FDS4435BZ
The image is for illustrative purposes only; please refer to the product data sheet for precise specifications.
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| Part Number | FDS4435BZ |
|---|---|
| Manufacturer |
 ON Semiconductor
|
| Description | The FDS4435BZ is a P-channel enhancement-mode PowerTrench MOSFET designed for high-efficiency power management and load switching applications. It features a drain-source voltage (VDS) of -30V and continuous drain current of up to -8.8A, with very low on-resistance of approximately 20 mΩ at VGS = -10V and 35 mΩ at VGS = -4.5V, ensuring low conduction losses. The device supports a wide gate-source voltage range of ±25V and has a threshold voltage around -1V to -3V. It offers fast switching performance with gate charge around 40 nC and optimized trench technology for reduced switching losses. Maximum power dissipation is approximately 2.5W, and it operates over a temperature range of -55°C to +150°C . Packaged in SOIC-8, it is ideal for battery-powered systems, DC-DC converters, notebook power management, and load switching applications. |
| Product Group | Transistor |
| MOQ | 2500 pcs |
| SPQ | 2500 pcs |
| Figure/Case | 8-SOIC |
| Package | T&R Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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FDS4435BZ
FDS4435BZ