MJD127T4
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| Part Number | MJD127T4 |
|---|---|
| Manufacturer |
 ON Semiconductor
|
| Description | The MJD127T4 is a PNP Darlington power transistor designed for high-gain switching and amplification applications. It features a collector-emitter voltage (VCEO) of -100V and a continuous collector current up to -8A, with high DC current gain (hFE) typically around 1000, enabling efficient low-base-drive operation. The device provides collector-emitter saturation voltage around -2V at high current levels and supports power dissipation up to approximately 20–30W depending on thermal conditions. It has a transition frequency of about 4 MHz and includes an integrated Darlington configuration for improved gain performance. The transistor operates over a temperature range of -55°C to +150°C and offers robust performance with good thermal characteristics. Packaged in a DPAK (TO-252) surface-mount form, it is suitable for power switching, motor control, relay drivers, and industrial applications requiring high current and high gain. |
| Product Group | Transistor |
| MOQ | 2500 pcs |
| SPQ | 2500 pcs |
| Figure/Case | TO-252-3, DPAK |
| Package | T&R Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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MJD127T4
MJD127T4