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STM32L073RZT6TR / ​The STM32L073RZT6TR is an ultra-low-power microcontroller from STMicroelectronics, featuring an Arm Cortex-M0+ core operating up to 32 MHz. It offers a 1.8 V to 3.6 V operating voltage range, suitable for battery-powered applications. The device is equipped with 192 KB of Flash memory, 20 KB of SRAM, and 6 KB of EEPROM, providing ample storage for code and data. For analog functionalities, it includes a 12-bit ADC with hardware oversampling, two DACs, and two ultra-low-power comparators. Its rich set of peripherals comprises multiple timers, communication interfaces such as I2C, SPI, UART, USB, and up to 24 capacitive sensing channels for touch applications. The STM32L073RZT6TR also integrates an LCD controller capable of driving up to eight multiplexed LCDs. It operates over a temperature range of -40°C to 85°C, making it suitable for various environmental conditions. ​
STM32L073RZT6TR

Description: ​The STM32L073RZT6TR is an ultra-low-power microcontroller from STMicroelectronics, feat ...
Package: T&R | MOQ: 1000 | MPQ: 1000

TSS521D / ​The TSS521D is a single-chip transceiver developed by Texas Instruments for Meter-Bus (M-Bus) standard applications, specifically designed for slave devices in metering systems. It operates with a supply voltage ranging from 3.1 V to 3.4 V and features a receiver with dynamic level recognition, ensuring reliable data communication. The transmitter offers a programmable constant-current sink, adjustable via an external resistor, providing flexibility in data transmission characteristics. Additionally, the TSS521D includes a 3.3-V voltage regulator with a power-fail function, facilitating seamless transitions between bus and battery power sources. The device is housed in a 16-pin SOIC package and operates over a temperature range of -25°C to 85°C, making it suitable for various metering applications. ​
TSS521D

Description: ​The TSS521D is a single-chip transceiver developed by Texas Instruments for Meter-Bus ( ...
Package: TUBE | MOQ: 800 | MPQ: 40

W25Q80DLSNIG / ​The W25Q80DLSNIG is an 8-megabit (Mb) NOR flash memory device from Winbond Electronics, designed for high-speed and reliable data storage in various applications. It operates over a supply voltage range of 2.3 V to 3.6 V, making it suitable for systems with varying power requirements. The device features a memory organization of 1 megabit x 8 bits and supports a high-speed SPI interface with Quad I/O capability, enabling data transfer rates up to 80 MHz. It offers fast access times, with a maximum of 6 ns, ensuring quick data retrieval. The W25Q80DLSNIG is housed in an 8-pin SOIC package (0.154
W25Q80DLSNIG

Description: ​The W25Q80DLSNIG is an 8-megabit (Mb) NOR flash memory device from Winbond Electronics, ...
Package: TUBE | MOQ: 1000 | MPQ: 100

VIPER06LSTR / ​The VIPER06LSTR is an offline converter from STMicroelectronics VIPerPlus family, designed for energy-efficient power conversion in applications such as home appliances, power metering, and LED drivers. It features an 800 V avalanche-rugged power section, enabling direct powering from rectified mains without the need for an auxiliary bias winding. The device operates with a fixed frequency of approximately 60 kHz, utilizing pulse-width modulation (PWM) with frequency jittering to minimize electromagnetic interference (EMI). Additional features include adjustable overcurrent limiting, on-board soft-start, safe auto-restart after fault conditions, and hysteretic thermal shutdown. The VIPER06LSTR is housed in a compact 10-pin SSOP package, suitable for space-constrained designs. ​
VIPER06LSTR

Description: ​The VIPER06LSTR is an offline converter from STMicroelectronics VIPerPlus family, desig ...
Package: T&R | MOQ: 2500 | MPQ: 2500

MSP430F447IPZR / ​The MSP430F447IPZR is a 16-bit ultra-low-power microcontroller from Texas Instruments, designed for applications requiring integrated mixed-signal processing and extensive peripheral support. It operates with a supply voltage ranging from 1.8 V to 3.6 V, balancing performance and power efficiency. The microcontroller features a 12-bit analog-to-digital converter (ADC) with eight channels, enabling precise analog signal acquisition. Additionally, it includes a comparator for analog signal comparison and an integrated LCD driver capable of supporting up to 160 segments, facilitating direct connection to LCD panels. Communication interfaces such as SPI and UART are also incorporated, enhancing connectivity options. The MSP430F447IPZR is housed in a 100-pin LQFP package, making it suitable for complex applications requiring a high pin count. ​
MSP430F447IPZR

Description: ​The MSP430F447IPZR is a 16-bit ultra-low-power microcontroller from Texas Instruments, ...
Package: T&R | MOQ: 1000 | MPQ: 1000

TPS70933DBVR / ​The TPS70933DBVR is a 3.3 V low-dropout (LDO) linear voltage regulator from Texas Instruments, designed for applications requiring low quiescent current and robust performance. It supports an input voltage range from 2.7 V to 30 V and provides a fixed output voltage of 3.3 V with a maximum output current of 150 mA. The device features an ultra-low quiescent current of typically 1 µA, making it ideal for battery-powered and energy-sensitive applications. It offers a low dropout voltage of approximately 1 V at 100 mA load current, ensuring efficient operation even with minimal headroom. The TPS70933DBVR includes an active high enable pin (EN) with a maximum input voltage of 6.5 V; when left floating or pulled high, the regulator is enabled, and when pulled low, it is disabled. Additionally, the device provides reverse current protection, safeguarding the regulator and system from potential damage due to reverse current flow. It is available in a 5-pin SOT-23 (DBV) package, offering a compact solution for space-constrained designs. ​
TPS70933DBVR

Description: ​The TPS70933DBVR is a 3.3 V low-dropout (LDO) linear voltage regulator from Texas Ins ...
Package: T&R | MOQ: 3000 | MPQ: 3000

TPS3851G33EDRBR / ​The TPS3851G33EDRBR is a precision voltage supervisor with an integrated watchdog timer, designed to monitor system voltages and ensure reliable operation. It operates over an input voltage range of 1.6 V to 6.5 V and features a fixed undervoltage threshold of 3.3 V with a high accuracy of ±0.8% across a temperature range of –40°C to +125°C. The device consumes a low quiescent current of typically 10 µA, making it suitable for power-sensitive applications. The TPS3851G33EDRBR provides an open-drain, active-low reset output with a minimum reset timeout of 170 ms, ensuring proper system reset sequencing. Additionally, it includes a programmable watchdog timer, configurable via an external capacitor or factory-programmed default settings, allowing for flexible system monitoring. The watchdog function can be disabled through logic pins to prevent undesired timeouts during development. The device is available in a compact 3 mm × 3 mm, 8-pin VSON package, facilitating integration into space-constrained designs. ​
TPS3851G33EDRBR

Description: ​The TPS3851G33EDRBR is a precision voltage supervisor with an integrated watchdog timer ...
Package: T&R | MOQ: 3000 | MPQ: 3000

AT45DB321E-SHF-T / ​The AT45DB321E-SHF-T is a 32-megabit (Mb) serial flash memory device from Renesas Electronics, designed for efficient data storage in various applications. It operates with a single supply voltage ranging from 2.3 V to 3.6 V, making it suitable for low-power systems. The device supports the Serial Peripheral Interface (SPI) and is compatible with SPI modes 0 and 3, allowing for flexible communication with microcontrollers and other peripherals. It offers a maximum clock frequency of 85 MHz, enabling high-speed data transfer. The memory is organized into 8,192 pages of either 512 or 528 bytes each, with user-configurable page size options. Additionally, it features two independent SRAM data buffers of the same size, facilitating efficient data management. The AT45DB321E-SHF-T provides various programming and erase options, including byte/page programming, page erase, block erase (4 KB), sector erase (64 KB), and chip erase (32 Mb). It also includes advanced hardware and software data protection features, such as individual sector protection and a 128-byte One-Time Programmable (OTP) security register. The device exhibits low power consumption, with typical active read current at 7 mA, standby current at 25 µA, deep power-down current at 3 µA, and ultra-deep power-down current at 400 nA. It is housed in an 8-lead SOIC package and operates over a temperature range of -40°C to 85°C, ensuring reliability in various environmental conditions. ​
AT45DB321E-SHF-T

Description: ​The AT45DB321E-SHF-T is a 32-megabit (Mb) serial flash memory device from Renesas Elect ...
Package: T&R | MOQ: 2000 | MPQ: 2000

BQ25173DSGR / ​The BQ25173DSGR is an integrated 800-mA linear charger designed for 1- to 4-cell supercapacitor applications. It operates with an input voltage range of 3.0 V to 18 V, accommodating various power sources. The device features a single power output for charging the supercapacitor, and the system load can be connected in parallel, allowing the charge current to be shared between the system and the supercapacitor. An internal control loop monitors the junction temperature and reduces the charge current if the internal temperature exceeds a certain threshold, enabling fast charging of a fully discharged supercapacitor. The BQ25173DSGR is suitable for space-limited applications such as portable medical equipment and dashboard cameras. ​
BQ25173DSGR

Description: ​The BQ25173DSGR is an integrated 800-mA linear charger designed for 1- to 4-cell superc ...
Package: T&R | MOQ: 3000 | MPQ: 3000

MSP430FR6928IPMR / ​The MSP430FR6928IPMR is a 16-bit microcontroller from Texas Instruments, designed for ultra-low-power applications. It operates within a supply voltage range of 1.8 V to 3.6 V. In active mode, it consumes approximately 100 µA/MHz, and in standby mode (LPM3 with VLO), the typical current consumption is 0.4 µA. The device features 96 KB of nonvolatile FRAM and 2 KB of SRAM. It includes a 12-bit analog-to-digital converter (ADC) with up to 16 external input channels, a 16-channel analog comparator, and an integrated LCD driver supporting up to 320 segments. Communication interfaces comprise UART, SPI, and I²C. The microcontroller also incorporates a 32-bit hardware multiplier, three-channel direct memory access (DMA), and five 16-bit timers with up to seven capture/compare registers each. Security features include a 128-bit or 256-bit AES encryption and decryption coprocessor. The device is housed in a 64-pin LQFP package and operates over a temperature range of -40°C to 85°C. ​
MSP430FR6928IPMR

Description: ​The MSP430FR6928IPMR is a 16-bit microcontroller from Texas Instruments, designed for u ...
Package: T&R | MOQ: 1000 | MPQ: 1000

TXS0108EPWR / ​The TXS0108EPWR is an 8-bit bidirectional voltage-level translator designed to facilitate seamless communication between devices operating at different voltage levels. It features two configurable power-supply rails: the A port operates with voltages ranging from 1.4 V to 3.6 V, while the B port accommodates voltages between 1.65 V and 5.5 V, allowing for flexible interfacing across various logic levels. The device supports high-speed data rates up to 110 Mbps for push-pull applications and up to 1.2 Mbps for open-drain applications. Notably, it does not require a direction-control signal, simplifying design implementation. The TXS0108EPWR includes an output-enable (OE) input; when driven low, all outputs are placed in a high-impedance state, effectively disconnecting the buses. Additionally, it offers robust electrostatic discharge (ESD) protection, with ratings of ±2 kV for the Human Body Model on the A port and up to ±8 kV contact discharge per IEC 61000-4-2 on the B port. These features make the TXS0108EPWR suitable for applications such as handsets, smartphones, tablets, and desktop PCs. ​
TXS0108EPWR

Description: ​The TXS0108EPWR is an 8-bit bidirectional voltage-level translator designed to facilita ...
Package: T&R | MOQ: 2000 | MPQ: 2000

iW1821-00 / ​The IW1821-00 is a 12W AccuSwitch™ quasi-resonant pulse-width modulation (PWM) controller with an integrated 1200V bipolar junction transistor (BJT), designed for compact AC/DC flyback power supplies. Operating in quasi-resonant mode, it enhances efficiency and reduces electromagnetic interference (EMI). The device features a distinctive soft-start mechanism for smooth startup with various capacitive loads. Its digital control technology eliminates the need for secondary feedback circuits, achieving excellent line and load regulation. The IW1821-00 integrates multiple protection features, including overvoltage, overcurrent, and thermal protection, ensuring robust and reliable operation in industrial applications. ​
iW1821-00

Description: ​The IW1821-00 is a 12W AccuSwitch™ quasi-resonant pulse-width modulation (PWM) contro ...
Package: T&R | MOQ: 2500 | MPQ: 2500

CP2102N-A02-GQFN28R / The CP2102N-A02-GQFN28 is a highly integrated USB-to-UART bridge controller designed to provide seamless USB connectivity for embedded systems. It operates with a supply voltage range of 3.0 V to 3.6 V and supports USB 2.0 full-speed communication. The device integrates a USB transceiver, clock, EEPROM, and voltage regulator, eliminating the need for most external components. It supports UART baud rates up to 3 Mbps and includes multiple GPIO pins for additional control and configuration. The CP2102N offers low power consumption, high reliability, and built-in driver support for major operating systems such as Windows, Linux, and macOS. It is widely used in USB-to-serial adapters, microcontroller programming, industrial communication, and IoT applications.
CP2102N-A02-GQFN28R

Description: The CP2102N-A02-GQFN28 is a highly integrated USB-to-UART bridge controller designed to pr ...
Package: T&R | MOQ: 1500 | MPQ: 1500

TPS2121RUXR / ​The TPS2121RUXR is a dual-input, single-output (DISO) power multiplexer designed to seamlessly transition between two power sources, ensuring uninterrupted power to the load. It operates over a wide input voltage range of 2.7 V to 22 V, with an absolute maximum input voltage of 24 V. The device features a low typical on-resistance (R_ON) of 56 mΩ, facilitating efficient power delivery. It supports an adjustable output current limit ranging from 1 A to 4.5 A, configurable via an external resistor. The TPS2121RUXR offers a fast switchover time of approximately 5 µs, minimizing voltage drop during source transitions. Additional features include adjustable overvoltage protection, priority input selection, channel status indication, and adjustable soft-start times. The device is housed in a 12-pin VQFN-HR package and operates within a temperature range of -40°C to 125°C, making it suitable for various applications requiring reliable power management. ​
TPS2121RUXR

Description: ​The TPS2121RUXR is a dual-input, single-output (DISO) power multiplexer designed to sea ...
Package: T&R | MOQ: 3000 | MPQ: 3000

TPL5110QDDCRQ1 / ​The TPL5110QDDCRQ1 is an automotive-grade, nano-power system timer with an integrated MOSFET driver, designed for power-gating applications. It operates within a supply voltage range of 1.8V to 5.5V and consumes a typical current of 35 nA at 2.5V, making it highly energy-efficient. The device offers selectable timing intervals from 100 milliseconds to 7200 seconds, with a typical timer accuracy of 1%. It features a resistor-selectable time interval, manual MOSFET power-on capability, and a unique one-shot function where the timer powers the MOSFET for a single cycle. Qualified for automotive applications, the TPL5110QDDCRQ1 meets AEC-Q100 standards, operating over a temperature range of -40°C to 125°C. It is available in a compact 6-pin SOT-23 package. ​
TPL5110QDDCRQ1

Description: ​The TPL5110QDDCRQ1 is an automotive-grade, nano-power system timer with an integrated M ...
Package: T&R | MOQ: 3000 | MPQ: 3000

MT47H64M16NF-25E:M / ​The MT47H64M16NF-25E:M is a DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module from Micron Technology Inc., offering a storage capacity of 1 gigabit (Gb). It is organized as 64 million words by 16 bits (64M x 16), providing a 16-bit data bus width. This module operates with a supply voltage of 1.8V ±0.1V and features an access time of 400 picoseconds, ensuring efficient data retrieval. It supports a maximum clock frequency of 400 MHz, corresponding to a data transfer rate of 800 megabits per second per pin. The write cycle time for both word and page operations is 15 nanoseconds. Housed in an 84-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 8 x 12.5 mm, the module is suitable for surface-mount applications. It is rated for an operating temperature range of -40°C to 105°C, making it suitable for industrial applications. Key features include programmable CAS latency (CL) of 3, 4, or 5, selectable burst lengths of 4 or 8, on-die termination (ODT), and compliance with JEDEC clock jitter specifications. ​
MT47H64M16NF-25E:M

Description: ​The MT47H64M16NF-25E:M is a DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) modul ...
Package: TRAY | MOQ: 1368 | MPQ: 1368

MT47H64M16NF-25E IT:M / ​The MT47H64M16NF-25E IT:M is a DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module produced by Micron Technology Inc., offering a storage capacity of 1 gigabit (Gb). It is organized as 64 million words by 16 bits (64M x 16), providing a 16-bit data bus width. The module operates with a supply voltage between 1.7V and 1.9V and features an access time of 400 picoseconds, ensuring efficient data retrieval. It supports a maximum clock frequency of 400 MHz, corresponding to a data transfer rate of 800 megabits per second per pin. The write cycle time for both word and page operations is 15 nanoseconds. Housed in an 84-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 8 x 12.5 mm, the module is suitable for surface-mount applications. It is rated for an operating temperature range of -40°C to 95°C, making it suitable for automotive applications. The TR suffix indicates that the module is supplied in tape and reel packaging, facilitating automated assembly processes. ​
MT47H64M16NF-25E IT:M

Description: ​The MT47H64M16NF-25E IT:M is a DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) mo ...
Package: TRAY | MOQ: 1368 | MPQ: 1368

MT47H64M16NF-25E AIT:M / ​The MT47H64M16NF-25E AIT:M is a DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module manufactured by Micron Technology Inc. It offers a storage capacity of 1 gigabit (Gb), organized as 64 million words by 16 bits (64M x 16), providing a 16-bit data bus width. This module operates with a supply voltage between 1.7V and 1.9V and features an access time of 400 picoseconds, ensuring efficient data retrieval. It supports a maximum clock frequency of 400 MHz, corresponding to a data transfer rate of 800 megabits per second per pin. The write cycle time for both word and page operations is 15 nanoseconds. Housed in an 84-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 8 x 12.5 mm, the module is suitable for surface-mount applications. It is rated for an operating temperature range of -40°C to 95°C, making it suitable for automotive applications. The TR suffix indicates that the module is supplied in tape and reel packaging, facilitating automated assembly processes. ​
MT47H64M16NF-25E AIT:M

Description: ​The MT47H64M16NF-25E AIT:M is a DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) m ...
Package: T&R | MOQ: 1368 | MPQ: 1368

MT47H64M16NF-25E AAT:M / ​The MT47H64M16NF-25E AAT:M is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module produced by Micron Technology Inc. It is organized as 64 million words by 16 bits (64M x 16), providing a data bus width of 16 bits. The module operates with a supply voltage between 1.7V and 1.9V and offers an access time of 400 picoseconds, ensuring rapid data retrieval. It supports a maximum clock frequency of 400 MHz, corresponding to a data transfer rate of 800 megabits per second per pin. The write cycle time for both word and page operations is 15 nanoseconds. Housed in an 84-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 8 x 12.5 mm, the module is suitable for surface-mount applications. It is rated for an operating temperature range of -40°C to 105°C, making it suitable for automotive applications. The TR suffix indicates that the module is supplied in tape and reel packaging, facilitating automated assembly processes. ​
MT47H64M16NF-25E AAT:M

Description: ​The MT47H64M16NF-25E AAT:M is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access M ...
Package: TRAY | MOQ: 1368 | MPQ: 1368

MT47H64M16HR-3:H TR / ​The MT47H64M16HR-3:H TR is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module manufactured by Micron Technology Inc. It is organized as 64 million words by 16 bits (64M x 16), providing a data bus width of 16 bits. The module operates with a supply voltage between 1.7V and 1.9V and features an access time of 450 picoseconds, ensuring rapid data retrieval. It supports a maximum clock frequency of 333 MHz, corresponding to a data transfer rate of 666 megabits per second per pin. The write cycle time for both word and page operations is 15 nanoseconds. Housed in an 84-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 8 x 12.5 mm, the module is suitable for surface-mount applications. It is rated for an operating temperature range of 0°C to 85°C, making it suitable for commercial applications. The TR suffix indicates that the module is supplied in tape and reel packaging, facilitating automated assembly processes. ​
MT47H64M16HR-3:H TR

Description: ​The MT47H64M16HR-3:H TR is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memo ...
Package: T&R | MOQ: 2000 | MPQ: 2000

IS46DR16640C-3DBLA1-TR / ​The IS46DR16640C-3DBLA1-TR is a 1-gigabit DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module produced by Integrated Silicon Solution Inc. (ISSI). It features a 64M x 16-bit organization, operating at a clock frequency of up to 333 MHz, which corresponds to a data transfer rate of 666 megabits per second per pin. The module requires a supply voltage between 1.7V and 1.9V and offers an access time of 450 picoseconds. It is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8mm x 12.5mm and is rated for an operating temperature range of -40°C to +95°C, making it suitable for automotive applications. The TR suffix indicates that the module is supplied in tape and reel packaging, ideal for automated assembly processes.​
IS46DR16640C-3DBLA1-TR

Description: ​The IS46DR16640C-3DBLA1-TR is a 1-gigabit DDR2 Synchronous Dynamic Random-Access Memory ...
Package: T&R | MOQ: 2500 | MPQ: 2500

IS46DR16640C-25DBLA2-TR / ​The IS46DR16640C-25DBLA2-TR is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at a clock frequency of up to 400 MHz, delivering data transfer rates up to 800 megabits per second per pin. The device requires a supply voltage between 1.7V and 1.9V and offers an access time of 400 picoseconds. It features a 4-bit prefetch architecture and supports a write cycle time of 15 nanoseconds. The SDRAM includes eight internal banks for concurrent operations and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features include on-die termination (ODT), automatic and controlled precharge commands, auto-refresh and self-refresh modes, and a refresh interval of 7.8 µs. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within an industrial temperature range of -40°C to 105°C, making it suitable for various applications requiring high-speed and reliable memory solutions. ​
IS46DR16640C-25DBLA2-TR

Description: ​The IS46DR16640C-25DBLA2-TR is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access ...
Package: T&R | MOQ: 2500 | MPQ: 2500

IS46DR16640C-25DBLA2 / ​The IS46DR16640C-25DBLA2 is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at a clock frequency of up to 400 MHz, delivering data transfer rates up to 800 megabits per second per pin. The device requires a supply voltage between 1.7V and 1.9V and offers an access time of 400 picoseconds. It features a 4-bit prefetch architecture and supports a write cycle time of 15 nanoseconds. The SDRAM includes eight internal banks for concurrent operations and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features include on-die termination (ODT), automatic and controlled precharge commands, auto-refresh and self-refresh modes, and a refresh interval of 7.8 µs. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within an industrial temperature range of -40°C to 105°C, making it suitable for various applications requiring high-speed and reliable memory solutions. ​
IS46DR16640C-25DBLA2

Description: ​The IS46DR16640C-25DBLA2 is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Mem ...
Package: TRAY | MOQ: 418 | MPQ: 209

IS46DR16640B-25EBLA1 / ​The IS46DR16640B-25EBLA1 is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at clock frequencies up to 400 MHz, delivering data transfer rates up to 800 megabits per second per pin. The device requires a supply voltage between 1.7V and 1.9V and offers an access time of 400 picoseconds. It features a 4-bit prefetch architecture and supports programmable CAS latencies of 3, 4, 5, 6, and 7, along with programmable additive latencies from 0 to 6. The SDRAM includes eight internal banks for concurrent operations and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features include on-die termination (ODT), automatic and controlled precharge commands, auto-refresh and self-refresh modes, and a refresh interval of 7.8 µs. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within an industrial temperature range of -40°C to 85°C, making it suitable for various applications requiring high-speed and reliable memory solutions. ​
IS46DR16640B-25EBLA1

Description: ​The IS46DR16640B-25EBLA1 is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Mem ...
Package: TRAY | MOQ: 418 | MPQ: 209

IS43DR16640C-25DBLI / ​The IS43DR16640C-25DBLI is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at a clock frequency of up to 400 MHz, delivering data transfer rates up to 800 megabits per second per pin. The device requires a supply voltage between 1.7V and 1.9V and offers an access time of 400 picoseconds. It features a 4-bit prefetch architecture and supports a write cycle time of 15 nanoseconds. The SDRAM includes eight internal banks for concurrent operations and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features include on-die termination (ODT), automatic and controlled precharge commands, auto-refresh and self-refresh modes, and a refresh interval of 7.8 µs. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within an industrial temperature range of -40°C to 85°C, making it suitable for various applications requiring high-speed and reliable memory solutions. ​
IS43DR16640C-25DBLI

Description: ​The IS43DR16640C-25DBLI is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memo ...
Package: TRAY | MOQ: 418 | MPQ: 209

IS43DR16640C-25DBL / ​The IS43DR16640C-25DBL is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at a clock frequency of up to 400 MHz, delivering data transfer rates up to 800 megabits per second per pin. The device requires a supply voltage between 1.7V and 1.9V and offers an access time of 400 picoseconds. It features a 4-bit prefetch architecture and supports a write cycle time of 15 nanoseconds. The SDRAM includes eight internal banks for concurrent operations and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features include on-die termination (ODT), automatic and controlled precharge commands, auto-refresh and self-refresh modes, and a refresh interval of 7.8 µs. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within a temperature range of 0°C to 85°C, making it suitable for various applications requiring high-speed and reliable memory solutions. ​
IS43DR16640C-25DBL

Description: ​The IS43DR16640C-25DBL is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memor ...
Package: TRAY | MOQ: 418 | MPQ: 209

IS43DR16640B-25EBL / The IS43DR16640B-25EBL is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at clock frequencies up to 400 MHz, achieving data transfer rates up to 800 megabits per second per pin. The device functions within a supply voltage range of 1.7V to 1.9V and offers an access time of 450 picoseconds. It features a 4-bit prefetch architecture and supports programmable CAS latencies of 3, 4, 5, 6, and 7, along with programmable additive latencies from 0 to 6. The SDRAM includes eight internal banks for concurrent operation and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features include on-die termination (ODT), automatic and controlled precharge commands, auto-refresh and self-refresh modes, and a refresh interval of 7.8 µs. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within an industrial temperature range of 0°C to 70°C, making it suitable for various applications requiring high-speed and reliable memory solutions. ​Alternative P/N: IS43DR16640B-25EBLI
IS43DR16640B-25EBL

Description: The IS43DR16640B-25EBL is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory ( ...
Package: TRAY | MOQ: 418 | MPQ: 209

IS43DR16640B-25DBLI / ​The IS43DR16640B-25DBLI is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at clock frequencies up to 400 MHz, delivering data transfer rates up to 800 megabits per second per pin. The device functions within a supply voltage range of 1.7V to 1.9V and offers an access time of 400 picoseconds. It features a 4-bit prefetch architecture and supports programmable CAS latencies of 3, 4, 5, 6, and 7, along with programmable additive latencies from 0 to 6. The SDRAM includes eight internal banks for concurrent operation and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features comprise on-die termination (ODT), off-chip driver (OCD) impedance adjustment, and automatic and controlled precharge commands. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within a temperature range of -40°C to +85°C, making it suitable for various industrial applications requiring high-speed and reliable memory solutions. ​
IS43DR16640B-25DBLI

Description: ​The IS43DR16640B-25DBLI is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memo ...
Package: TRAY | MOQ: 418 | MPQ: 209

EM68C16CWQG-25IH / ​The EM68C16CWQG-25IH is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Etron Technology, organized as 64 million words by 16 bits (64M x 16). Designed for high-performance applications, it operates at a clock frequency of 400 MHz, achieving data transfer rates up to 800 megabits per second per pin. The device operates within a supply voltage range of 1.7V to 1.9V and offers an access time of 400 picoseconds. It features a write cycle time of 15 nanoseconds and is housed in an 84-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 8 x 12.5 mm. With an operating temperature range from -40°C to +95°C, the EM68C16CWQG-25IH is suitable for various industrial applications requiring reliable and efficient memory solutions. ​
EM68C16CWQG-25IH

Description: ​The EM68C16CWQG-25IH is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory ...
Package: T&R | MOQ: 2500 | MPQ: 2500

AS4C64M16D2A-25BIN / ​The AS4C64M16D2A-25BIN is a high-speed, 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Alliance Memory, organized as 64 million words by 16 bits (64M x 16). Designed for high-performance applications, it features a double-data-rate architecture with an 8n prefetch, enabling data transfer rates up to 400 MHz. The device operates with a supply voltage range of 1.7V to 1.9V and supports fully synchronous operations with a differential clock (CK and CK#). It includes eight internal banks for concurrent operation and offers programmable CAS latencies of 3, 4, and 5. Additional features encompass bidirectional single/differential data strobes (DQS and DQS#), on-die termination (ODT), off-chip driver (OCD) impedance adjustment, and automatic self-refresh with a refresh period of 7.8 µs. The AS4C64M16D2A-25BIN is housed in an 84-ball FBGA package and operates within an industrial temperature range of -40°C to 95°C, making it suitable for various applications requiring reliable and efficient memory solutions. T&R Part Number: ​AS4C64M16D2A-25BINTR
AS4C64M16D2A-25BIN

Description: ​The AS4C64M16D2A-25BIN is a high-speed, 1-gigabit (Gb) DDR2 Synchronous Dynamic Random- ...
Package: TRAY | MOQ: 418 | MPQ: 209

XC6SLX150-3FGG900I / ​The XC6SLX150-3FGG900I is a high-performance Field Programmable Gate Array (FPGA) from Xilinx Spartan-6 LX series, designed to deliver efficient system integration for cost-sensitive applications. Fabricated using a 45 nm process technology, it offers a balance between power consumption and performance. The device features approximately 147,443 logic cells and 11,519 Configurable Logic Blocks (CLBs), providing substantial resources for complex digital designs. It includes 4,939,776 bits of total RAM, facilitating efficient data storage and retrieval. With 576 versatile I/O pins, the FPGA supports data transfer rates up to 1,080 Mb/s per differential I/O, accommodating a range of I/O standards from 3.3V to 1.2V. Operating at a core voltage of 1.2V, the FPGA supports an operating temperature range from -40°C to 100°C, making it suitable for diverse environmental conditions. The device also incorporates efficient DSP48A1 slices for high-performance arithmetic and signal processing, integrated memory controller blocks compatible with DDR, DDR2, DDR3, and LPDDR, and Clock Management Tiles (CMTs) featuring Digital Clock Managers (DCMs) and Phase-Locked Loops (PLLs) for flexible, low-noise clocking. Security features include a unique Device DNA identifier for design authentication and AES bitstream encryption for enhanced design protection. These attributes make the XC6SLX150-3FGG900I well-suited for applications in digital signal processing, communications systems, industrial control, automotive systems, and aerospace and defense sectors. ​
XC6SLX150-3FGG900I

Description: ​The XC6SLX150-3FGG900I is a high-performance Field Programmable Gate Array (FPGA) from ...
Package: TRAY | MOQ: 27 | MPQ: 27

N25Q256A13E1240E / ​The N25Q256A13E1240E is a 256-megabit (32MB) NOR Flash memory chip from Micron Technology, designed for high-performance and reliable non-volatile storage. It utilizes a Serial Peripheral Interface (SPI) supporting clock frequencies up to 108 MHz, facilitating rapid data transfer. The memory is organized into 512 main sectors of 64KB each, further divided into 8,192 subsectors of 4KB, allowing flexible and efficient memory management. Notable features include hardware-based write protection, 64 one-time programmable (OTP) bytes for secure data storage, and the ability to pause and resume program or erase cycles via dedicated suspend and resume instructions. Operating within a voltage range of 2.7V to 3.6V and a temperature range of -40°C to 85°C, it is suitable for various applications, including embedded systems, telecommunications, automotive electronics, industrial automation, and consumer electronics. ​
N25Q256A13E1240E

Description: ​The N25Q256A13E1240E is a 256-megabit (32MB) NOR Flash memory chip from Micron Technolo ...
Package: TRAY | MOQ: 1122 | MPQ: 1122

MT29F1G08ABADAH4-IT / ​The MT29F1G08ABADAH4-IT:D is a 1-gigabit (128M x 8) single-level cell (SLC) NAND flash memory device from Micron Technology. Operating within a voltage range of 2.7V to 3.6V, it offers reliable non-volatile storage suitable for a variety of applications. The device is designed to function effectively in industrial environments, supporting an operating temperature range from -40°C to 85°C. It is housed in a compact 63-ball VFBGA package, measuring 9mm x 11mm, facilitating efficient integration into space-constrained designs. However, it is important to note that this model has been classified as obsolete, and designers should consider this status when planning new projects. ​
MT29F1G08ABADAH4-IT

Description: ​The MT29F1G08ABADAH4-IT:D is a 1-gigabit (128M x 8) single-level cell (SLC) NAND flash ...
Package: TRAY | MOQ: 1260 | MPQ: 1260

MT47H64M16HR-3 IT:H / ​The MT47H64M16HR-3 IT:H is a 1-gigabit (1Gb) DDR2 SDRAM (Synchronous Dynamic Random-Access Memory) chip developed by Micron Technology. Organized as 64 million words by 16 bits (64M x 16), it operates with a supply voltage range of 1.7V to 1.9V. The device supports a clock frequency of up to 333 MHz and features a data transfer rate of 667 MT/s (megatransfers per second). Designed to meet JEDEC standards, it offers programmable CAS (Column Address Strobe) latency, burst length, and burst type, providing flexibility for various applications. The MT47H64M16HR-3 IT:H includes on-die termination (ODT) and a posted CAS additive latency feature to enhance signal integrity and performance. With an access time of approximately 450 ps, it ensures quick data retrieval. The device is housed in an 84-ball Fine-Pitch Ball Grid Array (FBGA) package, measuring 8 mm x 12.5 mm, and is suitable for surface-mount technology. Its industrial temperature range of -40°C to 95°C makes it ideal for use in networking equipment, computing systems, and other high-performance applications. ​
MT47H64M16HR-3 IT:H

Description: ​The MT47H64M16HR-3 IT:H is a 1-gigabit (1Gb) DDR2 SDRAM (Synchronous Dynamic Random-Acc ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

V9260F / ​The V9260F is a single-phase energy metering analog front-end (AFE) integrated circuit (IC) developed by Vango Technology. It is designed to accurately measure active and reactive energy in single-phase electrical systems. It meets the requirements of IEC 62053-21:2003, IEC 62053-22:2003, and IEC 62053-23:2003 standards, ensuring less than 0.1% error in active and reactive energy metering over a dynamic range of 5000:1. Operating with a 3.3V power supply, the V9260F consumes approximately 1.7mA during full operation, making it suitable for energy-efficient applications. It features an internal reference voltage of 1.210V with a typical temperature coefficient of 10ppm/°C, providing stable and accurate voltage references for metering applications. The IC supports configurations for measuring active and reactive power through either two current channels for active metering or one current channel for both active and reactive power metering, offering flexibility based on application requirements. It utilizes a UART interface with automatic baud rate adaptation ranging from 1200bps to 19200bps, facilitating easy integration with microcontrollers and other digital systems for data retrieval and configuration. The V9260F operates without the need for an external crystal oscillator, simplifying design and reducing component count. It is designed to function within an operating temperature range of -40°C to +85°C, suitable for various environmental conditions.
V9260F

Description: ​The V9260F is a single-phase energy metering analog front-end (AFE) integrated circuit ...
Package: T&R | MOQ: 3000 | MPQ: 3000

MSP430F5659IPZR / ​The MSP430F5659IPZR is a mixed-signal microcontroller from Texas Instruments, featuring a 16-bit RISC CPU operating at up to 20 MHz. It offers 512 KB of flash memory and 66 KB of SRAM, providing substantial storage for complex applications. The device includes a high-performance 12-bit ADC with multiple channels for precise analog-to-digital conversions, as well as two 12-bit DACs for digital-to-analog signal generation. It also features four 16-bit timers, a hardware multiplier, DMA support, a real-time clock module with alarm capabilities, a comparator, and up to 74 I/O pins. Connectivity options include USB 2.0, I²C, IrDA, SPI, and UART/USART interfaces. Operating over a supply voltage range of 1.8 V to 3.6 V, the MSP430F5659IPZR is housed in a 100-pin LQFP package, making it suitable for applications requiring a balance of performance, memory, and peripheral integration. ​
MSP430F5659IPZR

Description: ​The MSP430F5659IPZR is a mixed-signal microcontroller from Texas Instruments, featuring ...
Package: T&R | MOQ: 1000 | MPQ: 1000

TPS63070RNMR / ​The TPS63070RNMR is a high-efficiency, low-quiescent current buck-boost converter from Texas Instruments, designed to provide a stable output voltage even when the input voltage is above or below the desired output. It operates over a wide input voltage range of 2.0 V to 16 V and supports output voltages between 2.5 V and 9 V, delivering up to 2 A of output current in both boost and buck modes. The converter utilizes synchronous rectification and a fixed-frequency, pulse-width modulation (PWM) controller to achieve efficiencies up to 95%. At light load conditions, it enters Power Save Mode to maintain high efficiency across varying load currents. Additional features include a precise ENABLE input for undervoltage lockout settings, automatic transition between step-down and boost modes, forced fixed-frequency operation at 2.4 MHz with synchronization capability, a power-good output, and load disconnect during shutdown to minimize battery drain. The TPS63070RNMR is housed in a compact 2.5 mm x 3 mm QFN package, making it suitable for space-constrained applications requiring efficient power conversion. ​
TPS63070RNMR

Description: ​The TPS63070RNMR is a high-efficiency, low-quiescent current buck-boost converter from ...
Package: T&R | MOQ: 3000 | MPQ: 3000

MSP430F6749AIPEUR / ​The MSP430F6749AIPEUR is a highly integrated polyphase metering system-on-chip (SoC) from Texas Instruments, tailored for precise energy metering applications. It features a 16-bit MSP430 CPU operating at up to 25 MHz, complemented by 512 KB of flash memory and 32 KB of SRAM, providing substantial storage for complex metering algorithms. The device incorporates up to seven independent 24-bit sigma-delta ADCs with differential inputs and programmable gain, ensuring accurate multi-phase measurements. It also includes a 10-bit SAR ADC for additional analog-to-digital conversion needs. For communication, the MSP430F6749AIPEUR offers multiple interfaces, including UART, SPI, I2C, and USB, facilitating versatile connectivity options. Security is addressed with an integrated AES-128 module, supporting data encryption and anti-tamper features. Designed for low-power operation, it offers various low-power modes to extend battery life in portable applications. Housed in a 128-pin LQFP package, the MSP430F6749AIPEUR is suitable for applications such as multi-phase energy meters, industrial automation, and power monitoring systems. ​
MSP430F6749AIPEUR

Description: ​The MSP430F6749AIPEUR is a highly integrated polyphase metering system-on-chip (SoC) fr ...
Package: T&R | MOQ: 750 | MPQ: 750

LNK3696G-TL / ​The LNK3696G-TL is an energy-efficient, low-power off-line switcher IC from Power Integrations, designed for applications requiring minimal component count and robust system-level protection. It integrates a 900 V power MOSFET, oscillator, ON/OFF control scheme, high-voltage switched current source, frequency jittering, cycle-by-cycle current limit, and thermal shutdown circuitry into a single monolithic IC. This integration simplifies design and reduces external component requirements. The device offers selectable current limit options and features fully integrated auto-restart functionality for short-circuit and open-loop protection. Its frequency jittering mechanism significantly reduces electromagnetic interference (EMI), and it meets high-voltage creepage requirements between the DRAIN pin and all other pins, both on the PCB and at the package level. The LNK3696G-TL operates over an input voltage range of 85 V to 265 V AC and delivers up to 8 W of output power, making it suitable for applications such as flyback converters, appliance power supplies, industrial systems, and metering devices. ​
LNK3696G-TL

Description: ​The LNK3696G-TL is an energy-efficient, low-power off-line switcher IC from Power Integ ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MSP430F5510IPTR / ​The MSP430F5510IPTR is a mixed-signal microcontroller from Texas Instruments, featuring a 16-bit RISC CPU that operates up to 25 MHz, providing efficient processing capabilities for various applications. It comes equipped with 32 KB of flash memory and 4 KB of SRAM, offering ample storage for program code and data. The microcontroller includes a high-performance 10-bit ADC with multiple channels, facilitating precise analog-to-digital conversions. It also offers integrated peripherals such as a hardware multiplier for efficient mathematical operations, DMA channels for data transfer, and multiple communication interfaces including UART, SPI, I2C, and USB, enhancing its versatility in different communication scenarios. Operating within a supply voltage range of 1.8 V to 3.6 V, the MSP430F5510IPTR is housed in a 48-pin LQFP package, making it suitable for space-constrained applications. ​
MSP430F5510IPTR

Description: ​The MSP430F5510IPTR is a mixed-signal microcontroller from Texas Instruments, featuring ...
Package: T&R | MOQ: 1000 | MPQ: 1000

ISO6731DWR / ​The ISO6731DWR is a high-performance, triple-channel digital isolator from Texas Instruments, designed to provide robust electromagnetic compatibility (EMC) and electrical isolation for digital signals in various applications. It features two forward-direction channels and one reverse-direction channel, facilitating flexible data communication configurations. The device operates over a supply voltage range of 2.25 V to 5.5 V and supports data rates up to 50 Mbps, ensuring efficient and reliable signal transmission. With an isolation voltage rating of 5000 Vrms per UL 1577, the ISO6731DWR offers reinforced isolation, protecting sensitive circuitry from voltage spikes and transients. It also boasts a high common-mode transient immunity (CMTI) of 50 kV/µs, making it suitable for environments with significant electrical noise. Housed in a 16-pin SOIC package, the ISO6731DWR is ideal for applications requiring robust isolation, such as industrial control systems, data communications, and automotive electronics. ​
ISO6731DWR

Description: ​The ISO6731DWR is a high-performance, triple-channel digital isolator from Texas Instru ...
Package: T&R | MOQ: 2000 | MPQ: 2000

CC1190RGVR / ​The CC1190RGVR is a high-performance RF front-end module from Texas Instruments, designed to enhance the range and sensitivity of wireless systems operating in the 850 to 950 MHz frequency range. It integrates a power amplifier (PA), low-noise amplifier (LNA), switches, and RF matching components into a compact 4 mm x 4 mm QFN-16 package. This integration simplifies design and reduces the need for external components. The CC1190RGVR offers up to 27 dBm (0.5 W) output power, significantly extending transmission range, and provides a 6 dB typical improvement in receiver sensitivity when used with Texas Instruments CC11xx and CC430 series transceivers. It operates efficiently over a supply voltage range of 2.0 V to 3.7 V, with a low receive current consumption of 3 mA in high-gain mode and a power-down mode consuming only 50 nA when both the LNA and PA are disabled. These features make the CC1190RGVR suitable for various applications, including wireless sensor networks, industrial systems, IEEE 802.15.4 systems, consumer electronics, wireless metering, and smart grid wireless networks. ​
CC1190RGVR

Description: ​The CC1190RGVR is a high-performance RF front-end module from Texas Instruments, design ...
Package: T&R | MOQ: 2500 | MPQ: 2500

R5F10MMEDFB#30 / ​The R5F10MMEDFB#30 is a 16-bit microcontroller from Renesas Electronics, part of the RL78/I1B series, designed for low-power and high-performance applications. Operating at a maximum frequency of 24 MHz, it integrates 64 KB of flash memory and 6 KB of RAM. The microcontroller supports a supply voltage range from 1.9 V to 5.5 V and is housed in an 80-pin LQFP package measuring 12 mm x 12 mm. It offers a range of peripherals, including a brown-out detect/reset, LCD controller, low-voltage detection, power-on reset, pulse-width modulation, and watchdog timer. With an operating temperature range of -40°C to +85°C, the R5F10MMEDFB#30 is suitable for various embedded applications requiring reliable performance in diverse environmental conditions.​
R5F10MMEDFB#30

Description: ​The R5F10MMEDFB#30 is a 16-bit microcontroller from Renesas Electronics, part of the RL ...
Package: TRAY | MOQ: 119 | MPQ: 119

DRV5032FBDBZR / ​The DRV5032FBDBZR is an ultra-low-power digital-switch Hall effect sensor from Texas Instruments, designed for compact and battery-sensitive applications. Operating within a supply voltage range of 1.65 V to 5.5 V, it features a typical power consumption of 0.54 µA at a 5-Hz sampling rate. This omnipolar sensor responds to both north and south magnetic fields, with an operate point (BOP) of ±4.8 mT and a release point (BRP) of ±3 mT, resulting in a hysteresis (BHYS) of 1.5 mT. The device provides a push-pull output configuration and is housed in a 3-pin SOT-23 package. With an operating temperature range from –40°C to +85°C, the DRV5032FBDBZR is suitable for various applications, including battery-critical position sensing, portable electronics, and contactless activation systems. ​
DRV5032FBDBZR

Description: ​The DRV5032FBDBZR is an ultra-low-power digital-switch Hall effect sensor from Texas In ...
Package: T&R | MOQ: 3000 | MPQ: 3000

R7FA4M2AD3CFP#AA0 / ​The R7FA4M2AD3CFP is a 32-bit microcontroller from Renesas Electronics, featuring an ARM® Cortex®-M33 core operating at up to 100 MHz. It offers 512 KB of code flash memory, 8 KB of data flash memory, and 128 KB of SRAM. The microcontroller supports various connectivity options, including CANbus, I2C, QSPI, SCI, SPI, UART/USART, and USB. It also includes peripherals such as a 12-bit ADC with 13 channels, two 12-bit DACs, temperature sensor, and multiple timers. Security features comprise a Secure Crypto Engine supporting AES, RSA, and SHA algorithms, along with Arm® TrustZone® technology. Operating within a supply voltage range of 2.7 V to 3.6 V and a temperature range of -40°C to 105°C, it is housed in a 100-LQFP package measuring 14x14 mm. ​
R7FA4M2AD3CFP#AA0

Description: ​The R7FA4M2AD3CFP is a 32-bit microcontroller from Renesas Electronics, featuring an AR ...
Package: TRAY | MOQ: 360 | MPQ: 90

TLV70433DBVR / The TLV70433DBVR is a low-dropout (LDO) linear voltage regulator from Texas Instruments, designed for applications requiring low power consumption and high efficiency. It operates over a wide input voltage range of 2.5 V to 24 V, with a maximum of 30 V for newer versions, and provides a fixed output voltage of 3.3 V. The regulator supports an output current of up to 150 mA, making it suitable for powering low-current devices. Notably, it features an ultra-low quiescent current of approximately 3.4 µA at a 100-mA load, enhancing battery life in portable applications. The device offers a typical dropout voltage of 850 mV at 100 mA load current, ensuring efficient operation even with minimal input-output voltage differentials. It maintains stability with output capacitors of 0.47 µF or greater and includes built-in overcurrent protection to safeguard against excessive load conditions. Packaged in a compact 5-pin SOT-23 (DBV) form factor, the TLV70433DBVR operates over an ambient temperature range of –40°C to +125°C, making it ideal for applications such as battery-powered equipment, portable electronics, and low-power microcontrollers.
TLV70433DBVR

Description: The TLV70433DBVR is a low-dropout (LDO) linear voltage regulator from Texas Instruments, d ...
Package: T&R | MOQ: 3000 | MPQ: 3000

TLV9004IDR / ​The TLV9004IDR is a quad-channel, low-power operational amplifier from Texas Instruments, designed for cost-sensitive applications requiring low-voltage operation and high capacitive-load driving capabilities. Operating within a supply voltage range of 1.8 V to 5.5 V, it features rail-to-rail input and output swings, enhancing its versatility in various designs. Key specifications include a unity-gain bandwidth of 1 MHz, a slew rate of 2 V/µs, low input offset voltage of ±0.4 mV, and a low quiescent current of 60 µA per channel. Additionally, it boasts a low input bias current of 5 pA and a low broadband noise of 27 nV/√Hz, contributing to its high performance in noise-sensitive applications. The amplifier is unity-gain stable and incorporates an internal RFI and EMI filter, ensuring robust operation in environments with radio-frequency interference. Its design facilitates easier stabilization with higher capacitive loads due to its resistive open-loop output impedance. The TLV9004IDR operates over an extended temperature range of –40°C to 125°C and is available in a 14-pin SOIC package, making it suitable for space-constrained applications such as smoke detectors, wearable electronics, and small appliances. ​
TLV9004IDR

Description: ​The TLV9004IDR is a quad-channel, low-power operational amplifier from Texas Instrument ...
Package: T&R | MOQ: 2500 | MPQ: 2500

STM32F302R8T6 / The STM32F302R8T6 is a high-performance 32-bit ARM® Cortex®-M4 microcontroller with a built-in Floating Point Unit (FPU), designed for real-time control applications. It operates at a clock speed of up to 72 MHz, offering excellent processing power for signal processing and control tasks. The MCU features 64 KB of Flash memory and 16 KB of SRAM, providing ample storage for firmware and data. It integrates multiple communication interfaces, including I²C, SPI, USART, and CAN, making it highly adaptable for industrial and consumer applications. A key highlight of the STM32F302R8T6 is its advanced analog capabilities, featuring four fast 12-bit ADCs, a 12-bit DAC, and multiple comparators and operational amplifiers, making it ideal for motor control and precision sensing applications. The rich set of timers, including high-resolution PWM timers and advanced motor control timers, enables precise motion control. It supports both single- and dual-channel quadrature encoders, enhancing its suitability for robotics and automation. With a wide operating voltage range (2.0V to 3.6V), low-power modes, and temperature operation from -40°C to +85°C, the STM32F302R8T6 is robust and power-efficient. Its LQFP-64 package offers a compact and easy-to-integrate form factor. The microcontroller is supported by STM32Cube firmware and development tools, simplifying software development and system integration for a broad range of embedded applications.
STM32F302R8T6

Description: The STM32F302R8T6 is a high-performance 32-bit ARM® Cortex®-M4 microcontroller with a bu ...
Package: TRAY | MOQ: 320 | MPQ: 160

STSPIN32F0A / The STSPIN32F0A is an advanced motor controller and driver that integrates an STM32F0 microcontroller with a three-phase gate driver for efficient and compact motor control applications. It features an embedded 32-bit ARM® Cortex®-M0 core, providing high-performance processing for real-time motor control algorithms. The device includes six dedicated MOSFET gate drivers, allowing it to drive various motor types, including BLDC (Brushless DC) and PMSM (Permanent Magnet Synchronous Motors). The STSPIN32F0A supports sensorless and sensored motor control techniques using Field-Oriented Control (FOC) or six-step control, making it versatile for industrial and consumer applications. It operates with a wide voltage range (6.5V to 45V), ensuring compatibility with different power supply configurations. The integrated buck converter (3.3V) enables power savings and efficient peripheral management. Additional features include overcurrent protection (OCP), undervoltage lockout (UVLO), thermal shutdown (TSD), and cross-conduction prevention, ensuring system safety and reliability. With its compact design, built-in diagnostic functions, and support for SPI, UART, and I²C interfaces, the STSPIN32F0A is an excellent choice for industrial automation, robotics, power tools, and home appliances. Its combination of processing power and motor control capabilities makes it a cost-effective and space-saving solution for modern motor-driven applications.
STSPIN32F0A

Description: The STSPIN32F0A is an advanced motor controller and driver that integrates an STM32F0 micr ...
Package: TRAY | MOQ: 520 | MPQ: 260

IIS2DHTR / The IIS2DHTR is a high-performance ultra-low-power 2-axis digital accelerometer designed for industrial and consumer applications. It features a wide full-scale range of ±2g, ±4g, ±8g, and ±16g, allowing precise motion sensing across various applications. The device boasts a low power consumption mode, making it ideal for battery-powered devices. With its high-resolution 16-bit output and embedded temperature sensor, it ensures accurate and reliable data acquisition. The integrated FIFO buffer minimizes power consumption by reducing the need for frequent processor interaction. It also supports wake-up and free-fall detection, as well as tilt, activity/inactivity, and motion detection, enhancing its usability in IoT, wearable, and industrial monitoring systems. Additionally, the I²C/SPI digital interfaces enable seamless integration with microcontrollers. The embedded self-test feature ensures device reliability, while its compact LGA package makes it suitable for space-constrained designs.
IIS2DHTR

Description: The IIS2DHTR is a high-performance ultra-low-power 2-axis digital accelerometer designed f ...
Package: T&R | MOQ: 1000 | MPQ: 8000

IIS2MDCTR / ​The IIS2MDCTR is a high-accuracy, ultra-low-power 3-axis digital magnetometer from STMicroelectronics, designed for precise magnetic field measurements in various applications. It offers a magnetic field dynamic range up to ±50 gauss and delivers 16-bit data output. The sensor supports both I²C and SPI interfaces, accommodating standard, fast mode, fast mode plus, and high-speed communications at frequencies of 100 kHz, 400 kHz, 1 MHz, and 3.4 MHz. Operating within a supply voltage range of 1.71 V to 3.6 V, the IIS2MDCTR is suitable for battery-powered devices. It features an embedded temperature sensor, programmable interrupt generator for magnetic field detection, and self-test capability. The device is housed in a compact 12-lead LGA package measuring 2 mm x 2 mm x 0.7 mm and operates over an extended temperature range from -40°C to +85°C. These characteristics make the IIS2MDCTR ideal for applications such as compasses in inertial measurement units (IMUs), presence detection, and variable magnetic field monitoring. ​
IIS2MDCTR

Description: ​The IIS2MDCTR is a high-accuracy, ultra-low-power 3-axis digital magnetometer from STMi ...
Package: T&R | MOQ: 1000 | MPQ: 10000













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