The image is for illustrative purposes only; please refer to the product data sheet for precise specifications.
| Part Number | FDN5618P |
|---|---|
| Manufacturer |
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| Description | The FDN5618P is a high-performance P-Channel MOSFET developed by onsemi, designed for efficient power management and switching applications. It utilizes advanced PowerTrench technology to achieve low on-resistance and fast switching performance. The device supports a maximum drain-source voltage of -60V and a continuous drain current of up to -1.25A, making it suitable for low to medium power applications such as load switching and DC-DC conversion. It features a low RDS(on) of approximately 0.170Ω at VGS = -10V and 0.230Ω at VGS = -4.5V, enabling reduced conduction losses and improved efficiency in power circuits. The FDN5618P operates with a logic-level gate drive, allowing direct interfacing with microcontrollers and low-voltage control circuits. Its fast switching characteristics make it ideal for high-frequency applications. Housed in a compact SOT-23 (SuperSOT-3) surface-mount package, the device is optimized for space-constrained PCB designs and supports automated assembly processes. The FDN5618P is widely used in applications such as DC-DC converters, load switching circuits, battery management systems, portable electronics, and general power management solutions, where efficient and reliable switching performance is required. |
| Product Group | Transistor |
| MOQ | 3000 pcs |
| SPQ | 3000 pcs |
| Figure/Case | SOT-23-3 |
| Package | T&R Pack |
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| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
Room 1304, 13/F, Allways Centre, 468 Jaffe Road, Causeway Bay, Hong Kong. |