Products Transistor MMBT2222AT-7-F


MMBT2222AT-7-F


Part Number MMBT2222AT-7-F
Manufacturer Diodes Incorporated Official Vector Logo Diodes Incorporated
Description The MMBT2222AT-7-F is a general-purpose NPN bipolar junction transistor (BJT) designed for low-power amplification and switching applications. Bipolar (BJT) Transistor NPN 40 V 600 mA 300MHz 150 mW Surface Mount SOT-523
Product Group Transistor
MOQ 3000 pcs
SPQ 3000 pcs
Figure/Case SOT-523
Package T&R Pack
PDF PDF Datasheet
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FeatureDescription
Transistor TypeNPN
Maximum Collector-Emitter Voltage (VCEO)40 V
Maximum Collector Current (IC)600 mA
Power Dissipation (PD)150 mW
DC Current Gain (hFE)100 (minimum) at IC = 150 mA, VCE = 10 V
Transition Frequency (fT)300 MHz
Collector-Emitter Saturation Voltage (VCE(sat))1 V (maximum) at IB = 50 mA, IC = 500 mA
Collector Cutoff Current (ICBO)10 nA (maximum)
Package / CaseSOT-523
Mounting TypeSurface Mount
Operating Temperature Range-55°C to 150°C (TJ)
QualificationAEC-Q101 (Automotive)







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