2SA1943-O(Q)
The image is for illustrative purposes only; please refer to the product data sheet for precise specifications.
GET QUOTE NOW!
| Part Number | 2SA1943-O(Q) |
|---|---|
| Manufacturer |
 Toshiba
|
| Description | The 2SA1943 is a high-power silicon PNP bipolar junction transistor (BJT) from Toshiba, specifically designed for high-fidelity power amplifier applications. Its high collector voltage, high current capability, substantial power dissipation rating, and suitable frequency response make it particularly well suited for complementary output stages in high-power audio amplifiers. The 2SA1943 provides a maximum collector-emitter voltage (VCEO) of -230V and a maximum collector-base voltage (VCBO) of -230V. This high breakdown-voltage capability allows the transistor to operate with relatively high amplifier supply rails while providing useful voltage margin for demanding linear power applications. The device supports a maximum continuous collector current (IC) of -15A and a maximum base current of -1.5A. This high current capability makes the 2SA1943 suitable for driving low-impedance loads and delivering substantial output power when used with an appropriate heatsink, power supply, bias network, and complementary output stage. Maximum collector power dissipation (PC) is 150W when the case temperature is maintained at 25°C. Effective thermal management and an appropriately sized heatsink are essential when the transistor operates at significant power levels, especially in Class AB linear amplifier output stages. The DC current gain hFE is specified from 55 to 160 at VCE = -5V and IC = -1A. Gain classification enables designers to consider device matching and current-sharing requirements when implementing complementary or parallel transistor output stages. The 2SA1943 provides a typical transition frequency (fT) of 30MHz. This frequency performance is well suited to audio-frequency amplification and provides sufficient bandwidth for high-fidelity discrete power amplifier designs. The maximum collector-emitter saturation voltage VCE(sat) is specified at approximately -3.0V with IC = -8A and IB = -0.8A. The device is optimized primarily for high-power linear amplifier operation rather than low-voltage saturated switching applications. The 2SA1943 uses a silicon PNP triple-diffused structure designed for high-voltage and high-current power operation. This construction provides the electrical characteristics required for discrete audio amplifier output stages and other high-power linear circuits. Toshiba specifies the 2SC5200 NPN power transistor as the complementary device for the 2SA1943. The 2SA1943 and 2SC5200 combination is widely used to create complementary push-pull output stages in Class AB audio amplifiers, with the PNP and NPN devices handling opposite portions of the output waveform. The device is particularly suitable for approximately 100W high-fidelity audio amplifier output stages. Multiple complementary transistor pairs can also be connected in parallel in appropriately engineered higher-power amplifier designs, provided that current sharing, emitter resistance, biasing, thermal tracking, heatsinking, and safe operating area requirements are correctly addressed. The 2SA1943 is supplied in Toshibas TO-3P(L) 3-pin through-hole power package, measuring approximately 20.0 × 26.0 × 5.0mm. The package provides a large mounting area for effective thermal coupling to an external heatsink, which is essential for reliable high-power linear operation. The device pin configuration is Pin 1 Base, Pin 2 Collector, and Pin 3 Emitter. The package mounting section is electrically associated with the collector, so suitable electrical insulation should be used when the transistor is attached to a grounded or shared heatsink where collector isolation is required. The maximum junction temperature is 150°C, and the storage temperature range extends from approximately -55°C to +150°C. Proper thermal derating is necessary to maintain the semiconductor junction within its safe operating temperature under worst-case load, supply, and ambient conditions. The combination of -230V collector-emitter capability, -15A collector current, 150W power dissipation, 30MHz typical transition frequency, and complementary operation with the 2SC5200 makes the 2SA1943 a widely used PNP power transistor for high-performance discrete analog output stages. The 2SA1943 is widely used in Hi-Fi audio power amplifiers, professional audio amplifiers, PA systems, stereo amplifiers, home audio equipment, active loudspeakers, subwoofer amplifiers, Class AB amplifier output stages, complementary push-pull amplifiers, discrete linear amplifiers, audio power modules, and other high-power analog amplification circuits. |
| Product Group | Transistor |
| MOQ | 960 pcs |
| SPQ | 30 pcs |
| Figure/Case | TO-3P |
| Package | TUBE Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
| Feature | Specification |
|---|---|
| Transistor Type | PNP |
| Collector-Emitter Voltage (VCEO) | -230 V |
| Collector-Base Voltage (VCBO) | -230 V |
| Emitter-Base Voltage (VEBO) | -5 V |
| Collector Current (IC) | -15 A |
| Power Dissipation (PD) | 150 W |
| DC Current Gain (hFE) | 55 (minimum) |
| Transition Frequency (fT) | 30 MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)) | -1.5 V (typical) at IC = -8 A, IB = -0.8 A |
| Package / Case | TO-3PL |
| Mounting Type | Through Hole |
| Dimensions | 20.5 mm (Length) x 5.2 mm (Width) x 26 mm (Height) |
| Operating Temperature Range | Up to 150°C |
Request quotation for
2SA1943-O(Q)
2SA1943-O(Q)
RECOMMENDED PART(S) for 2SA1943-O(Q)
2SC5200-O(Q)
The 2SC5200 is a high-power silicon NPN bipolar junction transistor (BJT) from Toshiba, specifically designed for power amplifier ...