| Product Type | NPN Transistor (BJT) |
| Part Number | MMBT3904-E |
| Manufacturer | onsemi |
| Transistor Type | NPN |
| Maximum Collector-Emitter Voltage (V_CEO) | 40 V (maximum voltage between collector and emitter) |
| Maximum Collector-Base Voltage (V_CBO) | 60 V (maximum voltage between collector and base) |
| Maximum Emitter-Base Voltage (V_EBO) | 6 V (maximum voltage between emitter and base) |
| Maximum Collector Current (I_C) | 200 mA (maximum continuous current through the collector) |
| Power Dissipation (P_D) | 500 mW (maximum power dissipation) |
| DC Current Gain (h_FE) | 100 to 300 (at I_C = 10 mA, V_CE = 10 V) |
| Saturation Voltage (V_CE(sat)) | 0.3 V (maximum saturation voltage between collector and emitter when the transistor is saturated) |
| Transition Frequency (f_T) | 250 MHz (transition frequency, the frequency at which current gain is reduced to 1) |
| Package Type | SOT-23 |
| Dimensions (L x W x H) | 2.9 mm x 1.3 mm x 1.3 mm |
| Weight | 0.03 g |
| Typical Applications | General-purpose amplification, Switching circuits, Signal processing, Low-noise amplification |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55°C to +150°C |
| Storage Temperature Range | -55°C to +150°C |
| Reverse Current (I_R) | 0.1 µA (maximum reverse current at V_CE = 40V) |
| Capacitance (C_BE) | 10 pF (maximum base-emitter capacitance at V_CE = 10 V, f = 1 MHz) |
| Compliance | RoHS Compliant |
ON Semiconductor