BCP56-16T3G
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| Part Number | BCP56-16T3G |
|---|---|
| Manufacturer |
 ON Semiconductor
|
| Description | The BCP56-16T3G is an NPN silicon epitaxial bipolar junction transistor designed for medium power amplification and switching applications. It features a collector-emitter voltage (VCEO) of 80V and collector current (IC) up to 1A, with power dissipation of approximately 1.5W. The device offers DC current gain (hFE) in the range of 100 to 250 (group -16) and a transition frequency (fT) of about 130 MHz, enabling efficient high-speed operation . It provides low collector-emitter saturation voltage around 0.5V, ensuring reduced conduction losses. The transistor supports maximum collector-base voltage of 100V and emitter-base voltage of 5V, with operating junction temperature range from -65°C to +150°C . Packaged in SOT-223, it offers good thermal performance and is suitable for audio amplifiers, driver stages, power switching, and general-purpose analog applications. |
| Product Group | Transistor |
| MOQ | 4000 pcs |
| SPQ | 4000 pcs |
| Figure/Case | SOT-223 |
| Package | T&R Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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BCP56-16T3G
BCP56-16T3G