MJ11016G
| Part Number | MJ11016G |
|---|---|
| Manufacturer |
 ON Semiconductor
|
| Description | Darlington 120 V 30 A 4MHz 200 W Through Hole TO-204/TO-3, The MJ11016G is suitable for applications requiring high current handling and voltage capabilities, such as audio amplifiers, power supplies, and motor control circuits. Its high DC current gain ensures efficient operation, while the monolithic construction with a built-in base-emitter shunt resistor enhances thermal stability and reliability. The device wide operating temperature range makes it suitable for various industrial and commercial applications. |
| Product Group | Transistor |
| MOQ | 1000 pcs |
| SPQ | 100 pcs |
| Figure/Case | TO3 |
| Package | TRAY Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
| Feature | Specification |
|---|---|
| Type | NPN Darlington Bipolar Power Transistor |
| Collector-Emitter Voltage (V<sub>CE</sub>) | 120V (Minimum) |
| Collector-Base Voltage (V<sub>CB</sub>) | 120V (Maximum) |
| Emitter-Base Voltage (V<sub>EB</sub>) | 5V (Maximum) |
| Collector Current (I<sub>C</sub>) | 30A (Continuous) |
| Collector Dissipation (P<sub>C</sub>) | 200W |
| DC Current Gain (h<sub>FE</sub>) | 1000 (Minimum) at I<sub>C</sub> = 20A |
| Transition Frequency (f<sub>T</sub>) | 4 MHz (Minimum) |
| Operating and Storage Junction Temperature Range | -65°C to +200°C |
| Package Type | TO-3 |
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MJ11016G
MJ11016G