Part Number | TK39A60W,S4VX(M |
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Manufacturer |
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Description | The TK39A60W,S4VX is an N-channel MOSFET developed by Toshiba, suitable for high-voltage switching applications. N-Channel 600 V 38.8A (Ta) 50W (Tc) Through Hole TO-220SIS. |
Product Group | Transistor |
MOQ | 2000 pcs |
SPQ | 50 pcs |
Figure/Case | TO-220-3 |
Package | TUBE Pack |
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Ship From | Hong Kong |
Shipment Way | DHL / Fedex / TNT / UPS / Others |
Delivery Term | Ex-Works |
Send RFQ | sales@signalhk.com |
Feature | Description |
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Transistor Type | N-Channel MOSFET |
Drain-Source Voltage (VDS) | 600 V |
Continuous Drain Current (ID) | 38.8 A (at 25°C) |
RDS(on) (Max) @ VGS) | 65 mOhm @ 10 V |
Gate Charge (Qg) | 110 nC @ 10 V |
Input Capacitance (Ciss) | 4100 pF @ 300 V |
Power Dissipation (PD) | 50 W (at case temperature) |
Package Type | TO-220-3 Full Pack |
Mounting Type | Through Hole |
Series | DTMOSIV |
Applications | "- High-voltage switching |
- power supplies | |
- Motor drives" |
Room 1304, 13/F, Allways Centre, 468 Jaffe Road, Causeway Bay, Hong Kong. |