IRL540NPBF
The image is for illustrative purposes only; please refer to the product data sheet for precise specifications.
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| Part Number | IRL540NPBF |
|---|---|
| Manufacturer |
 Infineon
|
| Description | N-Channel 100V 36A 140W Through Hole TO-220-3, 44mOhm @18A, 10V |
| Product Group | Transistor |
| MOQ | 1000 pcs |
| SPQ | 50 pcs |
| Figure/Case | TO-220-3 |
| Package | TUBE Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
| Parameter | Value | Description |
|---|---|---|
| Part Number | IRL540NPBF | Logic-Level N-Channel Power MOSFET |
| Technology | MOSFET | Metal-Oxide-Semiconductor Field-Effect Transistor |
| Voltage Rating (VDSS) | 100V | Maximum Drain-Source Voltage |
| Current Rating (ID) | 36A | Continuous Drain Current |
| Power Dissipation (PD) | 125W | Maximum Power Dissipation |
| RDS(on) (Max) | 44mΩ | Maximum Drain-Source On-Resistance |
| Gate Threshold Voltage (VGS(th)) | 1.0V - 2.0V | Low threshold voltage for logic-level operation |
| Gate-Source Voltage (VGS) | ±16V | Maximum allowable gate voltage |
| Total Gate Charge (QG) | 67nC | Charge required to switch MOSFET |
| Rise Time (tr) | 50ns | Switching rise time |
| Fall Time (tf) | 42ns | Switching fall time |
| Input Capacitance (Ciss) | 1400pF | Capacitance seen at the gate |
| Package Type | TO-220 | Transistor Outline (TO) package |
| Mounting Type | Through-Hole | Designed for PCB mounting |
| Operating Temperature (TJ) | -55°C to 175°C | Maximum junction temperature |
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IRL540NPBF
IRL540NPBF