Products Transistor FDN5618P


FDN5618P


FDN5618P, Transistor, from ON Semiconductor in Stock Hong Kong The FDN5618P is a high-performance <strong>P-Channel MOSFET</strong> developed by <strong>onsemi</strong>, designed for efficient power management and

The image is for illustrative purposes only; please refer to the product data sheet for precise specifications.


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Part Number FDN5618P
Manufacturer ON Semiconductor Official Vector Logo ON Semiconductor
Description The FDN5618P is a high-performance P-Channel MOSFET developed by onsemi, designed for efficient power management and switching applications. It utilizes advanced PowerTrench technology to achieve low on-resistance and fast switching performance.

The device supports a maximum drain-source voltage of -60V and a continuous drain current of up to -1.25A, making it suitable for low to medium power applications such as load switching and DC-DC conversion.

It features a low RDS(on) of approximately 0.170Ω at VGS = -10V and 0.230Ω at VGS = -4.5V, enabling reduced conduction losses and improved efficiency in power circuits.

The FDN5618P operates with a logic-level gate drive, allowing direct interfacing with microcontrollers and low-voltage control circuits. Its fast switching characteristics make it ideal for high-frequency applications.

Housed in a compact SOT-23 (SuperSOT-3) surface-mount package, the device is optimized for space-constrained PCB designs and supports automated assembly processes.

The FDN5618P is widely used in applications such as DC-DC converters, load switching circuits, battery management systems, portable electronics, and general power management solutions, where efficient and reliable switching performance is required.
Product Group Transistor
MOQ 3000 pcs
SPQ 3000 pcs
Figure/Case SOT-23-3
Package T&R Pack
PDF PDF Datasheet
Ship From Hong Kong
Shipment Way DHL / Fedex / TNT / UPS / Others
Delivery Term Ex-Works
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