AO4882
The image is for illustrative purposes only; please refer to the product data sheet for precise specifications.
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| Part Number | AO4882 |
|---|---|
| Manufacturer |
 ALPHA OMEGA Semiconductor
|
| Description | The AO4882 is a dual N-channel enhancement-mode power MOSFET designed using advanced trench technology for high efficiency and low switching losses. It features a drain-source voltage (VDS) of 40V and continuous drain current up to 8A per channel, with low on-resistance of typically 19 mΩ at VGS = 10V and 27 mΩ at VGS = 4.5V, enabling efficient power handling. The device supports gate-source voltage up to ±20V and has a low threshold voltage range of approximately 1.4V to 2.4V, making it suitable for logic-level applications. It offers fast switching performance with low gate charge (~6.5 nC at 10V) and low input capacitance (~415 pF), ensuring high-speed operation. Power dissipation is approximately 2W, and it operates over a wide temperature range of -55°C to +150°C. Packaged in SOIC-8, it integrates two MOSFETs in a compact footprint, making it ideal for DC-DC converters, load switching, battery management, and power control applications. |
| Product Group | Transistor |
| MOQ | 3000 pcs |
| SPQ | 3000 pcs |
| Figure/Case | 8-SOIC |
| Package | T&R Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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AO4882
AO4882