IRF830PBF
The image is for illustrative purposes only; please refer to the product data sheet for precise specifications.
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| Part Number | IRF830PBF |
|---|---|
| Manufacturer |
 Vishay
|
| Description | The IRF830PBF is a robust N-channel power MOSFET developed by Infineon Technologies, designed for high-voltage switching applications and power conversion systems. It features a maximum drain-to-source voltage of 500V, making it suitable for offline and AC-powered designs. This device is optimized for fast switching performance and reliable operation in demanding environments, commonly used in switch-mode power supplies (SMPS), flyback converters, and high-voltage DC-DC converters. The IRF830PBF offers a balanced combination of low gate charge and efficient switching characteristics, helping to reduce switching losses and improve overall system efficiency in power electronics applications. With its rugged design and high avalanche energy capability, the device ensures reliable operation under transient and overload conditions, making it suitable for industrial and consumer power systems. The MOSFET operates with standard gate drive requirements and is compatible with a wide range of control circuits, including PWM controllers and discrete driver stages. Packaged in a durable TO-220AB through-hole form factor, the IRF830PBF provides excellent thermal dissipation and ease of mounting, supporting both prototyping and production environments. The IRF830PBF is widely used in applications such as switch-mode power supplies, LED drivers, AC-DC converters, battery chargers, and industrial power control systems, where high-voltage and reliable switching performance is essential. |
| Product Group | Transistor |
| MOQ | 1000 pcs |
| SPQ | 50 pcs |
| Figure/Case | TO-220-3 |
| Package | TUBE Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
| Feature | Specification |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 500 V |
| Continuous Drain Current (ID) | 4.5 A (at 25°C) |
| Drain-to-Source On-Resistance (RDS(on)) | 1.5 Ω (at ID = 2.7 A, VGS = 10 V) |
| Gate Charge (Qg) | 38 nC (at VGS = 10 V) |
| Total Power Dissipation (PD) | 74 W (at TC = 25°C) |
| Gate-to-Source Voltage (VGS) | ±20 V |
| Input Capacitance (Ciss) | 610 pF (at VDS = 25 V) |
| Operating Junction Temperature (TJ) | -55°C to 150°C |
| Package | TO-220AB |
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IRF830PBF
IRF830PBF