Products Transistor MJD122T4G


MJD122T4G


Part Number MJD122T4G
Manufacturer ST Microelectronics Official Vector Logo ST Microelectronics
Description Darlington NPN Transistor BJT(Bipolar) 100V 8A 20W Surface Mount DPAK. The MJD122T4 is suitable for applications requiring high current handling and voltage capabilities, such as audio amplifiers, power supplies, and motor control circuits. Its high DC current gain ensures efficient operation, while the monolithic construction with a built-in base-emitter shunt resistor enhances thermal stability and reliability.
Product Group Transistor
MOQ 2500 pcs
SPQ 2500 pcs
Figure/Case DPAK
Package T&R Pack
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Shipment Way DHL / Fedex / TNT / UPS / Others
Delivery Term Ex-Works
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FeatureSpecification
TypeNPN Darlington Bipolar Power Transistor
Collector-Emitter Voltage (VCE)100V (Maximum)
Collector Current (IC)8A (Maximum)
Power Dissipation (PC)20W (Maximum)
DC Current Gain (hFE)1000 (Minimum) at IC = 4A and VCE = 4V
Saturation Voltage (VCE(sat))4V (Maximum) at IC = 8A and IB = 80mA
Transition Frequency (fT)4MHz (Minimum)
Operating Junction Temperature (Tj)-65°C to +150°C
Package TypeDPAK (TO-252-3)







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