Products Transistor IRL1004PBF


IRL1004PBF

IRL1004PBF, Transistor, from Infineon in Stock Hong Kong Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistan

The image is for illustrative purposes only; please refer to the product data sheet for precise specifications.


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Part Number IRL1004PBF
Manufacturer Infineon Official Vector Logo Infineon
Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
Product Group Transistor
MOQ 1000 pcs
SPQ 50 pcs
Figure/Case TO-220-3
Package TUBE Pack
PDF PDF Datasheet
Ship From Hong Kong
Shipment Way DHL / Fedex / TNT / UPS / Others
Delivery Term Ex-Works
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ParameterValueDescription
Part NumberIRL1004PBFLogic-Level N-Channel Power MOSFET
TechnologyMOSFETMetal-Oxide-Semiconductor Field-Effect Transistor
Voltage Rating (VDSS)40VMaximum Drain-Source Voltage
Current Rating (ID)160AContinuous Drain Current
Power Dissipation (PD)230WMaximum Power Dissipation
RDS(on) (Max)2.3mΩMaximum Drain-Source On-Resistance
Gate Threshold Voltage (VGS(th))1.0V - 2.0VLow threshold voltage for logic-level operation
Gate-Source Voltage (VGS)±16VMaximum allowable gate voltage
Total Gate Charge (QG)180nCCharge required to switch MOSFET
Rise Time (tr)35nsSwitching rise time
Fall Time (tf)25nsSwitching fall time
Input Capacitance (Ciss)7100pFCapacitance seen at the gate
Package TypeTO-220Transistor Outline (TO) package
Mounting TypeThrough-HoleDesigned for PCB mounting
Operating Temperature (TJ)-55°C to 175°CMaximum junction temperature


  • Logic-level gate drive (can be driven directly by 5V logic circuits)
  • Ultra-low R<sub>DS(on)</sub> (2.3mΩ) for high efficiency
  • High current capacity (160A) ideal for power applications
  • TO-220 package for effective heat dissipation





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