BCP56T1G
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| Part Number | BCP56T1G |
|---|---|
| Manufacturer |
 ON Semiconductor
|
| Description | The BCP56T1G is a general-purpose NPN bipolar junction transistor (BJT) designed for medium-power amplification and switching applications. Manufactured by onsemi, it is optimized for high current handling and low saturation voltage, making it suitable for efficient power management in compact electronic designs.
This transistor supports a collector current of up to 1 A and features a collector-emitter voltage rating of 80 V, providing reliable performance in a wide range of circuits. Its low VCE(sat) characteristic ensures minimal power loss during switching operations, while its high current gain enables effective signal amplification. Housed in a SOT-223 surface-mount package, the BCP56T1G offers good thermal performance and is well-suited for automated assembly processes. It is commonly used in applications such as voltage regulation, driver stages, load switching, and general-purpose amplification in consumer electronics, industrial systems, and power control circuits. |
| Product Group | Transistor |
| MOQ | 4000 pcs |
| SPQ | 4000 pcs |
| Figure/Case | SOT-223 |
| Package | T&R Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
| Features | Description |
|---|---|
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Frequency - Transition | 130MHz |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C |
| Package / Case | TO-261-4 |
| Power - Max | 1.5 W |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
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BCP56T1G
BCP56T1G