DMN2029USD-13
The image is for illustrative purposes only; please refer to the product data sheet for precise specifications.
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| Part Number | DMN2029USD-13 |
|---|---|
| Manufacturer |
 Diodes Incorporated
|
| Description | The DMN2029USD-13 is a dual N-channel enhancement-mode power MOSFET designed for high-efficiency switching and power management applications. It features a drain-source voltage (VDS) of 20V and continuous drain current of up to 5.8A per channel, with low on-resistance of approximately 25 mΩ at VGS = 4.5V, enabling reduced conduction losses. The device supports gate-source voltage up to ±8V and has a low threshold voltage around 1.5V, making it suitable for logic-level drive applications. It offers fast switching performance with typical gate charge around 10–18 nC and input capacitance approximately 1170 pF . The maximum power dissipation is about 1.2W, and it operates over a wide temperature range from -55°C to +150°C . Packaged in SOIC-8, it integrates two MOSFETs in a compact footprint, making it ideal for DC-DC converters, load switching, battery management, and power control circuits. |
| Product Group | Transistor |
| MOQ | 2500 pcs |
| SPQ | 2500 pcs |
| Figure/Case | 8-SOIC |
| Package | T&R Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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DMN2029USD-13
DMN2029USD-13