All Products Transistor

PJA3441_R1_00001 / The PJA3441_R1_00001 is a compact and efficient <strong>P-channel enhancement mode MOSFET</strong> developed by <strong>Panjit International</strong>, designed for low-voltage switching and power management applications. It is optimized for use in portable and embedded systems where space and efficiency are critical. <br><br>This device features a <strong>low threshold voltage</strong>, allowing reliable <strong>logic-level operation</strong> with microcontrollers and low-voltage control circuits. It supports a <strong>drain-source voltage of approximately -30V</strong>, making it suitable for a wide range of low-power switching applications. <br><br>The PJA3441_R1_00001 provides <strong>low on-resistance</strong>, reducing conduction losses and improving overall system efficiency, especially in battery-powered designs. It also offers <strong>fast switching characteristics</strong>, enabling effective performance in high-frequency applications. <br><br>Encased in a <strong>SOT-23 surface-mount package</strong>, the device is ideal for compact PCB layouts and automated assembly processes, supporting high-density electronic designs. <br><br>The <strong>PJA3441_R1_00001</strong> is widely used in <strong>load switching, battery management, power distribution, DC-DC converters, and general-purpose switching circuits</strong>, providing a reliable and cost-effective solution for modern electronic systems.
PJA3441_R1_00001

Description: The PJA3441_R1_00001 is a compact and efficient P-channel enhancement mode MOSFET ...
Package: T&R | MOQ: 3000 | MPQ: 3000

2N7002_R1_00001 / The 2N7002_R1_00001 is a compact and efficient <strong>N-channel enhancement mode MOSFET</strong> designed for low-power switching and signal control applications. Developed by <strong>Panjit International</strong>, it is widely used in digital and analog circuits requiring reliable switching performance in a small footprint. <br><br>This device features a <strong>low threshold voltage</strong>, making it suitable for <strong>logic-level operation</strong> with microcontrollers and low-voltage digital systems. It supports a <strong>drain-source voltage up to approximately 60V</strong> and provides stable switching characteristics for general-purpose applications. <br><br>The 2N7002_R1_00001 offers <strong>fast switching speed and low gate charge</strong>, enabling efficient operation in high-frequency circuits. Its low on-resistance helps reduce conduction losses and improves overall efficiency in switching designs. <br><br>Encapsulated in a <strong>SOT-23 surface-mount package</strong>, the device is optimized for compact PCB layouts and automated assembly processes. It is ideal for high-density designs where space and performance are critical. <br><br>The <strong>2N7002_R1_00001</strong> is commonly used in <strong>load switching, level shifting, DC-DC converters, signal routing, and general-purpose switching applications</strong>, offering a cost-effective and reliable solution for modern electronic systems.
2N7002_R1_00001

Description: The 2N7002_R1_00001 is a compact and efficient N-channel enhancement mode MOSFET ...
Package: T&R | MOQ: 3000 | MPQ: 3000

FQP65N06 / The FQP65N06 is a robust <strong>N-channel power MOSFET</strong> developed by <strong>onsemi (formerly Fairchild Semiconductor)</strong>, designed for high-efficiency switching and low-voltage power applications. It is built using advanced <strong>planar stripe DMOS technology</strong>, which enables low on-resistance and excellent switching performance. <br><br>This device supports a maximum <strong>drain-source voltage of 60V</strong> and can handle up to <strong>65A continuous drain current</strong>, making it suitable for high-current switching applications such as power supplies and motor control systems. <br><br>The FQP65N06 features a very low <strong>RDS(on) of approximately 0.016Ω at VGS = 10V</strong>, minimizing conduction losses and improving overall system efficiency. It also offers a <strong>low gate charge (~48nC)</strong>, enabling faster switching speeds and reduced switching losses in high-frequency designs. <br><br>Designed for rugged performance, the MOSFET is <strong>100% avalanche tested</strong> and provides improved <strong>dv/dt capability</strong>, ensuring reliable operation under dynamic load conditions. It supports a wide <strong>junction temperature range up to 175°C</strong>, making it suitable for demanding environments. <br><br>The device also features low capacitance characteristics and fast switching behavior, which help reduce power dissipation and improve efficiency in applications such as <strong>DC-DC converters, switching power supplies, and battery-powered systems</strong>. <br><br>Encapsulated in a standard <strong>TO-220 through-hole package</strong>, the FQP65N06 offers excellent thermal performance and easy mounting for power applications requiring heat dissipation. <br><br>The <strong>FQP65N06</strong> is widely used in <strong>automotive electronics, power management circuits, motor drivers, inverters, and high-efficiency switching applications</strong>, where high current capability and low conduction losses are critical.
FQP65N06

Description: The FQP65N06 is a robust N-channel power MOSFET developed by onse ...
Package: BULK | MOQ: 500 | MPQ: 500

FQB33N10TM / The FQB33N10TM is a robust <strong>N-channel power MOSFET</strong> developed by <strong>onsemi</strong>, designed for high-efficiency switching applications in power management systems. It features a <strong>drain-to-source voltage rating of 100V</strong>, making it suitable for medium-voltage power circuits. <br><br>The device supports a high <strong>continuous drain current of up to 33A</strong>, enabling reliable operation in demanding load conditions such as motor control and DC-DC conversion. <br><br>It offers a low <strong>on-resistance (RDS(on)) of approximately 45mΩ</strong>, reducing conduction losses and improving overall efficiency in switching applications. <br><br>The MOSFET is designed with <strong>fast switching characteristics and low gate charge</strong>, allowing efficient operation at higher switching frequencies and minimizing power dissipation. <br><br>It operates with a <strong>gate-source voltage range of ±20V</strong> and provides stable performance across a wide temperature range up to <strong>+175°C junction temperature</strong>, ensuring reliability in industrial environments. <br><br>Encased in a <strong>DPAK (TO-252) surface-mount package</strong>, the device offers good thermal performance and is suitable for compact and high-power PCB layouts. <br><br>The <strong>FQB33N10TM</strong> is widely used in <strong>switch-mode power supplies, motor drivers, DC-DC converters, battery management systems, and general-purpose power switching applications</strong>, where high current capability and efficiency are required.
FQB33N10TM

Description: The FQB33N10TM is a robust N-channel power MOSFET developed by on ...
Package: T&R | MOQ: 2500 | MPQ: 2500

IRLML6402TRPBF / The IRLML6402TRPBF is a compact <strong>P-channel enhancement-mode MOSFET</strong> developed by <strong>Infineon Technologies</strong>, designed for efficient power switching in low-voltage applications. It features a <strong>drain-to-source voltage of -20V</strong> and supports continuous drain currents up to <strong>-3.7A</strong>, making it suitable for load switching and power management circuits. <br><br>The device offers a very low <strong>on-resistance of approximately 65mΩ</strong>, significantly reducing conduction losses and improving efficiency in battery-powered and portable designs. <br><br>With a <strong>low gate threshold voltage (around -0.4V to -1.2V)</strong>, the MOSFET supports <strong>logic-level gate drive</strong>, allowing direct control from microcontrollers and low-voltage logic circuits. <br><br>The IRLML6402TRPBF features <strong>fast switching characteristics and low gate charge (~8nC)</strong>, enabling efficient operation in high-frequency switching applications such as DC-DC converters. <br><br>Designed for reliability, it supports a maximum junction temperature of <strong>+150°C</strong> and provides robust thermal performance with a power dissipation of approximately <strong>1.3W</strong>. <br><br>Encased in a compact <strong>SOT-23 surface-mount package</strong>, the device is ideal for space-constrained PCB layouts and high-density electronic designs. <br><br>The <strong>IRLML6402TRPBF</strong> is widely used in <strong>battery management systems, load switching circuits, DC-DC converters, portable electronics, and power control applications</strong>, where low losses and compact size are essential.
IRLML6402TRPBF

Description: The IRLML6402TRPBF is a compact P-channel enhancement-mode MOSFET develop ...
Package: T&R | MOQ: 3000 | MPQ: 3000

IRF7316TRPBF / The IRF7316TRPBF is a compact <strong>dual P-channel MOSFET</strong> developed by <strong>Infineon Technologies</strong>, designed for efficient power switching and load management in low-voltage applications. It integrates <strong>two P-channel MOSFETs in a single package</strong>, simplifying circuit design and reducing PCB space requirements. <br><br>The device supports a <strong>drain-to-source voltage of -30V</strong> and a continuous drain current of up to <strong>-4.9A per channel</strong>, making it suitable for moderate power switching applications. <br><br>It features a <strong>low RDS(on) of approximately 58mΩ</strong>, which helps minimize conduction losses and improve overall efficiency in power management circuits. <br><br>The MOSFET includes <strong>logic-level gate drive capability</strong>, allowing direct control from low-voltage microcontrollers and digital circuits. It also provides <strong>fast switching performance and low gate charge (~34nC)</strong>, enabling efficient operation in high-frequency switching applications. <br><br>Designed for reliable operation, the device supports a wide temperature range from <strong>-55°C to +150°C</strong>, ensuring stable performance in industrial environments. <br><br>Encased in a compact <strong>SOIC-8 surface-mount package</strong>, the IRF7316TRPBF is optimized for space-constrained PCB layouts while maintaining good thermal performance. <br><br>The <strong>IRF7316TRPBF</strong> is widely used in <strong>load switching, DC-DC converters, battery management systems, portable electronics, and power control circuits</strong>, where compact dual MOSFET integration and efficient switching are required.
IRF7316TRPBF

Description: The IRF7316TRPBF is a compact dual P-channel MOSFET developed by ...
Package: T&R | MOQ: 4000 | MPQ: 4000

IRFH8202TRPBF / The IRFH8202TRPBF is a high-performance <strong>N-channel power MOSFET</strong> developed by <strong>Infineon Technologies</strong>, designed for low-voltage, high-current switching applications. It features a <strong>drain-to-source voltage of 25V</strong> and supports high continuous drain currents up to <strong>100A</strong>, making it suitable for demanding power management systems. <br><br>The device is built using advanced MOSFET technology and offers an ultra-low <strong>RDS(on) of approximately 1.05mΩ</strong>, significantly reducing conduction losses and improving overall system efficiency. <br><br>With a <strong>low gate charge (typ. ~52nC)</strong> and fast switching characteristics, the IRFH8202TRPBF enables efficient high-frequency operation, making it ideal for DC-DC converters and power switching circuits. <br><br>The MOSFET operates with a <strong>gate-source voltage range of ±20V</strong> and features a low <strong>gate threshold voltage (~1.8V to 2.35V)</strong>, allowing compatibility with standard logic-level drivers. <br><br>Designed for robust performance, it supports an operating junction temperature range of <strong>-55°C to +150°C</strong> and offers high power dissipation capability, ensuring reliability in industrial and high-load environments. <br><br>Encased in a compact <strong>PQFN 5x6 surface-mount package</strong>, the IRFH8202TRPBF provides excellent thermal performance and enables high power density PCB designs. <br><br>The <strong>IRFH8202TRPBF</strong> is widely used in <strong>DC-DC converters, synchronous rectification, battery management systems, motor drivers, and high-efficiency power switching applications</strong>, where low losses and high current capability are critical.
IRFH8202TRPBF

Description: The IRFH8202TRPBF is a high-performance N-channel power MOSFET developed ...
Package: T&R | MOQ: 4000 | MPQ: 4000

BSP171PH6327XTSA1 / The BSP171PH6327XTSA1 is a reliable <strong>P-channel enhancement-mode MOSFET</strong> developed by <strong>Infineon Technologies</strong>, designed for power switching and control applications in compact electronic systems. It supports a <strong>drain-to-source voltage of -60V</strong>, making it suitable for medium-voltage applications. <br><br>The device provides a continuous drain current of up to <strong>1.9A</strong>, enabling efficient handling of moderate power loads in switching circuits and power management designs. <br><br>With a typical <strong>low on-resistance of approximately 300mΩ</strong>, the MOSFET minimizes conduction losses and improves overall system efficiency, especially in battery-powered and energy-sensitive applications. <br><br>The BSP171PH6327XTSA1 operates in <strong>enhancement mode with logic-level gate drive capability</strong>, allowing easy interfacing with microcontrollers and low-voltage control circuits. It also features <strong>fast switching performance and low gate charge</strong>, making it suitable for high-speed switching applications. <br><br>Designed for robust operation, the device supports junction temperatures up to <strong>+150°C</strong> and includes rugged characteristics for reliable performance under dynamic conditions. <br><br>Encased in a compact <strong>SOT-223-4 surface-mount package</strong>, the MOSFET is optimized for efficient thermal performance and space-saving PCB layouts. <br><br>The <strong>BSP171PH6327XTSA1</strong> is widely used in <strong>load switching, power management, DC-DC converters, battery-operated devices, and industrial control systems</strong>, where efficient and reliable P-channel switching is required.
BSP171PH6327XTSA1

Description: The BSP171PH6327XTSA1 is a reliable P-channel enhancement-mode MOSFET dev ...
Package: T&R | MOQ: 1000 | MPQ: 1000

BSS131H6327XTSA1 / The BSS131H6327XTSA1 is a compact <strong>N-channel enhancement-mode MOSFET</strong> developed by <strong>Infineon Technologies</strong>, designed for small-signal switching and low-power applications. It offers a high <strong>drain-to-source voltage rating of 240V</strong>, making it suitable for high-voltage, low-current circuits. <br><br>The device supports a continuous drain current of up to <strong>110mA</strong>, providing reliable switching performance in signal-level and control applications. It features a <strong>low gate threshold voltage (typically 0.8V to 1.8V)</strong>, enabling efficient operation with logic-level drive signals. <br><br>Built using advanced <strong>SIPMOS™ technology</strong>, the BSS131H6327XTSA1 delivers stable performance with a typical <strong>on-resistance around 14Ω</strong>, helping reduce conduction losses in switching operations. <br><br>The MOSFET features <strong>fast switching characteristics and low gate charge</strong>, making it suitable for high-speed switching applications such as signal amplification and low-frequency power control. <br><br>It is designed for robust operation with a maximum junction temperature of <strong>+150°C</strong> and includes features such as <strong>avalanche capability and dv/dt ruggedness</strong>, ensuring reliability in demanding environments. <br><br>Encased in a miniature <strong>SOT-23 surface-mount package</strong>, the device is optimized for compact PCB layouts and high-density designs. <br><br>The <strong>BSS131H6327XTSA1</strong> is widely used in <strong>switching circuits, level shifting, signal amplification, LED driving, and general-purpose low-power electronic applications</strong>, where compact size and high-voltage capability are required.
BSS131H6327XTSA1

Description: The BSS131H6327XTSA1 is a compact N-channel enhancement-mode MOSFET devel ...
Package: T&R | MOQ: 3000 | MPQ: 3000

IRF7507TRPBF / The IRF7507TRPBF is a compact <strong>dual N-channel and P-channel power MOSFET</strong> developed by <strong>Infineon Technologies</strong>, designed for efficient switching and power management applications in space-constrained electronic systems. It integrates <strong>one N-channel and one P-channel MOSFET</strong> within a single package, enabling simplified circuit design for complementary switching configurations. <br><br>The device supports a <strong>drain-to-source voltage of 20V</strong> and provides continuous drain currents up to <strong>2.4A (N-channel) and 1.7A (P-channel)</strong>, making it suitable for low-to-medium power applications. <br><br>Built using advanced <strong>HEXFET® technology</strong>, the IRF7507TRPBF delivers <strong>low RDS(on) (approximately 140mΩ)</strong>, reducing conduction losses and improving overall efficiency in switching circuits. <br><br>The MOSFET features a <strong>logic-level gate drive</strong>, allowing it to be fully driven by low-voltage control signals such as those from microcontrollers or digital logic circuits. It also offers <strong>fast switching performance and low gate charge (~8nC)</strong>, making it suitable for high-frequency operation. <br><br>Encased in a compact <strong>Micro8 (MSOP-8) surface-mount package</strong>, the device is optimized for high-density PCB layouts and portable electronics where board space is limited. <br><br>The <strong>IRF7507TRPBF</strong> is commonly used in <strong>battery-powered devices, load switching, DC-DC converters, power management circuits, and portable electronics</strong>, where efficient dual MOSFET operation and compact size are essential.
IRF7507TRPBF

Description: The IRF7507TRPBF is a compact dual N-channel and P-channel power MOSFET d ...
Package: T&R | MOQ: 4000 | MPQ: 4000

ZXTC2063E6TA / The ZXTC2063E6TA is a compact and high-performance <strong>dual bipolar transistor array (NPN + PNP)</strong> developed by <strong>Diodes Incorporated</strong>, designed for switching, amplification, and driver applications in space-constrained electronic designs. It integrates <strong>one NPN and one PNP transistor</strong> in a single package, enabling complementary circuit configurations. <br><br>The device supports a <strong>collector-emitter voltage of up to 40V</strong> and provides high current capability with <strong>collector currents up to 3.5A (NPN) and 3A (PNP)</strong>, making it suitable for medium-power applications. <br><br>It features a <strong>low saturation voltage (VCE(sat))</strong>, which helps reduce power loss and improve efficiency in switching applications. The transistor array also offers <strong>high DC current gain (hFE)</strong>, ensuring effective signal amplification and drive capability. <br><br>With a <strong>fast transition frequency (up to ~190MHz for NPN and ~270MHz for PNP)</strong>, the ZXTC2063E6TA is suitable for high-speed switching and signal processing circuits. <br><br>The device is housed in a compact <strong>SOT-26 surface-mount package</strong>, enabling high-density PCB layouts and efficient thermal performance. It operates across a wide temperature range of <strong>-55°C to +150°C</strong>, making it suitable for demanding industrial environments. <br><br>The <strong>ZXTC2063E6TA</strong> is widely used in <strong>MOSFET and IGBT gate driving, motor control circuits, DC-DC converters, and general-purpose switching applications</strong>, where compact size and high performance are required.
ZXTC2063E6TA

Description: The ZXTC2063E6TA is a compact and high-performance dual bipolar transistor array ( ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BSC112N06LDATMA1 / The BSC112N06LDATMA1 is a high-performance <strong>dual N-channel power MOSFET</strong> from <strong>Infineon Technologies</strong>, designed for efficient power switching and management in modern electronic systems. It features a <strong>60V drain-to-source voltage</strong> and supports a continuous drain current of up to <strong>20A per channel</strong>, making it suitable for a wide range of medium-voltage applications. <br><br>The device is built using advanced <strong>OptiMOS™ technology</strong>, delivering a very low <strong>RDS(on) of approximately 11.2 mΩ</strong>, which minimizes conduction losses and improves overall system efficiency. <br><br>Configured as a <strong>dual MOSFET (2 × N-channel)</strong>, it enables compact circuit designs and reduces PCB footprint, making it ideal for synchronous rectification and DC-DC converter topologies. <br><br>The BSC112N06LDATMA1 supports a <strong>wide operating temperature range from -55°C to +175°C</strong> and features a <strong>logic-level gate drive</strong>, allowing efficient operation even at lower gate voltages. <br><br>With a <strong>maximum power dissipation of approximately 65W</strong> and optimized switching characteristics including low gate charge (~55nC), the device is well-suited for high-frequency and high-efficiency designs. <br><br>Housed in a compact <strong>PG-TDSON-8 (SuperSO8) surface-mount package</strong>, it provides excellent thermal performance and high power density for space-constrained applications. <br><br>The <strong>BSC112N06LDATMA1</strong> is widely used in <strong>DC-DC converters, power supplies, motor control systems, synchronous rectification circuits, and industrial automation applications</strong>, where high efficiency and compact design are critical.
BSC112N06LDATMA1

Description: The BSC112N06LDATMA1 is a high-performance dual N-channel power MOSFET fr ...
Package: T&R | MOQ: 5000 | MPQ: 5000

BSC155N06NDATMA1 / The BSC155N06NDATMA1 is a high-efficiency <strong>dual N-channel power MOSFET</strong> developed by <strong>Infineon Technologies</strong>, designed for switching and power management applications requiring high current capability and low conduction losses. It features a <strong>60V drain-to-source voltage</strong> and a continuous drain current of up to <strong>20A per channel</strong>, making it suitable for medium-voltage power designs. <br><br>The device is built using advanced <strong>OptiMOS™ technology</strong>, providing a very low <strong>RDS(on) of approximately 15.5 mΩ</strong>, which helps reduce power dissipation and improve overall system efficiency. <br><br>Configured as a <strong>dual MOSFET (2 × N-channel)</strong>, the BSC155N06NDATMA1 enables compact circuit designs by integrating two transistors in a single package, optimizing board space and simplifying layout in synchronous switching applications. <br><br>The component supports a <strong>wide operating temperature range from -55°C to +175°C</strong> and offers fast switching performance with low gate charge (<strong>~29nC</strong>), making it ideal for high-frequency switching converters and motor control systems. <br><br>Housed in a compact <strong>PG-TDSON-8 (SuperSO8) surface-mount package</strong>, it provides excellent thermal performance and high power density, enabling efficient heat dissipation in compact designs. <br><br>The <strong>BSC155N06NDATMA1</strong> is widely used in <strong>DC-DC converters, synchronous rectification, motor drives, power supplies, and industrial automation systems</strong>, where high efficiency, reliability, and compact footprint are critical.
BSC155N06NDATMA1

Description: The BSC155N06NDATMA1 is a high-efficiency dual N-channel power MOSFET dev ...
Package: T&R | MOQ: 5000 | MPQ: 5000

TIP122 / The TIP122 is an NPN Darlington power transistor designed for high-gain amplification and switching applications. It features a maximum collector-emitter voltage of 100 V and supports continuous collector currents up to approximately 5 A. The Darlington configuration provides very high DC current gain (hFE typically around 1000 or more), allowing it to be driven with low base current. The device includes an internal base-emitter resistor to improve switching performance. Due to its structure, it has a higher saturation voltage compared to standard BJTs (typically around 2 V). The TIP122 is commonly used in motor drivers, relay control, LED driving, power switching circuits, and general-purpose amplification applications.
TIP122

Description: The TIP122 is an NPN Darlington power transistor designed for high-gain amplification and ...
Package: TUBE | MOQ: 2000 | MPQ: 50

BC557B / The BC557B is a general-purpose PNP bipolar junction transistor designed for low-noise amplification and switching applications. It features a maximum collector-emitter voltage of -45 V and supports continuous collector currents up to approximately -100 mA. The “B” gain group indicates a medium DC current gain (hFE) typically ranging from 200 to 450, making it suitable for amplification circuits. The device provides low noise performance and reliable switching characteristics. The BC557B is commonly used in audio amplification, signal processing, switching circuits, complementary transistor pairs (with BC547B), and general-purpose electronic applications.
BC557B

Description: The BC557B is a general-purpose PNP bipolar junction transistor designed for low-noise amp ...
Package: BULK | MOQ: 2000 | MPQ: 2000

BC547B / The BC547B is a general-purpose NPN bipolar junction transistor widely used for low-noise amplification and switching applications. It features a maximum collector-emitter voltage of 45 V and supports continuous collector currents up to approximately 100 mA. The “B” gain group indicates a medium DC current gain (hFE) typically ranging from 200 to 450, making it suitable for amplification circuits. The device offers low noise characteristics and reliable switching performance. The BC547B is commonly used in audio amplification, signal processing, switching circuits, and general-purpose electronic applications in both consumer and industrial designs.
BC547B

Description: The BC547B is a general-purpose NPN bipolar junction transistor widely used for low-noise ...
Package: BULK | MOQ: 2000 | MPQ: 2000

2N3906 / The 2N3906 is a general-purpose PNP bipolar junction transistor designed for low-power amplification and switching applications. It features a maximum collector-emitter voltage of approximately -40 V and supports continuous collector currents up to around -200 mA. The device provides fast switching performance and a typical DC current gain (hFE) ranging from 100 to 300 depending on operating conditions. It is commonly used in signal amplification, switching circuits, complementary transistor pairs (with 2N3904), oscillator circuits, and general-purpose electronic designs.
2N3906

Description: The 2N3906 is a general-purpose PNP bipolar junction transistor designed for low-power amp ...
Package: TUBE | MOQ: 2000 | MPQ: 2000

2N3904 / The 2N3904 is a general-purpose NPN bipolar junction transistor designed for low-power amplification and switching applications. It features a maximum collector-emitter voltage of approximately 40 V and supports continuous collector currents up to around 200 mA. The device provides fast switching performance and a typical DC current gain (hFE) ranging from 100 to 300 depending on operating conditions. It is widely used in signal amplification, switching circuits, oscillator circuits, and general-purpose electronic applications. The 2N3904 is commonly found in hobbyist projects, embedded systems, and industrial designs due to its reliability and versatility.
2N3904

Description: The 2N3904 is a general-purpose NPN bipolar junction transistor designed for low-power amp ...
Package: TUBE | MOQ: 2000 | MPQ: 2000

MMBT2222L / The MMBT2222 is a surface-mount general-purpose NPN bipolar junction transistor, equivalent to the 2N2222A in a compact SOT-23 package. It features a maximum collector-emitter voltage of approximately 40 V and supports continuous collector currents up to around 600 mA. The device provides fast switching performance and a typical DC current gain (hFE) ranging from 75 to 300 depending on operating conditions. It is well-suited for low-power amplification and switching applications. The MMBT2222 is commonly used in signal amplification, switching circuits, relay driving, and general-purpose electronic designs where space-saving SMD packaging is required.
MMBT2222L

Description: The MMBT2222 is a surface-mount general-purpose NPN bipolar junction transistor, equivalen ...
Package: T&R | MOQ: 3000 | MPQ: 3000

2N2222A(P2N2222A) / The 2N2222A(P2N2222A) is a widely used general-purpose NPN bipolar junction transistor designed for switching and amplification applications. It features a maximum collector-emitter voltage of approximately 40 V and supports continuous collector currents up to around 600 mA. The device offers high switching speed and good gain characteristics, with a typical DC current gain (hFE) ranging from 75 to 300 depending on operating conditions. It is suitable for both low-power amplification and fast switching circuits. The 2N2222A is commonly used in signal amplification, relay driving, switching circuits, and general-purpose electronic applications in both hobbyist and industrial designs.
2N2222A(P2N2222A)

Description: The 2N2222A(P2N2222A) is a widely used general-purpose NPN bipolar junction transistor des ...
Package: TUBE | MOQ: 2000 | MPQ: 100

IRLML2502 / The IRLML2502 is a compact N-channel logic-level MOSFET designed for efficient low-voltage switching applications. It features a drain-source voltage rating of 20 V and supports continuous drain current up to approximately 3.4 A under proper thermal conditions. The device offers low on-resistance (Rds(on)) typically around 45–70 mΩ depending on gate voltage, enabling efficient operation with reduced conduction losses. It can be fully driven with low gate voltages (as low as 2.5–4.5 V), making it ideal for direct interfacing with microcontrollers and logic circuits. The IRLML2502 is widely used in load switching, DC-DC converters, battery-powered devices, power management circuits, and portable electronics requiring compact SMD solutions.
IRLML2502

Description: The IRLML2502 is a compact N-channel logic-level MOSFET designed for efficient low-voltage ...
Package: T&R | MOQ: 3000 | MPQ: 3000

Si2302CDS / The SI2302DS is a compact N-channel logic-level MOSFET designed for low-voltage switching and power management applications. It features a drain-source voltage rating of 20 V and supports continuous drain current up to approximately 2.8–3 A depending on thermal conditions. The device offers low on-resistance (Rds(on)) typically around 50–70 mΩ at Vgs = 4.5 V, enabling efficient switching with minimal power loss. It can be driven directly by low-voltage logic signals, making it suitable for microcontroller interfacing. The SI2302DS is commonly used in load switching, DC-DC converters, battery-powered devices, power management circuits, and portable electronics where small SOT-23 packaging is required.
Si2302CDS

Description: The SI2302DS is a compact N-channel logic-level MOSFET designed for low-voltage switching ...
Package: T&R | MOQ: 3000 | MPQ: 3000

FQP30N06L / The FQP30N06L is a logic-level N-channel power MOSFET designed for efficient low-voltage switching applications. It features a drain-source voltage rating of 60 V and a continuous drain current up to approximately 32 A. The device offers low on-resistance (Rds(on)) typically around 0.035 Ω at Vgs = 10 V, enabling reduced conduction losses and improved efficiency. It supports low gate threshold voltage (around 1–2.5 V), allowing direct drive from microcontrollers and logic circuits. The MOSFET is built using advanced DMOS technology, providing fast switching performance, low gate charge (~15 nC), and high avalanche capability. The FQP30N06L is widely used in DC-DC converters, motor control, power supplies, and battery-powered systems requiring efficient and reliable switching.
FQP30N06L

Description: The FQP30N06L is a logic-level N-channel power MOSFET designed for efficient low-voltage s ...
Package: TUBE | MOQ: 2000 | MPQ: 50

IRLZ44N / The IRLZ44N is an N-channel logic-level power MOSFET designed for efficient switching at low gate drive voltages. It features a drain-source voltage rating of 55 V and can handle continuous drain currents up to approximately 47 A under proper thermal conditions. The device offers low on-resistance (Rds(on)) typically around 0.022 Ω at Vgs = 5 V, allowing efficient operation even with direct microcontroller drive. It provides fast switching performance and improved efficiency in low-voltage applications. The IRLZ44N is widely used in motor drivers, DC-DC converters, power switching circuits, LED dimming, and battery-powered systems where logic-level control is required.
IRLZ44N

Description: The IRLZ44N is an N-channel logic-level power MOSFET designed for efficient switching at l ...
Package: TUBE | MOQ: 2000 | MPQ: 50

AO4480 / The AO4480 is a dual N-channel MOSFET designed for high-efficiency power switching in compact packages. It operates with a maximum drain-source voltage (VDS) of 30V, making it suitable for low- to medium-voltage applications like DC-DC converters and load switches. Each channel can handle a continuous drain current (ID) up to 8A at a VGS of 10V, and up to 6.5A at 4.5V, providing robust current-handling for compact designs. It features a very low on-resistance (RDS(on)), typically 0.0105ohm at VGS = 10V and 0.0135ohm at VGS = 4.5V, ensuring minimal conduction losses and high efficiency. The gate threshold voltage (VGS(th)) ranges from 0.6V to 1.0V, making it fully logic-level compatible. Fast switching characteristics, low gate charge, and a compact SO-8 package make the AO4480 ideal for power management, synchronous buck converters, and battery-operated equipment.
AO4480

Description: The AO4480 is a dual N-channel MOSFET designed for high-efficiency power switching in comp ...
Package: T&R | MOQ: 3000 | MPQ: 3000

2N7000 / The 2N7000 is an N-channel enhancement-mode MOSFET designed primarily for low-power switching applications. It features a maximum drain-source voltage (VDS) of 60V, allowing it to handle moderate voltage levels. The continuous drain current (ID) is rated at 200 mA, with pulsed currents permissible up to 500 mA, making it suitable for small-load switching. It has a relatively low on-resistance (RDS(on)), typically 1.2 ohms at a gate voltage (VGS) of 10V, contributing to efficient operation with minimal power loss. The gate threshold voltage (VGS(th)) ranges from 0.8V to 3V, meaning it can be turned on with standard logic-level signals. Additionally, the input capacitance is low, around 20–50 pF, enabling fast switching speeds with minimal gate drive requirements. These features make the 2N7000 an ideal choice for digital switching, signal interfacing, and small load driving in both hobbyist and commercial circuits.
2N7000

Description: The 2N7000 is an N-channel enhancement-mode MOSFET designed primarily for low-power switch ...
Package: T&R | MOQ: 10000 | MPQ: 10000

PSMN4R1-60YLX / ​The PSMN4R1-60YLX is a high-performance N-channel MOSFET from Nexperia, engineered for efficient power switching in applications such as power supplies, motor control, and USB-PD systems. It features a maximum drain-source voltage (V<sub>DS</sub>) of 60 V and a low on-state resistance (R<sub>DS(on)</sub>) of 4.8 mΩ at V<sub>GS</sub> = 5 V and 3.3 mΩ at V<sub>GS</sub> = 10 V, minimizing conduction losses. The device supports continuous drain current up to 100 A at a mounting base temperature of 25°C and can handle pulsed currents up to 593 A. Its total gate charge is 103 nC, with a gate-drain charge of 18.1 nC, facilitating fast switching operations. The MOSFET is housed in a compact LFPAK56 (Power-SO8) package, offering a maximum power dissipation of 238 W, and operates within a junction temperature range of -55°C to 175°C. Additionally, it is avalanche-rated and 100% tested, ensuring reliability in demanding applications .​
PSMN4R1-60YLX

Description: ​The PSMN4R1-60YLX is a high-performance N-channel MOSFET from Nexperia, engineered for ...
Package: T&R | MOQ: 1500 | MPQ: 1500

DC010NG-S / The DC010NG-S is an N-Channel MOSFET developed by SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. It utilizes advanced trench technology to achieve low on-resistance (R_DS(on)) and reduced gate charge, enhancing its efficiency in various applications.
DC010NG-S

Description: The DC010NG-S is an N-Channel MOSFET developed by SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD ...
Package: T&R | MOQ: 2000 | MPQ: 2000

BSS84-7-F / The BSS84-7-F is a P-channel enhancement-mode MOSFET manufactured by Diodes Incorporated, optimized for low-voltage, high-speed switching applications. It features a drain-source voltage rating of 50V and a continuous drain current of 130mA at a case temperature of 25°C. The MOSFET offers a maximum on-resistance (Rds(on)) of 10 ohms at a gate-source voltage (Vgs) of 5V and a drain current of 100mA. With a gate threshold voltage (Vgs(th)) of up to 2V at 1mA, it ensures reliable switching performance. The device operates efficiently within a junction temperature range of -55°C to 150°C, making it suitable for various applications requiring compact and efficient switching solutions.
BSS84-7-F

Description: The BSS84-7-F is a P-channel enhancement-mode MOSFET manufactured by Diodes Incorporated, ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BSS123-7-F / The BSS123-7-F is an N-channel enhancement-mode MOSFET manufactured by Diodes Incorporated, designed for low-voltage, high-speed switching applications. It features a drain-source voltage rating of 100V and a continuous drain current of 170mA at a case temperature of 25°C. The MOSFET offers a maximum on-resistance (Rds(on)) of 6 ohms at a gate-source voltage (Vgs) of 10V and a drain current of 170mA. With a gate threshold voltage (Vgs(th)) of up to 2V at 1mA, it ensures reliable switching performance. The device operates efficiently within a junction temperature range of -55°C to 150°C, making it suitable for various applications requiring compact and efficient switching solutions.
BSS123-7-F

Description: The BSS123-7-F is an N-channel enhancement-mode MOSFET manufactured by Diodes Incorporated ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BSP75NTA / The BSP75NTA is a self-protected low-side IntelliFET MOSFET switch manufactured by Diodes Incorporated. Designed for high-current switching applications, it features a low on-resistance of 0.385 ohms, supporting continuous drain currents up to 1.3A. The device offers comprehensive protection mechanisms, including short-circuit, overvoltage, overcurrent, and thermal shutdown with auto-restart functionality. Housed in a compact SOT-223 package, the BSP75NTA is suitable for automotive and other space-constrained applications requiring efficient and reliable switching performance.
BSP75NTA

Description: The BSP75NTA is a self-protected low-side IntelliFET MOSFET switch manufactured by Diodes ...
Package: T&R | MOQ: 1000 | MPQ: 1000

BC846B,215 / The BC846B,215 is an NPN general-purpose transistor ideal for switching and amplification applications. Manufactured by Nexperia, it comes in a compact SOT23 package, offering high performance with a maximum collector-emitter voltage of 65V and a maximum collector current of 100mA. It features a transition frequency of 100 MHz and is capable of handling power dissipation up to 250mW. The BC846B,215 is suitable for use in a wide range of electronic circuits, thanks to its high current gain and efficient operation across a wide temperature range.
BC846B,215

Description: The BC846B,215 is an NPN general-purpose transistor ideal for switching and amplification ...
Package: T&R | MOQ: 3000 | MPQ: 3000

AO3401A / The AO3401A is a P-channel MOSFET in an SOT-23-3 package, designed for low-voltage switching applications. It features low on-resistance, high efficiency, and fast switching speed, making it ideal for battery-powered devices, DC-DC converters, load switching, and power management applications.
AO3401A

Description: The AO3401A is a P-channel MOSFET in an SOT-23-3 package, designed for low-voltage switchi ...
Package: T&R | MOQ: 3000 | MPQ: 3000

AO3400A / The AO3400A is a compact N-channel logic-level power MOSFET designed for low-voltage, high-efficiency switching applications. It features a drain-source voltage rating of 30 V and supports continuous drain currents up to approximately 5.8 A under proper thermal conditions. The device offers very low on-resistance (Rds(on)) typically around 30 mΩ at Vgs = 4.5 V, enabling efficient operation with minimal conduction losses. It can be fully driven by low gate voltages, making it suitable for direct interfacing with microcontrollers and low-voltage logic circuits. The AO3400A is commonly used in load switching, DC-DC converters, battery-powered devices, power management circuits, and portable electronics where space-saving SMD packaging is required.
AO3400A

Description: The AO3400A is a compact N-channel logic-level power MOSFET designed for low-voltage, high ...
Package: T&R | MOQ: 3000 | MPQ: 3000

MMBT3904LT1G / Bipolar (BJT) Transistor NPN 40 V 200 mA 300MHz 300 mW Surface Mount SOT-23-3 (TO-236)
MMBT3904LT1G

Description: Bipolar (BJT) Transistor NPN 40 V 200 mA 300MHz 300 mW Surface Mount SOT-23-3 (TO-236) ...
Package: T&R | MOQ: 3000 | MPQ: 3000

MMBT3904-E / SMD Equivalent 2N3904 Plastic-Encapsulate Transistors Epitaxial Planar Die Construction
MMBT3904-E

Description: SMD Equivalent 2N3904 Plastic-Encapsulate Transistors Epitaxial Planar Die Construction ...
Package: T&R | MOQ: 3000 | MPQ: 3000

30N06 / N-Channel 60 V 30A (Tc) 55W (Tc) Surface Mount TO-252 (DPAK)
30N06

Description: N-Channel 60 V 30A (Tc) 55W (Tc) Surface Mount TO-252 (DPAK) ...
Package: T&R | MOQ: 2500 | MPQ: 2500

2SA1015 / Bipolar (BJT) Transistor
2SA1015

Description: Bipolar (BJT) Transistor ...
Package: T&R | MOQ: 3000 | MPQ: 3000

1N65G / N-Channel 650 V 1A (Tj) Surface Mount SOT-223
1N65G

Description: N-Channel 650 V 1A (Tj) Surface Mount SOT-223 ...
Package: T&R | MOQ: 2500 | MPQ: 2500

1N60G / 600V N-Channel 1A (Tj) Surface Mount SMT MOSfet Transistor SOT-223
1N60G

Description: 600V N-Channel 1A (Tj) Surface Mount SMT MOSfet Transistor SOT-223 ...
Package: T&R | MOQ: 2500 | MPQ: 2500

ZTX603STZ / Bipolar (BJT) Transistor NPN - Darlington 80 V 1 A 150MHz 1 W Through Hole E-Line (TO-92)
ZTX603STZ

Description: Bipolar (BJT) Transistor NPN - Darlington 80 V 1 A 150MHz 1 W Through Hole E-Line (TO-92) ...
Package: BULK | MOQ: 2000 | MPQ: 2000

PMBT3904,215 / Bipolar (BJT) Transistor NPN 40 V 200 mA 300MHz 250 mW Surface Mount TO-236AB
PMBT3904,215

Description: Bipolar (BJT) Transistor NPN 40 V 200 mA 300MHz 250 mW Surface Mount TO-236AB ...
Package: T&R | MOQ: 3000 | MPQ: 3000

IRFH8318TRPBF / N-Channel 30 V 27A (Ta), 120A (Tc) 3.6W (Ta), 59W (Tc) Surface Mount PQFN (5x6)
IRFH8318TRPBF

Description: N-Channel 30 V 27A (Ta), 120A (Tc) 3.6W (Ta), 59W (Tc) Surface Mount PQFN (5x6) ...
Package: T&R | MOQ: 4000 | MPQ: 4000

BC807-40,215 / Bipolar (BJT) Transistor PNP 45 V 500 mA 80MHz 250 mW Surface Mount TO-236AB
BC807-40,215

Description: Bipolar (BJT) Transistor PNP 45 V 500 mA 80MHz 250 mW Surface Mount TO-236AB ...
Package: T&R | MOQ: 9000 | MPQ: 3000

BC817-40,215 / Bipolar (BJT) Transistor NPN 45V 500 mA 100MHz 250 mW Surface Mount TO-236AB
BC817-40,215

Description: Bipolar (BJT) Transistor NPN 45V 500 mA 100MHz 250 mW Surface Mount TO-236AB ...
Package: T&R | MOQ: 3000 | MPQ: 3000

2SC5200-O(Q) / The 2SC5200-O(Q) is an NPN bipolar junction transistor (BJT) manufactured by Toshiba, commonly used in high-power amplifier applications. Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)
2SC5200-O(Q)

Description: The 2SC5200-O(Q) is an NPN bipolar junction transistor (BJT) manufactured by Toshiba, comm ...
Package: TUBE | MOQ: 1000 | MPQ: 100

2SA1943-O(Q) / The 2SA1943-O(Q) is a PNP bipolar junction transistor (BJT) manufactured by Toshiba, commonly used in high-power amplifier applications. Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L),
2SA1943-O(Q)

Description: The 2SA1943-O(Q) is a PNP bipolar junction transistor (BJT) manufactured by Toshiba, commo ...
Package: TUBE | MOQ: 1000 | MPQ: 100

TK39A60W,S4VX(M / The TK39A60W,S4VX is an N-channel MOSFET developed by Toshiba, suitable for high-voltage switching applications. N-Channel 600 V 38.8A (Ta) 50W (Tc) Through Hole TO-220SIS.
TK39A60W,S4VX(M

Description: The TK39A60W,S4VX is an N-channel MOSFET developed by Toshiba, suitable for high-voltage s ...
Package: TUBE | MOQ: 2000 | MPQ: 50

SSM6N44FE,LM / The SSM6N44FE,LM is a dual N-channel MOSFET designed by Toshiba for small-signal applications. Mosfet Array 30V 100mA 150mW Surface Mount SOT-563/SOT-666.
SSM6N44FE,LM

Description: The SSM6N44FE,LM is a dual N-channel MOSFET designed by Toshiba for small-signal applicati ...
Package: T&R | MOQ: 4000 | MPQ: 4000

NVMFS6H836NWFT3G / N-Channel 80 V 15A (Ta), 74A (Tc) 3.7W (Ta), 89W (Tc) Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
NVMFS6H836NWFT3G

Description: N-Channel 80 V 15A (Ta), 74A (Tc) 3.7W (Ta), 89W (Tc) Surface Mount, Wettable Flank 5-DFNW ...
Package: T&R | MOQ: 5000 | MPQ: 5000

MMBT2222AT-7-F / The MMBT2222AT-7-F is a general-purpose NPN bipolar junction transistor (BJT) designed for low-power amplification and switching applications. Bipolar (BJT) Transistor NPN 40 V 600 mA 300MHz 150 mW Surface Mount SOT-523
MMBT2222AT-7-F

Description: The MMBT2222AT-7-F is a general-purpose NPN bipolar junction transistor (BJT) designed for ...
Package: T&R | MOQ: 3000 | MPQ: 3000













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