Products Transistor BDW93C


BDW93C


BDW93C, Transistor, from ST Microelectronics in Stock Hong Kong Bipolar (BJT) Transistor NPN - DarliThe BDW93C is a high-voltage NPN Darlington power transistor from STMicroelectronics, designed for applications re

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Part Number BDW93C
Manufacturer ST Microelectronics Official Vector Logo ST Microelectronics
Description Bipolar (BJT) Transistor NPN - DarliThe BDW93C is a high-voltage NPN Darlington power transistor from STMicroelectronics, designed for applications requiring high current gain and efficient switching. By integrating two transistors in a Darlington configuration, it provides very high DC current gain (hFE), allowing it to be driven with low base current while controlling large collector currents.

This device supports a collector-emitter voltage of up to 100 V and a continuous collector current of up to 12 A, making it suitable for demanding power applications. It also features built-in base-emitter resistors, simplifying circuit design and improving switching performance.

The BDW93C is housed in a TO-220 through-hole package, offering excellent thermal performance and easy mounting with heat sinks for high-power dissipation. It is commonly used in motor control, relay drivers, power regulators, audio amplifiers, and industrial switching applications where high gain and robustness are required.ngton 100 V 12 A 80 W Through Hole,
Product Group Transistor
MOQ 1000 pcs
SPQ 50 pcs
Figure/Case TO-220-3
Package TUBE Pack
PDF PDF Datasheet
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Delivery Term Ex-Works
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FeaturesDescription
Current - Collector (Ic) (Max)1A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 5A, 3V
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
Package / CaseTO-220-3
Power - Max80 W
Transistor TypeNPN - Darlington
Vce Saturation (Max) @ Ib, Ic3V @ 100mA, 10A
Voltage - Collector Emitter Breakdown (Max)100 V







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