The image is for illustrative purposes only; please refer to the product data sheet for precise specifications.
| Part Number | IPA80R900P7XKSA1 |
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| Manufacturer |
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| Description | The IPA80R900P7XKSA1 is an N-channel super junction power MOSFET from Infineon’s CoolMOS™ P7 series, designed for high-efficiency switching in offline power supply applications. It features a drain-source voltage (VDS) of 800V and continuous drain current up to 6A, with low on-resistance of approximately 0.75–0.9Ω at VGS = 10V, enabling reduced conduction losses . The device offers low gate charge (~15–17 nC) and low capacitances, resulting in reduced switching losses and improved efficiency in high-frequency operation . It supports gate-source voltage up to ±20V and has a threshold voltage around 3V, ensuring easy drive compatibility . The MOSFET provides power dissipation up to 26–27W and operates over a wide temperature range of -55°C to +150°C . It integrates ESD protection and is optimized for flyback, SMPS, LED drivers, adapters, and industrial power applications, offering improved efficiency and thermal performance compared to previous generations . |
| Product Group | Transistor |
| MOQ | 1000 pcs |
| SPQ | 50 pcs |
| Figure/Case | TO-220-3 |
| Package | TUBE Pack |
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| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
Room 1304, 13/F, Allways Centre, 468 Jaffe Road, Causeway Bay, Hong Kong. |