Products Transistor IRFZ44NPBF


IRFZ44NPBF


IRFZ44NPBF, Transistor, from Infineon  in Stock Hong Kong The IRFZ44N is an N-channel power MOSFET designed for high-current switching applications. It features a drain-source voltage rating of 55 V and a con

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Part Number IRFZ44NPBF
Manufacturer Infineon  Official Vector Logo Infineon
Description The IRFZ44N is an N-channel power MOSFET designed for high-current switching applications. It features a drain-source voltage rating of 55 V and a continuous drain current up to 49 A under proper thermal conditions. The device offers low on-resistance (Rds(on)) typically around 0.017–0.028 Ω, enabling efficient power switching with reduced conduction losses. It requires a gate drive voltage of around 10 V for optimal performance and provides fast switching characteristics suitable for high-frequency applications. The IRFZ44N is commonly used in motor control, DC-DC converters, power supplies, inverters, and switching circuits in industrial and consumer electronic systems.
Product Group Transistor
MOQ 1000 pcs
SPQ 50 pcs
Figure/Case TO-220-3
Package TUBE Pack
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ParameterValueDescription
Part NumberIRFZ44NPBFN-Channel Power MOSFET
TechnologyMOSFETMetal-Oxide-Semiconductor Field-Effect Transistor
Voltage Rating (VDSS)55VMaximum Drain-Source Voltage
Current Rating (ID)49AContinuous Drain Current
Power Dissipation (PD)94WMaximum Power Dissipation
RDS(on) (Max)17.5mΩMaximum Drain-Source On-Resistance
Gate Threshold Voltage (VGS(th))2.0V - 4.0VThreshold voltage to turn on
Gate-Source Voltage (VGS)±20VMaximum allowable gate voltage
Total Gate Charge (QG)67nCCharge required to switch MOSFET
Rise Time (tr)60nsSwitching rise time
Fall Time (tf)45nsSwitching fall time
Input Capacitance (Ciss)1700pFCapacitance seen at the gate
Package TypeTO-220Transistor Outline (TO) package
Mounting TypeThrough-HoleDesigned for PCB mounting
Operating Temperature (TJ)-55°C to 175°CMaximum junction temperature







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