features an access time of 450 picoseconds, ensuring rapid data retrieval. It supports a maximum clock frequency of 333 MHz, corresponding to a data transfer rate of 666 megabits per second per pin. The write cycle time for both word and page operations is 15 nanoseconds. Housed in an 84-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 8 x 12.5 mm, the module is suitable for surface-mount applications. It is rated for an operating temperature range of 0°C to 85°C, making it suitable for commercial applications. The TR suffix indicates that the module is supplied in tape and reel packaging, facilitating automated assembly processes. ​
MT47H64M16HR-3:H TR

Description: ​The MT47H64M16HR-3:H TR is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memo ...
Package: T&R | MOQ: 2000 | MPQ: 2000

IS46DR16640C-3DBLA1-TR / ​The IS46DR16640C-3DBLA1-TR is a 1-gigabit DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module produced by Integrated Silicon Solution Inc. (ISSI). It features a 64M x 16-bit organization, operating at a clock frequency of up to 333 MHz, which corresponds to a data transfer rate of 666 megabits per second per pin. The module requires a supply voltage between 1.7V and 1.9V and offers an access time of 450 picoseconds. It is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8mm x 12.5mm and is rated for an operating temperature range of -40°C to +95°C, making it suitable for automotive applications. The TR suffix indicates that the module is supplied in tape and reel packaging, ideal for automated assembly processes.​
IS46DR16640C-3DBLA1-TR

Description: ​The IS46DR16640C-3DBLA1-TR is a 1-gigabit DDR2 Synchronous Dynamic Random-Access Memory ...
Package: T&R | MOQ: 2500 | MPQ: 2500

IS46DR16640C-25DBLA2-TR / ​The IS46DR16640C-25DBLA2-TR is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at a clock frequency of up to 400 MHz, delivering data transfer rates up to 800 megabits per second per pin. The device requires a supply voltage between 1.7V and 1.9V and offers an access time of 400 picoseconds. It features a 4-bit prefetch architecture and supports a write cycle time of 15 nanoseconds. The SDRAM includes eight internal banks for concurrent operations and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features include on-die termination (ODT), automatic and controlled precharge commands, auto-refresh and self-refresh modes, and a refresh interval of 7.8 µs. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within an industrial temperature range of -40°C to 105°C, making it suitable for various applications requiring high-speed and reliable memory solutions. ​
IS46DR16640C-25DBLA2-TR

Description: ​The IS46DR16640C-25DBLA2-TR is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access ...
Package: T&R | MOQ: 2500 | MPQ: 2500

IS46DR16640C-25DBLA2 / ​The IS46DR16640C-25DBLA2 is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at a clock frequency of up to 400 MHz, delivering data transfer rates up to 800 megabits per second per pin. The device requires a supply voltage between 1.7V and 1.9V and offers an access time of 400 picoseconds. It features a 4-bit prefetch architecture and supports a write cycle time of 15 nanoseconds. The SDRAM includes eight internal banks for concurrent operations and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features include on-die termination (ODT), automatic and controlled precharge commands, auto-refresh and self-refresh modes, and a refresh interval of 7.8 µs. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within an industrial temperature range of -40°C to 105°C, making it suitable for various applications requiring high-speed and reliable memory solutions. ​
IS46DR16640C-25DBLA2

Description: ​The IS46DR16640C-25DBLA2 is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Mem ...
Package: TRAY | MOQ: 418 | MPQ: 209

IS46DR16640B-25EBLA1 / ​The IS46DR16640B-25EBLA1 is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at clock frequencies up to 400 MHz, delivering data transfer rates up to 800 megabits per second per pin. The device requires a supply voltage between 1.7V and 1.9V and offers an access time of 400 picoseconds. It features a 4-bit prefetch architecture and supports programmable CAS latencies of 3, 4, 5, 6, and 7, along with programmable additive latencies from 0 to 6. The SDRAM includes eight internal banks for concurrent operations and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features include on-die termination (ODT), automatic and controlled precharge commands, auto-refresh and self-refresh modes, and a refresh interval of 7.8 µs. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within an industrial temperature range of -40°C to 85°C, making it suitable for various applications requiring high-speed and reliable memory solutions. ​
IS46DR16640B-25EBLA1

Description: ​The IS46DR16640B-25EBLA1 is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Mem ...
Package: TRAY | MOQ: 418 | MPQ: 209

IS43DR16640C-25DBLI / ​The IS43DR16640C-25DBLI is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at a clock frequency of up to 400 MHz, delivering data transfer rates up to 800 megabits per second per pin. The device requires a supply voltage between 1.7V and 1.9V and offers an access time of 400 picoseconds. It features a 4-bit prefetch architecture and supports a write cycle time of 15 nanoseconds. The SDRAM includes eight internal banks for concurrent operations and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features include on-die termination (ODT), automatic and controlled precharge commands, auto-refresh and self-refresh modes, and a refresh interval of 7.8 µs. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within an industrial temperature range of -40°C to 85°C, making it suitable for various applications requiring high-speed and reliable memory solutions. ​
IS43DR16640C-25DBLI

Description: ​The IS43DR16640C-25DBLI is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memo ...
Package: TRAY | MOQ: 418 | MPQ: 209

IS43DR16640C-25DBL / ​The IS43DR16640C-25DBL is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at a clock frequency of up to 400 MHz, delivering data transfer rates up to 800 megabits per second per pin. The device requires a supply voltage between 1.7V and 1.9V and offers an access time of 400 picoseconds. It features a 4-bit prefetch architecture and supports a write cycle time of 15 nanoseconds. The SDRAM includes eight internal banks for concurrent operations and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features include on-die termination (ODT), automatic and controlled precharge commands, auto-refresh and self-refresh modes, and a refresh interval of 7.8 µs. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within a temperature range of 0°C to 85°C, making it suitable for various applications requiring high-speed and reliable memory solutions. ​
IS43DR16640C-25DBL

Description: ​The IS43DR16640C-25DBL is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memor ...
Package: TRAY | MOQ: 418 | MPQ: 209

IS43DR16640B-25EBL / The IS43DR16640B-25EBL is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at clock frequencies up to 400 MHz, achieving data transfer rates up to 800 megabits per second per pin. The device functions within a supply voltage range of 1.7V to 1.9V and offers an access time of 450 picoseconds. It features a 4-bit prefetch architecture and supports programmable CAS latencies of 3, 4, 5, 6, and 7, along with programmable additive latencies from 0 to 6. The SDRAM includes eight internal banks for concurrent operation and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features include on-die termination (ODT), automatic and controlled precharge commands, auto-refresh and self-refresh modes, and a refresh interval of 7.8 µs. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within an industrial temperature range of 0°C to 70°C, making it suitable for various applications requiring high-speed and reliable memory solutions. ​Alternative P/N: IS43DR16640B-25EBLI
IS43DR16640B-25EBL

Description: The IS43DR16640B-25EBL is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory ( ...
Package: TRAY | MOQ: 418 | MPQ: 209

IS43DR16640B-25DBLI / ​The IS43DR16640B-25DBLI is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at clock frequencies up to 400 MHz, delivering data transfer rates up to 800 megabits per second per pin. The device functions within a supply voltage range of 1.7V to 1.9V and offers an access time of 400 picoseconds. It features a 4-bit prefetch architecture and supports programmable CAS latencies of 3, 4, 5, 6, and 7, along with programmable additive latencies from 0 to 6. The SDRAM includes eight internal banks for concurrent operation and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features comprise on-die termination (ODT), off-chip driver (OCD) impedance adjustment, and automatic and controlled precharge commands. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within a temperature range of -40°C to +85°C, making it suitable for various industrial applications requiring high-speed and reliable memory solutions. ​
IS43DR16640B-25DBLI

Description: ​The IS43DR16640B-25DBLI is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memo ...
Package: TRAY | MOQ: 418 | MPQ: 209













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