| Part Number | 2SA1943-O(Q) |
|---|---|
| Manufacturer |
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| Description | The 2SA1943-O(Q) is a PNP bipolar junction transistor (BJT) manufactured by Toshiba, commonly used in high-power amplifier applications. Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L), |
| Product Group | Transistor |
| MOQ | 1000 pcs |
| SPQ | 100 pcs |
| Figure/Case | TO-3P |
| Package | TUBE Pack |
| | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
| Feature | Specification |
|---|---|
| Transistor Type | PNP |
| Collector-Emitter Voltage (VCEO) | -230 V |
| Collector-Base Voltage (VCBO) | -230 V |
| Emitter-Base Voltage (VEBO) | -5 V |
| Collector Current (IC) | -15 A |
| Power Dissipation (PD) | 150 W |
| DC Current Gain (hFE) | 55 (minimum) |
| Transition Frequency (fT) | 30 MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)) | -1.5 V (typical) at IC = -8 A, IB = -0.8 A |
| Package / Case | TO-3PL |
| Mounting Type | Through Hole |
| Dimensions | 20.5 mm (Length) x 5.2 mm (Width) x 26 mm (Height) |
| Operating Temperature Range | Up to 150°C |
Room 1304, 13/F, Allways Centre, 468 Jaffe Road, Causeway Bay, Hong Kong. |