Products Transistor IRFP250NPBF


IRFP250NPBF


Part Number IRFP250NPBF
Manufacturer Infineon  Official Vector Logo Infineon
Description N-Channel 200 V 30A (Tc) 214W (Tc) Through Hole TO-247AC, 75mOhm @18A, 10V
Product Group Transistor
MOQ 1000 pcs
SPQ 25 pcs
Figure/Case TO-247-3
Package TUBE Pack
PDF PDF Datasheet
Ship From Hong Kong
Shipment Way DHL / Fedex / TNT / UPS / Others
Delivery Term Ex-Works
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FeatureSpecification
Transistor TypeN-Channel MOSFET
Drain-to-Source Voltage (VDS)200 V
Continuous Drain Current (ID)30 A (at 25°C)
Drain-to-Source On-Resistance (RDS(on))75 mΩ (at ID = 18 A, VGS = 10 V)
Gate Charge (Qg)123 nC (at VGS = 10 V)
Total Power Dissipation (PD)214 W (at TC = 25°C)
Gate-to-Source Voltage (VGS)±20 V
Input Capacitance (Ciss)2,159 pF (at VDS = 25 V)
Operating Junction Temperature (TJ)-55°C to 175°C
PackageTO-247AC


  • High-efficiency power supplies: Used in DC-DC converters and power inverters where efficiency is a priority.
  • Motor control: In industrial motor drivers and automotive motor control circuits.
  • Switching regulators: For step-up or step-down converters that require high current switching.
  • Power amplifiers: In audio power amplifiers where MOSFETs are used to amplify the signal.
  • Automotive electronics: Used in various automotive power control circuits, including electric vehicle systems.





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