PSMN4R1-60YLX
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| Part Number | PSMN4R1-60YLX |
|---|---|
| Manufacturer |
 Nexperia
|
| Description | The PSMN4R1-60YLX is a high-performance N-channel MOSFET from Nexperia, engineered for efficient power switching in applications such as power supplies, motor control, and USB-PD systems. It features a maximum drain-source voltage (VDS) of 60 V and a low on-state resistance (RDS(on)) of 4.8 mΩ at VGS = 5 V and 3.3 mΩ at VGS = 10 V, minimizing conduction losses. The device supports continuous drain current up to 100 A at a mounting base temperature of 25°C and can handle pulsed currents up to 593 A. Its total gate charge is 103 nC, with a gate-drain charge of 18.1 nC, facilitating fast switching operations. The MOSFET is housed in a compact LFPAK56 (Power-SO8) package, offering a maximum power dissipation of 238 W, and operates within a junction temperature range of -55°C to 175°C. Additionally, it is avalanche-rated and 100% tested, ensuring reliability in demanding applications . |
| Product Group | Transistor |
| MOQ | 1500 pcs |
| SPQ | 1500 pcs |
| Figure/Case | LFPAK56 |
| Package | T&R Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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PSMN4R1-60YLX
PSMN4R1-60YLX