Products Transistor 2SC5200-O(Q)


2SC5200-O(Q)


Part Number 2SC5200-O(Q)
Manufacturer Toshiba Official Vector Logo Toshiba
Description The 2SC5200-O(Q) is an NPN bipolar junction transistor (BJT) manufactured by Toshiba, commonly used in high-power amplifier applications. Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)
Product Group Transistor
MOQ 1000 pcs
SPQ 100 pcs
Figure/Case TO-3P
Package TUBE Pack
PDF PDF Datasheet
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Delivery Term Ex-Works
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FeatureSpecification
Transistor TypeNPN
Collector-Emitter Voltage (VCEO)230 V
Collector-Base Voltage (VCBO)230 V
Emitter-Base Voltage (VEBO)5 V
Collector Current (IC)15 A
Power Dissipation (PD)150 W
Transition Frequency (fT)30 MHz
DC Current Gain (hFE)80 (minimum) at IC = 1 A, VCE = 5 V
Collector-Emitter Saturation Voltage (VCE(sat))3 V (maximum) at IC = 8 A, IB = 800 mA
Package / CaseTO-3P(L)
Mounting TypeThrough Hole
Operating Temperature (TJ)-55°C to 150°C







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