Products Transistor IRFB4127PBF


IRFB4127PBF


IRFB4127PBF, Transistor, from Infineon  in Stock Hong Kong The IRFB4127PBF is a high-performance N-channel HEXFET® power MOSFET designed for high current and low conduction loss applications. It features a dr

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Part Number IRFB4127PBF
Manufacturer Infineon  Official Vector Logo Infineon
Description The IRFB4127PBF is a high-performance N-channel HEXFET® power MOSFET designed for high current and low conduction loss applications. It features a drain-source voltage (VDS) of 200V and a continuous drain current of up to 76A, with low on-resistance of approximately 20 mΩ at VGS = 10V, ensuring high efficiency in power switching applications . The device supports gate-source voltage up to ±20V and has a threshold voltage range of approximately 3V to 5V . It offers high power dissipation capability up to 375W and fast switching performance with rise time around 18 ns and fall time around 22 ns, along with total gate charge of about 100–150 nC . The MOSFET operates over a wide temperature range of -55°C to +175°C and provides strong avalanche and dv/dt ruggedness for reliability in demanding environments . Packaged in TO-220, it is ideal for DC-DC converters, motor drives, battery management systems, inverters, and high-current switching applications.
Product Group Transistor
MOQ 500 pcs
SPQ 50 pcs
Figure/Case TO-220-3
Package TUBE Pack
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AttributeDescription
ManufacturerInfineon Technologies
Part NumberIRFB4127PBF
FunctionN-Channel Power MOSFET
SeriesHEXFET®
Package TypeTO-220AB
Mounting TypeThrough Hole
Drain-Source Voltage (Vds)200 V
Continuous Drain Current (Id)76 A at 25°C (Tc)
Gate Threshold Voltage (Vgs(th))5 V at 250 µA
Gate Charge (Qg)150 nC at Vgs = 10 V
Rds(on)20 mΩ at Id = 44 A, Vgs = 10 V
Input Capacitance (Ciss)5,380 pF at Vds = 50 V
Power Dissipation (Pd)375 W at Tc
Operating Temperature Range-55°C to 175°C
Gate-Source Voltage (Vgs)±20 V
Package / CaseTO-220-3
Base Product NumberIRFB4127







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