Part Number | 2SA1943-O(Q) |
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Manufacturer |
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Description | The 2SA1943-O(Q) is a PNP bipolar junction transistor (BJT) manufactured by Toshiba, commonly used in high-power amplifier applications. Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L), |
Product Group | Transistor |
MOQ | 1000 pcs |
SPQ | 100 pcs |
Figure/Case | TO-3P |
Package | TUBE Pack |
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Ship From | Hong Kong |
Shipment Way | DHL / Fedex / TNT / UPS / Others |
Delivery Term | Ex-Works |
Send RFQ | sales@signalhk.com |
Feature | Specification |
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Transistor Type | PNP |
Collector-Emitter Voltage (VCEO) | -230 V |
Collector-Base Voltage (VCBO) | -230 V |
Emitter-Base Voltage (VEBO) | -5 V |
Collector Current (IC) | -15 A |
Power Dissipation (PD) | 150 W |
DC Current Gain (hFE) | 55 (minimum) |
Transition Frequency (fT) | 30 MHz |
Collector-Emitter Saturation Voltage (VCE(sat)) | -1.5 V (typical) at IC = -8 A, IB = -0.8 A |
Package / Case | TO-3PL |
Mounting Type | Through Hole |
Dimensions | 20.5 mm (Length) x 5.2 mm (Width) x 26 mm (Height) |
Operating Temperature Range | Up to 150°C |
Room 1304, 13/F, Allways Centre, 468 Jaffe Road, Causeway Bay, Hong Kong. |