Products Transistor BCP53,115


BCP53,115


BCP53,115, Transistor, from Nexperia in Stock Hong Kong The BCP53,115 is a general-purpose NPN bipolar junction transistor (BJT) developed by NXP Semiconductors, designed for medium-power switching and ampl

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Part Number BCP53,115
Manufacturer Nexperia Official Vector Logo Nexperia
Description The BCP53,115 is a general-purpose NPN bipolar junction transistor (BJT) developed by NXP Semiconductors, designed for medium-power switching and amplification applications. It offers a robust combination of high current capability and reliable voltage handling, making it suitable for a wide range of electronic circuits.

This transistor supports a collector current of up to 1 A and a collector-emitter voltage rating of 45 V, enabling efficient operation in load-driving and signal amplification tasks. Its low saturation voltage helps minimize power dissipation during switching, while its stable current gain ensures consistent performance across varying conditions.

Packaged in a SOT-223 surface-mount form factor, the BCP53,115 provides good thermal performance and is ideal for automated PCB assembly. Typical applications include power management circuits, driver stages, voltage regulators, and general-purpose switching in consumer electronics and industrial systems.
Product Group Transistor
MOQ 1000 pcs
SPQ 1000 pcs
Figure/Case SOT-223
Package T&R Pack
PDF PDF Datasheet
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FeaturesDescription
Current - Collector (Ic) (Max)1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce63 @ 150mA, 2V
Frequency - Transition145MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
Package / CaseTO-261-4, TO-261AA
Power - Max1 W
QualificationAEC-Q100
Supplier Device PackageSOT-223
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)80 V







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