2SC5200-O(Q)
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| Part Number | 2SC5200-O(Q) |
|---|---|
| Manufacturer |
 Toshiba
|
| Description | The 2SC5200 is a high-power silicon NPN bipolar junction transistor (BJT) from Toshiba, specifically designed for power amplifier applications. Its high collector voltage, high current capability, substantial power dissipation rating, and suitable frequency response make it particularly well suited for output stages in high-fidelity audio power amplifiers. The 2SC5200 provides a maximum collector-emitter voltage (VCEO) of 230V and a maximum collector-base voltage (VCBO) of 230V. The high breakdown voltage allows the transistor to operate in amplifier circuits using relatively high supply rails and provides useful voltage margin for demanding linear power applications. The device supports a maximum continuous collector current (IC) of 15A and a maximum base current of 1.5A. This high current capability makes the 2SC5200 suitable for driving low-impedance loads and delivering substantial output power when used with an appropriately designed heatsink, bias circuit, power supply, and complementary output stage. Maximum collector power dissipation (PC) is 150W when the case temperature is maintained at 25°C. Proper thermal design and heatsinking are therefore essential when the transistor is operated at significant power levels, particularly in Class AB and other linear amplifier output stages. The DC current gain hFE is specified from 55 to 160 at IC = 1A and VCE = 5V. Toshiba specifies gain ranking for the device, allowing designers to consider transistor gain characteristics when selecting or matching devices for high-performance amplifier output stages. The 2SC5200 provides a typical transition frequency (fT) of 30MHz at IC = 1A and VCE = 5V. This frequency performance is well suited to audio-frequency amplification and supports the bandwidth requirements of high-fidelity power amplifier designs. Maximum collector-emitter saturation voltage VCE(sat) is specified at 3.0V with IC = 8A and IB = 0.8A. The transistor is optimized primarily for linear power-amplifier operation rather than low-voltage saturated switching applications. The 2SC5200 uses a silicon NPN triple-diffused structure designed for high-power operation. This construction provides the voltage and current capability required for discrete audio amplifier output stages and other linear power circuits. Toshiba specifies the 2SA1943 PNP power transistor as the complementary device for the 2SC5200. The 2SC5200 and 2SA1943 combination is commonly used to form complementary push-pull output stages in Class AB audio power amplifiers, where NPN and PNP devices handle opposite halves of the output waveform. The device is specifically recommended for approximately 100W high-fidelity audio amplifier output stages. Multiple complementary transistor pairs may also be used in parallel in appropriately engineered amplifier designs requiring greater current capability and output power, provided that current sharing, biasing, thermal tracking, and safe operating area requirements are correctly addressed. The 2SC5200 is supplied in Toshibas TO-3P(L) 3-pin through-hole power package, measuring approximately 20.0 × 26.0 × 5.0mm. The package provides a large mounting surface for efficient thermal coupling to an external heatsink, which is essential for high-power linear operation. The device pin configuration is Pin 1 Base, Pin 2 Collector, and Pin 3 Emitter, with the heatsink mounting section electrically connected to the collector. Appropriate electrical insulation should therefore be used when mounting the transistor to a common or grounded heatsink where electrical isolation is required. The maximum junction temperature is 150°C, while the specified storage temperature range extends from -55°C to +150°C. Reliable high-power operation requires suitable thermal derating so that junction temperature remains within the specified limits under worst-case operating conditions. The combination of 230V collector-emitter capability, 15A collector current, 150W power dissipation, 30MHz typical transition frequency, and complementary operation with the 2SA1943 makes the 2SC5200 a widely recognized discrete power transistor for high-performance analog output stages. The 2SC5200 is widely used in Hi-Fi audio power amplifiers, professional audio amplifiers, PA systems, stereo amplifiers, home audio equipment, active speaker systems, subwoofer amplifiers, Class AB amplifier output stages, discrete linear amplifiers, audio power modules, and other high-power analog amplification circuits. |
| Product Group | Transistor |
| MOQ | 960 pcs |
| SPQ | 30 pcs |
| Figure/Case | TO-3P |
| Package | TUBE Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
| Feature | Specification |
|---|---|
| Transistor Type | NPN |
| Collector-Emitter Voltage (VCEO) | 230 V |
| Collector-Base Voltage (VCBO) | 230 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 15 A |
| Power Dissipation (PD) | 150 W |
| Transition Frequency (fT) | 30 MHz |
| DC Current Gain (hFE) | 80 (minimum) at IC = 1 A, VCE = 5 V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 3 V (maximum) at IC = 8 A, IB = 800 mA |
| Package / Case | TO-3P(L) |
| Mounting Type | Through Hole |
| Operating Temperature (TJ) | -55°C to 150°C |
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2SC5200-O(Q)
2SC5200-O(Q)
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