All Products Transistor

STGW30NC120HD / IGBT 1200 V 60 A 220 W Through Hole TO-247-3, The STGW30NC120HD is a high-performance N-channel Insulated Gate Bipolar Transistor (IGBT) from STMicroelectronics, designed for high-frequency applications.
STGW30NC120HD

Description: IGBT 1200 V 60 A 220 W Through Hole TO-247-3, The STGW30NC120HD is a high-performance N-ch ...
Package: TUBE | MOQ: 510 | MPQ: 30

STGW20NC60VD / IGBT 600 V 60 A 200 W Through Hole TO-247-3, The STGW20NC60VD is a very fast Insulated Gate Bipolar Transistor (IGBT) from STMicroelectronics, designed for high-frequency applications.
STGW20NC60VD

Description: IGBT 600 V 60 A 200 W Through Hole TO-247-3, The STGW20NC60VD is a very fast Insulated Gat ...
Package: TUBE | MOQ: 510 | MPQ: 30

MJD127T4 / Darlington PNP Transistor BJT (Bipolar) 100V 8A 20W Surface Mount DPAK The MJD127T4 is suitable for applications requiring high current handling and voltage capabilities, such as audio amplifiers, power supplies, and motor control circuits. Its high DC current gain ensures efficient operation, while the monolithic construction with built-in base-emitter shunt resistors enhances thermal stability and reliability. The device wide operating temperature range makes it suitable for various industrial and commercial applications. The MJD127T4 is available in a DPAK package, facilitating surface-mount assembly.
MJD127T4

Description: Darlington PNP Transistor BJT (Bipolar) 100V 8A 20W Surface Mount DPAK The MJD127T4 is sui ...
Package: T&R | MOQ: 2500 | MPQ: 2500

MJD122T4G / Darlington NPN Transistor BJT(Bipolar) 100V 8A 20W Surface Mount DPAK. The MJD122T4 is suitable for applications requiring high current handling and voltage capabilities, such as audio amplifiers, power supplies, and motor control circuits. Its high DC current gain ensures efficient operation, while the monolithic construction with a built-in base-emitter shunt resistor enhances thermal stability and reliability.
MJD122T4G

Description: Darlington NPN Transistor BJT(Bipolar) 100V 8A 20W Surface Mount DPAK. The MJD122T4 is sui ...
Package: T&R | MOQ: 2500 | MPQ: 2500

MJ11016G / Darlington 120 V 30 A 4MHz 200 W Through Hole TO-204/TO-3, The MJ11016G is suitable for applications requiring high current handling and voltage capabilities, such as audio amplifiers, power supplies, and motor control circuits. Its high DC current gain ensures efficient operation, while the monolithic construction with a built-in base-emitter shunt resistor enhances thermal stability and reliability. The device wide operating temperature range makes it suitable for various industrial and commercial applications.
MJ11016G

Description: Darlington 120 V 30 A 4MHz 200 W Through Hole TO-204/TO-3, The MJ11016G is suitable for ap ...
Package: TRAY | MOQ: 1000 | MPQ: 100

IRL540NPBF / N-Channel 100V 36A 140W Through Hole TO-220-3, 44mOhm @18A, 10V
IRL540NPBF

Description: N-Channel 100V 36A 140W Through Hole TO-220-3, 44mOhm @18A, 10V ...
Package: TUBE | MOQ: 1000 | MPQ: 50

IRL1004PBF / Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
IRL1004PBF

Description: Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced proc ...
Package: TUBE | MOQ: 1000 | MPQ: 50

IRFZ44NPBF / The IRFZ44N is an N-channel power MOSFET designed for high-current switching applications. It features a drain-source voltage rating of 55 V and a continuous drain current up to 49 A under proper thermal conditions. The device offers low on-resistance (Rds(on)) typically around 0.017–0.028 Ω, enabling efficient power switching with reduced conduction losses. It requires a gate drive voltage of around 10 V for optimal performance and provides fast switching characteristics suitable for high-frequency applications. The IRFZ44N is commonly used in motor control, DC-DC converters, power supplies, inverters, and switching circuits in industrial and consumer electronic systems.
IRFZ44NPBF

Description: The IRFZ44N is an N-channel power MOSFET designed for high-current switching applications. ...
Package: TUBE | MOQ: 1000 | MPQ: 50

IRFPG50PBF / N-Channel 1000V 6.1A 190W Through Hole TO-247-3, 2Ohm @3.6A 10V Rds On (Max) @ Id, Vgs
IRFPG50PBF

Description: N-Channel 1000V 6.1A 190W Through Hole TO-247-3, 2Ohm @3.6A 10V Rds On (Max) @ Id, Vgs ...
Package: TUBE | MOQ: 1000 | MPQ: 25

IRFP460APBF / N-Channel 500V 20A 280W Through Hole TO-247-3, 4V @250µA
IRFP460APBF

Description: N-Channel 500V 20A 280W Through Hole TO-247-3, 4V @250µA ...
Package: TUBE | MOQ: 1000 | MPQ: 25

IRFP450APBF / N-Channel 500V 14A 190W Through Hole TO-247-3, 4V @250µA Vgs(th), 400mOhm @8.4A 10VRds On (Max)
IRFP450APBF

Description: N-Channel 500V 14A 190W Through Hole TO-247-3, 4V @250µA Vgs(th), 400mOhm @8.4A 10VRds On ...
Package: TUBE | MOQ: 1000 | MPQ: 25

IRFP4321PBF / N-Channel 150V 78A 310W Through Hole TO-247-3, 5V @250µA
IRFP4321PBF

Description: N-Channel 150V 78A 310W Through Hole TO-247-3, 5V @250µA ...
Package: TUBE | MOQ: 1000 | MPQ: 25

IRFP3710PBF / N-Channel 100V 57A 200W Through Hole TO-247-3, 3000pF @25V, 25mOhm @28A, 10V
IRFP3710PBF

Description: N-Channel 100V 57A 200W Through Hole TO-247-3, 3000pF @25V, 25mOhm @28A, 10V ...
Package: TUBE | MOQ: 1000 | MPQ: 25

IRFP260N / N-Channel 200 V 50A (Tc) 300W (Tc) Through Hole TO-247AC, 4V @250µA Vgs(th)
IRFP260N

Description: N-Channel 200 V 50A (Tc) 300W (Tc) Through Hole TO-247AC, 4V @250µA Vgs(th) ...
Package: TUBE | MOQ: 1000 | MPQ: 25

IRFP250NPBF / N-Channel 200 V 30A (Tc) 214W (Tc) Through Hole TO-247AC, 75mOhm @18A, 10V
IRFP250NPBF

Description: N-Channel 200 V 30A (Tc) 214W (Tc) Through Hole TO-247AC, 75mOhm @18A, 10V ...
Package: TUBE | MOQ: 1000 | MPQ: 25

IRF9540NPBF / P-Channel 100 V 23A (Tc) 140W (Tc) Through Hole TO-220-3, 117mOhm @11A, 10V, 4V @250µA, 97 nC @10V
IRF9540NPBF

Description: P-Channel 100 V 23A (Tc) 140W (Tc) Through Hole TO-220-3, 117mOhm @11A, 10V, 4V @250µA, 9 ...
Package: TUBE | MOQ: 1000 | MPQ: 50

IRF830PBF / The IRF830PBF is a robust <strong>N-channel power MOSFET</strong> developed by <strong>Infineon Technologies</strong>, designed for <strong>high-voltage switching applications</strong> and power conversion systems. It features a maximum drain-to-source voltage of <strong>500V</strong>, making it suitable for offline and AC-powered designs. <br><br>This device is optimized for <strong>fast switching performance</strong> and reliable operation in demanding environments, commonly used in switch-mode power supplies (SMPS), flyback converters, and high-voltage DC-DC converters. <br><br>The IRF830PBF offers a balanced combination of <strong>low gate charge and efficient switching characteristics</strong>, helping to reduce switching losses and improve overall system efficiency in power electronics applications. <br><br>With its rugged design and high avalanche energy capability, the device ensures <strong>reliable operation under transient and overload conditions</strong>, making it suitable for industrial and consumer power systems. <br><br>The MOSFET operates with standard gate drive requirements and is compatible with a wide range of control circuits, including PWM controllers and discrete driver stages. <br><br>Packaged in a durable <strong>TO-220AB through-hole form factor</strong>, the IRF830PBF provides excellent thermal dissipation and ease of mounting, supporting both prototyping and production environments. <br><br>The <strong>IRF830PBF</strong> is widely used in applications such as <strong>switch-mode power supplies, LED drivers, AC-DC converters, battery chargers, and industrial power control systems</strong>, where high-voltage and reliable switching performance is essential.
IRF830PBF

Description: The IRF830PBF is a robust N-channel power MOSFET developed by Inf ...
Package: TUBE | MOQ: 1000 | MPQ: 50

IRF540NPBF / The IRF540N is an N-channel power MOSFET designed for high-voltage and high-current switching applications. It features a drain-source voltage rating of 100 V and a continuous drain current up to approximately 33 A under proper thermal conditions. The device offers low on-resistance (Rds(on)) typically around 0.044 Ω, enabling efficient power switching with reduced conduction losses. It requires a gate drive voltage of around 10 V for optimal performance and provides fast switching characteristics suitable for switching regulators and power control circuits. The IRF540N is widely used in power supplies, motor control, DC-DC converters, inverters, and industrial switching applications.
IRF540NPBF

Description: The IRF540N is an N-channel power MOSFET designed for high-voltage and high-current switch ...
Package: TUBE | MOQ: 2000 | MPQ: 50

IRF3205 / The IRF3205 is a high-current N-channel power MOSFET designed for efficient switching applications. It features a drain-source voltage rating of 55 V and supports very high continuous drain current up to approximately 110 A under proper thermal conditions. The device offers very low on-resistance (Rds(on)) typically around 0.008 Ω, minimizing conduction losses and improving efficiency in power circuits. It requires a gate drive voltage of around 10 V for optimal performance and provides fast switching characteristics suitable for high-current applications. The IRF3205 is widely used in motor control, DC-DC converters, power supplies, battery management systems, and high-power switching applications.
IRF3205

Description: The IRF3205 is a high-current N-channel power MOSFET designed for efficient switching appl ...
Package: TUBE | MOQ: 1000 | MPQ: 50

IRF2807 / N-Channel 75 V 82A (Tc) 230W (Tc) Through Hole TO-220AB, Advanced Process Technology, Ultra Low On-Resistance, Dynamic dv/dt Rating
IRF2807

Description: N-Channel 75 V 82A (Tc) 230W (Tc) Through Hole TO-220AB, Advanced Process Technology, Ultr ...
Package: TUBE | MOQ: 1000 | MPQ: 50

IRFS23N20D / IRFS23N20D MOSfet VDS=200V, ID=52A, RDS(ON)<60mΩ@VGS=10V This N-Channel MOSFET uses advanced Planar technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
IRFS23N20D

Description: IRFS23N20D MOSfet VDS=200V, ID=52A, RDS(ON) ...
Package: | MOQ: | MPQ:

IRF7406 / The IRF7406 is a compact and efficient <strong>N-channel power MOSFET</strong> developed by <strong>Infineon Technologies</strong>, optimized for low-voltage switching and power management applications. It features a low <strong>RDS(on)</strong> which minimizes conduction losses and enhances overall system efficiency. <br><br>This device is designed for <strong>logic-level gate drive operation</strong>, enabling direct control from low-voltage digital circuits such as microcontrollers and embedded systems without the need for additional gate driving circuitry. <br><br>The IRF7406 supports a maximum drain-to-source voltage of <strong>30V</strong> and is capable of handling moderate to high current loads, making it suitable for DC-DC converters, load switching, and power regulation tasks. <br><br>With <strong>fast switching performance and low gate charge</strong>, it is well-suited for high-frequency applications, improving efficiency in switching regulators and PWM-based designs. <br><br>Housed in a space-saving <strong>SO-8 surface-mount package</strong>, the IRF7406 is ideal for compact PCB layouts and high-density electronic designs. <br><br>The <strong>IRF7406</strong> is commonly used in applications such as <strong>portable electronics, power supplies, battery-powered devices, load switches, and embedded control systems</strong>, where efficient and reliable switching performance is essential.
IRF7406

Description: The IRF7406 is a compact and efficient N-channel power MOSFET developed b ...
Package: T&R | MOQ: 3000 | MPQ: 3000

IRLB8721 / The IRLB8721 is a high-efficiency <strong>N-channel power MOSFET</strong> developed by <strong>Infineon Technologies</strong>, designed for low-voltage and high-current switching applications. It features an ultra-low <strong>RDS(on)</strong>, enabling minimal conduction losses and improved overall system efficiency. <br><br>This device is optimized for <strong>logic-level gate drive operation</strong>, allowing it to be fully enhanced with low gate voltages typically provided by microcontrollers such as Arduino and other digital control systems. This makes it ideal for direct interfacing without the need for additional gate drivers. <br><br>The IRLB8721 supports a maximum drain-to-source voltage of <strong>30V</strong> and is capable of handling high continuous drain currents, making it suitable for power management, motor control, and load switching applications. <br><br>With its <strong>fast switching characteristics</strong> and low gate charge, the device ensures efficient performance in high-frequency switching circuits such as DC-DC converters and PWM-based systems. <br><br>Packaged in a robust <strong>TO-220AB through-hole form factor</strong>, the IRLB8721 provides excellent thermal performance and ease of mounting, making it suitable for both prototyping and industrial applications. <br><br>The <strong>IRLB8721</strong> is widely used in applications such as <strong>motor drivers, LED dimmers, power supplies, battery management systems, and embedded control designs</strong>, where reliable and efficient power switching is required.
IRLB8721

Description: The IRLB8721 is a high-efficiency N-channel power MOSFET developed by ...
Package: TUBE | MOQ: 1000 | MPQ: 50

IRFHM4234 / The IRFHM4234 is a high-efficiency <strong>N-channel power MOSFET</strong> developed by <strong>Infineon Technologies</strong>, designed for low-voltage, high-current switching applications such as DC-DC converters and power management systems. It features a <strong>maximum drain-source voltage of 25V</strong> and supports high current capability (up to ~40A continuous depending on thermal conditions), making it ideal for modern high-density power designs. One of its key advantages is the extremely <strong>low RDS(on) (as low as ~4.4 mΩ)</strong>, which significantly reduces conduction losses and improves overall efficiency in power conversion circuits. The device is built using advanced <strong>trench MOSFET technology (FastIRFET™)</strong>, offering: <strong>Low gate charge (~8.2 nC)</strong> → faster switching <strong>Low thermal resistance (~4.4 °C/W)</strong> → improved heat dissipation <strong>High power density</strong> in compact layouts It operates with a <strong>gate-source voltage up to ±20V</strong> and supports efficient switching even at logic-level drive voltages (e.g., 4.5V), making it suitable for modern low-voltage controllers. The compact <strong>PQFN 3.3 × 3.3 mm package</strong> enables space-saving PCB designs while maintaining strong thermal performance, ideal for high-frequency switching applications.
IRFHM4234

Description: The IRFHM4234 is a high-efficiency N-channel power MOSFET developed by ...
Package: T&R | MOQ: 4000 | MPQ: 4000

IRFZ24N / The IRFZ24N is a robust and widely used <strong>N-channel power MOSFET</strong> developed by <strong>Infineon Technologies (formerly International Rectifier)</strong>, designed for efficient power switching and amplification in a wide range of electronic applications. It is part of the well-known <strong>HEXFET power MOSFET family</strong>, optimized for low conduction losses and fast switching performance. <br><br>The device supports a maximum <strong>drain-source voltage of 55V</strong> and a continuous drain current of up to <strong>17A</strong>, making it suitable for medium-power switching applications such as motor control, DC-DC converters, and power supplies. <br><br>It features a low <strong>RDS(on) of approximately 0.07Ω</strong>, which helps reduce conduction losses and improve overall efficiency in power circuits. <br><br>The IRFZ24N offers <strong>fast switching characteristics and high avalanche ruggedness</strong>, ensuring reliable operation under dynamic load conditions and inductive switching environments. <br><br>With a <strong>gate-source voltage rating of ±20V</strong> and a typical threshold voltage around <strong>2V–4V</strong>, it can be driven by standard gate driver circuits and is suitable for many logic-level control applications. <br><br>Housed in a durable <strong>TO-220 through-hole package</strong>, the device allows efficient heat dissipation and easy mounting with heatsinks, making it ideal for both prototyping and industrial designs. <br><br>The <strong>IRFZ24N</strong> is widely used in applications such as <strong>motor drivers, switching power supplies, DC-DC converters, LED drivers, battery management systems, and general-purpose power control circuits</strong>, where high efficiency and reliability are essential.
IRFZ24N

Description: The IRFZ24N is a robust and widely used N-channel power MOSFET developed ...
Package: TUBE | MOQ: 1000 | MPQ: 50

DMN6040SSDQ-13 / The DMN6040SSDQ-13 is a high-efficiency <strong>dual N-channel enhancement mode MOSFET</strong> developed by <strong>Diodes Incorporated</strong>, designed for power management and switching applications requiring low conduction losses and fast switching performance. It integrates two independent MOSFETs in a single compact package, enabling space-saving circuit designs. <br><br>The device supports a <strong>drain-source voltage of 60V</strong> and a <strong>continuous drain current of up to 5A per channel</strong>, making it suitable for medium-power switching applications such as DC-DC converters and load switching circuits. <br><br>It features a <strong>low on-resistance (RDS(on)) of approximately 40mΩ at VGS = 10V</strong>, which helps minimize power dissipation and improves overall system efficiency. <br><br>The MOSFET is optimized for <strong>fast switching speed and low input capacitance</strong>, enabling high-frequency operation and efficient power conversion in modern electronic systems. <br><br>The device operates with a <strong>gate-source voltage range up to ±20V</strong> and offers robust performance across a wide temperature range of <strong>-55°C to +150°C</strong>, ensuring reliability in demanding environments. <br><br>Housed in a compact <strong>SOIC-8 surface-mount package</strong>, the DMN6040SSDQ-13 is optimized for automated assembly and high-density PCB layouts. It is also <strong>AEC-Q101 qualified</strong>, making it suitable for automotive-grade applications. <br><br>The <strong>DMN6040SSDQ-13</strong> is widely used in applications such as <strong>DC-DC converters, power management circuits, LED backlighting, load switching, and automotive electronics</strong>, where high efficiency, compact size, and reliable switching performance are required.
DMN6040SSDQ-13

Description: The DMN6040SSDQ-13 is a high-efficiency dual N-channel enhancement mode MOSFET ...
Package: T&R | MOQ: 2500 | MPQ: 2500

BTS4140NHUMA1 / The BTS4140NHUMA1 is a smart high-side power switch from Infineon Technologies, part of the PROFET™ family, designed for driving resistive, inductive, and capacitive loads in automotive and industrial applications. It integrates a power MOSFET with advanced protection and diagnostic features, enabling reliable and efficient load control. This single-channel device supports a load current of up to approximately 4 A and operates over a wide voltage range, making it ideal for 12 V and 24 V systems. It includes built-in protection features such as overcurrent limitation, thermal shutdown, overvoltage protection, and short-circuit protection, ensuring safe operation under fault conditions. <br><br> The BTS4140NHUMA1 also provides diagnostic feedback via a status output pin, allowing real-time monitoring of load conditions. Its low on-resistance minimizes power losses, improving system efficiency. <br><br> Packaged in a compact SOT-223 surface-mount package, this device is optimized for space-constrained designs and automated assembly. It is widely used in automotive electronics, including lighting systems, relays, solenoids, and actuator control, as well as in industrial load switching applications. <br> Power Switch/Driver 1:1 N-Channel 200mA PG-SOT223-4, BTS4140NINCT, BTS4140, BTS4140NHUMA1DKR, BTS4140NT, BTS4140NXT, BTS4140NHUMA1TR, BTS4140NINCT, BTS4140NINDKR, BTS4140NT, BTS4140NINDKR, BTS4140NINTR, SP000272323, BTS4140NINCT, BTS4140NINTR, BTS4140N, BTS4140NINTR, BTS4140NHUMA1CT, BTS4140NINDKR-NDR
BTS4140NHUMA1

Description: The BTS4140NHUMA1 is a smart high-side power switch from Infineon Technologies, part of th ...
Package: T&R | MOQ: 4000 | MPQ: 4000

BDW94C / The BDW94C is a high-voltage PNP Darlington power transistor from STMicroelectronics, designed for applications requiring high current gain and efficient high-side switching. It integrates two transistors in a Darlington configuration, providing very high DC current gain (hFE), which allows large load currents to be controlled with minimal base drive. <br><br> This device supports a collector-emitter voltage of up to 100 V and a continuous collector current of up to 12 A, making it suitable for demanding power control applications. Built-in base-emitter resistors simplify circuit design and enhance switching behavior. <br><br> Housed in a TO-220 through-hole package, the BDW94C provides excellent thermal performance and supports the use of external heat sinks for high power dissipation. It is commonly used in complementary push-pull configurations with NPN counterparts (such as BDW93C), motor control circuits, audio amplifiers, power supplies, and industrial switching systems.
BDW94C

Description: The BDW94C is a high-voltage PNP Darlington power transistor from STMicroelectronics, desi ...
Package: TUBE | MOQ: 1000 | MPQ: 50

BDW93C / Bipolar (BJT) Transistor NPN - DarliThe BDW93C is a high-voltage NPN Darlington power transistor from STMicroelectronics, designed for applications requiring high current gain and efficient switching. By integrating two transistors in a Darlington configuration, it provides very high DC current gain (hFE), allowing it to be driven with low base current while controlling large collector currents. <br><br> This device supports a collector-emitter voltage of up to 100 V and a continuous collector current of up to 12 A, making it suitable for demanding power applications. It also features built-in base-emitter resistors, simplifying circuit design and improving switching performance. <br><br> The BDW93C is housed in a TO-220 through-hole package, offering excellent thermal performance and easy mounting with heat sinks for high-power dissipation. It is commonly used in motor control, relay drivers, power regulators, audio amplifiers, and industrial switching applications where high gain and robustness are required.ngton 100 V 12 A 80 W Through Hole,
BDW93C

Description: Bipolar (BJT) Transistor NPN - DarliThe BDW93C is a high-voltage NPN Darlington power tran ...
Package: TUBE | MOQ: 1000 | MPQ: 50

/ The BCX53,146 is a general-purpose NPN bipolar junction transistor (BJT) from NXP Semiconductors, designed for medium-power switching and amplification applications. It provides a reliable balance between current handling capability and compact package size, making it suitable for a wide range of electronic designs. <br><br> This transistor supports a collector current of up to 1 A and a collector-emitter voltage rating of 45 V, enabling efficient operation in driver stages, load switching, and signal amplification circuits. Its low saturation voltage helps reduce power losses during switching, while its consistent current gain ensures stable performance. <br><br> Housed in a SOT-89 surface-mount package, the BCX53,146 offers improved thermal dissipation compared to smaller packages, making it suitable for higher power density applications. It is commonly used in power management circuits, voltage regulation, LED driving, and general-purpose switching in consumer and industrial electronics.

Description: The BCX53,146 is a general-purpose NPN bipolar junction transistor (BJT) from NXP Semicond ...
Package: T&R | MOQ: 1000 | MPQ: 1000

BCP53,115 / The BCP53,115 is a general-purpose NPN bipolar junction transistor (BJT) developed by NXP Semiconductors, designed for medium-power switching and amplification applications. It offers a robust combination of high current capability and reliable voltage handling, making it suitable for a wide range of electronic circuits. <br><br> This transistor supports a collector current of up to 1 A and a collector-emitter voltage rating of 45 V, enabling efficient operation in load-driving and signal amplification tasks. Its low saturation voltage helps minimize power dissipation during switching, while its stable current gain ensures consistent performance across varying conditions. <br><br> Packaged in a SOT-223 surface-mount form factor, the BCP53,115 provides good thermal performance and is ideal for automated PCB assembly. Typical applications include power management circuits, driver stages, voltage regulators, and general-purpose switching in consumer electronics and industrial systems.
BCP53,115

Description: The BCP53,115 is a general-purpose NPN bipolar junction transistor (BJT) developed by NXP ...
Package: T&R | MOQ: 1000 | MPQ: 1000

BCP56T1G / The BCP56T1G is a general-purpose NPN bipolar junction transistor (BJT) designed for medium-power amplification and switching applications. Manufactured by onsemi, it is optimized for high current handling and low saturation voltage, making it suitable for efficient power management in compact electronic designs. <br><br> This transistor supports a collector current of up to 1 A and features a collector-emitter voltage rating of 80 V, providing reliable performance in a wide range of circuits. Its low VCE(sat) characteristic ensures minimal power loss during switching operations, while its high current gain enables effective signal amplification. <br><br> Housed in a SOT-223 surface-mount package, the BCP56T1G offers good thermal performance and is well-suited for automated assembly processes. It is commonly used in applications such as voltage regulation, driver stages, load switching, and general-purpose amplification in consumer electronics, industrial systems, and power control circuits.
BCP56T1G

Description: The BCP56T1G is a general-purpose NPN bipolar junction transistor (BJT) designed for mediu ...
Package: T&R | MOQ: 4000 | MPQ: 4000

MJD127T4 / The MJD127T4 is a PNP Darlington power transistor designed for high-gain switching and amplification applications. It features a collector-emitter voltage (VCEO) of -100V and a continuous collector current up to -8A, with high DC current gain (hFE) typically around 1000, enabling efficient low-base-drive operation. The device provides collector-emitter saturation voltage around -2V at high current levels and supports power dissipation up to approximately 20–30W depending on thermal conditions. It has a transition frequency of about 4 MHz and includes an integrated Darlington configuration for improved gain performance. The transistor operates over a temperature range of -55°C to +150°C and offers robust performance with good thermal characteristics. Packaged in a DPAK (TO-252) surface-mount form, it is suitable for power switching, motor control, relay drivers, and industrial applications requiring high current and high gain.
MJD127T4

Description: The MJD127T4 is a PNP Darlington power transistor designed for high-gain switching and amp ...
Package: T&R | MOQ: 2500 | MPQ: 2500

IRFR220NTRPBF / IRFR220NTRPBF, N-Channel 200V 5A(Tc) 43W(Tc) Surface Mount TO-252AA (DPAK) IRFR220NTRPBF, IRFR220NTRPBF-ND, IRFR220NPBFCT, IRFR220NTRPBFTR, IRFR220NPBFTR, SP001577980, IRFR220NPBFDKR-ND, IRFR220NTRPBFDKR, IRFR220NPBFCT-ND, IRFR220NTRPBFCT, IRFR220NPBFTR-ND, IRFR220NPBFDKR
IRFR220NTRPBF

Description: IRFR220NTRPBF, N-Channel 200V 5A(Tc) 43W(Tc) Surface Mount TO-252AA (DPAK) IRFR220NTRPBF, ...
Package: T&R | MOQ: 2000 | MPQ: 2000

IRFB4127PBF / The IRFB4127PBF is a high-performance N-channel HEXFET® power MOSFET designed for high current and low conduction loss applications. It features a drain-source voltage (VDS) of 200V and a continuous drain current of up to 76A, with low on-resistance of approximately 20 mΩ at VGS = 10V, ensuring high efficiency in power switching applications . The device supports gate-source voltage up to ±20V and has a threshold voltage range of approximately 3V to 5V . It offers high power dissipation capability up to 375W and fast switching performance with rise time around 18 ns and fall time around 22 ns, along with total gate charge of about 100–150 nC . The MOSFET operates over a wide temperature range of -55°C to +175°C and provides strong avalanche and dv/dt ruggedness for reliability in demanding environments . Packaged in TO-220, it is ideal for DC-DC converters, motor drives, battery management systems, inverters, and high-current switching applications.
IRFB4127PBF

Description: The IRFB4127PBF is a high-performance N-channel HEXFET® power MOSFET designed for high cu ...
Package: TUBE | MOQ: 500 | MPQ: 50

IPA80R900P7XKSA1 / The IPA80R900P7XKSA1 is an N-channel super junction power MOSFET from Infineon’s CoolMOS™ P7 series, designed for high-efficiency switching in offline power supply applications. It features a drain-source voltage (VDS) of 800V and continuous drain current up to 6A, with low on-resistance of approximately 0.75–0.9Ω at VGS = 10V, enabling reduced conduction losses . The device offers low gate charge (~15–17 nC) and low capacitances, resulting in reduced switching losses and improved efficiency in high-frequency operation . It supports gate-source voltage up to ±20V and has a threshold voltage around 3V, ensuring easy drive compatibility . The MOSFET provides power dissipation up to 26–27W and operates over a wide temperature range of -55°C to +150°C . It integrates ESD protection and is optimized for flyback, SMPS, LED drivers, adapters, and industrial power applications, offering improved efficiency and thermal performance compared to previous generations .
IPA80R900P7XKSA1

Description: The IPA80R900P7XKSA1 is an N-channel super junction power MOSFET from Infineon’s CoolMOS ...
Package: TUBE | MOQ: 1000 | MPQ: 50

IKA15N60TXKSA1 / The IKA15N60TXKSA1 is a high-efficiency N-channel IGBT based on Infineon’s TRENCHSTOP™ field-stop technology, designed for fast switching and low conduction losses in power electronics applications. It features a collector-emitter voltage (VCE) of 600V and continuous collector current up to 14.7A (up to ~18A under certain conditions), with pulsed current capability of 45A . The device offers low saturation voltage typically around 1.5–2.05V, reducing conduction losses and improving overall efficiency . It supports gate-emitter voltage up to ±20V and has a gate charge of approximately 87 nC, enabling efficient gate driving . Switching performance is optimized with fast turn-on (~17–28 ns) and turn-off (~188–238 ns) times, along with low switching energy (~570 µJ) . The device integrates a fast recovery anti-parallel diode, enhancing performance in inverter and motor drive applications . It operates over a wide junction temperature range of -40°C to +175°C and has a maximum power dissipation of approximately 35.7W . Packaged in a TO-220 full-pack form, it provides electrical isolation and robust thermal performance, making it suitable for SMPS, motor control, inverters, and industrial power conversion systems.
IKA15N60TXKSA1

Description: The IKA15N60TXKSA1 is a high-efficiency N-channel IGBT based on Infineon’s TRENCHSTOP™ ...
Package: TUBE | MOQ: 50 | MPQ: 50

FDN5618P / The FDN5618P is a high-performance <strong>P-Channel MOSFET</strong> developed by <strong>onsemi</strong>, designed for efficient power management and switching applications. It utilizes advanced <strong>PowerTrench technology</strong> to achieve low on-resistance and fast switching performance. <br><br>The device supports a maximum <strong>drain-source voltage of -60V</strong> and a continuous drain current of up to <strong>-1.25A</strong>, making it suitable for low to medium power applications such as load switching and DC-DC conversion. <br><br>It features a low <strong>RDS(on)</strong> of approximately <strong>0.170Ω at VGS = -10V</strong> and <strong>0.230Ω at VGS = -4.5V</strong>, enabling reduced conduction losses and improved efficiency in power circuits. <br><br>The FDN5618P operates with a <strong>logic-level gate drive</strong>, allowing direct interfacing with microcontrollers and low-voltage control circuits. Its fast switching characteristics make it ideal for high-frequency applications. <br><br>Housed in a compact <strong>SOT-23 (SuperSOT-3) surface-mount package</strong>, the device is optimized for space-constrained PCB designs and supports automated assembly processes. <br><br>The <strong>FDN5618P</strong> is widely used in applications such as <strong>DC-DC converters, load switching circuits, battery management systems, portable electronics, and general power management solutions</strong>, where efficient and reliable switching performance is required.
FDN5618P

Description: The FDN5618P is a high-performance P-Channel MOSFET developed by ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BCP56-16T3G / The BCP56-16T3G is an NPN silicon epitaxial bipolar junction transistor designed for medium power amplification and switching applications. It features a collector-emitter voltage (VCEO) of 80V and collector current (IC) up to 1A, with power dissipation of approximately 1.5W. The device offers DC current gain (hFE) in the range of 100 to 250 (group -16) and a transition frequency (fT) of about 130 MHz, enabling efficient high-speed operation . It provides low collector-emitter saturation voltage around 0.5V, ensuring reduced conduction losses. The transistor supports maximum collector-base voltage of 100V and emitter-base voltage of 5V, with operating junction temperature range from -65°C to +150°C . Packaged in SOT-223, it offers good thermal performance and is suitable for audio amplifiers, driver stages, power switching, and general-purpose analog applications.
BCP56-16T3G

Description: The BCP56-16T3G is an NPN silicon epitaxial bipolar junction transistor designed for mediu ...
Package: T&R | MOQ: 4000 | MPQ: 4000

2N7002,215 / The 2N7002,215 is an N-channel enhancement-mode MOSFET designed for low-power switching and amplification applications. It features a drain-source voltage (VDS) of 60V and continuous drain current up to 300 mA, with low on-resistance of approximately 5 Ω at VGS = 10V. The device supports gate-source voltage up to ±20V and has a threshold voltage range of approximately 1V to 3V, enabling logic-level control. It offers fast switching characteristics with low gate charge (~2.5 nC) and low input capacitance (~50 pF), making it suitable for high-speed switching applications. The MOSFET has a total power dissipation of approximately 350 mW and operates over a temperature range of -55°C to +150°C. Packaged in SOT-23, it is ideal for load switching, level shifting, small signal amplification, and general-purpose switching applications in portable and embedded systems.
2N7002,215

Description: The 2N7002,215 is an N-channel enhancement-mode MOSFET designed for low-power switching an ...
Package: | MOQ: | MPQ:

FMMT619TA / The FMMT619TA is a high-performance NPN bipolar junction transistor designed for low saturation voltage and high current switching applications. It features a collector-emitter voltage (VCEO) of 50V and supports a high continuous collector current of up to 2A, with low saturation voltage typically below 200 mV at high current levels, ensuring efficient switching performance . The device provides high DC current gain (hFE) typically ≥200 at 1A and offers a transition frequency around 165 MHz, enabling fast switching and amplification . It has a maximum power dissipation of approximately 625 mW and very low collector leakage current (~100 nA), improving efficiency and reliability . The transistor operates over a wide temperature range of -55°C to +150°C and is packaged in a compact SOT-23-3 surface-mount form factor, making it suitable for space-constrained designs. Typical applications include MOSFET gate driving, DC-DC converters, LED drivers, and motor control circuits where high current and low loss are critical .
FMMT619TA

Description: The FMMT619TA is a high-performance NPN bipolar junction transistor designed for low satur ...
Package: T&R | MOQ: 3000 | MPQ: 3000

IRF7240TRPBF / The IRF7240TRPBF is a P-channel HEXFET® power MOSFET designed for high-efficiency power management and load switching applications. It features a drain-source voltage (VDS) of -40V and continuous drain current up to -10.5A, with very low on-resistance of approximately 15 mΩ at VGS = -10V, enabling minimal conduction losses and high efficiency . The device supports gate-source voltage up to ±20V and has a threshold voltage of around -1V to -3V, allowing logic-level operation. It offers typical gate charge of approximately 73 nC and power dissipation up to 2.5W, with fast switching performance suitable for high-frequency applications . The MOSFET operates over a wide temperature range of -55°C to +150°C and utilizes an optimized SOIC-8 package for improved thermal performance and compact PCB layout . It is widely used in battery management systems, DC-DC converters, and general power switching applications.
IRF7240TRPBF

Description: The IRF7240TRPBF is a P-channel HEXFET® power MOSFET designed for high-efficiency power m ...
Package: T&R | MOQ: 4000 | MPQ: 4000

SI4401FDY-T1-GE3 / The SI4401FDY-T1-GE3 is a P-channel TrenchFET® Gen III power MOSFET designed for high-efficiency switching and load management applications. It features a drain-source voltage (VDS) of -40V and continuous drain current up to -9.9A (TA) and -14A (TC), with low on-resistance of approximately 11.8 mΩ typical and 14.2 mΩ max at VGS = -10V, ensuring minimal conduction losses. The device supports gate-source voltage up to ±20V and has a threshold voltage range of approximately -1V to -2.3V, allowing logic-level drive compatibility. It offers fast switching performance with total gate charge around 66–100 nC and input capacitance approximately 4000 pF. Maximum power dissipation is about 2.5W (TA) to 5W (TC), and it operates over a wide temperature range from -55°C to +150°C. Packaged in SOIC-8, it is suitable for battery management, DC-DC converters, load switching, and power control circuits.
SI4401FDY-T1-GE3

Description: The SI4401FDY-T1-GE3 is a P-channel TrenchFET® Gen III power MOSFET designed for high-eff ...
Package: T&R | MOQ: 2500 | MPQ: 2500

FDS4435BZ / The FDS4435BZ is a P-channel enhancement-mode PowerTrench MOSFET designed for high-efficiency power management and load switching applications. It features a drain-source voltage (VDS) of -30V and continuous drain current of up to -8.8A, with very low on-resistance of approximately 20 mΩ at VGS = -10V and 35 mΩ at VGS = -4.5V, ensuring low conduction losses. The device supports a wide gate-source voltage range of ±25V and has a threshold voltage around -1V to -3V. It offers fast switching performance with gate charge around 40 nC and optimized trench technology for reduced switching losses. Maximum power dissipation is approximately 2.5W, and it operates over a temperature range of -55°C to +150°C . Packaged in SOIC-8, it is ideal for battery-powered systems, DC-DC converters, notebook power management, and load switching applications.
FDS4435BZ

Description: The FDS4435BZ is a P-channel enhancement-mode PowerTrench MOSFET designed for high-efficie ...
Package: T&R | MOQ: 2500 | MPQ: 2500

MDS3652URH / Single P-Channel Trench MOSFET, -30V, -11A, 17mOhm, MDS3652, Magnachip
MDS3652URH

Description: Single P-Channel Trench MOSFET, -30V, -11A, 17mOhm, MDS3652, Magnachip ...
Package: T&R | MOQ: 3000 | MPQ: 3000

AO4882 / The AO4882 is a dual N-channel enhancement-mode power MOSFET designed using advanced trench technology for high efficiency and low switching losses. It features a drain-source voltage (VDS) of 40V and continuous drain current up to 8A per channel, with low on-resistance of typically 19 mΩ at VGS = 10V and 27 mΩ at VGS = 4.5V, enabling efficient power handling. The device supports gate-source voltage up to ±20V and has a low threshold voltage range of approximately 1.4V to 2.4V, making it suitable for logic-level applications. It offers fast switching performance with low gate charge (~6.5 nC at 10V) and low input capacitance (~415 pF), ensuring high-speed operation. Power dissipation is approximately 2W, and it operates over a wide temperature range of -55°C to +150°C. Packaged in SOIC-8, it integrates two MOSFETs in a compact footprint, making it ideal for DC-DC converters, load switching, battery management, and power control applications.
AO4882

Description: The AO4882 is a dual N-channel enhancement-mode power MOSFET designed using advanced trenc ...
Package: T&R | MOQ: 3000 | MPQ: 3000

AO4459 / The AO4459 is a P-channel enhancement-mode power MOSFET designed for load switching and power management applications, utilizing advanced trench technology for low on-resistance and high efficiency. It features a drain-source voltage (VDS) of -30V and continuous drain current of up to -6.5A, with low RDS(on) typically below 46 mΩ at VGS = -10V, minimizing conduction losses. The device supports gate-source voltage up to ±20V and has a threshold voltage around -1V to -2.4V, enabling logic-level operation. It offers fast switching characteristics with low gate charge and rise time around 5–10 ns, making it suitable for high-frequency switching. Power dissipation is approximately 3.1W, and it operates over a wide temperature range from -55°C to +150°C. Packaged in SOIC-8, it is ideal for battery protection, load switching, DC-DC converters, and portable power applications.
AO4459

Description: The AO4459 is a P-channel enhancement-mode power MOSFET designed for load switching and po ...
Package: T&R | MOQ: 3000 | MPQ: 3000

DMN2029USD-13 / The DMN2029USD-13 is a dual N-channel enhancement-mode power MOSFET designed for high-efficiency switching and power management applications. It features a drain-source voltage (VDS) of 20V and continuous drain current of up to 5.8A per channel, with low on-resistance of approximately 25 mΩ at VGS = 4.5V, enabling reduced conduction losses. The device supports gate-source voltage up to ±8V and has a low threshold voltage around 1.5V, making it suitable for logic-level drive applications. It offers fast switching performance with typical gate charge around 10–18 nC and input capacitance approximately 1170 pF . The maximum power dissipation is about 1.2W, and it operates over a wide temperature range from -55°C to +150°C . Packaged in SOIC-8, it integrates two MOSFETs in a compact footprint, making it ideal for DC-DC converters, load switching, battery management, and power control circuits.
DMN2029USD-13

Description: The DMN2029USD-13 is a dual N-channel enhancement-mode power MOSFET designed for high-effi ...
Package: T&R | MOQ: 2500 | MPQ: 2500

2N3055AG / The 2N3055AG is a high-power NPN bipolar junction transistor designed for general-purpose switching and amplifier applications. It features a collector-emitter voltage (VCEO) of up to 60V, collector current (IC) capability of 15A, and a total power dissipation of up to 115W at a case temperature of 25°C. The transistor offers a DC current gain (hFE) typically in the range of 20 to 70 and operates with a transition frequency (fT) of approximately 2.5 MHz. It is designed for operation over a wide temperature range of -65°C to +200°C junction temperature. The TO-3 metal package ensures excellent thermal performance and high reliability, making it suitable for power supplies, audio amplifiers, voltage regulators, and industrial control circuits.
2N3055AG

Description: The 2N3055AG is a high-power NPN bipolar junction transistor designed for general-purpose ...
Package: TRAY | MOQ: 100 | MPQ: 100













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