DMN6040SSDQ-13
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| Part Number | DMN6040SSDQ-13 |
|---|---|
| Manufacturer |
 Diodes Incorporated
|
| Description | The DMN6040SSDQ-13 is a high-efficiency dual N-channel enhancement mode MOSFET developed by Diodes Incorporated, designed for power management and switching applications requiring low conduction losses and fast switching performance. It integrates two independent MOSFETs in a single compact package, enabling space-saving circuit designs. The device supports a drain-source voltage of 60V and a continuous drain current of up to 5A per channel, making it suitable for medium-power switching applications such as DC-DC converters and load switching circuits. It features a low on-resistance (RDS(on)) of approximately 40mΩ at VGS = 10V, which helps minimize power dissipation and improves overall system efficiency. The MOSFET is optimized for fast switching speed and low input capacitance, enabling high-frequency operation and efficient power conversion in modern electronic systems. The device operates with a gate-source voltage range up to ±20V and offers robust performance across a wide temperature range of -55°C to +150°C, ensuring reliability in demanding environments. Housed in a compact SOIC-8 surface-mount package, the DMN6040SSDQ-13 is optimized for automated assembly and high-density PCB layouts. It is also AEC-Q101 qualified, making it suitable for automotive-grade applications. The DMN6040SSDQ-13 is widely used in applications such as DC-DC converters, power management circuits, LED backlighting, load switching, and automotive electronics, where high efficiency, compact size, and reliable switching performance are required. |
| Product Group | Transistor |
| MOQ | 2500 pcs |
| SPQ | 2500 pcs |
| Figure/Case | 8-SOIC |
| Package | T&R Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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DMN6040SSDQ-13
DMN6040SSDQ-13