IRFPG50PBF
| Part Number | IRFPG50PBF |
|---|---|
| Manufacturer |
 Vishay
|
| Description | N-Channel 1000V 6.1A 190W Through Hole TO-247-3, 2Ohm @3.6A 10V Rds On (Max) @ Id, Vgs |
| Product Group | Transistor |
| MOQ | 1000 pcs |
| SPQ | 25 pcs |
| Figure/Case | TO-247-3 |
| Package | TUBE Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
| Parameter | Value | Description |
|---|---|---|
| Part Number | IRFPG50PBF | High-voltage Power MOSFET |
| Technology | MOSFET | Metal-Oxide-Semiconductor Field-Effect Transistor |
| Voltage Rating (VDSS) | 1000V | Maximum Drain-Source Voltage |
| Current Rating (ID) | 5.4A | Continuous Drain Current |
| Power Dissipation (PD) | 190W | Maximum Power Dissipation |
| RDS(on) (Max) | 3Ω | Maximum Drain-Source On-Resistance |
| Gate Threshold Voltage (VGS(th)) | 2.0V - 4.0V | Threshold voltage to turn on |
| Gate-Source Voltage (VGS) | ±20V | Maximum allowable gate voltage |
| Total Gate Charge (QG) | 52nC | Charge required to switch MOSFET |
| Rise Time (tr) | 25ns | Switching rise time |
| Fall Time (tf) | 25ns | Switching fall time |
| Input Capacitance (Ciss) | 1500pF | Capacitance seen at the gate |
| Package Type | TO-247 | Transistor Outline (TO) package |
| Mounting Type | Through-Hole | Designed for PCB mounting |
| Operating Temperature (TJ) | -55°C to 150°C | Maximum junction temperature |
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IRFPG50PBF
IRFPG50PBF