STGW20NC60VD
| Part Number | STGW20NC60VD |
|---|---|
| Manufacturer |
 ST Microelectronics
|
| Description | IGBT 600 V 60 A 200 W Through Hole TO-247-3, The STGW20NC60VD is a very fast Insulated Gate Bipolar Transistor (IGBT) from STMicroelectronics, designed for high-frequency applications. |
| Product Group | Transistor |
| MOQ | 510 pcs |
| SPQ | 30 pcs |
| Figure/Case | TO-247 |
| Package | TUBE Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
| Parameter | Specification |
|---|---|
| Type | N-Channel IGBT |
| Package | TO-247 |
| Collector-Emitter Voltage (Vce) | 600 V |
| Collector Current (Ic) | 30 A |
| Power Dissipation (Ptot) | 200 W |
| Collector-Emitter Saturation Voltage (Vcesat) | 1.7 V (at Ic = 20 A) |
| Gate-Emitter Threshold Voltage (Vge(th)) | 4.0 V (typical) |
| Gate-Emitter Leakage Current (Ige) | 100 nA (at Vge = 5 V) |
| Operating Junction Temperature (Tj) | -55°C to 150°C |
| Package Type | TO-247 |
| RoHS Compliance | Ecopack2 |
| Features | - High current capability |
| - Very soft ultra-fast recovery antiparallel diode | |
| - High-frequency operation up to 50 kHz | |
| - Advanced PowerMESH™ process for excellent trade-off between switching performance and low on-state behavior |
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STGW20NC60VD
STGW20NC60VD