Products Transistor IRFB4127PBF



IRFB4127PBF


Part Number IRFB4127PBF
Manufacturer Infineon
Description IRFB4127PBF N-Channel 200V 76A(Tc) 375W(Tc) Through Hole HEXFET Power MOSFET. The IRFB4127PBF is a high-performance N-channel MOSFET manufactured by Infineon Technologies, designed for power switching applications.
Product Group Transistor
MOQ 500 pcs
SPQ 50 pcs
Figure/Case TO-220-3
Package TUBE Pack
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Shipment Way DHL / Fedex / TNT / UPS / Others
Delivery Term Ex-Works
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AttributeDescription
ManufacturerInfineon Technologies
Part NumberIRFB4127PBF
FunctionN-Channel Power MOSFET
SeriesHEXFET®
Package TypeTO-220AB
Mounting TypeThrough Hole
Drain-Source Voltage (Vds)200 V
Continuous Drain Current (Id)76 A at 25°C (Tc)
Gate Threshold Voltage (Vgs(th))5 V at 250 µA
Gate Charge (Qg)150 nC at Vgs = 10 V
Rds(on)20 mΩ at Id = 44 A, Vgs = 10 V
Input Capacitance (Ciss)5,380 pF at Vds = 50 V
Power Dissipation (Pd)375 W at Tc
Operating Temperature Range-55°C to 175°C
Gate-Source Voltage (Vgs)±20 V
Package / CaseTO-220-3
Base Product NumberIRFB4127







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