BSS84-7-F
The image is for illustrative purposes only; please refer to the product data sheet for precise specifications.
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| Part Number | BSS84-7-F |
|---|---|
| Manufacturer |
 Diodes Incorporated
|
| Description | The BSS84-7-F is a P-channel enhancement-mode MOSFET manufactured by Diodes Incorporated, optimized for low-voltage, high-speed switching applications. It features a drain-source voltage rating of 50V and a continuous drain current of 130mA at a case temperature of 25°C. The MOSFET offers a maximum on-resistance (Rds(on)) of 10 ohms at a gate-source voltage (Vgs) of 5V and a drain current of 100mA. With a gate threshold voltage (Vgs(th)) of up to 2V at 1mA, it ensures reliable switching performance. The device operates efficiently within a junction temperature range of -55°C to 150°C, making it suitable for various applications requiring compact and efficient switching solutions. |
| Product Group | Transistor |
| MOQ | 3000 pcs |
| SPQ | 3000 pcs |
| Figure/Case | SOT-23-3 |
| Package | T&R Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
| Feature | Specification |
|---|---|
| Type | P-Channel MOSFET |
| Drain-Source Voltage (Vds) | 50V |
| Continuous Drain Current (Id) | 130mA at Ta = 25°C |
| Gate-Source Threshold Voltage (Vgs(th)) | Up to 2V at 1mA |
| On-Resistance (Rds(on)) | 10 ohms at Id = 100mA, Vgs = 5V |
| Gate-Source Voltage (Vgs) | ±20V |
| Input Capacitance (Ciss) | 45pF at Vds = 25V |
| Power Dissipation (Pd) | 300mW at Ta = 25°C |
| Operating Temperature Range | -55°C to 150°C (TJ) |
| Package Type | SOT-23-3 (Surface Mount) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Manufacturer | Diodes Incorporated |
| Product Code | BSS84-7-F |
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BSS84-7-F
BSS84-7-F