Products Transistor IRL540NPBF


IRL540NPBF


Part Number IRL540NPBF
Manufacturer Infineon  Official Vector Logo Infineon
Description N-Channel 100V 36A 140W Through Hole TO-220-3, 44mOhm @18A, 10V
Product Group Transistor
MOQ 1000 pcs
SPQ 50 pcs
Figure/Case TO-220-3
Package TUBE Pack
PDF PDF Datasheet
Ship From Hong Kong
Shipment Way DHL / Fedex / TNT / UPS / Others
Delivery Term Ex-Works
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ParameterValueDescription
Part NumberIRL540NPBFLogic-Level N-Channel Power MOSFET
TechnologyMOSFETMetal-Oxide-Semiconductor Field-Effect Transistor
Voltage Rating (VDSS)100VMaximum Drain-Source Voltage
Current Rating (ID)36AContinuous Drain Current
Power Dissipation (PD)125WMaximum Power Dissipation
RDS(on) (Max)44mΩMaximum Drain-Source On-Resistance
Gate Threshold Voltage (VGS(th))1.0V - 2.0VLow threshold voltage for logic-level operation
Gate-Source Voltage (VGS)±16VMaximum allowable gate voltage
Total Gate Charge (QG)67nCCharge required to switch MOSFET
Rise Time (tr)50nsSwitching rise time
Fall Time (tf)42nsSwitching fall time
Input Capacitance (Ciss)1400pFCapacitance seen at the gate
Package TypeTO-220Transistor Outline (TO) package
Mounting TypeThrough-HoleDesigned for PCB mounting
Operating Temperature (TJ)-55°C to 175°CMaximum junction temperature


  • Logic-level gate drive (can be controlled directly with 5V logic circuits)
  • Low R<sub>DS(on)</sub> (44mΩ) for better efficiency
  • High current handling (36A) for medium- to high-power applications
  • TO-220 package for easy heat dissipation





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