SI4401FDY-T1-GE3
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| Part Number | SI4401FDY-T1-GE3 |
|---|---|
| Manufacturer |
 Vishay
|
| Description | The SI4401FDY-T1-GE3 is a P-channel TrenchFET® Gen III power MOSFET designed for high-efficiency switching and load management applications. It features a drain-source voltage (VDS) of -40V and continuous drain current up to -9.9A (TA) and -14A (TC), with low on-resistance of approximately 11.8 mΩ typical and 14.2 mΩ max at VGS = -10V, ensuring minimal conduction losses. The device supports gate-source voltage up to ±20V and has a threshold voltage range of approximately -1V to -2.3V, allowing logic-level drive compatibility. It offers fast switching performance with total gate charge around 66–100 nC and input capacitance approximately 4000 pF. Maximum power dissipation is about 2.5W (TA) to 5W (TC), and it operates over a wide temperature range from -55°C to +150°C. Packaged in SOIC-8, it is suitable for battery management, DC-DC converters, load switching, and power control circuits. |
| Product Group | Transistor |
| MOQ | 2500 pcs |
| SPQ | 2500 pcs |
| Figure/Case | 8-SOIC |
| Package | T&R Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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SI4401FDY-T1-GE3
SI4401FDY-T1-GE3