IRLML6402TRPBF
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| Part Number | IRLML6402TRPBF |
|---|---|
| Manufacturer |
 Infineon
|
| Description | The IRLML6402TRPBF is a compact P-channel enhancement-mode MOSFET developed by Infineon Technologies, designed for efficient power switching in low-voltage applications. It features a drain-to-source voltage of -20V and supports continuous drain currents up to -3.7A, making it suitable for load switching and power management circuits. The device offers a very low on-resistance of approximately 65mΩ, significantly reducing conduction losses and improving efficiency in battery-powered and portable designs. With a low gate threshold voltage (around -0.4V to -1.2V), the MOSFET supports logic-level gate drive, allowing direct control from microcontrollers and low-voltage logic circuits. The IRLML6402TRPBF features fast switching characteristics and low gate charge (~8nC), enabling efficient operation in high-frequency switching applications such as DC-DC converters. Designed for reliability, it supports a maximum junction temperature of +150°C and provides robust thermal performance with a power dissipation of approximately 1.3W. Encased in a compact SOT-23 surface-mount package, the device is ideal for space-constrained PCB layouts and high-density electronic designs. The IRLML6402TRPBF is widely used in battery management systems, load switching circuits, DC-DC converters, portable electronics, and power control applications, where low losses and compact size are essential. |
| Product Group | Transistor |
| MOQ | 3000 pcs |
| SPQ | 3000 pcs |
| Figure/Case | SOT-23-3 |
| Package | T&R Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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IRLML6402TRPBF
IRLML6402TRPBF