IRFHM4234
The image is for illustrative purposes only; please refer to the product data sheet for precise specifications.
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| Part Number | IRFHM4234 |
|---|---|
| Manufacturer |
 EVVO Semiconductor
|
| Description | The IRFHM4234 is a high-efficiency N-channel power MOSFET developed by Infineon Technologies, designed for low-voltage, high-current switching applications such as DC-DC converters and power management systems. It features a maximum drain-source voltage of 25V and supports high current capability (up to ~40A continuous depending on thermal conditions), making it ideal for modern high-density power designs. One of its key advantages is the extremely low RDS(on) (as low as ~4.4 mΩ), which significantly reduces conduction losses and improves overall efficiency in power conversion circuits. The device is built using advanced trench MOSFET technology (FastIRFET™), offering: Low gate charge (~8.2 nC) → faster switching Low thermal resistance (~4.4 °C/W) → improved heat dissipation High power density in compact layouts It operates with a gate-source voltage up to ±20V and supports efficient switching even at logic-level drive voltages (e.g., 4.5V), making it suitable for modern low-voltage controllers. The compact PQFN 3.3 × 3.3 mm package enables space-saving PCB designs while maintaining strong thermal performance, ideal for high-frequency switching applications. |
| Product Group | Transistor |
| MOQ | 4000 pcs |
| SPQ | 4000 pcs |
| Figure/Case | PDFN3*3-8L-JQ |
| Package | T&R Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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IRFHM4234
IRFHM4234