2N7002,215
The image is for illustrative purposes only; please refer to the product data sheet for precise specifications.
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| Part Number | 2N7002,215 |
|---|---|
| Manufacturer |
 Nexperia
|
| Description | The 2N7002,215 is an N-channel enhancement-mode MOSFET designed for low-power switching and amplification applications. It features a drain-source voltage (VDS) of 60V and continuous drain current up to 300 mA, with low on-resistance of approximately 5 Ω at VGS = 10V. The device supports gate-source voltage up to ±20V and has a threshold voltage range of approximately 1V to 3V, enabling logic-level control. It offers fast switching characteristics with low gate charge (~2.5 nC) and low input capacitance (~50 pF), making it suitable for high-speed switching applications. The MOSFET has a total power dissipation of approximately 350 mW and operates over a temperature range of -55°C to +150°C. Packaged in SOT-23, it is ideal for load switching, level shifting, small signal amplification, and general-purpose switching applications in portable and embedded systems. |
| Product Group | Transistor |
| MOQ | pcs |
| SPQ | pcs |
| Figure/Case | |
| Package | Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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2N7002,215
2N7002,215