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M321R4GA3EB2-CCP / This is a 32 GB DDR5‑6400 MT/s RDIMM (Registered DIMM), with dual‑rank ×8 organization and a full 72‑bit + ECC data path. Operating at PC5‑51200 bandwidth (~51.2 GB/s), it uses an efficient 1.1 V supply and features a CAS latency of CL52, delivering high-speed performance optimized for server workloads. Engineered for enterprise environments, it includes ECC error correction and a registered buffer to enhance signal integrity and reliability in multi‑DIMM systems. It supports both x8 and x4 DRAM organization, across two ranks per DIMM and up to 2 DIMMs-per-channel configurations. Built in the standard 288‑pin DDR5 RDIMM form factor, the module comprises 20 × 2 Gb × 8 DRAM chips, is in mass production, and complies with RoHS and halogen-free standards. It is commonly validated by Supermicro and OEMs for broad server compatibility and typically available through major enterprise distributors.
M321R4GA3EB2-CCP

Description: This is a 32 GB DDR5‑6400 MT/s RDIMM (Registered DIMM), with dual‑rank ×8 organiz ...
Package: TRAY | MOQ: 45 | MPQ: 15

M321RYGA0PB0-CWM / This is a 96 GB DDR5‑5600 MT/s RDIMM (Registered DIMM), configured as dual‑rank ×4 with a full 80‑bit data path (72 bits + ECC), specifically designed for server-grade workloads. It offers PC5‑44800 bandwidth (~44.8 GB/s) and runs on a power-efficient 1.1 V supply, with a CAS latency of CL46, ensuring high throughput and dependable timing. The module includes ECC error correction and a registered buffer, enhancing data integrity and signal stability in dense, multi-DIMM system environments. It supports x4/x8 device configurations, up to two ranks per DIMM, and 2 DIMMs-per-channel setups.
M321RYGA0PB0-CWM

Description: This is a 96 GB DDR5‑5600 MT/s RDIMM (Registered DIMM), configured as dual‑rank  ...
Package: TRAY | MOQ: 100 | MPQ: 20

M321R8GA0PB0-CWM / This is a 64 GB DDR5‑5600 MT/s Registered DIMM (RDIMM), configured as dual‑rank ×4 with a full 72 + 8 ECC‑bit data path, engineered for server-grade performance. It delivers PC5‑44800 bandwidth (~44.8 GB/s), runs on an efficient 1.1 V supply, and maintains CAS latency CL46, offering a strong balance of speed and stability. Enterprise-ready, it features ECC error correction to detect and fix single-bit errors, along with a registered buffer to ensure signal integrity in dense, multi-DIMM configurations. It supports both x4 and x8 DRAM configurations and is validated for up to 2 ranks per DIMM and dual-DIMM-per-channel setups.
M321R8GA0PB0-CWM

Description: This is a 64 GB DDR5‑5600 MT/s Registered DIMM (RDIMM), configured as dual‑rank  ...
Package: TRAY | MOQ: 100 | MPQ: 25

M321R8GA0EB2-CWM / This is a 64 GB DDR5‑5600 MT/s RDIMM, configured as dual‑rank ×4 with a full 72 + 8 ECC‑bit data path, designed for server-grade workloads. It delivers PC5‑44800 bandwidth (~44.8 GB/s) and operates on a low 1.1 V power supply, with a CAS latency of CL46, ensuring both high throughput and timing stability. Engineered for enterprise environments, it includes ECC error‑correction and a registered buffer (on-module register) to enhance signal integrity and reliability under dense, multi-DIMM configurations, supporting x4 or x8 chip organization across up to 2 ranks and 2 DIMMs-per-channel setups.
M321R8GA0EB2-CWM

Description: This is a 64 GB DDR5‑5600 MT/s RDIMM, configured as dual‑rank ×4 with a full 72 ...
Package: TRAY | MOQ: 100 | MPQ: 20

M321R4GA3PB0-CWM / This is a 32 GB DDR5‑5600 MT/s RDIMM (Registered DIMM), configured as dual-rank (2R × 8) with a full 72‑bit data path plus ECC, engineered for server-grade workloads. It delivers PC5‑44800 bandwidth (~44.8 GB/s), operates on an energy-efficient 1.1 V supply, and features CAS latency CL46, offering strong performance with stable timing. The module includes ECC error‑correction and a registered buffer, improving data integrity and signal quality across multi-DIMM setups in dense server environments.
M321R4GA3PB0-CWM

Description: This is a 32 GB DDR5‑5600 MT/s RDIMM (Registered DIMM), configured as dual-rank (2Râ ...
Package: TRAY | MOQ: 100 | MPQ: 20

MTC40F204WS1RC64BC1T / This is a 96 GB DDR5‑6400 MT/s RDIMM (Registered DIMM), organized as dual-rank ×4 with an 80-bit data path (72 bits + ECC), designed for high-density, performance-critical server and virtualization environments. It delivers PC5‑51200 bandwidth (~51.2 GB/s), runs on an energy-efficient 1.1 V supply, and uses CAS latency CL52, offering ultra-fast data throughput with stable timing. As enterprise-grade memory, it supports ECC error-correction and includes a registered buffer, ensuring data integrity and signal reliability across multi-DIMM configurations.
MTC40F204WS1RC64BC1T

Description: This is a 96 GB DDR5‑6400 MT/s RDIMM (Registered DIMM), organized as dual-rank ×4 w ...
Package: TRAY | MOQ: 100 | MPQ: 20

MTC40F2046S1RC64BD2T / This is a 64 GB DDR5‑6400 MT/s RDIMM (Registered DIMM), dual‑rank ×4 with an 80‑bit data width (72 bits + ECC), tailored for high-throughput, server-grade workloads. It supports PC5‑51200 bandwidth (~51.2 GB/s), runs on an energy-efficient 1.1 V supply, and features CAS latency CL52, delivering top-tier performance and stability. Designed for enterprise environments, it includes ECC error‑correction and a registered buffer to ensure data integrity and signal reliability in multi-DIMM configurations.
MTC40F2046S1RC64BD2T

Description: This is a 64 GB DDR5‑6400 MT/s RDIMM (Registered DIMM), dual‑rank ×4 with an 80†...
Package: TRAY | MOQ: 60 | MPQ: 20

MTC20F1045S1RC64BD2T / This module is a 96 GB DDR5‑5600 MT/s RDIMM, with a dual‑rank ×4 organization and an 80‑bit data path (72 + ECC), tailored for memory‑intensive server and virtualization workloads. It supports PC5‑44800 bandwidth (~44.8 GB/s), operates at a low 1.1 V, and utilizes a CAS latency of CL46 (46‑45‑45), delivering high data throughput with stable timing. As enterprise‑grade memory, it includes ECC to detect and correct single‑bit errors and a registered buffer for signal integrity in multi‑DIMM server setups. It comes in a standard 288‑pin DDR5 RDIMM form factor, is rated for commercial temperatures (0 °C–95 °C), and carries RoHS compliance. It’s widely validated across enterprise platforms and often used as an OEM or factory‑spec module for major server manufacturers .
MTC20F1045S1RC64BD2T

Description: This module is a 96 GB DDR5‑5600 MT/s RDIMM, with a dual‑rank ×4 organization and ...
Package: TRAY | MOQ: 60 | MPQ: 20

MTC40F204WS1RC56BB2T / This is a 96 GB DDR5‑5600 MT/s RDIMM (Registered DIMM), arranged as dual‑rank ×4 with an 80‑bit data path (72 bits + ECC), making it ideal for memory-intensive server and virtualization workloads. It delivers PC5‑44800 bandwidth (~44.8 GB/s), operates at an energy-efficient 1.1 V supply, and features CAS latency CL46 (46‑45‑45), balancing ultra-fast throughput with stable timing. As a high-end enterprise module, it supports ECC error correction and includes a registered buffer for strong data integrity and signal stability in dense, multi-DIMM server configurations. The module uses the standard 288‑pin DDR5 RDIMM form factor, offers a maximum operating temperature of +95 °C, and carries RoHS compliance, ensuring durability and environmental standards. It’s broadly validated across enterprise-grade platforms, often found as either Micron-labeled or OEM-branded replacement for systems like Dell, HP, and others.
MTC40F204WS1RC56BB2T

Description: This is a 96 GB DDR5‑5600 MT/s RDIMM (Registered DIMM), arranged as dual‑rank ×4 ...
Package: TRAY | MOQ: 100 | MPQ: 20

MTC40F2046S1RC56BD2T / This is a 64 GB DDR5‑5600 MT/s RDIMM (Registered DIMM), dual‑rank (2Rx4) with a full 80‑bit data path (72 bits + ECC), making it ideal for high-performance servers and workstations. It supports PC5‑44800 bandwidth (~44.8 GB/s), operates at energy-efficient 1.1 V, and maintains CAS latency CL46, delivering strong throughput and stability under heavy workloads. As an enterprise-grade module, it features ECC error‑correction to detect and fix single-bit errors and includes a registered buffer, enhancing signal integrity in high-density, multi-DIMM configurations. It follows the standard 288‑pin RDIMM form factor and is widely validated across server platforms from Intel and AMD, including Supermicro certification.
MTC40F2046S1RC56BD2T

Description: This is a 64 GB DDR5‑5600 MT/s RDIMM (Registered DIMM), dual‑rank (2Rx4) with a fu ...
Package: TRAY | MOQ: 100 | MPQ: 20

MTC20F2085S1RC56BD2T / This is a 32 GB DDR5‑5600 MT/s RDIMM (registered DIMM), dual‑rank (2Rx8) ECC memory optimized for servers and workstations. It offers PC5‑44800 bandwidth (~44.8 GB/s), operates at an energy-efficient 1.1 V, and uses CAS latency CL46—ideal for high-speed data throughput. The module includes ECC (error-correcting code) to detect and correct single-bit errors, and a registered buffer to maintain signal integrity in high-density, multi-DIMM configurations. It meets the standard 288-pin RDIMM form factor, making it compatible with most enterprise-class motherboards.
MTC20F2085S1RC56BD2T

Description: This is a 32 GB DDR5‑5600 MT/s RDIMM (registered DIMM), dual‑rank (2Rx8) ECC memor ...
Package: TRAY | MOQ: 100 | MPQ: 20

HMAA8GR7CJR4N / This is a 64 GB DDR4‑3200 MT/s RDIMM (Registered DIMM), configured in dual-rank (2Rx4) with a full 72-bit data path, designed for demanding server environments. It operates at PC4‑25600 bandwidth (~25.6 GB/s) on a low 1.2 V supply, with a CAS latency of CL22, offering a solid mix of speed and efficiency. As an enterprise-grade module, it supports ECC error-correction and features a registered buffer, ensuring data integrity and signal stability in high-density, multi-DIMM systems. Physically, the module conforms to the 288-pin RDIMM form factor, with DRAM chips organized as 2 Gb × 4 per rank, and is tested and certified compatible with OEM platforms such as Dell PowerEdge, HP ProLiant, Intel, AMD, Supermicro, and more. Many vendors, including Supermicro, also specifically certify it for enhanced reliability in enterprise workloads.
HMAA8GR7CJR4N

Description: This is a 64 GB DDR4‑3200 MT/s RDIMM (Registered DIMM), configured in dual-rank (2Rx ...
Package: TRAY | MOQ: 50 | MPQ: 10

HMAG84EXNRA / This is a 32 GB DDR4‑3200 MT/s RDIMM (Registered DIMM), dual-rank (2R × 4) using a x4 chip configuration and a full 72-bit data path, purpose-built for server and workstation environments. It delivers PC4‑25600 bandwidth (~25.6 GB/s), operates at the low 1.2 V standard for DDR4 memory, and features CAS latency CL22, offering a strong balance of speed and efficiency. The module supports ECC (error-correcting code) and is a registered/buffered DIMM, enhancing reliability and signal integrity in multi-DIMM, high-capacity server setups—it is JEDEC-compliant and RoHS certified. Physically, it conforms to the standard 288-pin RDIMM form factor and is rated for typical commercial operating conditions. Supermicro certification corroborates its compatibility with enterprise-grade systems, and it ships with multi-year warranties when purchased through authorized channels.
HMAG84EXNRA

Description: This is a 32 GB DDR4‑3200 MT/s RDIMM (Registered DIMM), dual-rank (2R × 4) usin ...
Package: TRAY | MOQ: 50 | MPQ: 10

M393A8G40BB4-CWE / This is a 64 GB DDR4‑3200 MT/s RDIMM (Registered DIMM), configured as dual-rank x4 with a full 72‑bit data path, optimized for high-performance server use. It delivers PC4‑25600 bandwidth (~25.6 GB/s) while operating on an energy-efficient 1.2 V supply. The module maintains CAS latency CL22–24, striking a balance between speed and stability. As an enterprise-grade component, it includes ECC error-correction to catch and correct single-bit errors and uses a registered buffer to ensure signal integrity in dense, multi-DIMM server configurations—fully JEDEC-compliant and compatible with major OEM platforms .
M393A8G40BB4-CWE

Description: This is a 64 GB DDR4‑3200 MT/s RDIMM (Registered DIMM), configured as dual-rank x4 w ...
Package: TRAY | MOQ: 50 | MPQ: 10

M393A4K40DB3-CWE / This is a 32 GB DDR4‑3200 MT/s RDIMM (Registered DIMM), featuring a dual-rank, x4 configuration and a 72-bit data path, delivering robust performance tailored for server environments. Operating at PC4‑25600 bandwidth (~25.6 GB/s) and using an energy-efficient 1.2 V supply, it maintains a CAS latency of CL22, balancing speed and responsiveness. The module includes ECC error‑correction and a registered buffer, enhancing data integrity and ensuring signal reliability in multi-DIMM, high-density server systems—fully JEDEC‑compliant and interchangeable across major OEM platforms.
M393A4K40DB3-CWE

Description: This is a 32 GB DDR4‑3200 MT/s RDIMM (Registered DIMM), featuring a dual-rank, x4 co ...
Package: TRAY | MOQ: 30 | MPQ: 10

MTA36ASF8G72PZ-3G2F1 / This is a 64 GB DDR4‑3200 MT/s RDIMM (Registered DIMM), dual‑rank with a 72‑bit data path, delivering high-density performance for server environments. It operates at PC4‑25600 bandwidth (~25.6 GB/s) and utilizes an efficient 1.2 V supply. Featuring CAS latency CL22 (22‑22‑22), it offers balanced speed and quick access times. As an enterprise-grade module, it supports ECC error-correction to catch and fix single-bit memory errors, ensuring data integrity, and includes a registered/buffered architecture to maintain signal stability in high-capacity, multi-DIMM server systems. Physically, the module follows the standard 288‑pin RDIMM form factor and supports industrial operating temperatures from 0 °C to 95 °C, making it robust for demanding environments. Additional technical features include on-board SPD support and temperature monitoring, low-profile design options for rack optimization, and compliance with ECC and RoHS standards.
MTA36ASF8G72PZ-3G2F1

Description: This is a 64 GB DDR4‑3200 MT/s RDIMM (Registered DIMM), dual‑rank with a 72‑bit ...
Package: TRAY | MOQ: 20 | MPQ: 1

MTA36ASF4G72PZ-3G2R1 / This is a 32 GB DDR4-3200 MT/s RDIMM (Registered DIMM), with a 288-pin form factor and dual-rank, 4 G×72-bit configuration. Operating at PC4‑25600 data bandwidth (~25.6 GB/s), it uses a low 1.2 V supply for energy efficiency. With DDR4-3200 timing parameters CL22‑22‑22, it supports fast data rates and improved latency compared to slower DDR4 modules. Key enterprise-grade features include ECC error correction, essential for detecting and correcting single-bit memory errors, ensuring reliability in critical server and workstation environments. The registered (buffered) design includes a register/clock-driver to enhance signal integrity and stability, which is important in multi-DIMM and high-capacity server configurations. Technical specs outline its industrial robustness: it supports an operating temperature up to +95 °C and includes on-board SPD EEPROM and temperature sensor for monitoring. The memory chips are 8 Gb DDR4 components, organized into 16 banks, with full-register and PLL functionality in the RCD to manage clocking and commands
MTA36ASF4G72PZ-3G2R1

Description: This is a 32 GB DDR4-3200 MT/s RDIMM (Registered DIMM), with a 288-pin form factor and ...
Package: TRAY | MOQ: 50 | MPQ: 1

EMI2121MTTAG / Component type: 2‑line common‑mode filter + integrated ESD protection in a compact WDFN8 package (2.2 × 2 mm, 0.75 mm height), Current rating (per line): 100 mA maximum continuous current. DC resistance (per line): Typical 8 Ω, Bandwidth (3 dB cutoff): ≥2 GHz, Common-mode attenuation: Min. 25 dB at 700 MHz, ≥30 dB at 800 MHz, Input capacitance: ~0.8 pF typical (1.3 pF max) — ensures low load on high-speed signals, Reverse‑working voltage: 5 V, Breakdown: 5.5 V min at 1 mA, up to ~9 V max
EMI2121MTTAG

Description: Component type: 2‑line common‑mode filter + integrated ESD protection in a compact WDF ...
Package: T&R | MOQ: 3000 | MPQ: 3000

LTC1968CMS8#TRPBF / A precision true RMS‑to‑DC converter using a delta‑sigma architecture that offers high linearity (typical 0.02 %) and amplitude‑independent bandwidth Delivers ≤ 1 % additional gain error up to 500 kHz and maintains better than 0.1 % up to 150 kHz Operates from 4.5 V to 5.5 V, with typical active current of 2.3 mA and ultralow shutdown current (~0.1 µA) Supports rail‑to‑rail common‑mode input, up to ±1 V peak differential input; output is rail‑to‑rail with a separate reference pin for level‑shifting Linearity error 0.02 %, gain error ~0.1 %, supports crest factors up to 4 with minimal dynamic error Input impedance ≈ 1.2 MΩ; output impedance ≈ 12.5 kΩ (as averaged by on‑chip switched capacitor). Available in 8‑pin MSOP/TSSOP surface‑mount package; comes in both tape‑and‑reel (#TRPBF) and tray (#PBF) options.
LTC1968CMS8#TRPBF

Description: A precision true RMS‑to‑DC converter using a delta‑sigma architecture that offers hi ...
Package: T&R | MOQ: 2500 | MPQ: 2500

IS31AP2005-SLS2-TR / The IS31AP2005-SLS2-TR is a high-efficiency, mono Class-D audio power amplifier from Lumissil Microsystems, designed for portable and battery-powered applications. It delivers up to 2.95 W into a 4 Ω load at 5 V supply with 10% total harmonic distortion plus noise (THD+N), and 1.70 W into an 8 Ω load under the same conditions . Operating over a supply voltage range of 2.7 V to 5.5 V, the amplifier maintains high efficiency, reaching up to 89% at 400 mW with an 8 Ω speaker . Its filter-less PWM architecture eliminates the need for output filters, reducing external component count and simplifying design. The device features differential inputs, integrated pop-and-click suppression circuitry, and short-circuit and thermal protection. Housed in a compact 8-MSOP package, it is suitable for applications such as mobile devices, portable audio equipment, and educational toys.
IS31AP2005-SLS2-TR

Description: The IS31AP2005-SLS2-TR is a high-efficiency, mono Class-D audio power amplifier from Lumis ...
Package: T&R | MOQ: 2500 | MPQ: 2500

IS31AP2005-DLS2-TR / The IS31AP2005-DLS2-TR is a mono, Class D audio power amplifier from Lumissil Microsystems, designed for portable and battery-powered applications. Housed in a compact 8-DFN (3x3 mm) package, it delivers up to 2.95 W into a 4 Ω load with a supply voltage ranging from 2.7 V to 5.5 V. The amplifier features differential inputs, a shutdown function, and integrated pop-and-click suppression circuitry. It operates over a temperature range of -40°C to +85°C, making it suitable for various consumer electronics, including mobile devices and portable audio equipment. The device is RoHS compliant and 100% lead-free.
IS31AP2005-DLS2-TR

Description: The IS31AP2005-DLS2-TR is a mono, Class D audio power amplifier from Lumissil Microsystems ...
Package: T&R | MOQ: 2500 | MPQ: 2500

A21SP16J / The A21SP16J is a compact, high-efficiency Class-D mono audio power amplifier developed by STMicroelectronics. Designed for portable and battery-powered applications, it delivers up to 3 W into a 4 Ω load and 1.75 W into an 8 Ω load at a 5 V supply with 10% total harmonic distortion plus noise (THD+N). For applications requiring lower distortion, it provides 2.3 W into 4 Ω and 1.4 W into 8 Ω at 1% THD+N. Operating over a supply voltage range of 2.4 V to 5.5 V, the amplifier maintains a typical efficiency of 88%, making it ideal for energy-sensitive devices. It features an adjustable gain via external resistors, a low standby current of 10 nA, and a typical operating current of 2 mA at 3 V. The amplifier boasts a signal-to-noise ratio (SNR) of 85 dB and a power supply rejection ratio (PSRR) of 63 dB at 217 Hz with 6 dB gain. With a PWM base frequency of 250 kHz, it ensures efficient audio amplification. Additional features include thermal shutdown protection and low pop & click noise during power transitions. The device is housed in a 9-bump flip-chip package measuring 1.6 mm x 1.6 mm, suitable for compact designs in wearables, mobile devices, and healthcare applications.
A21SP16J

Description: The A21SP16J is a compact, high-efficiency Class-D mono audio power amplifier developed by ...
Package: T&R | MOQ: 5000 | MPQ: 5000

AO4480 / The AO4480 is a dual N-channel MOSFET designed for high-efficiency power switching in compact packages. It operates with a maximum drain-source voltage (VDS) of 30V, making it suitable for low- to medium-voltage applications like DC-DC converters and load switches. Each channel can handle a continuous drain current (ID) up to 8A at a VGS of 10V, and up to 6.5A at 4.5V, providing robust current-handling for compact designs. It features a very low on-resistance (RDS(on)), typically 0.0105ohm at VGS = 10V and 0.0135ohm at VGS = 4.5V, ensuring minimal conduction losses and high efficiency. The gate threshold voltage (VGS(th)) ranges from 0.6V to 1.0V, making it fully logic-level compatible. Fast switching characteristics, low gate charge, and a compact SO-8 package make the AO4480 ideal for power management, synchronous buck converters, and battery-operated equipment.
AO4480

Description: The AO4480 is a dual N-channel MOSFET designed for high-efficiency power switching in comp ...
Package: T&R | MOQ: 3000 | MPQ: 3000

2N7000 / The 2N7000 is an N-channel enhancement-mode MOSFET designed primarily for low-power switching applications. It features a maximum drain-source voltage (VDS) of 60V, allowing it to handle moderate voltage levels. The continuous drain current (ID) is rated at 200 mA, with pulsed currents permissible up to 500 mA, making it suitable for small-load switching. It has a relatively low on-resistance (RDS(on)), typically 1.2 ohms at a gate voltage (VGS) of 10V, contributing to efficient operation with minimal power loss. The gate threshold voltage (VGS(th)) ranges from 0.8V to 3V, meaning it can be turned on with standard logic-level signals. Additionally, the input capacitance is low, around 20–50 pF, enabling fast switching speeds with minimal gate drive requirements. These features make the 2N7000 an ideal choice for digital switching, signal interfacing, and small load driving in both hobbyist and commercial circuits.
2N7000

Description: The 2N7000 is an N-channel enhancement-mode MOSFET designed primarily for low-power switch ...
Package: T&R | MOQ: 10000 | MPQ: 10000

BSS138 / The BSS138 is a widely used N-channel logic-level enhancement-mode MOSFET, ideal for low-voltage, low-current switching applications. Its compact SOT-23 surface-mount package and compatibility with 3.3V and 5V logic levels make it a staple in digital circuits, particularly for level shifting, signal interfacing, and load switching in microcontroller-based systems.
BSS138

Description: The BSS138 is a widely used N-channel logic-level enhancement-mode MOSFET, ideal for low-v ...
Package: T&R | MOQ: 3000 | MPQ: 3000

MMBT5179 / The MMBT5179 is a high-frequency NPN bipolar junction transistor (BJT) designed for low-noise amplification in UHF/VHF frequency ranges. Manufactured by ON Semiconductor, it is optimized for applications such as RF amplifiers, oscillators, and high-frequency signal processing in consumer electronics and communication devices. This transistor operates within a collector current range of 100 μA to 30 mA, making it suitable for both common-emitter and common-base configurations. It features a transition frequency (fT) of up to 2 GHz, ensuring high-speed performance in RF applications. The MMBT5179 offers a low noise figure of 5.0 dB at 200 MHz, which is critical for maintaining signal integrity in sensitive amplification stages. Key electrical characteristics include a collector-emitter voltage (VCEO) of 12 V, collector-base voltage (VCBO) of 20 V, and emitter-base voltage (VEBO) of 2.5 V. It supports a maximum collector current (IC) of 50 mA and a total power dissipation (PD) of 225 mW. The device is housed in a compact SOT-23 surface-mount package, facilitating integration into space-constrained designs. Its operating and storage junction temperature range spans from -55°C to +150°C, ensuring reliability across various environmental conditions.
MMBT5179

Description: The MMBT5179 is a high-frequency NPN bipolar junction transistor (BJT) designed for low-no ...
Package: T&R | MOQ: 3000 | MPQ: 3000

HC32L130J8TA-LQFP48 / The HC32L130J8TA-LQ48 is a 32-bit ultra-low-power microcontroller from HDSC, based on the ARM Cortex-M0+ core, operating at up to 48 MHz. It offers a balance of performance and power efficiency, making it suitable for various embedded applications.
HC32L130J8TA-LQFP48

Description: The HC32L130J8TA-LQ48 is a 32-bit ultra-low-power microcontroller from HDSC, based on the ...
Package: TRAY | MOQ: 1250 | MPQ: 250

HC32L130F8UA-QFN32TR / The HC32L130F8UA-QFN32TR is a 32-bit ultra-low-power microcontroller from HDSC, designed for applications requiring efficient performance in a compact form factor. It features an ARM Cortex-M0+ core operating at up to 48 MHz and supports a wide operating voltage range from 1.8V to 5.5V, making it suitable for various power-sensitive applications.
HC32L130F8UA-QFN32TR

Description: The HC32L130F8UA-QFN32TR is a 32-bit ultra-low-power microcontroller from HDSC, designed f ...
Package: T&R | MOQ: 5000 | MPQ: 5000

HC32L110C6UA-SFN20TR / The HC32L110C6UA-SFN20TR is an ultra-low-power 32-bit microcontroller from HDSC, designed for compact and energy-efficient applications. It features an ARM Cortex-M0+ core operating at up to 32 MHz, offering a balance between performance and power consumption.
HC32L110C6UA-SFN20TR

Description: The HC32L110C6UA-SFN20TR is an ultra-low-power 32-bit microcontroller from HDSC, designed ...
Package: T&R | MOQ: 5000 | MPQ: 5000

HC32L110C6PA-TSSOP20TR / The HC32L110C6PA-TSSOP20TR is a 32-bit ultra-low-power microcontroller from HDSC, designed for applications requiring efficient performance and compact size. Built around the ARM Cortex-M0+ core, it operates at frequencies up to 32 MHz and supports a wide operating voltage range from 1.8V to 5.5V, making it suitable for various power-sensitive applications .
HC32L110C6PA-TSSOP20TR

Description: The HC32L110C6PA-TSSOP20TR is a 32-bit ultra-low-power microcontroller from HDSC, designed ...
Package: T&R | MOQ: 3000 | MPQ: 3000

HC32L072KATA-LQFP64  / The HC32L072KATA-LQFP64 is a 32-bit ultra-low-power microcontroller from HDSC, built around an ARM Cortex-M0+ core operating at up to 48 MHz. It offers 128 KB of Flash memory and 16 KB of SRAM, providing ample space for code and data storage.
HC32L072KATA-LQFP64 

Description: The HC32L072KATA-LQFP64 is a 32-bit ultra-low-power microcontroller from HDSC, built aroun ...
Package: TRAY | MOQ: 1120 | MPQ: 160

HC32F460PETB-LQFP100 / The HC32F460PETB-LQFP100 is a high-performance 32-bit microcontroller from HDSC, featuring an ARM Cortex-M4 core with integrated DSP and FPU capabilities, operating at speeds up to 200 MHz. It offers 512 KB of Flash memory and 192 KB of SRAM, providing ample space for code and data storage. Operating within a voltage range of 1.8V to 3.6V, it supports a wide array of applications .
HC32F460PETB-LQFP100

Description: The HC32F460PETB-LQFP100 is a high-performance 32-bit microcontroller from HDSC, featuring ...
Package: TRAY | MOQ: 1350 | MPQ: 90

HC32F460KETA-LQFP64 / The HC32F460KCTA-LQFP64 is a high-performance 32-bit microcontroller from HDSC, built around an ARM Cortex-M4 core with integrated DSP and FPU capabilities, operating at speeds up to 200 MHz. It features 256 KB of Flash memory and 192 KB of SRAM, providing ample space for code and data storage . Operating within a voltage range of 1.8V to 3.6V, the HC32F460KCTA supports a wide array of applications. It offers a comprehensive set of peripherals, including two 12-bit ADCs with 16 channels each, one programmable gain amplifier (PGA), three voltage comparators, and an on-chip temperature sensor, facilitating precise analog signal processing .
HC32F460KETA-LQFP64

Description: The HC32F460KCTA-LQFP64 is a high-performance 32-bit microcontroller from HDSC, built arou ...
Package: TRAY | MOQ: 1120 | MPQ: 160

HC32F460KCTA-LQFP64 / The HC32F460KCTA-LQFP64 is a high-performance 32-bit microcontroller from HDSC, based on the ARM Cortex-M4 core with integrated DSP and FPU capabilities, operating at speeds up to 200 MHz. It features 256 KB of Flash memory and 192 KB of SRAM, including 32 KB of high-speed RAM and 4 KB of retention RAM, providing ample space for code and data storage .
HC32F460KCTA-LQFP64

Description: The HC32F460KCTA-LQFP64 is a high-performance 32-bit microcontroller from HDSC, based on t ...
Package: TRAY | MOQ: 1120 | MPQ: 160

HC32F460JEUA-QFN48TR / The HC32F460JEUA-QFN48TR is a high-performance 32-bit microcontroller from HDSC, built around an ARM Cortex-M4 core operating at up to 200 MHz. It features 512 KB of Flash memory and 192 KB of SRAM, providing ample space for code and data storage. Operating within a voltage range of 1.8V to 3.6V, it supports a wide array of applications.
HC32F460JEUA-QFN48TR

Description: The HC32F460JEUA-QFN48TR is a high-performance 32-bit microcontroller from HDSC, built aro ...
Package: T&R | MOQ: 3000 | MPQ: 3000

HC32F460JETA-LQFP48 / The HC32F460JETA-LQFP48 is a high-performance 32-bit microcontroller from HDSC, built around an ARM Cortex-M4 core with integrated DSP and FPU capabilities, operating at speeds up to 200 MHz. It offers 512 KB of Flash memory and 192 KB of SRAM, providing ample space for code and data storage. Operating within a voltage range of 1.8V to 3.6V, it supports a wide array of applications.
HC32F460JETA-LQFP48

Description: The HC32F460JETA-LQFP48 is a high-performance 32-bit microcontroller from HDSC, built arou ...
Package: TRAY | MOQ: 1000 | MPQ: 250

HC32F072JATA-LQ48 / The HC32F072JATA-LQ48 is a high-performance 32-bit microcontroller from HDSC, based on the ARM Cortex-M0+ core running at up to 48 MHz. It features 128 KB of Flash memory and 16 KB of SRAM, providing ample space for code and data storage. Operating within a voltage range of 1.8V to 5.5V, it supports a wide array of applications. The microcontroller includes a 12-bit ADC with 17 channels, two 12-bit DACs, and three operational amplifiers, facilitating precise analog signal processing. Communication interfaces comprise two UARTs, two I2Cs, two SPIs, and a CAN 2.0B controller, ensuring versatile connectivity options. Additional features include seven general-purpose timers, AES hardware acceleration supporting 128/192/256-bit keys, a true random number generator (TRNG), and a USB 2.0 full-speed device interface. The device is housed in a 48-pin LQFP package, making it suitable for applications requiring a balance of performance and compactness .
HC32F072JATA-LQ48

Description: The HC32F072JATA-LQ48 is a high-performance 32-bit microcontroller from HDSC, based on the ...
Package: TRAY | MOQ: 1000 | MPQ: 250

HC32F005C6UA-SFN20TR / The HC32F005C6UA-SFN20TR is a 32-bit microcontroller developed by HDSC, featuring an ARM Cortex-M0+ core operating at up to 32 MHz. It offers 32 KB of Flash memory and 4 KB of SRAM, providing sufficient space for code and data storage. The microcontroller operates within a voltage range of 1.8V to 5.5V, making it suitable for various applications. It includes a 12-bit ADC for analog signal processing, supports communication interfaces such as UART, I2C, and SPI, and incorporates six 16-bit timers for precise timing operations. The device is housed in a compact 20-pin QFN package measuring 3x3 mm, facilitating integration into space-constrained designs. Its low-power consumption and versatile features make it ideal for applications requiring efficient performance and compact form factors.
HC32F005C6UA-SFN20TR

Description: The HC32F005C6UA-SFN20TR is a 32-bit microcontroller developed by HDSC, featuring an ARM C ...
Package: T&R | MOQ: 5000 | MPQ: 5000

HC32F005C6PA-TSSOP20T / The HC32F005C6PA-TSSOP20T is a 32-bit microcontroller from HDSC, built around an ARM Cortex-M0+ core operating at up to 32 MHz. It features 32 KB of Flash memory and 4 KB of SRAM, providing ample space for code and data storage. The microcontroller operates within a voltage range of 1.8V to 5.5V, making it suitable for various applications. It includes a 12-bit ADC with 9 channels, two UART interfaces, one I2C interface, and one SPI interface, facilitating versatile communication options. Additionally, it offers six general-purpose timers, two voltage comparators, and supports low-power operation modes, including a deep sleep mode consuming as low as 5 µA at 3V. The device is packaged in a 20-pin TSSOP package, making it compact for space-constrained designs.
HC32F005C6PA-TSSOP20T

Description: The HC32F005C6PA-TSSOP20T is a 32-bit microcontroller from HDSC, built around an ARM Corte ...
Package: TUBE | MOQ: 74 | MPQ: 2220

B72540E0300K062 / The B72540E0300K062 is a multilayer varistor (MLV) from EPCOS/TDK, designed for surface-mount applications in a 2220 (5750 metric) package. It offers a nominal varistor voltage of 47 V, with a tolerance range between 42.3 V and 51.7 V. The device can handle maximum continuous voltages of 30 V AC and 38 V DC, and it clamps transient voltages at up to 77 V. It supports a peak surge current of 1.2 kA (8/20 μs waveform) and has an energy absorption capacity of 12 J. With a typical capacitance of 4000 pF at 1 MHz, it is suitable for high-frequency applications. The varistor operates over a temperature range from -55°C to +125°C and complies with AEC-Q200 standards, making it ideal for automotive and other high-reliability applications .
B72540E0300K062

Description: The B72540E0300K062 is a multilayer varistor (MLV) from EPCOS/TDK, designed for surface-mo ...
Package: T&R | MOQ: 5000 | MPQ: 1000

B72500E0140K060 / The B72500E0140K060 is a multilayer varistor (MLV) from EPCOS/TDK, designed for surface-mount applications in a compact 0603 (1.6 mm × 0.8 mm) package. It offers a nominal varistor voltage of 22 V, with a tolerance range between 19.8 V and 24.2 V. The device can handle maximum continuous voltages of 14 V AC and 18 V DC, and it clamps transient voltages at up to 40 V. It supports a peak surge current of 30 A (8/20 μs waveform) and has an energy absorption capacity of 0.2 J. With a typical capacitance of 100 pF at 1 MHz, it is suitable for high-frequency applications. The varistor operates over a wide temperature range from -55°C to +150°C and complies with AEC-Q200 standards, making it ideal for automotive and other high-reliability applications .
B72500E0140K060

Description: The B72500E0140K060 is a multilayer varistor (MLV) from EPCOS/TDK, designed for surface-mo ...
Package: T&R | MOQ: 8000 | MPQ: 4000

SRP1265A-3R3M / The SRP1265A-3R3M is a high-performance surface-mount power inductor from Bourns, designed for demanding power applications such as automotive electronics, DC-DC converters, and LED drivers. It offers a nominal inductance of 3.3 µH with a tolerance of ±20%, making it suitable for high-current filtering and energy storage in compact designs.
SRP1265A-3R3M

Description: The SRP1265A-3R3M is a high-performance surface-mount power inductor from Bourns, designed ...
Package: T&R | MOQ: 5000 | MPQ: 500

VLS6045EX-1R0N / The TDK VLS6045EX-1R0N is a compact, surface-mount power inductor optimized for high-efficiency DC-DC converters and power management circuits in consumer electronics. It offers a nominal inductance of 1.0 µH ±30% at 100 kHz, making it suitable for high-frequency switching applications. The inductor supports a maximum saturation current of 12 A (defined by a 30% drop in inductance) and a rated current of 6 A (based on a 40°C temperature rise), ensuring robust performance under varying load conditions. With a low DC resistance of 12 mΩ typical (16 mΩ max), it minimizes power losses, enhancing overall system efficiency. Constructed with a ferrite core and magnetic shielding, the VLS6045EX-1R0N effectively suppresses electromagnetic interference (EMI), making it ideal for noise-sensitive environments. Its compact dimensions of 6.0 mm × 6.0 mm × 4.5 mm and surface-mount design facilitate high-density PCB layouts. Operating within a temperature range of –40°C to +105°C, this RoHS-compliant inductor is well-suited for a variety of industrial and consumer applications.
VLS6045EX-1R0N

Description: The TDK VLS6045EX-1R0N is a compact, surface-mount power inductor optimized for high-effic ...
Package: T&R | MOQ: 4500 | MPQ: 1500

SRP6540-2R2M / The SRP6540-2R2M is a surface-mount shielded power inductor from Bourns, designed for high-efficiency power applications such as DC-DC converters, LED drivers, and automotive electronics. It features a nominal inductance of 2.2 µH with a tolerance of ±20%, and supports a rated current of 9 A, making it suitable for applications requiring moderate inductance and high current handling. The inductor exhibits a low DC resistance (DCR) of 15.5 mΩ, minimizing power losses and enhancing overall efficiency. Constructed with a powdered iron core, it offers excellent magnetic shielding, reducing electromagnetic interference (EMI) in sensitive circuits. The component operates effectively over a wide temperature range from –55°C to +125°C, ensuring reliability in various environmental conditions. Its compact dimensions of 7.2 mm × 6.5 mm × 4.0 mm make it ideal for space-constrained designs. The SRP6540-2R2M is RoHS compliant and halogen-free, aligning with environmental and safety standards.
SRP6540-2R2M

Description: The SRP6540-2R2M is a surface-mount shielded power inductor from Bourns, designed for high ...
Package: T&R | MOQ: 1200 | MPQ: 1200

CIGT252010EH1R0MNE / The CIGT252010EH1R0MNE is a compact surface-mount power inductor from TDK, designed for use in high-frequency power supply circuits and DC-DC converters. It features a nominal inductance of 1.0 µH with a ±20% tolerance, offering stable performance in switching applications. The component supports a rated current of approximately 4.5 A, with a saturation current around 5.5 A, ensuring effective energy storage and minimal core saturation under heavy load conditions. Its DC resistance (DCR) is low—typically around 26 mΩ—helping reduce power loss and enhance efficiency in power regulation circuits. Encased in a 2.5 mm × 2.0 mm × 1.0 mm package (252010 size), the inductor is optimized for space-constrained designs while maintaining excellent thermal and electrical reliability. It operates within a wide temperature range of –40°C to +125°C, making it suitable for consumer electronics, automotive systems, and industrial applications where high efficiency and compactness are essential.
CIGT252010EH1R0MNE

Description: The CIGT252010EH1R0MNE is a compact surface-mount power inductor from TDK, designed for us ...
Package: T&R | MOQ: 3000 | MPQ: 3000

744786139A / The 744786139A is a high-performance SMT (Surface Mount Technology) common mode choke from Würth Elektroniks WE-CMB series, specifically engineered for efficient suppression of common mode noise in power and signal lines. It features an inductance of 390 µH and supports a rated current of 2 A, making it well-suited for applications that demand both strong filtering and moderate current handling. The component exhibits low DC resistance, typically around 180 mΩ, which minimizes power losses and heat generation. It delivers effective common mode noise attenuation across a broad frequency range, particularly in the MHz spectrum, which is essential for maintaining signal integrity in high-speed data or switching power applications. With a high isolation voltage and excellent thermal stability, the 744786139A operates reliably over a wide temperature range from –40°C to +125°C. It is ideal for use in applications such as USB interfaces, CAN bus systems, and power line communications, where compact size and high EMI suppression are critical.
744786139A

Description: The 744786139A is a high-performance SMT (Surface Mount Technology) common mode choke from ...
Package: T&R | MOQ: 4000 | MPQ: 4000

ACM4520-142-2P-T000 / The ACM4520-142-2P-T000 is a surface-mount common mode choke designed for noise suppression in power and signal lines, particularly effective in EMI filtering applications. It features a rated current of 2 A and a DC resistance of approximately 0.07 ohms, ensuring low power loss while maintaining effective suppression. The choke operates over a wide frequency range, providing strong impedance characteristics particularly in the MHz range, which helps to attenuate common mode noise without significantly affecting differential signals. With an inductance of 1.4 mH, it offers robust filtering capabilities for both power supply and high-speed data lines. The component is housed in a compact 4.5 mm × 4.7 mm × 2.0 mm package, ideal for high-density PCB layouts. It also exhibits excellent temperature stability and can operate in a broad temperature range, typically from –40°C to +125°C, making it suitable for a wide variety of industrial, automotive, and consumer electronics applications.
ACM4520-142-2P-T000

Description: The ACM4520-142-2P-T000 is a surface-mount common mode choke designed for noise suppressio ...
Package: T&R | MOQ: 1600 | MPQ: 800

431KD10-O / The 431KD10-O varistor is a metal oxide varistor (MOV) designed to protect electronic circuits from voltage surges and transient spikes. With a disc diameter of 10 mm and a clamping voltage tailored for 431V applications, it provides reliable overvoltage protection in a compact form factor. The
431KD10-O

Description: The 431KD10-O varistor is a metal oxide varistor (MOV) designed to protect electronic circ ...
Package: BULK | MOQ: 1000 | MPQ: 500

VC0603K300R020 / The KEMET VC0603K300R020 is a compact, surface-mount multilayer varistor (MLV) designed to protect sensitive electronic circuits from transient voltage events such as electrostatic discharge (ESD), lightning-induced surges, and inductive load switching. Housed in a 0603 (1608 metric) package, this varistor is ideal for space-constrained applications in automotive, industrial, and consumer electronics. Voltage Ratings: Maximum DC voltage of 26 V and AC voltage of 20 V. Varistor Voltage: Typical varistor voltage of 33 V, with a minimum of 29.7 V and a maximum of 36.3 V. Clamping Voltage: Clamps transient voltages at 54 V when subjected to a 1 A current pulse (8/20 µs waveform). Surge Current Capability: Can withstand peak surge currents up to 30 A (8/20 µs waveform). Energy Absorption: Capable of absorbing up to 0.3 J of energy (10/1000 µs waveform). Capacitance: Exhibits a capacitance of 175 pF at 1 kHz, suitable for high-speed data line protection. Operating Temperature Range: Operates reliably within a temperature range of -55°C to +125°C. Automotive Qualification: Meets AEC-Q200 standards, ensuring suitability for automotive applications.
VC0603K300R020

Description: The KEMET VC0603K300R020 is a compact, surface-mount multilayer varistor (MLV) designed to ...
Package: T&R | MOQ: 3500 | MPQ: 3500

NCP115ASN330T2G / The NCP115ASN330T2G is a high-performance, fixed 3.3V low-dropout (LDO) linear voltage regulator from onsemi, engineered for applications demanding low noise, high power supply rejection ratio (PSRR), and energy efficiency. It delivers up to 300 mA of output current with a typical dropout voltage of 235 mV at full load, ensuring stable operation even with low input voltages. The device operates over an input voltage range of 1.7 V to 5.5 V, making it versatile for various power supply configurations.
NCP115ASN330T2G

Description: The NCP115ASN330T2G is a high-performance, fixed 3.3V low-dropout (LDO) linear voltage reg ...
Package: T&R | MOQ: 3000 | MPQ: 3000

AZV331KTR-G1 / The AZV331KTR-G1 is a single-channel, low-voltage comparator from Diodes Incorporated, designed for general-purpose applications in compact and power-sensitive systems. Operating over a supply voltage range of 2.5V to 5.5V, it maintains a low typical supply current of 60µA, making it ideal for battery-powered devices. The comparator features an open-collector output, allowing for flexible interfacing with various logic levels and the ability to wire multiple outputs together. With a maximum input offset voltage of 7mV and a typical propagation delay of 450ns, it ensures accurate and timely signal comparisons. The device is housed in a compact SOT-23-5 package, suitable for space-constrained designs, and operates reliably across a temperature range of -40°C to +85°C. Its low output saturation voltage and compatibility with ground-referenced signals further enhance its versatility in diverse electronic applications.
AZV331KTR-G1

Description: The AZV331KTR-G1 is a single-channel, low-voltage comparator from Diodes Incorporated, des ...
Package: T&R | MOQ: 3000 | MPQ: 3000













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