Products Transistor BSS123-7-F


BSS123-7-F

BSS123-7-F, Transistor, from Diodes Incorporated in Stock Hong Kong The BSS123-7-F is an N-channel enhancement-mode MOSFET manufactured by Diodes Incorporated, designed for low-voltage, high-speed switching application GET QUOTE NOW!

Part Number BSS123-7-F
Manufacturer Diodes Incorporated Official Vector Logo Diodes Incorporated
Description The BSS123-7-F is an N-channel enhancement-mode MOSFET manufactured by Diodes Incorporated, designed for low-voltage, high-speed switching applications. It features a drain-source voltage rating of 100V and a continuous drain current of 170mA at a case temperature of 25°C. The MOSFET offers a maximum on-resistance (Rds(on)) of 6 ohms at a gate-source voltage (Vgs) of 10V and a drain current of 170mA. With a gate threshold voltage (Vgs(th)) of up to 2V at 1mA, it ensures reliable switching performance. The device operates efficiently within a junction temperature range of -55°C to 150°C, making it suitable for various applications requiring compact and efficient switching solutions.
Product Group Transistor
MOQ 3000 pcs
SPQ 3000 pcs
Figure/Case SOT23-3
Package T&R Pack
PDF PDF Datasheet
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Delivery Term Ex-Works
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BSS123-7-F datasheet, BSS123-7-F specifications, BSS123-7-F features, BSS123-7-F pinout, BSS123-7-F Arduino, BSS123-7-F price, BSS123-7-F circuit diagram, BSS123-7-F development board, BSS123-7-F app BSS123-7-F Application BSS123-7-F Stock Quote BSS123-7-F Best Price BSS123-7-F Free Stock BSS123-7-F Lead Time BSS123-7-F Delivery Time BSS123-7-F Stock , The BSS123-7-F is an N-channel enhancement-mode MOSFET manufactured by Diodes Incorporated, designed for low-voltage, high-speed switching applications. It features a drain-source voltage rating of 100V and a continuous drain current of 170mA at a case te