Products Transistor 2SA1943-O(Q)



2SA1943-O(Q)

2SA1943-O(Q), Transistor, from Toshiba in Stock Hong Kong The 2SA1943-O(Q) is a PNP bipolar junction transistor (BJT) manufactured by Toshiba, commonly used in high-power amplifier applications. Bipolar (BJT GET QUOTE NOW!

Part Number 2SA1943-O(Q)
Manufacturer Toshiba Official Vector Logo Toshiba
Description The 2SA1943-O(Q) is a PNP bipolar junction transistor (BJT) manufactured by Toshiba, commonly used in high-power amplifier applications. Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L),
Product Group Transistor
MOQ 1000 pcs
SPQ 100 pcs
Figure/Case TO-3P
Package TUBE Pack
PDF PDF Datasheet
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Delivery Term Ex-Works
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FeatureSpecification
Transistor TypePNP
Collector-Emitter Voltage (VCEO)-230 V
Collector-Base Voltage (VCBO)-230 V
Emitter-Base Voltage (VEBO)-5 V
Collector Current (IC)-15 A
Power Dissipation (PD)150 W
DC Current Gain (hFE)55 (minimum)
Transition Frequency (fT)30 MHz
Collector-Emitter Saturation Voltage (VCE(sat))-1.5 V (typical) at IC = -8 A, IB = -0.8 A
Package / CaseTO-3PL
Mounting TypeThrough Hole
Dimensions20.5 mm (Length) x 5.2 mm (Width) x 26 mm (Height)
Operating Temperature RangeUp to 150°C





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