IRFB4127PBF
| Part Number | IRFB4127PBF |
|---|---|
| Manufacturer |
 Infineon
|
| Description | IRFB4127PBF N-Channel 200V 76A(Tc) 375W(Tc) Through Hole HEXFET Power MOSFET. The IRFB4127PBF is a high-performance N-channel MOSFET manufactured by Infineon Technologies, designed for power switching applications. |
| Product Group | Transistor |
| MOQ | 500 pcs |
| SPQ | 50 pcs |
| Figure/Case | TO-220-3 |
| Package | TUBE Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
| Attribute | Description |
|---|---|
| Manufacturer | Infineon Technologies |
| Part Number | IRFB4127PBF |
| Function | N-Channel Power MOSFET |
| Series | HEXFET® |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Drain-Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Id) | 76 A at 25°C (Tc) |
| Gate Threshold Voltage (Vgs(th)) | 5 V at 250 µA |
| Gate Charge (Qg) | 150 nC at Vgs = 10 V |
| Rds(on) | 20 mΩ at Id = 44 A, Vgs = 10 V |
| Input Capacitance (Ciss) | 5,380 pF at Vds = 50 V |
| Power Dissipation (Pd) | 375 W at Tc |
| Operating Temperature Range | -55°C to 175°C |
| Gate-Source Voltage (Vgs) | ±20 V |
| Package / Case | TO-220-3 |
| Base Product Number | IRFB4127 |
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IRFB4127PBF
IRFB4127PBF