IRFZ24N
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| Part Number | IRFZ24N |
|---|---|
| Manufacturer |
 EVVO Semiconductor
|
| Description | The IRFZ24N is a robust and widely used N-channel power MOSFET developed by Infineon Technologies (formerly International Rectifier), designed for efficient power switching and amplification in a wide range of electronic applications. It is part of the well-known HEXFET power MOSFET family, optimized for low conduction losses and fast switching performance. The device supports a maximum drain-source voltage of 55V and a continuous drain current of up to 17A, making it suitable for medium-power switching applications such as motor control, DC-DC converters, and power supplies. It features a low RDS(on) of approximately 0.07Ω, which helps reduce conduction losses and improve overall efficiency in power circuits. The IRFZ24N offers fast switching characteristics and high avalanche ruggedness, ensuring reliable operation under dynamic load conditions and inductive switching environments. With a gate-source voltage rating of ±20V and a typical threshold voltage around 2V–4V, it can be driven by standard gate driver circuits and is suitable for many logic-level control applications. Housed in a durable TO-220 through-hole package, the device allows efficient heat dissipation and easy mounting with heatsinks, making it ideal for both prototyping and industrial designs. The IRFZ24N is widely used in applications such as motor drivers, switching power supplies, DC-DC converters, LED drivers, battery management systems, and general-purpose power control circuits, where high efficiency and reliability are essential. |
| Product Group | Transistor |
| MOQ | 1000 pcs |
| SPQ | 50 pcs |
| Figure/Case | TO220-3 |
| Package | TUBE Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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IRFZ24N
IRFZ24N