IRF540NPBF
The image is for illustrative purposes only; please refer to the product data sheet for precise specifications.
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| Part Number | IRF540NPBF |
|---|---|
| Manufacturer |
 Infineon
|
| Description | The IRF540N is an N-channel power MOSFET designed for high-voltage and high-current switching applications. It features a drain-source voltage rating of 100 V and a continuous drain current up to approximately 33 A under proper thermal conditions. The device offers low on-resistance (Rds(on)) typically around 0.044 Ω, enabling efficient power switching with reduced conduction losses. It requires a gate drive voltage of around 10 V for optimal performance and provides fast switching characteristics suitable for switching regulators and power control circuits. The IRF540N is widely used in power supplies, motor control, DC-DC converters, inverters, and industrial switching applications. |
| Product Group | Transistor |
| MOQ | 2000 pcs |
| SPQ | 50 pcs |
| Figure/Case | TO-220-3 |
| Package | TUBE Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
| Feature | Specification |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 33 A (at 25°C) |
| Drain-to-Source On-Resistance (RDS(on)) | 44 mΩ (at ID = 16 A, VGS = 10 V) |
| Gate Charge (Qg) | 71 nC (at VGS = 10 V) |
| Total Power Dissipation (PD) | 130 W (at TC = 25°C) |
| Gate-to-Source Voltage (VGS) | ±20 V |
| Input Capacitance (Ciss) | 1,960 pF (at VDS = 25 V) |
| Operating Junction Temperature (TJ) | -55°C to 175°C |
| Package | TO-220AB |
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IRF540NPBF
IRF540NPBF